JPS6036398A - Apparatus for growing single crystal - Google Patents

Apparatus for growing single crystal

Info

Publication number
JPS6036398A
JPS6036398A JP14415083A JP14415083A JPS6036398A JP S6036398 A JPS6036398 A JP S6036398A JP 14415083 A JP14415083 A JP 14415083A JP 14415083 A JP14415083 A JP 14415083A JP S6036398 A JPS6036398 A JP S6036398A
Authority
JP
Japan
Prior art keywords
single crystal
sealing material
container
liquid
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14415083A
Other languages
Japanese (ja)
Inventor
Toshihiro Kotani
敏弘 小谷
Koji Tada
多田　紘二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP14415083A priority Critical patent/JPS6036398A/en
Priority to EP84304106A priority patent/EP0138292B1/en
Priority to DE8484304106T priority patent/DE3466785D1/en
Priority to US06/625,537 priority patent/US4873062A/en
Publication of JPS6036398A publication Critical patent/JPS6036398A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To keep the hermetically sealed state of a sealed vessel for the growth of a single crystal by Czochralski process, without fail, by providing a liquid sealing part with a sealant replenishing device to replenish the sealing material. CONSTITUTION:The objective single crystal growing apparatus is furnished with the liquid sealing parts 6, 7 at the axis and/or the openings of the vessel 1, wherein the sealing material-replenishing device 9 is attached to the liquid sealing parts 6, 7. The vessel 1 contains the single crystal growing part, and a single crystal is grown by Czochralski process. The apparatus 9 contains a replenishing vessel 10 made of molybdenum, pyrolytic boron nitride or boron nitride, and molten B2O3 liquid is used as the liquid sealing material 8.

Description

【発明の詳細な説明】 （技術分野） 本発明は、構成元素（以下、揮発性構成元素と称す）が
高い分解圧を有する化合物単結晶をチョクラルスキー法
（以下、ＣＺ法と称す）により育成する装置に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention provides a method for preparing a single crystal of a compound whose constituent elements (hereinafter referred to as volatile constituent elements) have a high decomposition pressure by the Czochralski method (hereinafter referred to as the CZ method). This relates to a device for growing.

（背景技術） 単結晶のＣＺ法による成長方法の一つとして、液体シー
ル材（例、Ｂ２Ｏ３融液）をシール材として用いるホッ
トウォール法がある。(Background Art) One of the methods for growing single crystals using the CZ method is the hot wall method, which uses a liquid sealant (eg, B2O3 melt) as a sealant.

この方法は第１図に例を示すような構造を持った容器１
内に揮発性構成元素Ｃ例、Ａｓ等）Ｘ気を満たし、その
容器１内で引上げを実施する。This method uses a container 1 with a structure as shown in Figure 1.
The container 1 is filled with volatile constituent elements (e.g., As, etc.), and pulling is carried out in the container 1.

図において、容器１の内部には、原料融液２をは種結晶
５が取付けられている。容器１は側壁の部分で上、下に
分割され、その開口部および引上軸部にシール部６およ
び７が設けられ、液体シール材（例、Ｂ２Ｏ３融液）８
でシールされている。そして種結晶５を原料融液２の表
面に浸潰し、なじませた後、種結晶５を回転させながら
単結晶を引上げる。In the figure, a seed crystal 5 is attached inside a container 1 to feed a raw material melt 2. As shown in FIG. The container 1 is divided into an upper portion and a lower portion at the side wall portion, and seal portions 6 and 7 are provided at the opening and the pulling shaft portion, and a liquid sealing material (e.g., B2O3 melt) 8 is provided.
It is sealed with. After the seed crystal 5 is immersed into the surface of the raw material melt 2 and blended, the single crystal is pulled up while rotating the seed crystal 5.

このような単結晶引上げにおいて、容器ＩＯ円内外圧力
に差が生じ、バランスが崩れた場合、液体シール材８の
液面が変動する。特に極端な場合、液体シール材そのも
のがシール部６．７よりこぼれ落ち、不足すると密閉性
が破れ、シールが不完全になる。即ち、引上げ前にチャ
ージしたシール材８がシール部６．７よりこぼれ落ち、
密閉性が破れると揮発性構成元素（例、Ａｓ）が散逸し
、引上げが不可能となる。そして再度、結晶の原料、シ
ール材の原料のチャージが必要になる。In such single crystal pulling, if a difference occurs between the pressure inside and outside the container IO circle and the balance is lost, the liquid level of the liquid sealing material 8 will fluctuate. In particularly extreme cases, the liquid sealing material itself spills out from the sealing portion 6.7, and if insufficient, the sealing property is broken and the sealing becomes incomplete. That is, the charged sealing material 8 falls out from the sealing part 6.7 before being pulled up,
If the seal is broken, volatile constituent elements (eg, As) will dissipate, making it impossible to pull up. Then, it is necessary to charge the raw materials for the crystal and the sealing material again.

（発明の開示） 本発明は、上述の問題点を解決するため成さ、れだもの
で、容器内外の圧力バランスのずれ等により液体シール
材がこぼれ落ちても、任意に液体シール材を補充し、密
閉性を維持すると共に、シール用液体収納部分を必要最
小限にし、容器をコンパクト化し得る単結晶育成装置を
提本発明は、容器内に単結晶育成部が収容され、該賽器
の軸部および／又は開口部が液体シール材によりシール
された、チョクラルスキー法による単結晶育成装置にお
いて、液体シール部に前記液体シール材を補充するシー
ル材補充装置を設けたことを特徴とする単結晶育成装置
である。(Disclosure of the Invention) The present invention was made in order to solve the above-mentioned problems, and even if the liquid sealing material spills due to a pressure imbalance inside and outside the container, it can be refilled at will. The present invention provides a single crystal growth device that maintains airtightness, minimizes the sealing liquid storage portion, and makes the container compact. A single crystal growth apparatus using the Czochralski method, in which a portion and/or an opening are sealed with a liquid sealant, characterized in that the liquid seal portion is provided with a sealing material replenishing device for replenishing the liquid sealing material. This is a crystal growth device.

不発明により育成される単結晶は、揮発性構成元素を有
する化合物、例えば周期律表の■−Ｖ族化合物（例、Ｇ
ａＡｓ　、　ＧａＰ　、　ＩｎＡｓ　、　ＩｎＰ等）、
Ｉ’１ｌ−ＶＩ族化合物（例、ＺｕＳ　、　Ｚｎ５ｅ　
、　ＣｄＳ等）がどの化合物よ構成る単結晶である。The single crystal grown by the non-inventive method is a compound having a volatile constituent element, such as a group ■-V compound of the periodic table (e.g., G
aAs, GaP, InAs, InP, etc.),
I'1l-VI group compounds (e.g., ZuS, Zn5e
, CdS, etc.) is a single crystal composed of any compound.

以下、本発明を図面を用いて実施例により説明する。第
２図は本発明装置の実施例を示す縦断面図である。図に
おいて第１図と同一の符号はそれぞれ同一の部分を示す
。第２図において第１図と異なる点は、シール部６．７
に液体ン）Ｖ拐（例、−Ｂ２０３融液）を補充するだめ
のシール材補充装置９を設けた点である。装置の他の構
造は第１図に示す装置と全く同様である。ただし本発明
は第２図に示す構造に限定されるものではなく、液体シ
ール部を有し、ホットウォール法に用いられる単結晶育
成装置であれば、いずれに適用しても良い。Hereinafter, the present invention will be explained by examples using the drawings. FIG. 2 is a longitudinal sectional view showing an embodiment of the device of the present invention. In the figure, the same reference numerals as in FIG. 1 indicate the same parts. The difference in Fig. 2 from Fig. 1 is that the seal portion 6.7
The point is that a sealing material replenishing device 9 is provided for replenishing liquid (e.g. -B203 melt). The rest of the structure of the device is exactly the same as that shown in FIG. However, the present invention is not limited to the structure shown in FIG. 2, and may be applied to any single crystal growth apparatus that has a liquid seal portion and is used in the hot wall method.

シール材補充装置９は、例えば第２図に示すように、一
端に管１１の付いた補充容器１００周りじヒーター線１
２を巻き付けたものが用いられる。For example, as shown in FIG. 2, the sealing material replenishing device 9 includes a heater wire 1 around a replenishing container 100 having a tube 11 at one end.
2 is used.

そして補充容器１０には予め液体シール材厚料（例、Ｂ
２０３）をチャージして置き、シール部６又は７の液体
シール材８に不足を生じた場合、ヒーター線１２に通電
してシール材料（例、Ｂ２０３）を融解させ、一端の管
１１よシシール部６又は７に液体シール材を補充する。The replenishment container 10 is filled with a thick liquid sealing material (for example, B
203) and if there is a shortage of liquid sealing material 8 in the sealing part 6 or 7, the heater wire 12 is energized to melt the sealing material (e.g. B203) and the sealing part is removed from the tube 11 at one end. Replenish liquid sealant in step 6 or 7.

この場合、シール部６．７内の液体シール材８の確認は
、石英ロッドを用いたのぞき窓又は電気容量もしくは電
気抵抗の変化を用いた電気的検出法などによ９行なう。In this case, confirmation of the liquid sealing material 8 within the sealing portion 6.7 is carried out using a peephole using a quartz rod or an electrical detection method using a change in capacitance or electrical resistance.

又液体シーフレオシ８として８２０８融液を用いる場合
、補充容器１０の材料は、モリブデン、パイロリチック
ボロンナイトライド（ＰＢＮ）、ボロンナイトライド等
が好ましく、これにより再使用が可能になる。In addition, when the 8208 melt is used as the liquid sealant 8, the material of the replenishment container 10 is preferably molybdenum, pyrolytic boron nitride (PBN), boron nitride, etc., which enables reuse.

なお、シール材補充容器１０け各シール部６．７に１個
宛設けても、又２個のシール部６．７に対して１個設け
ても良い。又シール材補充容器を外部チャンバーの外側
に設け、シー）Ｖ月投入のだめのシャッターを設けても
よい。Incidentally, one sealing material replenishment container may be provided for each of the ten sealing portions 6.7, or one may be provided for each of the two sealing portions 6.7. Also, a sealing material replenishment container may be provided outside the external chamber, and a shutter may be provided for loading the container.

このような、シール材補充装置９を設けると、単結晶引
上げ中、容器１の内外の圧力バランスのずれ等によシシ
ール部６．７の液体シール材８がこぼれ落ち、不足を生
じてもその都度補充することにより、常に容器ｌの密閉
性を維持することができるので、容器１内の揮発性構成
元素（例、Ａｓ）の蒸気の散逸を防止できるため、ロス
を著しく減少することができ、かつ単結晶の長時間引」
二げが可能になる。If such a sealing material replenishing device 9 is provided, even if the liquid sealing material 8 in the sealing part 6.7 spills out due to a pressure imbalance between the inside and outside of the container 1 during single crystal pulling, and there is a shortage, it can be removed each time. By refilling, the airtightness of the container 1 can be maintained at all times, and the vapor of volatile constituent elements (e.g., As) in the container 1 can be prevented from dissipating, so losses can be significantly reduced. "And single crystal long-duration"
It becomes possible to double.

又シール部６．７において、液体シール材（１例、Ｂ２
０３）がチャージ時点（室温）では固体の塊であるため
、シール材収容部分の充填効率が悪く、シールに必要な
シール材原料（例、Ｂ２０３）をチャーンするにはシー
ル材収容部分を大きくする必要がある。又とぼれ落ち等
による液体シール相不足の対策のために予め過剰にシー
ル材原料をチャージする場合には、さらにシール材収容
部分の容積を大きくしなければならない。本発明では、
別のシール材補充容器にシール材をチャージし、上記シ
ール材収容部分に充填すること、又は適宜補充すること
が可能であるだめ、シール部のシール材収容部分を必要
最小限に小さくすることができ、コンパクトにすること
が可能である。In addition, in the seal portion 6.7, a liquid sealing material (one example, B2
03) is a solid lump at the time of charging (room temperature), the filling efficiency of the sealing material storage part is poor, and in order to churn the sealing material raw material (e.g. B203) necessary for sealing, the sealing material storage part must be enlarged. There is a need. Furthermore, if an excessive amount of sealing material raw material is charged in advance in order to prevent a shortage of liquid sealing phase due to spillage, etc., the volume of the sealing material storage portion must be further increased. In the present invention,
Since it is possible to charge the sealant into a separate sealant replenishment container and fill it into the sealant accommodating portion, or to replenish it as appropriate, it is possible to reduce the sealant accommodating portion of the sealing portion to the minimum necessary size. It is possible to make it compact.

（実施例） 第２図に示す寸法の単結晶育成装置を用い、ＧａＡｓ化
合物半導体単結晶を育成した。(Example) A GaAs compound semiconductor single crystal was grown using a single crystal growth apparatus having the dimensions shown in FIG.

液体シー）ｖ利８としてＢ２Ｏ３融液を用い、石英容器
１内を約１気圧のＡｓ蒸気雰囲気に°した。シー／し部
６のＢ２Ｏ３融液収容部■は容積４７７で、シール部７
のＢ２Ｏ３融液収容部■は容積５０７であり、Ｂ２Ｏ３
チャージ量は収容部■が４０ｙ、収容部■が５０９であ
る。Ｂ２Ｏ３の密度が室温にて約１．７　ｙ　／ｃｒｔ
ｌであるため、本来必要な収容部■、■の容積は犬々２
４７．２９７である。従って］１記Ｂ２Ｏ３量をチャー
ジするためには本来必要な容積の１７〜２倍の容積を必
要としだ。A B2O3 melt was used as the liquid container 8, and the inside of the quartz container 1 was made into an As vapor atmosphere at about 1 atmosphere. The B2O3 melt storage part ■ of the sealing part 6 has a volume of 477, and the sealing part 7
The B2O3 melt storage part ■ has a volume of 507, and the B2O3
The amount of charge is 40y in the storage part (■) and 509y in the storage part (■). The density of B2O3 is approximately 1.7 y/crt at room temperature
1, the originally required volume of the storage sections ■ and ■ is 2
It is 47.297. Therefore, in order to charge the amount of B2O3 mentioned above, a volume 17 to 2 times the originally required volume is required.

このような装置を使用し、シール材補充装置９を使用し
ない単結晶引上げ実験では、通常Ｂ２Ｏ３融液収容部■
で１０ｙ、収容部■で２０〜２５ｙ程度のＢ２Ｏ３のロ
スが生じる。特にシール部７は圧力バランスのずれによ
’Ｊ　Ｂｚ（’ａ融液が収容部■よりこぼれ易く、ロス
が大きいため、Ａｓｘ気の散逸が発生する。In a single crystal pulling experiment using such a device and not using the sealant replenishing device 9, the B2O3 melt storage section
There is a loss of B2O3 of about 10y in the storage part (2) and about 20 to 25y in the storage part (2). In particular, in the sealing part 7, due to a shift in pressure balance, the melt tends to spill out from the storage part 2, and the loss is large, resulting in the dissipation of Asx gas.

本発明によるシール材補充装置９として、モリブデン製
の一端に管］１を付けた直径５０厘、長さ６０ｍｍの円
筒補充容器１０の周りにカンク／Ｉ／製のヒーター線１
２を巻付けたものをシール部６に設置した。ヒーターパ
ワーは約８００Ｗであった。The sealing material replenishment device 9 according to the present invention is a cylindrical replenishment container 10 with a diameter of 50 mm and a length of 60 mm and a molybdenum tube 1 attached to one end.
2 was wound around and installed in the sealing part 6. Heater power was approximately 800W.

円筒補充容器１０に約１００りの８２０８をチャージし
、シール部６への補充はヒーター線１２への通電のＯＮ
−ＯＦＦによって行なった。The cylindrical replenishment container 10 is charged with about 100 8208, and the seal portion 6 is refilled by turning on the power to the heater wire 12.
-OFF.

本発明によるシー／Ｉ／利補充装置９の設置により、シ
ール部６のＢ２Ｏ３融液のこぼれ落ちの都度補充できる
と共に、そのだめＢ２Ｏ３融液収容部■の容積を、Ａｓ
蒸気を散逸せずに従来の５０７から３５７に減少するこ
とができ、石英容器ｌをコンパクトにすることが可能と
なった。By installing the sea/I/replenishment device 9 according to the present invention, it is possible to replenish the B2O3 melt in the sealing part 6 every time it spills, and the volume of the B2O3 melt storage part (2) can be increased by As
The number of quartz containers can be reduced from the conventional 507 to 357 without dissipating steam, making it possible to make the quartz container l more compact.

（発明の効果） 上述のように構成された本発明の単結晶育成装置は次の
ような効果がある。(Effects of the Invention) The single crystal growth apparatus of the present invention configured as described above has the following effects.

（イ）　容器の液体シール部に前記液体シール材を補充
するシール拐補充装置を設けたから、単結晶引上げ中、
容器の内外の圧力バランヌのずれ等によりシール部の液
体シール材がこぼれ落ち、不足を生じても、その都度シ
ール材を補充して、常に容器の密閉性を維持することが
できるので、容器内の雰囲気蒸気の散逸を防止できるだ
め、ロスを著しく減少することができ、かつ単結晶の長
時間引」：げが出来る。(b) Since the liquid sealing part of the container is provided with a seal replenishment device that replenishes the liquid sealing material, during single crystal pulling,
Even if the liquid sealing material in the seal part spills out due to misalignment of the pressure balance between the inside and outside of the container and becomes insufficient, the sealing material can be replenished each time and the container's airtightness can always be maintained. Since the dissipation of atmospheric vapor can be prevented, loss can be significantly reduced, and single crystals can be pulled for a long time without causing cracks.

（ロ）　シール材補充装置によりシール部のシール材収
容部に液体シール材の状態で最初充填することや適宜補
充することが可能であるので、シー／Ｉ／利収容部に前
述のような固体原料の容積増加分や洩れを見越した過剰
分のような余分の容積を必要とせず、シール材収容部分
を必要最小限に小さくすることができるので、容器をコ
ンパクト化することができる。(b) Since the sealing material replenishment device allows the sealing material storage section of the sealing section to be initially filled with liquid sealing material and to be replenished as needed, it is possible to fill the sealing material storage section of the sealing section with liquid sealing material and replenish it as needed. There is no need for extra volume such as an increase in the volume of the raw material or an excess volume in anticipation of leakage, and the sealing material housing portion can be reduced to the minimum necessary size, so the container can be made more compact.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の単結晶育成装置の例を示す縦断面図であ
る。 第２図は本発明装置の実施例を示す縦断面図である。 １・・容器、２・・・原料融液、３・・・るつぼ、−４
・・引上軸、５・・・種結晶、６．７・・・シール部、
８・・、液体シール利、９・・・シール材補充装置、１
ｏ・・・補充容器、１１・・・管、１２・・・ヒーター
線、■、■・　Ｂ２Ｏ３融液収容部。 代理人　弁理士　青　木　秀　實０ Ｒ１図 方２図 手　続　補　正　書 昭和５９年グ月２乙日 特許庁長官　若　杉　和　夫　殿 １、事件の表示 昭和　５８年　特許願　第　１４４１５０　号２、発明
の名称 単結晶育成装置 ３、補正をする者 事件との関係　特許出願人 住　所　大阪市東区北浜５丁目１５番地名称（２１３）
　住友電気工業株式会社代表者社長　川」−四部 ４、代理人 住　所　大阪市淀用区西中島１丁目９番２０号６、補正
の対象 明細書中、発明の詳細な説明の憚。 ７、補正の内容 明細書、第９頁、第４行目、 ｒ５０ｃｍ３Ｊをｒ４７ｃｍ３Ｊに訂正する。FIG. 1 is a longitudinal sectional view showing an example of a conventional single crystal growth apparatus. FIG. 2 is a longitudinal sectional view showing an embodiment of the device of the present invention. 1... Container, 2... Raw material melt, 3... Crucible, -4
... Pulling shaft, 5 ... Seed crystal, 6.7 ... Seal part,
8..., liquid sealing agent, 9... sealing material replenishment device, 1
o...Replenishment container, 11...Tube, 12...Heater wire, ■, ■・B2O3 melt storage section. Agent Patent Attorney Hidetoshi Aoki 0 R1 Drawings 2 Drawings Continuation Amendment Written on August 2nd, 1980 Commissioner of the Patent Office Kazuo Wakasugi 1, Indication of the case 1980 Patent Application No. 144150 2, Title of the invention: Single crystal growth device 3, relationship to the amended case Patent applicant address: 5-15 Kitahama, Higashi-ku, Osaka Name (213)
Sumitomo Electric Industries Co., Ltd. Representative President Kawa" - Part 4, Agent Address: 1-9-20-6 Nishinakajima, Yodoyo-ku, Osaka City. The detailed description of the invention is not included in the specification to be amended. 7. Statement of contents of amendment, page 9, line 4, r50cm3J is corrected to r47cm3J.

Claims (3)

【特許請求の範囲】[Claims] （１）　容器内に単結晶育成部が収容され、該容器の軸
部および／又は開口部が液体シール材によシシールされ
た、チョクラルスキー法による単結晶育成装置において
、液体シール部に前記液体シール材を補充するシール材
補充装置を設けたことを特徴とする単結晶育成装置。(1) In a single crystal growth apparatus using the Czochralski method, in which a single crystal growth section is housed in a container, and the shaft and/or opening of the container is sealed with a liquid sealing material, the liquid sealing section is A single crystal growth apparatus characterized by being provided with a sealing material replenishing device for replenishing liquid sealing material. （２）　液体ンール材がＢ２Ｏ３融液であり、シー／ｌ
／利補充装置がモリブデン、パイロリチツクボロンナイ
トライド（ＰＢＮ）又はボロンナイトライドより成る補
充容器を有する特許請求の範囲第１項記載の単結晶育成
装置。(2) The liquid material is a B2O3 melt, and the sea/l
2. The single crystal growth apparatus according to claim 1, wherein the replenishment device includes a replenishment container made of molybdenum, pyrolytic boron nitride (PBN), or boron nitride. （３）　シール材補充装置が、一端に管の付いた補充容
器と、その周シに巻付けられたヒーター線を具備する特
許請求の範囲第１項又は第２項記載の単結晶育成装置。(3) The single crystal growth apparatus according to claim 1 or 2, wherein the sealing material replenishment device comprises a replenishment container with a tube at one end and a heater wire wound around the replenishment container.
JP14415083A 1983-08-06 1983-08-06 Apparatus for growing single crystal Pending JPS6036398A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP14415083A JPS6036398A (en) 1983-08-06 1983-08-06 Apparatus for growing single crystal
EP84304106A EP0138292B1 (en) 1983-08-06 1984-06-18 Apparatus for the growth of single crystals
DE8484304106T DE3466785D1 (en) 1983-08-06 1984-06-18 Apparatus for the growth of single crystals
US06/625,537 US4873062A (en) 1983-08-06 1984-06-28 Apparatus for the growth of single crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14415083A JPS6036398A (en) 1983-08-06 1983-08-06 Apparatus for growing single crystal

Publications (1)

Publication Number Publication Date
JPS6036398A true JPS6036398A (en) 1985-02-25

Family

ID=15355376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14415083A Pending JPS6036398A (en) 1983-08-06 1983-08-06 Apparatus for growing single crystal

Country Status (1)

Country Link
JP (1) JPS6036398A (en)

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