JPS6032330A - Oil-sealed equalizing semiconductor device - Google Patents
Oil-sealed equalizing semiconductor deviceInfo
- Publication number
- JPS6032330A JPS6032330A JP58141192A JP14119283A JPS6032330A JP S6032330 A JPS6032330 A JP S6032330A JP 58141192 A JP58141192 A JP 58141192A JP 14119283 A JP14119283 A JP 14119283A JP S6032330 A JPS6032330 A JP S6032330A
- Authority
- JP
- Japan
- Prior art keywords
- sealed
- pressure
- semiconductor element
- flange
- oil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、油封均圧形半導体装置に係シ、特に外部雰囲
気圧の高い状況下での使用に適した構造を有する油封均
圧形半導体装置に関するものである。３０００〜１００
００ｍ級の大深度海中で使用する潜水船、無人機等は、
その電源を効率的に制御するためにインバータ、コンバ
ータ、チョッパー等の電力制御装置を必要とする。これ
らの装置をこのような深海中で使用するには、耐圧容器
中に収納する必要がある。大深度の水圧に耐える耐圧容
器は、その重量が大きくなシ、潜水船、無人機等金型く
する。このため浮力を大きくしようとすると、耐圧容器
自体が大きくなシ、所定の大きさの潜水船等を組立てら
れなくなる。そこで、この様な条件下で使用される半導
体装置は、大圧力に耐えると同時に、小型軽量であるこ
とが強く要求される。従来一般に製造されている半導体
装置では、３００Ｒりｆ／ｃｒｄ〜１ｏ ｏ ｏ Ｋｙ
ｆＡｒｔＪ程度の外部圧力下で使用に耐えるものはなか
った。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an oil-sealed, pressure-equalized semiconductor device, and more particularly to an oil-sealed, pressure-equalized semiconductor device having a structure suitable for use under conditions of high external atmospheric pressure. 3000~100
Submersibles, unmanned aerial vehicles, etc. used in the deep sea of 00m class,
In order to efficiently control the power source, power control devices such as inverters, converters, and choppers are required. In order to use these devices in such deep seas, they must be housed in pressure-resistant containers. Pressure-resistant containers that can withstand water pressure at great depths are molded into vessels that are heavy, such as submarines, unmanned aerial vehicles, etc. For this reason, if an attempt is made to increase the buoyancy, the pressure vessel itself will be too large, making it impossible to assemble a submersible of a predetermined size. Therefore, semiconductor devices used under such conditions are strongly required to withstand large pressures and at the same time to be small and lightweight. Conventionally, commonly manufactured semiconductor devices have 300Rf/crd~1o o o Ky
There was nothing that could withstand use under an external pressure comparable to fArtJ.
第１図は従来の平形半導体装置の断面構造図であり、図
中１は、セラミック等からなる絶縁体筒である。絶縁体
筒１内には、所定の半導体素子２が収容されている。半
導体素子２はその周側面と絶縁体筒１の内壁面間に位置
決めリング３を介して固定されている。半導体素子２の
上下の両主面には、外部電極４，４が圧接されている。FIG. 1 is a cross-sectional structural diagram of a conventional flat semiconductor device, and numeral 1 in the figure is an insulator tube made of ceramic or the like. A predetermined semiconductor element 2 is housed within the insulator cylinder 1 . The semiconductor element 2 is fixed between its circumferential surface and the inner wall surface of the insulator cylinder 1 via a positioning ring 3. External electrodes 4, 4 are pressed into contact with both the upper and lower principal surfaces of the semiconductor element 2.
外部電極４．４と絶縁体筒１間には、上部フランジ５ａ
及び下部フランジ５ｂが夫々ろう付され、半導体素子２
の収納容器６を構成している。このようにして半導体素
子２を気密状態で収納した収納容器６内には、不活性ガ
ス７が封入されている。An upper flange 5a is provided between the external electrode 4.4 and the insulator cylinder 1.
and the lower flange 5b are brazed, respectively, and the semiconductor element 2
It constitutes a storage container 6. An inert gas 7 is sealed in the storage container 6 in which the semiconductor element 2 is thus stored in an airtight state.
この様な半導体装置では、高い外部圧力が加わった場合
、装置外装を構成する材料の錆性が低いために、外部圧
力に耐えることができず、例えばフランジ部分などが変
形破断し、装置の気密が損なわれて初期の電気的特性が
劣化する。In such semiconductor devices, when high external pressure is applied, the materials that make up the device exterior have low rust resistance, so they cannot withstand the external pressure, and for example, the flange part deforms and breaks, causing the device to become airtight. is damaged and the initial electrical characteristics deteriorate.
即ち、この様な半導体装置は、高い外部雰囲気圧の下で
使用することはできない。第２図は、従来の半導体装置
内部に電気絶縁油を封入した改良形の半導体装置を示す
。図中８は電気絶縁油である。又第１図と同一番号は、
同等の構成部分を示す。この様な半導体装置においては
、外部圧力の増加に伴って内部の電気絶縁油の圧力も増
加するので、外装の変形が緩和される均圧形パッケージ
を得ることができる。しかし、絶縁油であっても、圧力
による体積変化や、温度による体積変化を起こすので、
ある程度以上の外部圧力の下では単に油全充填したのみ
の構造では圧力の急激な変化に対して耐え得ないことが
わかった。即ち、高い外部雰囲気圧の下でに変形し、収
納容器６が破損する。その結果、半導体素子２の電気的
特性全損う問題がちった。That is, such a semiconductor device cannot be used under high external atmospheric pressure. FIG. 2 shows an improved semiconductor device in which electrical insulating oil is sealed inside the conventional semiconductor device. 8 in the figure is electrical insulating oil. Also, the same numbers as in Figure 1 are
Equivalent components are shown. In such a semiconductor device, the pressure of the internal electrical insulating oil also increases as the external pressure increases, so it is possible to obtain a pressure-equalizing package in which deformation of the exterior is alleviated. However, even insulating oil causes volume changes due to pressure and temperature, so
It was found that under external pressure above a certain level, a structure simply filled with oil could not withstand sudden changes in pressure. That is, the storage container 6 is deformed under high external atmospheric pressure and damaged. As a result, a problem arose in which the electrical characteristics of the semiconductor element 2 were completely lost.
装置の外部にベローズを付加して、圧力変化に対する絶
縁油の体積変化を吸収しようとする試みは例えば、第４
図の様に油封式均圧形モーターなどで実用化されている
。図中２１はロータであシ、その回転軸２２金軸受け２
３を介してフレーム２４から外部に導出している７、フ
レーム２４の内周面には、ロータ２ノに対向するように
してステーター２５が取伺けられている。For example, an attempt was made to add a bellows to the outside of the device to absorb changes in the volume of insulating oil due to changes in pressure.
It has been put into practical use with oil-sealed pressure equalizing motors, as shown in the figure. In the figure, 21 is the rotor, its rotating shaft 22 gold bearing 2
A stator 25 is provided on the inner circumferential surface of the frame 24, which is led out from the frame 24 via the rotor 2.
フレーム２４の後端部に回転軸２２の端部は、均圧ベロ
ーズ２６で囲まれている。均圧ベローズ２６及びフレー
ム２４に囲まれた内部には、均圧油２７が封入されてい
る。前述の油封状均圧形モーターにおいてはベローズと
して、例えばゴム等のやわらかい材質のベローズを取シ
付けることも可能であるが、半導体装置の場合には、容
器内に収納される半導体素子が、非常に構造敏感性であ
るために、極めて高い密封度と不活性な内部雰囲気が要
求される。従って一般に金属およびセラミック壁による
気密封止がなされている。又、耐腐食性全考慮するとあ
まり薄い金属壁を使用することも困難である。従って第
５図の様に外部にベローズを付加しようとした場合装置
の内容積が大きくなシすぎて、逆に封入オイルの量を増
やさねばならなくなシ、従って体積変化量が増大するの
で、大型のベローズを必要とする。この様な構造は先に
述べたシステム全体からの大きさの制約や取り扱い上の
問題、さらには製造コストの観点から見ても実現性が低
い。The end of the rotating shaft 22 at the rear end of the frame 24 is surrounded by a pressure equalizing bellows 26 . Pressure equalizing oil 27 is sealed inside the pressure equalizing bellows 26 and frame 24 . In the above-mentioned oil-sealed pressure equalizing motor, it is possible to install a bellows made of a soft material such as rubber, but in the case of a semiconductor device, the semiconductor element housed in the container is extremely sensitive. Due to their structural sensitivities, extremely high degrees of sealing and an inert internal atmosphere are required. Therefore, hermetically sealed metal and ceramic walls are generally used. Also, it is difficult to use a metal wall that is too thin in terms of corrosion resistance. Therefore, if you try to add a bellows externally as shown in Figure 5, the internal volume of the device will be too large, and you will have to increase the amount of sealed oil, which will increase the amount of volume change. Requires large bellows. Such a structure has low feasibility from the viewpoint of the above-mentioned size restrictions and handling problems of the entire system, as well as manufacturing costs.
本発明は、かかる点に鑑みてなされたものであシ、電気
絶縁油の容積変化を７ランク部の弾性変形によって吸収
せしめて、半導体素子の優れた特性を発揮させると共に
、簡単な構造で高耐圧を有する油封均圧形半導体装置を
提供するものである。The present invention has been made in view of the above-mentioned problems.The present invention allows the change in the volume of electrical insulating oil to be absorbed by the elastic deformation of the 7-rank portion, thereby exhibiting the excellent characteristics of semiconductor elements, and having a simple structure and high performance. The present invention provides an oil-sealed pressure-equalizing semiconductor device that has pressure resistance.
即ち、本発明は、少なくとも２つの主面を持つ半導体素
子と、該半導体素子全その側端面で支持して収容した絶
縁体筒と、前記主面の夫々に接触して設けられた外部電
極と、前記半導体素子を外気から遮断密閉するように前
記外部電極と前記絶縁体筒間に取付けられ、かつ、外部
の雰囲気の圧力変化に追従して弾性変形する７ランク部
と、該７ランク部、前記外部電極、及び前記絶縁体筒で
囲まれた内部に前記半導体素子全封止するように封入さ
れた電気絶縁油とを具備する油封均圧形半導体装置であ
る。That is, the present invention provides a semiconductor element having at least two main surfaces, an insulator tube supporting and housing the semiconductor element by its entire side end surface, and an external electrode provided in contact with each of the main surfaces. , a 7-rank part that is attached between the external electrode and the insulator cylinder so as to isolate and seal the semiconductor element from the outside air, and that is elastically deformed in accordance with pressure changes in the external atmosphere; The present invention is an oil-sealed, pressure-equalized semiconductor device comprising the external electrode and electrical insulating oil sealed inside the insulating cylinder so as to completely seal the semiconductor element.
以下、本発明の実施例について図面全参照して説明する
。Embodiments of the present invention will be described below with reference to all the drawings.
第６図は、本発明の一実施例の断面図である図中３０は
、半導体素子である。半導体素子３０は、セラミック等
からなる絶縁体筒３１内に収容されている。半導体素子
３０は、その側端面と絶縁体筒３１の内壁面間に介在さ
れた位置決めリング３２によって固定されている。半導
体素子３０の表裏側主面には、外部電極３３ａ。FIG. 6 is a sectional view of one embodiment of the present invention. In the figure, 30 is a semiconductor element. The semiconductor element 30 is housed in an insulator cylinder 31 made of ceramic or the like. The semiconductor element 30 is fixed by a positioning ring 32 interposed between its side end surface and the inner wall surface of the insulator cylinder 31. External electrodes 33a are provided on the front and back main surfaces of the semiconductor element 30.
３３ｂが取付けられている絶縁体筒３１の下端部と裏面
側の外部電極３３ｂ間には、下部フランジ３４ｂが取付
けられている。絶縁体筒３ノの上端部と表面側の外部電
極３３ａ間には、上部フランジ３４＆が取付けられてい
る。上部フランジ３４ａは、外部電極３３ａと絶縁体筒
３ノの間で折曲し、この折曲部によって半導体素子３０
を囲む領域と連通ずる中空部３３ｃｆ形成している。上
部フランジ３４ｈは、この中空部３３ｃによって外力を
受けた際に弾性変形するようになっている。上部の外部
電極３３ａの直下及び位置決めリング３２の上方の領域
には、上部位置決めリング３２ｂが設けられている。A lower flange 34b is attached between the lower end of the insulator tube 31 to which the insulator tube 33b is attached and the external electrode 33b on the back side. An upper flange 34& is attached between the upper end of the insulator tube 3 and the outer electrode 33a on the surface side. The upper flange 34a is bent between the external electrode 33a and the insulator tube 3, and this bent portion allows the semiconductor element 30
A hollow portion 33cf is formed which communicates with the area surrounding the area. The upper flange 34h is configured to be elastically deformed when external force is applied to the hollow portion 33c. An upper positioning ring 32b is provided directly below the upper external electrode 33a and above the positioning ring 32.
外部電極３３ｔＬと絶縁体筒３１、及びこれらにジ３４
ｂによって収納容器３５が構成されている６、収納容器
３５内には半導体素子３０全密刺して封止するように、
電気絶縁油３６が封入されている。絶縁体筒３ノの側部
には、電気絶縁油３６の封入管３７が導出しておｐｌそ
の先端部は封口されている。電気絶縁油３６としては、
例えばシリコン油を用いるのが望ましい。The external electrode 33tL, the insulator tube 31, and the diode 34 are attached to these.
A storage container 35 is constituted by b, and the semiconductor element 30 is completely inserted into the storage container 35 so as to be sealed.
Electrical insulating oil 36 is sealed. A sealed tube 37 containing electrical insulating oil 36 is led out from the side of the insulator cylinder 3, and its tip end is sealed. As the electrical insulating oil 36,
For example, it is desirable to use silicone oil.
このように構成きれた油封均圧形半導体装置りによれば
、上部フランジ３４ａ’ｚ折曲して中空部３３ｃｆ形成
し、弾性変形できるようにしたので、外部からの高圧力
が加わっても、第７図に二点鎖線４１で示す如く、上部
フランジ、９４ａが弾性変形によりその際の圧力全吸収
する。同様に電気絶縁油３６の容積が温度変化或は圧力
変化によって変化しても上部フランジ３４＆によって吸
収される。その結果、半導体素子３０に不均一な圧力が
加わるの全阻止して、優れた素子特性全発揮させること
ができる。しかも、収納容器３５は、内部に電気絶縁油
３６を封入した状態になっているので、耐圧の向上全達
成できる。According to the oil-sealed, pressure-equalized semiconductor device constructed in this way, the upper flange 34a'z is bent to form the hollow part 33cf so that it can be elastically deformed, so even if high pressure is applied from the outside, As shown by the two-dot chain line 41 in FIG. 7, the upper flange 94a absorbs all of the pressure caused by elastic deformation. Similarly, even if the volume of the electrical insulating oil 36 changes due to changes in temperature or pressure, this is absorbed by the upper flange 34&. As a result, it is possible to completely prevent uneven pressure from being applied to the semiconductor element 30 and to fully exhibit excellent element characteristics. Moreover, since the storage container 35 is in a state in which the electrical insulating oil 36 is sealed inside, the withstand pressure can be completely improved.
なお、スタック構造の電力制御装置を組立てる場合には
、第８図に示す如く、油封均圧形半導体装置ＬＡの外部
電極３３ａ、３３ｂにスタック板４２を数百〜数千ｔｉ
ｔ ｆで圧接することにより、容易に構成することがで
きる。When assembling a power control device with a stacked structure, as shown in FIG.
It can be easily configured by pressure contact at t f.
以上説明した如く、本発明に係る油封均圧形半導体装置
によれば、電気絶縁油の容積変化をフランジ部の弾性変
形によって吸収せしめて、半導体素子の優れた特性を発
揮させると共に、簡単な構造で高耐圧を有するものであ
る。As explained above, according to the oil-sealed pressure-equalized semiconductor device according to the present invention, changes in the volume of electrical insulating oil are absorbed by the elastic deformation of the flange portion, and the excellent characteristics of the semiconductor element are exhibited, and the structure is simple. It has high withstand voltage.
第１図及び第２図はそれぞれ従来の均圧形半導体装置の
断面図、第３図は第２図に示す半導体装置のフランジ部
が外部圧力によって変形している状態を示す説明図、第
５図は、従来の油封均圧形半導体装置の断面図、第４図
は油封式均圧形モータの断面図、第６図は本発明の一実
施例の断面図、第７図は同実施例の油封均圧形半導体装
置のフランジ部の変形状態を示す説明図、第８図は同実
施例の油封均圧形半導体装置全組込んだスタック構造の
ものを示す説明図である。
３０・・・半導体素子、３１・・・絶縁体筒、３２・・
・位置決めリング、３３＆、３３ｂ・・・外部電極、３
３ｃ・・・中空部、３４ａ・・・上部フランジ、３４ｂ
・・・下部フランジ、３５・・・収納容器、３６・・・
電気絶縁油、３７・・・封入管、４０・・・油封均圧形
半導体装置、４２°・・スタック板。
出願人復代理人 弁理士 鈴 江 武 彦矛４図
２７
：ＪＰ５図
オ６図
り
８７図
＋８図1 and 2 are respectively cross-sectional views of conventional pressure equalizing type semiconductor devices, FIG. 3 is an explanatory diagram showing a state in which the flange portion of the semiconductor device shown in FIG. 2 is deformed by external pressure, and FIG. The figure is a sectional view of a conventional oil-sealed pressure-equalizing semiconductor device, FIG. 4 is a sectional view of an oil-sealed pressure-equalizing motor, FIG. 6 is a sectional view of an embodiment of the present invention, and FIG. 7 is a sectional view of the same embodiment. FIG. 8 is an explanatory diagram showing a deformed state of the flange portion of the oil-sealed pressure-equalizing semiconductor device according to the same embodiment, and FIG. 30... Semiconductor element, 31... Insulator tube, 32...
・Positioning ring, 33&, 33b...External electrode, 3
3c...Hollow part, 34a...Upper flange, 34b
...Lower flange, 35...Storage container, 36...
Electrical insulating oil, 37...Enclosed tube, 40...Oil-sealed pressure-equalizing semiconductor device, 42°...Stack plate. Applicant Sub-Agent Patent Attorney Takehiko Suzue Figure 4 27: JP Figure 5 O 6 Figure 87 + Figure 8
Claims (1)
子をその側端面で支持して収容した絶縁体筒と、前記主
面の夫々に接触して設けられた外部電極と、前記半導体
素子を外気から遮断密閉するように前記外部電極と前記
絶縁体筒間に取付けられ、かつ、外部の雰囲気の圧力変
化に追従して弾性変形するフランジ部と、該フランジ部
、前記外部電極、及び前記絶縁体筒で囲まれた内部に前
記半導体素子を封止するように封入された電気絶縁油と
を具備することを特徴とする油封均圧形半導体装置。a semiconductor element having at least two main surfaces; an insulating tube supporting and accommodating the semiconductor element on its side end surfaces; an external electrode provided in contact with each of the main surfaces; a flange portion that is attached between the external electrode and the insulator cylinder so as to be sealed and sealed from the outside, and that elastically deforms in accordance with pressure changes in the external atmosphere; the flange portion, the external electrode, and the insulator; 1. An oil-sealed pressure-equalizing semiconductor device, comprising: an electrically insulating oil sealed in an interior surrounded by a cylinder so as to seal the semiconductor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58141192A JPS6032330A (en) | 1983-08-03 | 1983-08-03 | Oil-sealed equalizing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58141192A JPS6032330A (en) | 1983-08-03 | 1983-08-03 | Oil-sealed equalizing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6032330A true JPS6032330A (en) | 1985-02-19 |
Family
ID=15286296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58141192A Pending JPS6032330A (en) | 1983-08-03 | 1983-08-03 | Oil-sealed equalizing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6032330A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01248578A (en) * | 1988-03-25 | 1989-10-04 | Internatl Business Mach Corp <Ibm> | Magnetoresistance converter element and its manufacture |
| US6090498A (en) * | 1996-12-27 | 2000-07-18 | Tdk Corporation | Magnetoresistance effect element and magnetoresistance device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49108976A (en) * | 1972-05-15 | 1974-10-16 | ||
| JPS5621352A (en) * | 1979-07-28 | 1981-02-27 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1983
- 1983-08-03 JP JP58141192A patent/JPS6032330A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49108976A (en) * | 1972-05-15 | 1974-10-16 | ||
| JPS5621352A (en) * | 1979-07-28 | 1981-02-27 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01248578A (en) * | 1988-03-25 | 1989-10-04 | Internatl Business Mach Corp <Ibm> | Magnetoresistance converter element and its manufacture |
| US6090498A (en) * | 1996-12-27 | 2000-07-18 | Tdk Corporation | Magnetoresistance effect element and magnetoresistance device |
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