JPS6027827A - Substrate-temperature measuring method - Google Patents
Substrate-temperature measuring methodInfo
- Publication number
- JPS6027827A JPS6027827A JP13662683A JP13662683A JPS6027827A JP S6027827 A JPS6027827 A JP S6027827A JP 13662683 A JP13662683 A JP 13662683A JP 13662683 A JP13662683 A JP 13662683A JP S6027827 A JPS6027827 A JP S6027827A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- light
- bimetal
- temperature
- reflected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K5/00—Measuring temperature based on the expansion or contraction of a material
- G01K5/48—Measuring temperature based on the expansion or contraction of a material the material being a solid
- G01K5/56—Measuring temperature based on the expansion or contraction of a material the material being a solid constrained so that expansion or contraction causes a deformation of the solid
- G01K5/62—Measuring temperature based on the expansion or contraction of a material the material being a solid constrained so that expansion or contraction causes a deformation of the solid the solid body being formed of compounded strips or plates, e.g. bimetallic strip
- G01K5/70—Measuring temperature based on the expansion or contraction of a material the material being a solid constrained so that expansion or contraction causes a deformation of the solid the solid body being formed of compounded strips or plates, e.g. bimetallic strip specially adapted for indicating or recording
- G01K5/72—Measuring temperature based on the expansion or contraction of a material the material being a solid constrained so that expansion or contraction causes a deformation of the solid the solid body being formed of compounded strips or plates, e.g. bimetallic strip specially adapted for indicating or recording with electric transmission means for final indication
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体等の製造プロセスにおいて、半導体等を
製造する基板そのもの＼温度の測定方法に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for measuring the temperature of the substrate itself used to manufacture semiconductors and the like in the manufacturing process of semiconductors and the like.
半導体等の製造プロセスの基板の諸加工に於いては、基
板温度の確定が１要な条件となることが多い。例えば、
蒸着あるいはスパッタリング時の基板の加熱温度は被蒸
着物がアルミニウムで基板がシリコンの場合には９例え
ばシリコン基板温度う現象があり、この為、シリコン基
板の温度を３５０℃以下のきめられた範囲にコントロー
ルする必要がある。しかし、この場合蒸着膜を均一に分
布させるためや量産の為に基板を移動９回転させること
が多く、又更に、基板に高電圧を印加する場合もあって
熱血対、サーミスター等を用いる基板温度の直接測定は
不可能である１、熱電対等のほかには赤外線式の無接触
表面温度計を用いる測定法があるがこれには、基板表面
の輻射率のちがいにより測定温度が大きく浮動し表面の
温度を一義的に決め難いという欠点がある。2. Description of the Related Art In processing substrates in semiconductor manufacturing processes, determining the substrate temperature is often a necessary condition. for example,
The heating temperature of the substrate during evaporation or sputtering is such that when the object to be evaporated is aluminum and the substrate is silicon, there is a phenomenon in which the temperature of the silicon substrate decreases. need to be controlled. However, in this case, the substrate is often moved nine times in order to distribute the deposited film uniformly or for mass production, and in some cases, a high voltage is applied to the substrate, so a hot-blooded coupler, thermistor, etc. Direct measurement of temperature is impossible1.In addition to thermocouples, there is a measurement method that uses an infrared non-contact surface thermometer, but this method does not allow for large fluctuations in the measured temperature due to differences in the emissivity of the substrate surface. The drawback is that it is difficult to determine the surface temperature unambiguously.
本発明はこの問題の克服を目的とするもので、基板の表
面又は裏面に直接に、蒸着又は写真食刻法によって、バ
イメタルを作成し温度によって起るこのバイメタルの屈
曲を、基板外から光を投射して屈曲面から反射してくる
光の変位を電気的に読み取ることによって無接触で検出
し、基板温度を測定するものである。The purpose of the present invention is to overcome this problem by creating a bimetal directly on the front or back surface of the substrate by vapor deposition or photoetching, and then applying light from outside the substrate to prevent the bending of this bimetal caused by temperature. By electrically reading the displacement of the projected light reflected from the curved surface, it is detected without contact and the substrate temperature is measured.
第１回は本発明の実施例であって１は基板、２４５のバ
イメタル部を拡大したものである。The first one is an example of the present invention, in which numeral 1 is a substrate and 245 is an enlarged view of a bimetal part.
第２図に於いて、４５は基板１上に形成された。In FIG. 2, 45 is formed on the substrate 1. In FIG.
線膨張係数の異なる二種の金属素材４と５を用いて多層
構造に形成されたバイメタルである。その人
形式方法については後述する。投光器６より投射された
光は光路変換器（例えば薄い屈折プリズム）９を経て入
射光７１となり、これが基板１の面で反射され反射光７
２となって位置センサー８に入る。It is a bimetal formed into a multilayer structure using two types of metal materials 4 and 5 having different coefficients of linear expansion. The form of the person will be described later. The light projected from the projector 6 passes through an optical path converter (for example, a thin refractive prism) 9 and becomes incident light 71, which is reflected by the surface of the substrate 1 and becomes reflected light 7.
2 and enters the position sensor 8.
位置センサー８はこれへの入射光の入射位置の関数で増
幅器１０の出力ｖ１がきまるよう構成されている。基相
１の反射光７２は位置センサー８の出力の基準をきめる
ものである。次いて光路変換器９を例えば５°回転し投
光器の光７を７５に変え。The position sensor 8 is configured such that the output v1 of the amplifier 10 is determined as a function of the position of the incident light thereon. The reflected light 72 of the base phase 1 determines the reference for the output of the position sensor 8. Next, the optical path changer 9 is rotated, for example, by 5 degrees, and the light 7 of the projector is changed to 75.
入射光７５がバイメタルの屈曲面上で反射されて来た反
射光７３の位置を位置センサー８で検出してその出力■
２がまる。基や１の温度が上昇又は下降するとバイメタ
ルは屈曲の傾きを変えこのため入射光７５の反射光は７
４となって位置センサー８に入り出力■３がえられる。A position sensor 8 detects the position of the reflected light 73 where the incident light 75 is reflected on the curved surface of the bimetal, and the output is
2 is full. When the temperature of the base 75 increases or decreases, the bimetal changes its bending angle, so that the reflected light of the incident light 75 becomes 7
4 and enters the position sensor 8, giving an output ■3.
従って、Ｖ３−Ｖ２゜■２−■１．ｖ２−ｖ０．Ｖ２−
■１トソノトキどｑ ノ基ａｉａ度との関係をあらかじ
め較正しておくことにより■３．ｖ２．■１を測定する
ことにより基板温度を測定円ることができる。次には、
バイメタルの形成方法の１例を述べる。Therefore, V3-V2゜■2-■1. v2-v0. V2-
■1 By calibrating the relationship with the degree of aia in advance, ■3. v2. (1) By measuring 1, the substrate temperature can be measured. Next,
An example of a method for forming a bimetal will be described.
を用いて（ｂ１図の如くパターン１１を作る。次いでメ
タルマスクを（ｃ）図の１２の如くあてる。次いで真空
中で蒸着法、又はスパッタリング法によりＮ、に次いで
Ｃｕ、又はＮｉ−Ｍｎ−Ｆｅ合金についでＮ、−Ｆｅの
合金等を４，５の如く付着しくｄ１図のバイメタル４５
を形成する。（ｅ）ＥＶ＋はメタルマスクを除去した図
である。これをハクリ液、又はアセトン中に数分〜数十
分浸し、静かにレジストを溶解除去しくｆ）図の片持梁
状に露出したバイメタル４５を得る。(b1) to form a pattern 11 as shown in Figure (b1). Next, a metal mask is applied as shown in Figure (c) as shown in Figure 12.Next, N, then Cu, or Ni-Mn-Fe is deposited by vapor deposition or sputtering in a vacuum. Next to the alloy, attach N, -Fe alloys, etc. as shown in 4 and 5 to form bimetal 45 in the d1 diagram.
form. (e) EV+ is a diagram with the metal mask removed. This is immersed in a peeling solution or acetone for several minutes to several tens of minutes to gently dissolve and remove the resist, thereby obtaining the bimetal 45 exposed in the shape of a cantilever as shown in the figure.
尤も、上記以外の縦知の通常の処理９例えば食刻法を利
用する方法でも９本発明に用いるバイメタルの作成は可
能である。Of course, it is also possible to produce the bimetal used in the present invention using conventional processes other than those described above, such as etching.
本発明はバイメタルを如何に作成するかに、限定される
ものではない。バイメタルの形状についても同様である
。かつまた、バイメタルの構造もこれを二層に限定する
ものではない。三層以上にすることによって測定精度、
耐久性を向上させることが可能である。The present invention is not limited to how the bimetal is made. The same applies to the shape of the bimetal. Furthermore, the bimetal structure is not limited to two layers. Measurement accuracy can be improved by using three or more layers.
It is possible to improve durability.
さて９本発明の方法は以上に説明した通りであって、基
板温度を無接触で測定することを可能にし。Now, the method of the present invention is as described above, and makes it possible to measure the substrate temperature without contact.
■基板に高電圧を印加してもよい。■High voltage may be applied to the substrate.
■移動中の基板温度も測定できる。■Can also measure substrate temperature during movement.
■多量に形成できるので、１ケのみ較正すればよい。■Since a large amount can be formed, only one need be calibrated.
■熱容量が小さい為、はぼ表面温度の測定となる。■Because the heat capacity is small, the surface temperature is measured.
゛ １、
■較正を厳密にすることにより精密な温度の測定が可能
である。゛ 1. ① Precise temperature measurement is possible by strict calibration.
などのすぐれた長所をもつものである。本発明によって
半導体デバイス等の品質９歩溜りは太い設備した基板の
実施例の斜視図。It has excellent advantages such as: FIG. 1 is a perspective view of an embodiment of a substrate equipped with a high-quality semiconductor device according to the present invention.
第２図は本発明の方法を実施例で説明する図。FIG. 2 is a diagram illustrating the method of the present invention using an example.
第３図はバイメタルの作成方法を例示する１゜１：基板 ４５：バイメタル ８：位置にセンサー子 ９：光路変換器 特許出願人 日電アネルバ株式会社 ＦＩＧ、２ ＦＩＧ、３Figure 3 shows an example of how to create a bimetal. 1゜1: Substrate 45: Bimetal 8: Sensor element in position 9: Optical path converter Patent applicant: Nichiden Anelva Co., Ltd. FIG.2 FIG.3
Claims (1)
を用いて多層構造のバイメタルを形成し。 該バイメタルの温度による屈曲面上に該基板外から光を
投じ、該投光の反射光の変位を検出することにより該基
板の温度を測定することを特徴とする基板温度測定方法
。[Claims] At a suitable location on a substrate for manufacturing semiconductor devices, etc. A multilayer bimetal structure is formed using two or more metal materials each having a different coefficient of linear expansion. A method for measuring the temperature of a substrate, characterized in that the temperature of the substrate is measured by projecting light from outside the substrate onto a temperature-curved surface of the bimetal and detecting the displacement of the reflected light of the projected light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13662683A JPS6027827A (en) | 1983-07-26 | 1983-07-26 | Substrate-temperature measuring method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13662683A JPS6027827A (en) | 1983-07-26 | 1983-07-26 | Substrate-temperature measuring method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6027827A true JPS6027827A (en) | 1985-02-12 |
Family
ID=15179698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13662683A Pending JPS6027827A (en) | 1983-07-26 | 1983-07-26 | Substrate-temperature measuring method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6027827A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0235627A2 (en) * | 1986-03-06 | 1987-09-09 | Robert Bosch Gmbh | Device for touch-free temperature measurement |
-
1983
- 1983-07-26 JP JP13662683A patent/JPS6027827A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0235627A2 (en) * | 1986-03-06 | 1987-09-09 | Robert Bosch Gmbh | Device for touch-free temperature measurement |
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