JPS60260392A - 透光性導電膜の光加工方法 - Google Patents

透光性導電膜の光加工方法

Info

Publication number
JPS60260392A
JPS60260392A JP59117538A JP11753884A JPS60260392A JP S60260392 A JPS60260392 A JP S60260392A JP 59117538 A JP59117538 A JP 59117538A JP 11753884 A JP11753884 A JP 11753884A JP S60260392 A JPS60260392 A JP S60260392A
Authority
JP
Japan
Prior art keywords
conductive film
transparent conductive
optical processing
processing method
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59117538A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0356556B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
舜平 山崎
Susumu Nagayama
永山　進
Kenji Ito
健二 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP59117538A priority Critical patent/JPS60260392A/ja
Priority to US06/740,764 priority patent/US4713518A/en
Publication of JPS60260392A publication Critical patent/JPS60260392A/ja
Priority to US07/298,263 priority patent/US4874920A/en
Priority to US07/333,912 priority patent/US4970368A/en
Priority to US07/333,911 priority patent/US4970369A/en
Publication of JPH0356556B2 publication Critical patent/JPH0356556B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Liquid Crystal (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
JP59117538A 1984-06-08 1984-06-08 透光性導電膜の光加工方法 Granted JPS60260392A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59117538A JPS60260392A (ja) 1984-06-08 1984-06-08 透光性導電膜の光加工方法
US06/740,764 US4713518A (en) 1984-06-08 1985-06-03 Electronic device manufacturing methods
US07/298,263 US4874920A (en) 1984-06-08 1989-01-13 Electronic device manufacturing methods
US07/333,912 US4970368A (en) 1984-06-08 1989-04-06 Laser scribing method
US07/333,911 US4970369A (en) 1984-06-08 1989-04-06 Electronic device manufacturing methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59117538A JPS60260392A (ja) 1984-06-08 1984-06-08 透光性導電膜の光加工方法

Publications (2)

Publication Number Publication Date
JPS60260392A true JPS60260392A (ja) 1985-12-23
JPH0356556B2 JPH0356556B2 (enrdf_load_stackoverflow) 1991-08-28

Family

ID=14714272

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59117538A Granted JPS60260392A (ja) 1984-06-08 1984-06-08 透光性導電膜の光加工方法

Country Status (1)

Country Link
JP (1) JPS60260392A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5935344A (en) * 1995-10-26 1999-08-10 Sanyo Electric Co., Ltd. Photovoltaic element and manufacturing method thereof
US7494834B2 (en) 2005-06-16 2009-02-24 Asulab S.A. Method of manufacturing a transparent element including transparent electrodes
CN104182078A (zh) * 2013-05-21 2014-12-03 苹果公司 塑料触摸传感器处理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113141A (en) * 1979-02-24 1980-09-01 Fujitsu Ltd Photo recording medium
JPS5670984A (en) * 1979-11-15 1981-06-13 Toppan Printing Co Ltd Laser engraving method and mask sheet used therefor
JPS5672445A (en) * 1979-11-19 1981-06-16 Chiyou Lsi Gijutsu Kenkyu Kumiai Production of photomask
JPS5763291A (en) * 1980-10-03 1982-04-16 Tdk Corp Optical recording medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113141A (en) * 1979-02-24 1980-09-01 Fujitsu Ltd Photo recording medium
JPS5670984A (en) * 1979-11-15 1981-06-13 Toppan Printing Co Ltd Laser engraving method and mask sheet used therefor
JPS5672445A (en) * 1979-11-19 1981-06-16 Chiyou Lsi Gijutsu Kenkyu Kumiai Production of photomask
JPS5763291A (en) * 1980-10-03 1982-04-16 Tdk Corp Optical recording medium

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5935344A (en) * 1995-10-26 1999-08-10 Sanyo Electric Co., Ltd. Photovoltaic element and manufacturing method thereof
US7494834B2 (en) 2005-06-16 2009-02-24 Asulab S.A. Method of manufacturing a transparent element including transparent electrodes
CN104182078A (zh) * 2013-05-21 2014-12-03 苹果公司 塑料触摸传感器处理方法
CN104182078B (zh) * 2013-05-21 2018-05-08 苹果公司 触摸传感器面板及其制造方法

Also Published As

Publication number Publication date
JPH0356556B2 (enrdf_load_stackoverflow) 1991-08-28

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term