JPS60257516A - Manufacture of amorphous silicon semiconductor thin film - Google Patents

Manufacture of amorphous silicon semiconductor thin film

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Publication number
JPS60257516A
JPS60257516A JP11518384A JP11518384A JPS60257516A JP S60257516 A JPS60257516 A JP S60257516A JP 11518384 A JP11518384 A JP 11518384A JP 11518384 A JP11518384 A JP 11518384A JP S60257516 A JPS60257516 A JP S60257516A
Authority
JP
Japan
Prior art keywords
emission intensity
film
plasma
sih
semiconductor thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11518384A
Other languages
Japanese (ja)
Other versions
JPH0740551B2 (en
Inventor
Kenji Yamamoto
憲治 山本
Takehisa Nakayama
中山　威久
Yoshihisa Owada
善久 太和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
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Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP59115183A priority Critical patent/JPH0740551B2/en
Publication of JPS60257516A publication Critical patent/JPS60257516A/en
Publication of JPH0740551B2 publication Critical patent/JPH0740551B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To establish speedily and readily conditions for high-speed formation of an a-Si semiconductor thin film, by measuring the SiH emission intensity in a plasma. CONSTITUTION:First, no film formation is carried out, and conditions in which the SiH emission intensity reaches the maximum are set by varying the RF power, the reaction chamber pressure and the overall flow rate under the condition that a material gas has a constant silicon compound content. When such conditions are set, the speed at which an a-Si semiconductor thin film is formed becomes maximum. Therefore, it is possible to establish high-speed film forming conditions simply by monitoring the SiH emission intensity in the plasma without actually forming a film. The SiH emission intensity can be measured simply by examining the emission intensity at 4,100-4,200Angstrom by means of an optical fiber 5 attached to a glass window 3 provided in a reaction chamber 8, a polychrometer 4 and an OMA6.

Description

【発明の詳細な説明】 本発明は、プラズマＣＶＤ法によりアモルファスシリコ
ン（以下、ａ−Ｓｉという）系半導体薄膜（　ａ−Ｓｉ
Ｃ半導体薄膜、ａ−ＳｉＮ半導体薄膜など）を製造する
にあたり、プラズマ中のＳｉＨ発光強度を測定すること
により、ａ−Ｓ　ｉ系半導体薄膜の高速製膜条件を短時
間かつ容易に確立する方法および該方法により確立され
た所定の条件下においてａ−Ｓ　を系半導体薄膜を製造
する方法に関する。Detailed Description of the Invention The present invention provides an amorphous silicon (hereinafter referred to as a-Si) based semiconductor thin film (a-Si
A method for easily establishing high-speed deposition conditions for a-Si semiconductor thin films in a short time by measuring the SiH emission intensity in plasma when manufacturing a-SiN semiconductor thin films, etc.) The present invention relates to a method for producing a-S semiconductor thin films under predetermined conditions established by the method.

［従来技術］ 従来、ａ−Ｓ　ｉ系半導体薄膜を製造するための条件は
、反応室圧力、ＲＦバワー、ガス分率、合計ガス流量な
どの条件を種々変更して製膜し、その膜厚を測定し、膜
厚と製造条件との関係から最適条件をめている。それゆ
え製膜条件を確立するためには、非常な労力および時間
が必要であるとともに、確立された製膜条件下において
製膜するばあいでも、製膜開始直後などにおいては、製
膜条件が一定になっていないために、所望のａ−Ｓｉ系
半導体ｉ１１１をうろことができないばあいがあるなど
の欠点を有している。[Prior art] Conventionally, the conditions for producing a-Si semiconductor thin films were to vary the reaction chamber pressure, RF power, gas fraction, total gas flow rate, etc. The optimum conditions are determined based on the relationship between film thickness and manufacturing conditions. Therefore, establishing film forming conditions requires a great deal of effort and time, and even when forming films under established film forming conditions, the film forming conditions may not be correct immediately after starting film forming. Since it is not constant, it has a drawback that it may not be able to reach the desired a-Si semiconductor i111.

［発明の概要］ 本発明は前記のごとき実情に鑑み、ａ−Ｓｉ系半導体薄
膜の高速製膜条件を短時間かつ容易に確立する方法およ
び該方法により確立された条件下においてａ−Ｓ　ｉ系
半導体薄膜を製造する方法を確立するためになされたも
のである。[Summary of the Invention] In view of the above-mentioned circumstances, the present invention provides a method for easily establishing high-speed film forming conditions for a-Si semiconductor thin films in a short time and under the conditions established by the method. This was done to establish a method for manufacturing semiconductor thin films.

すなわち本発明は、プラズマＣＶＤ法によりシリコン化
合物を含有するガスからａ−Ｓ　ｉ系半導体薄膜を製造
するにあたり、プラズマ中のＳｉＨ発光強度を測定する
ことにより、ａ−Ｓ　ｉ系半導体薄膜の高速製膜条件を
短時間かつ容易に確立する方法およびプラズマＣＶＤ法
によりシリコン化合物を含有するガスからａ−Ｓ　ｉ系
半導体薄膜を製造するにあたり、プラズマ中のＳｉｆｔ
発光強度の最大値［ＳＩＨ］，の９０％以上のＳｉ８強
度にて製膜することを特徴とするａ−Ｓｉ系半導体薄膜
の製法に関する。That is, the present invention enables high-speed production of a-Si based semiconductor thin films by measuring the SiH emission intensity in plasma when producing a-Si based semiconductor thin films from a gas containing a silicon compound by plasma CVD method. When manufacturing a-Si semiconductor thin films from gases containing silicon compounds using a method that easily establishes film conditions in a short time and plasma CVD method, Sift in plasma is
The present invention relates to a method for manufacturing an a-Si semiconductor thin film, characterized in that the film is formed at an Si8 intensity of 90% or more of the maximum emission intensity [SIH].

［発明の実施態様］ 本発明に用いるシリコン化合物を含有するガスとは、Ｓ
ｉＨ，、Ｓｉ２　１６　、ＳｉＨ（ＣＩｔ３　）　３、
Ｓｉ（ＣＨ３　）　４、Ｓｉ（Ｃｈ　）　２　Ｈ２や３
ｉ（ＣＨ３　）　３ＣＩなどのハロゲン化シラン類など
のように、ガス状態で存在するシリコン化合物単独また
はこれらの混合物あるいはこれらシリコン化合物単独ま
たはそれらの混合物とＨ２、ＣＨ４、Ｃ２Ｈ４、ＣＨ２
　＝　ＣＨＣＨ３、Ｃ２）１２、ＣＨ２　＝ＣＨ−ＣＨ
　＝ＣＨ２、Ｎ２　、ＮＨ３、０２　、ＮＦ３、Ｎ２０
前記炭化水素のハロゲン誘導体などとの混合ガスのこと
である。[Embodiments of the invention] The gas containing a silicon compound used in the present invention is S
iH,, Si2 16 , SiH(CIt3) 3,
Si(CH3) 4, Si(Ch)2 H2 and 3
i(CH3) A silicon compound existing in a gas state or a mixture thereof such as halogenated silanes such as 3CI, or a silicon compound alone or a mixture thereof and H2, CH4, C2H4, CH2
=CHCH3,C2)12,CH2=CH-CH
=CH2, N2, NH3,02, NF3, N20
This refers to a gas mixture of the above-mentioned hydrocarbons and halogen derivatives.

前記のごときシリコン化合物を含有するガスが、プラズ
マＣＶＤ法によりプラズマ分解され、基板上に堆積せし
められ、ａ−Ｓｉ系半導体薄膜が形成される。A gas containing the silicon compound as described above is plasma-decomposed by plasma CVD and deposited on a substrate to form an a-Si semiconductor thin film.

本発明においては、ａ−Ｓｉ系半導体薄膜を形成するに
あたり、まず製膜を行なわずに、シリコン化合物を含有
するガス中のシリコン化合物のガス分率が一定の条件に
て、ＲＦバワー、反応室圧力および全流量を変化させ、
ＳｉＨ発光強度が最大になる条件を設定する。In the present invention, when forming an a-Si semiconductor thin film, first, without performing film formation, an RF power is applied to the reaction chamber under conditions where the gas fraction of the silicon compound in the gas containing the silicon compound is constant. Varying the pressure and total flow rate,
Set conditions for the maximum SiH emission intensity.

このようにしてＳｉＨ発光強度が最大になる条件を設定
すると、ａ−Ｓｉ系半導体薄膜を形成する速度が最大に
なることが、本発明に関する検討の結果から明確になっ
ている。それゆえ本発明の方法を用いると、実際に製膜
をすることなく、プラズマ中のＳｉＨ発光強度をモニタ
リングすることのみで高速製膜条件を確立することがで
きる。It has become clear from the results of studies related to the present invention that by setting conditions in which the SiH emission intensity is maximized in this way, the speed of forming an a-Si semiconductor thin film is maximized. Therefore, when the method of the present invention is used, high-speed film forming conditions can be established only by monitoring the SiH emission intensity in plasma without actually forming a film.

なおＳｉＨ発光強度は、第１図に示すように、反応室（
８）に設けられたガラス窓（３）に取り付けた光ファイ
バー（５）、ポリクロメーター（４）、ＯＨＡ（Ｏｐｔ
ｉｃａｌ　Ｈａｌｔｉｃｈａｎｎｅｌ　ａｎａｌｉｚｅ
ｒ）　（６）により４１００〜４２００への発光強度を
調べることにより簡単に測定できる。Note that the SiH emission intensity is measured in the reaction chamber (as shown in Fig. 1).
8) Optical fiber (5) attached to the glass window (3), polychromator (4), OHA (Opt
ical Haltichannel analize
r) It can be easily measured by examining the emission intensity from 4100 to 4200 according to (6).

ガス分率の異なる条件では、上記ＲＦパワー、反応室圧
力は同じで、全流量が上記５ｉｔ（発光強度最大の条件
におけるレジデンス・タイム（ｒｅｓｉｄｅｎｃｅ　ｔ
ｉｌｅ）ｒと一致するように全流量を設定すると、他の
ガス分率に対してもｓｇ堆積速度が最大になる条件を設
定することができる。Under conditions with different gas fractions, the above RF power and reaction chamber pressure are the same, and the total flow rate is 5 it (residence time under the condition of maximum emission intensity).
By setting the total flow rate to match ile)r, it is possible to set the conditions that maximize the sg deposition rate for other gas fractions as well.

つまりＳｉＨ発光強度最大のレジデンス　タイムは、ガ
ス分率に依存せず一定である。In other words, the residence time at which the SiH emission intensity is maximum is constant regardless of the gas fraction.

なおレジデンス　タイムτは、実験値を用いて下式より
められる。Note that the residence time τ can be calculated from the following formula using experimental values.

Ｖ　Ｐ−Ｖ　Ｐ−■ （式中、■は反応室体積、Ｓは排気速度、Ｐは反応室圧
力、Ｑは流量である。）プラズマ分解などにより分子数
に変化がおこらないばあい、ｖ　Ｐ■ −１−一−：＝：＋＋＋ ｑ が成立する。到達圧力ＰｕよりＰが充分大きいばＦ　あ
いには、 １′・　Ｓ Ｐ　＝　Ｐｉ　ｅｘｐ（−−ｔ　） （式中、Ｐｌはｔ−ｏでの圧力、ｔは時間である）なる
関係が成立し、したがって ｌｎ　Ｐ　＝：　−−ｔ　十〇 ■ （式中、Ｃは定数である）となり、これに実験からめた
Ｐ、ｔの値を代入して、縦軸をＩｎｐ　。V P-V P-■ (In the formula, ■ is the reaction chamber volume, S is the pumping speed, P is the reaction chamber pressure, and Q is the flow rate.) If the number of molecules does not change due to plasma decomposition etc., v P■ -1-1-:=:+++ q holds true. If P is sufficiently larger than the ultimate pressure Pu, then the following relationship holds true: 1' S P = Pi exp (--t) (In the formula, Pl is the pressure at t-o, and t is time) Therefore, ln P =: -t 10■ (in the formula, C is a constant), and by substituting the experimentally determined values of P and t into this, the vertical axis is Inp.

横軸をｔとしてプロットしたときの傾きからτがめられ
る。τ can be determined from the slope when plotted with t as the horizontal axis.

たとえばＳｉ　Ｈ４のガス分率が小さく、ＳｉＨ発光強
度がめにくいばあい、８ｉ　Ｈ４のガス分率の多きな条
件にて反応室圧力、ＲＦパワー、全流量をＳＩＨ発光強
度が最大になるように条件を設定し、所定のガス分率に
したばあいにレジデンスタイムが一致するように全流量
を設定すると、ＳｉＨ発光強度が最大になるように、す
なわち薄膜堆積速度が最大になるように設定することが
できる。For example, if the SiH4 gas fraction is small and the SiH emission intensity is low, the reaction chamber pressure, RF power, and total flow rate should be adjusted to maximize the SIH emission intensity under conditions where the 8iH4 gas fraction is large. If the total flow rate is set so that the residence time matches when a predetermined gas fraction is set, the SiH emission intensity is maximized, that is, the thin film deposition rate is maximized. Can be done.

つぎに本発明の方法を第１図にもとづき説明する。Next, the method of the present invention will be explained based on FIG.

第１図に示す反応室（８）には、ＲＦ％ｉ極（刀および
ヒーター（２が通常のように設置されており、ＲＦ電極
（７）にはＲＦ電源（１）が接続されており、また原料
ガス導入ライン（Ａ）が設けられている。一方、反応室
（８）には排気ライン（Ｂ）　、Ｓ開発光強度をモニタ
リングするためのガラス窓（３）が設けられており、該
ガラス窓（３）にはモニタリング用の光ファイバー（５
）を介してポリクロメーター（４）およびＯＨＡ　（６
）が取り付けられている。In the reaction chamber (8) shown in Figure 1, an RF%i electrode (sword and a heater (2) are installed as usual, and an RF power source (1) is connected to the RF electrode (7). In addition, a raw material gas introduction line (A) is provided.On the other hand, the reaction chamber (8) is provided with an exhaust line (B) and a glass window (3) for monitoring the S development light intensity. The glass window (3) is equipped with an optical fiber (5) for monitoring.
) via polychromator (4) and OHA (6
) is attached.

このような装置を用いて、基板を設置しないで、所定の
ガス分率でプラズマ放電をおこし、ＳｉＨ発光強度（４
１３〜４２８ｎｌの発光強度）が最大になるように、Ｒ
Ｆパワー、反応室圧力および全流量を変化させ、薄膜堆
積条件を設定することにより、短時間かつ容易に、非接
触的な方法で高速製膜条件を設定することができる。Using such a device, a plasma discharge is generated at a predetermined gas fraction without installing a substrate, and the SiH emission intensity (4
13 to 428 nl) to maximize the R
By changing the F power, the reaction chamber pressure, and the total flow rate and setting the thin film deposition conditions, high-speed film forming conditions can be set easily in a short time and in a non-contact manner.

つぎに前記方法により、プラズマ中のＳｉＨ発光強度を
　［８１８］Ｈの９０％以上の値に設定し、このように
設定したグロー放電分解条件下で製膜するａ−３ｉ系半
導体薄膜の製法について説明する。Next, we will discuss a method for manufacturing an a-3i semiconductor thin film by setting the SiH emission intensity in the plasma to a value of 90% or more of [818]H using the above method, and forming the film under the glow discharge decomposition conditions set in this way. explain.

ａ−３ｉ系半導体薄膜の形成を、プラズマ中のＳｉＨ発
光強度が　［ＳｉＨ］Ｈの９０％以上の条件で行なうと
、堆積速度が速くなる。とくにＳｉＨ発光強度が最大と
なる条件で製膜すると、堆積速度が最大となる。When the a-3i semiconductor thin film is formed under conditions where the SiH emission intensity in the plasma is 90% or more of [SiH]H, the deposition rate becomes faster. In particular, when the film is formed under conditions where the SiH emission intensity is maximized, the deposition rate is maximized.

前記のようにプラズマ中のＳｉＨ発光強度測定を、ａ−
３ｉ系半導体１膜の製造条件の設定に用いるだけでなく
、製膜中もモニタリングをつづけると、放電状態を観察
することができ、製膜条件を製膜中に変更させながら製
膜することもでき、堆積速度の最適化を自由に行なうと
いうようなことも可能となる。As mentioned above, the SiH emission intensity measurement in plasma was carried out using a-
In addition to being used to set the manufacturing conditions for a single 3i semiconductor film, if you continue monitoring during film formation, you can observe the discharge state, and you can also change the film forming conditions during film formation. It also becomes possible to freely optimize the deposition rate.

つぎに本発明の方法および製法を実施例にもとづき説明
する。Next, the method and manufacturing method of the present invention will be explained based on Examples.

実施例１ ＳｉＨ４（１−Ｘ）　＋２０２”（Ｘ）なる混合ガスを
用いて、ＲＦパワー３０−１反応室圧力１．５Ｔｏｒｒ
なる条件で全流量を１０〜４００ｓｅｃｍの範囲で変化
させ、ＳｉＨ発光強度と薄膜堆積速度との関係を測定し
た。それらの結果を第２図に示す。Example 1 Using a mixed gas of SiH4(1-X) +202''(X), RF power was 30-1 and reaction chamber pressure was 1.5 Torr.
The total flow rate was varied in the range of 10 to 400 seconds under the following conditions, and the relationship between the SiH emission intensity and the thin film deposition rate was measured. The results are shown in FIG.

なおＸは０１０．３および０．６５のそれぞれについて
測定した。ｘ＝Ｏのばあいにはａ−８ｔ：Ｈ。Note that X was measured at 010.3 and 0.65, respectively. If x=O, a-8t:H.

ｘ＝０．３のばあいにはａ−８ｉＣｏ４：Ｈ，ｘ＝　０
．６５のばあいにはａ−３ｉＣ：Ｈが形成された。When x=0.3, a-8iCo4:H, x=0
．． In the case of 65, a-3iC:H was formed.

０．４ 実施例２ ＳｉＨ４、Ｃ２Ｈ４混合ガスを用いて、ＲＦパワー３０
Ｗ、金沢ｆｊｋ　８０ｓｃｃＩ１１なる条件で、反応室
圧力を第１表のように変化させて、ＳｉＨ１発光強度と
薄膜堆積速度との関係を測定した。それらの結果を第１
表に示す。0.4 Example 2 Using SiH4, C2H4 mixed gas, RF power 30
The relationship between the SiH1 emission intensity and the thin film deposition rate was measured under the following conditions: W, Kanazawa fjk 80sccI11, and the reaction chamber pressure was varied as shown in Table 1. those results first
Shown in the table.

第　１　表 実施例３ ＳｉＨ４、Ｃ２Ｈ４混合ガスを用いて、反応室圧力１．
５Ｔｏｒｒ、全流量８０ｓｅｃ＋＋なる条件で、ＲＦパ
ワーを第２表のように変化させて、ＳｉＨ発光強度と薄
膜堆積速度との関係を測定した。Table 1 Example 3 Using a mixed gas of SiH4 and C2H4, the reaction chamber pressure was 1.
The relationship between the SiH emission intensity and the thin film deposition rate was measured under conditions of 5 Torr and a total flow rate of 80 sec++ while changing the RF power as shown in Table 2.

それらの結果を第２表に示す。The results are shown in Table 2.

第　２　表 実施例１〜３の結果から、ＳｉＨ発光強度が大きくなる
と薄膜堆積速度が大きくなることがわかる。From the results of Examples 1 to 3 in Table 2, it can be seen that as the SiH emission intensity increases, the thin film deposition rate increases.

実施例４ ＳｉＨａ、Ｃ２Ｈ４混合ガス全流量を２０〜４００ｓｅ
ｃｍの範囲で変化させ、先程の圧力と時間との関係から
τをめ、そのときの発光強度との関係をめた。それらの
結果を第３図に示す。Example 4 SiHa, C2H4 mixed gas total flow rate from 20 to 400 se
The temperature was varied within a range of cm, τ was determined from the relationship between pressure and time, and the relationship with the luminescence intensity at that time was determined. The results are shown in FIG.

第３図からＳｉＨ４のガス分率に関係なく、レジデンス
中タイムτ＝約４．５ＳｅＣにてＳｉＨの発光強度が最
大となることがわかる。つまり異なるガス分率において
もレジデンス・タイムで堆積速度最大となる条件が設定
できることがわかる。It can be seen from FIG. 3 that the emission intensity of SiH reaches its maximum at the residence time τ=approximately 4.5 SeC, regardless of the gas fraction of SiH4. In other words, it can be seen that conditions can be set to maximize the deposition rate at the residence time even at different gas fractions.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の方法に関する説明図、第２図は実施例
１において、全流量をパラメータとして変化させたばあ
いのＳｉＨ発光強度とｍ＊堆積速度との関係を示すグラ
フ、第３図は実施例４において、ガスフラクションｘ＝
Ｏ１０，３，０，６５，０，１６，０，８６のばあいの
レジデンス・タイムτとＳｉＨ発光強度との関係を示す
グラフである。 特許出願人　鐘淵化学工業株式会社 神　Ｃ八 ２２図 Δ　：　χ＝０．６５ ｘ　：　Ｘ＝０．３FIG. 1 is an explanatory diagram regarding the method of the present invention, FIG. 2 is a graph showing the relationship between SiH emission intensity and m* deposition rate when the total flow rate is changed as a parameter in Example 1, and FIG. In Example 4, gas fraction x=
It is a graph showing the relationship between residence time τ and SiH emission intensity in the case of O10, 3, 0, 65, 0, 16, 0, and 86. Patent applicant Kanekabuchi Chemical Industry Co., Ltd. Figure C822 Δ: χ=0.65 x: X=0.3

Claims (1)

【特許請求の範囲】 １　プラズマＣＶＤ法によりシリコン化合物を含有する
ガスからアモルファスシリコン系半導体薄膜を製造する
にあたり、プラズマ中のＳＩＨ発光強度を測定すること
により、アモルファスシリコン系半導体薄膜の高速製膜
条件を短時間かつ容易に確立する方法。 ２　シリコン化合物を含有するガスが、Ｓｉｚ　）１６
　、Ｓｊ　Ｈ４に炭化水素、そのハロゲン誘導体、アン
モニア、ＮＦ３、Ｎ２．０２１８０２の少なくとも１種
以上を含むガスである特許請求の範囲第１項記載の方法
。 ３　プラズマＣＶＤ法によりシリコン化合物を含有する
ガスからアモルファスシリコン系半導体薄膜を製造する
にあたり、プラズマ中のＳｉＨ発光強度の最大値［Ｓｉ
Ｈ］＋の９０％以上のＳｉＨ発光強度にて製膜すること
を特徴とすゝるアモルファスシリコン系半導体薄膜の製
法。 ４　プラズマ中のＳｉＨ発光強度をあらかじめ［ＳｒＨ
］Ｈの９０％以上に調整したのち製膜する特許請求の範
囲第３項記載の製法。 ５　プラズマ中のＳｉＨ発光強度が最大となる条件下で
製膜する特許請求の範囲第３項または第４項記載の製法
。 ６　プラズマ中の５ｉｆｔ発光強度をモニタリングしな
がら製膜する特許請求の範囲第３項、第４項または第５
項記載の製法。 ７　プラズマ中のＳｉＨ発光強度を、モニタリングしな
がら、かつかえながら製膜する特許請求の範囲第３項、
第４項、第５項または第６項記載の製法。 ８　シリコン化合物を含有するガスが、Ｓｉ２Ｈ６、Ｓ
ｉ　Ｈ４に炭化水素、そのハロゲン誘導体、アンモニア
、ＮＦ３、Ｎ２．０２、Ｎ２０の少なくとも１種以上を
含むガスである特許請求の範囲第３項、第４項、第５項
、第６項または第７項記載の製法。[Scope of Claims] 1. In manufacturing an amorphous silicon semiconductor thin film from a gas containing a silicon compound by plasma CVD method, high-speed deposition conditions for the amorphous silicon semiconductor thin film are determined by measuring the SIH emission intensity in the plasma. How to quickly and easily establish 2 The gas containing a silicon compound is Siz)16
, Sj H4 is a gas containing at least one of hydrocarbons, halogen derivatives thereof, ammonia, NF3, and N2.021802. 3 When producing an amorphous silicon-based semiconductor thin film from a gas containing a silicon compound by plasma CVD method, the maximum value of SiH emission intensity in plasma [Si
A method for producing an amorphous silicon-based semiconductor thin film, characterized in that the film is produced at an SiH emission intensity of 90% or more of H]+. 4 The SiH emission intensity in the plasma was determined in advance by [SrH
] The manufacturing method according to claim 3, wherein the film is formed after adjusting H to 90% or more. 5. The manufacturing method according to claim 3 or 4, wherein the film is formed under conditions where the SiH emission intensity in plasma is maximized. 6 Claims 3, 4, or 5 in which the film is formed while monitoring the 5ift emission intensity in plasma.
Manufacturing method described in section. 7 Claim 3, in which the film is formed while monitoring and holding the SiH emission intensity in the plasma;
The manufacturing method according to item 4, item 5, or item 6. 8 The gas containing silicon compounds is Si2H6, S
i H4 is a gas containing at least one of hydrocarbons, halogen derivatives thereof, ammonia, NF3, N2.02, and N20 in claims 3, 4, 5, 6, or The manufacturing method described in Section 7.
JP59115183A 1984-06-04 1984-06-04 Amorphous silicon semiconductor thin film manufacturing method Expired - Fee Related JPH0740551B2 (en)

Priority Applications (1)

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JPS60257516A true JPS60257516A (en) 1985-12-19
JPH0740551B2 JPH0740551B2 (en) 1995-05-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010100782A1 (en) * 2009-03-06 2010-09-10 三菱重工業株式会社 Method of producing photoelectric conversion device, and film-forming apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182217A (en) * 1982-04-19 1983-10-25 Oki Electric Ind Co Ltd Thin film forming method
JPS5994810A (en) * 1982-11-22 1984-05-31 Agency Of Ind Science & Technol Production of amorphous silicon film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182217A (en) * 1982-04-19 1983-10-25 Oki Electric Ind Co Ltd Thin film forming method
JPS5994810A (en) * 1982-11-22 1984-05-31 Agency Of Ind Science & Technol Production of amorphous silicon film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010100782A1 (en) * 2009-03-06 2010-09-10 三菱重工業株式会社 Method of producing photoelectric conversion device, and film-forming apparatus
JP2010212279A (en) * 2009-03-06 2010-09-24 Mitsubishi Heavy Ind Ltd Method for manufacturing photoelectric conversion device and film forming device
US8394709B2 (en) 2009-03-06 2013-03-12 Mitsubishi Heavy Industries, Ltd. Process for producing photovoltaic device and deposition apparatus

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