JPS60254043A - Developing agent for positive type photosensitive material - Google Patents

Developing agent for positive type photosensitive material

Info

Publication number
JPS60254043A
JPS60254043A JP10854384A JP10854384A JPS60254043A JP S60254043 A JPS60254043 A JP S60254043A JP 10854384 A JP10854384 A JP 10854384A JP 10854384 A JP10854384 A JP 10854384A JP S60254043 A JPS60254043 A JP S60254043A
Authority
JP
Japan
Prior art keywords
developer
ammonium hydroxide
time
concn
lapse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10854384A
Other languages
Japanese (ja)
Inventor
Yasuo Ito
泰男 伊藤
Takayuki Nakagawa
孝之 中川
Hiroaki Matsuoka
宏明 松岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
YOTSUKAICHI GOSEI KK
Original Assignee
YOTSUKAICHI GOSEI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by YOTSUKAICHI GOSEI KK filed Critical YOTSUKAICHI GOSEI KK
Priority to JP10854384A priority Critical patent/JPS60254043A/en
Publication of JPS60254043A publication Critical patent/JPS60254043A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/322Aqueous alkaline compositions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)

Abstract

PURPOSE:To facilitate formation of a prescribed shape positive image, to improve stability with lapse of time, and to reduce coloring due to lapse of time by using a specified quaterary ammonium hydroxide. CONSTITUTION:A positive type photosensitive resin is attached to a semiconductor, exposed to light through a mask, and the exposed layer is developed with a developing soln. contg. the quaternary ammonium hydroxide represented by the formula in which R<1>, R<2> are each 1-4C alkyl; and R<3>, R<4> are each 2, 3, or 4C alkylene, and when the carbon number of R<1>-R<4> exceeds 4, alkalinity drops and sufficient development effect cannot be attained. An ordinary concn. of the developing soln. is 0.5-20wt%, preferably, 1-15wt%. Said concn. needs to be >=0.5% from the point of development effect, and when >=20%, there is a danger of dissolving the unnexposed resist as well. Suitable development tims is changed in a wide range in accordance with the strength of the developer and the kinds of photosensitive materials actually used, and said time is usually in the range of one-several ten seconds.

Description

【発明の詳細な説明】 本発明は、ポジ型感光材料用現像剤に関する。[Detailed description of the invention] The present invention relates to a developer for positive photosensitive materials.

〔発明の目的〕[Purpose of the invention]

(産業上の利用分野) 本発明は、半導体装置の製造などにおいて、該半導体に
ポジ型感光性樹脂を被着し、マスクによって露光を施し
た後、露光したノーを現像するための現像剤を提供する
ものである。
(Industrial Application Field) The present invention relates to the manufacture of semiconductor devices, etc., in which a positive photosensitive resin is applied to the semiconductor, exposed to light using a mask, and then a developer is applied to develop the exposed material. This is what we provide.

(従来の技術) このような現像剤として従来、 (但し}!1,R2,R3,R4は一CH3 1 −C
2H5 P−C3H7 、 −C4Hg 、 −C2H
401{ 、 −C3f{60H y−C4HgOH。
(Prior art) As such a developer, (however, !1, R2, R3, R4 are -CH3 1 -C
2H5 P-C3H7, -C4Hg, -C2H
401{ , -C3f{60H y-C4HgOH.

一C2H40CH3およびーC2h40C2H5 から
選ばれた基で同種でも異種でもよい) で示さ、れる有懺アミンからなるポジ型の電子線、X線
、r線、α線などの放射線感応材料用現像剤が知られて
いる(特開昭52−143019号公報)。
A positive type developer for materials sensitive to radiation such as electron beams, It is known (Japanese Unexamined Patent Publication No. 143019/1983).

この現像剤としては、上記一般式のR1−R4がそれぞ
れ任意に上記アルキル基、ヒドロキシアルキル基、アル
コキシアルキル基であり得るので多数の種々の化合物が
存在する。
As this developer, a large number of different compounds exist since each of R1 to R4 in the above general formula can be any of the above alkyl groups, hydroxyalkyl groups, and alkoxyalkyl groups.

この中で、例えばテトラアルキルアンモニウムヒドロキ
シド(D−a)は、製法上アルカリ金属、ハロゲンを用
いるために製品中へNa.に等のアルカリ金如およびC
Z 、Br 等のハロゲン原子が混入し半導体の特性を
低下させる要因となる。
Among these, for example, tetraalkylammonium hydroxide (D-a) contains Na. Alkali metals such as and C
Halogen atoms such as Z 2 and Br 2 are mixed in and become a factor that deteriorates the characteristics of the semiconductor.

ti、ト+、+アルキルモノヒドロキシアルキルアンモ
ニウムヒドロキシド(D−b )は、経時安定性が悪く
、製造後′J−ぐに着色が始まり、−日後には色調がA
PRA300にもなる。着色はD−bが自己分解するた
めに生ずる現象でちゃ、不純物が生成して純度が低下し
易いことを示すものである。このように純度が低下し易
い化合物は現像剤として好ましくない。このD−bの分
解物としてトリアルキルアミンが挙げられる。トリアル
キルアミン、特にトリメチルアミンはアミン臭が賢く作
業環境上も好ましくない。また、このアミン臭は合成の
際にトリアルキルアミンを使用することにも起因してい
る。
Ti, +, +alkylmonohydroxyalkyl ammonium hydroxide (D-b) has poor stability over time, and after production it begins to become discolored, and after - days, the color tone changes to A.
It also becomes PRA300. Coloration is a phenomenon that occurs due to self-decomposition of D-b, which indicates that impurities are generated and purity is likely to decrease. Compounds whose purity tends to decrease as described above are not preferred as developers. A trialkylamine can be mentioned as a decomposition product of D-b. Trialkylamines, especially trimethylamine, have an amine odor and are not desirable in terms of the working environment. This amine odor is also due to the use of trialkylamine during synthesis.

トリメチルアミンは、悪臭防止法の悪臭物質の一つに指
定されており、系外への放出が禁止されているので、発
生を極力抑える必要がある。
Trimethylamine is designated as one of the malodorous substances under the Offensive Odor Prevention Act, and its release outside the system is prohibited, so it is necessary to suppress its generation as much as possible.

さらにまた、モノアルキルトリヒドロキシルアンモニウ
ムヒドロキシド(D−c)およびテトラアルコキシエチ
ルアンモニウムヒドロキシF(D−d)は、D−aやu
−bと比較して経時安定性があり、経口着色性が低いが
、D−cおよびD−dはpHが低いために現像液の濃度
を高くしなければならず、塘た熱による分解性が悪いの
で現像後の処理に問題がある。 □ 逆にD−aや1)−bVipHが高過ぎるために、現像
後の膜荒れが著しく精度の高い微細なパターンを得るこ
とがむずかしい。
Furthermore, monoalkyl trihydroxylammonium hydroxide (D-c) and tetraalkoxyethylammonium hydroxy F (D-d) are D-a and u
Compared to -b, D-c and D-b have better stability over time and less oral coloring, but D-c and D-d have lower pH, so the concentration of the developer must be higher, and they are more susceptible to decomposition due to heat. Since the image quality is poor, there are problems with post-development processing. □ On the other hand, since D-a and 1)-bVipH are too high, the film becomes rough after development, making it difficult to obtain a fine pattern with high precision.

(発明が解決しようとする問題点) 本発門者らは、以上に例示した如き欠点のない現像剤を
得るべく研究を重ねた結果、本発明を達成するに至った
(Problems to be Solved by the Invention) The inventors of the present invention have conducted repeated research in order to obtain a developer free of the drawbacks as exemplified above, and as a result, have achieved the present invention.

〔発明の構成〕[Structure of the invention]

(問題点を解決するための手段) すなわち本発明は、 (式中、R1,R2は炭素数1〜4のアルキル基、R3
、R4は炭素数2〜4のアルキレン基ヲ表わす。) で示される第4級アンモニウムヒドロキシドかうなるポ
ジ型感光材料用現像剤である。
(Means for solving the problems) That is, the present invention provides the following: (In the formula, R1 and R2 are alkyl groups having 1 to 4 carbon atoms, R3
, R4 represents an alkylene group having 2 to 4 carbon atoms. ) is a developer for positive photosensitive materials made of quaternary ammonium hydroxide.

(作用) 半導体にポジ型感光性樹脂を被着し、マスクによって露
光を施した後、露光した層を上記一般人で示される第4
級アンモニウムヒドロキシドからなる現像剤で現像する
(Function) After coating a semiconductor with a positive photosensitive resin and exposing it to light using a mask, the exposed layer is exposed to the fourth layer shown in the above-mentioned general public.
Developed with a developer consisting of grade ammonium hydroxide.

上記一般式のR−Rの炭素数が4よシ大きくなるとアル
カリ性が低下し、十分な現像作用が発揮されない。
When the number of carbon atoms in R-R in the above general formula is greater than 4, alkalinity decreases and sufficient developing action is not exhibited.

以下に上記一般式の化合物、すなわち不発り」の現像剤
を例示する。次式中E+iエナレン基、P(はプロピレ
ン基、Bはブチレン基金表わす。
Examples of compounds having the above general formula, that is, non-explosion developers are shown below. In the following formula, E+i represents an enalene group, P (represents a propylene group, and B represents a butylene group).

(Cf(3)(C2Hs )N(EOH)、(Jl(1
(D−5)、(c1■3)2N(POI()20H(J
J−6)、(Cti、3 )2 N(Fun)(POH
)OH(i)−7) 等が挙げられる。これらは単独ま
たは複数の絹合せで用いられる。
(Cf(3)(C2Hs)N(EOH),(Jl(1
(D-5), (c1■3)2N(POI()20H(J
J-6), (Cti, 3)2N(Fun)(POH
)OH(i)-7) and the like. These can be used singly or in combination with multiple silks.

本発明の現イ象剤、すなわち上記第4級アンモニウムヒ
ドロキシドは、例えば第2級アミン(R2NH)にアル
キレンオキシドを水の存在下で反応させる方法により製
造することができる。
The effecting agent of the present invention, ie, the above-mentioned quaternary ammonium hydroxide, can be produced, for example, by a method in which a secondary amine (R2NH) is reacted with an alkylene oxide in the presence of water.

溶液中の現像剤の濃度は、広い範囲で使用され、最適濃
度は現像剤が適用される具体的感光材料および所望の現
像時間のような特性に依存する。通常溶液中の現像剤の
濃度は、0.5〜20重量%、好ましくは1〜15重量
%である。現像効果の点で0.5%以上を要し、20チ
を超えると未露光のレジストも溶解する恐れがあろう 溶媒としては、水または親水性M機溶媒、例えばメタノ
ール、エタノール、ジオキサン等を用いることができる
The concentration of developer in solution can be used within a wide range, with the optimum concentration depending on characteristics such as the specific light-sensitive material to which the developer is applied and the desired development time. The concentration of developer in the solution is usually 0.5 to 20% by weight, preferably 1 to 15% by weight. Water or hydrophilic organic solvents such as methanol, ethanol, dioxane, etc. are used as solvents that require 0.5% or more in terms of development effect and may dissolve unexposed resist if the amount exceeds 20 cm. Can be used.

本発明の現像剤に関して適用される写真装素は、活性輻
射線の光源によって慣用の方法で映像露光する。
The photographic device adapted for use with the developer of the invention is imagewise exposed in a conventional manner by a source of actinic radiation.

滑車な光源としては、水銀ランプ、カーボンアークラン
プ、タングステンフィラメントランプ、蛍光灯、レーザ
ー光線、電子ビーム等が用いられる。
As a pulley light source, a mercury lamp, a carbon arc lamp, a tungsten filament lamp, a fluorescent lamp, a laser beam, an electron beam, etc. are used.

適当な現像時間は、現像剤の強度および具体的感光材料
の種類により広面j、囲に変化し、通常1〜数十秒の範
囲である。
The appropriate development time varies widely depending on the strength of the developer and the specific type of photosensitive material, and is usually in the range of 1 to several tens of seconds.

〔実施例〕〔Example〕

以下に本発明の現像剤の製造例を示す。 Examples of manufacturing the developer of the present invention are shown below.

(製造例) 5.000 tの反応器にジメチルアミン21wt%水
溶液3,000Kgを仕込み、攪拌下に温度を50〜8
0℃に保ちながら酸化エチレン1,233にダを3時間
かけて吹込みつつ反応させる。吹込み終了後同温度で3
0分間熟成させたのち、未反応のジメチルアミンをトッ
ピングで回収して4,200Krのジメチル(2−ヒド
ロキシエチル)アンモニウムヒドロキシド(D −1)
 50 wtチ水溶液を得た。
(Production example) 3,000 kg of a 21 wt% aqueous solution of dimethylamine was charged into a 5,000 t reactor, and the temperature was raised to 50 to 8 ml while stirring.
While maintaining the temperature at 0°C, ethylene oxide 1,233 was blown into ethylene oxide for 3 hours to react. 3 at the same temperature after blowing
After aging for 0 minutes, unreacted dimethylamine was recovered by topping and 4,200 Kr dimethyl (2-hydroxyethyl) ammonium hydroxide (D-1) was obtained.
A 50 wt aqueous solution was obtained.

次に実施例および比較例によって不発明を更に具体的に
説、明する。
Next, the invention will be explained and explained in more detail with reference to Examples and Comparative Examples.

(実施例および比較例) ポジ型フォトレジストをシリコンウェハーにスピン塗布
してレジスト膜厚1.5μのレジストフィルムを作った
。次いでプレベークを85℃で20分間行ない、水銀ラ
ンプで露光をして、23℃で1分間現像剤の水溶液に浸
漬し現像を行なった。現像剤の各濃度における被膜厚減
少率(%)を表−1(実施例)および表−2(比較例)
に示す。
(Examples and Comparative Examples) A positive photoresist was spin-coated onto a silicon wafer to produce a resist film having a resist film thickness of 1.5 μm. Next, the film was prebaked at 85° C. for 20 minutes, exposed to light using a mercury lamp, and developed by being immersed in an aqueous developer solution at 23° C. for 1 minute. Table 1 (Example) and Table 2 (Comparative Example) show the film thickness reduction rate (%) at each developer concentration.
Shown below.

なお、各現像剤の熱分解性について示差熱分析を行なっ
た結果を表−3に示す。
Table 3 shows the results of differential thermal analysis regarding the thermal decomposition properties of each developer.

゛また、各現像液(io%水溶液)の室温における経時
安定性(APH,A)を比較した結果を表−4に示す。
゛Also, Table 4 shows the results of comparing the temporal stability (APH, A) of each developer (io% aqueous solution) at room temperature.

さらに、各現像剤の1チ水溶液のpHを表−5に示す。Furthermore, Table 5 shows the pH of the 100% aqueous solution of each developer.

表−1(実施例) 表−2(比較例) (備考)D−イ:モノメチルトリ(2−ヒドロキシエチ
ル)アンモニウムヒドロキシド D−ロ:テトラメチルアンモニウムヒドロキシドD−ハ
二トリメチルモノヒドロキシエナルアンモニウムヒドロ
キシド D−二:モノメチルトリメトキシエチルアンモニウムヒ
ドロキシド 上表のA3 、4 、5はアミン臭(分解臭)がひどく
排気装置を必要とした。才た、現像後の膜荒れが見られ
、精度の高い微細パターンを得ることができなかった。
Table 1 (Example) Table 2 (Comparative Example) (Notes) D-I: Monomethyltri(2-hydroxyethyl)ammonium hydroxide D-B: Tetramethylammonium hydroxide D-Hanitrimethylmonohydroxyenal ammonium Hydroxide D-2: Monomethyltrimethoxyethylammonium hydroxide A3, 4, and 5 in the above table had a severe amine odor (decomposition odor) and required an exhaust device. However, roughness of the film was observed after development, and a highly accurate fine pattern could not be obtained.

表−3 表−4 $−5 現像剤についてpHは重装な因子であり、puの0.1
〜0.2の僅かな差が現像剤の性能に大きく影響する。
Table-3 Table-4 $-5 Regarding developer, pH is an important factor, and 0.1 of pu
A slight difference of ~0.2 greatly affects the performance of the developer.

pIlが枝以下の現像剤は性能が低く、12.7以上の
ものは膜荒れが生ずるので好ましくない。
Developers with a pIl of less than a branch have poor performance, and those with a pIl of 12.7 or more cause film roughening, which is not preferred.

〔発明の効果〕 本発明の現像剤によれば、所定の鮮明なポジ型像盆芥易
に得ることができる。
[Effects of the Invention] According to the developer of the present invention, a predetermined clear positive image tray can be easily obtained.

また、経時安定性がよく、日数を経ても着色しない。さ
らに従来の現像剤のような強いアミン臭もない。なお、
アルカリ金属やハロゲン原子が混入することもないので
、半導体の特性を低下させることもない。さらにまた、
pHも現像液としての要求を満たしておシ、現像後は加
熱により容易に分解する等実用上条くの利点を有してい
る。
In addition, it has good stability over time and does not become discolored even after several days. Furthermore, there is no strong amine odor like in conventional developers. In addition,
Since no alkali metal or halogen atoms are mixed in, the properties of the semiconductor will not be degraded. Furthermore,
It has many practical advantages, such as its pH level meeting the requirements for a developing solution and its ability to be easily decomposed by heating after development.

特許出願人 四日市合成株式会社Patent applicant Yokkaichi Gosei Co., Ltd.

Claims (1)

【特許請求の範囲】 (式中、al 、 a2は炭素数1〜4のアルキル基、
R 、R は炭素数2〜4のアルキレン基を表わす。) で示される7 4級アンモニウムヒドロキシドからなる
ポジ型感光材料用現像剤。
[Claims] (In the formula, al and a2 are alkyl groups having 1 to 4 carbon atoms,
R and R represent an alkylene group having 2 to 4 carbon atoms. ) 7 A developer for positive-working photosensitive materials consisting of quaternary ammonium hydroxide.
JP10854384A 1984-05-30 1984-05-30 Developing agent for positive type photosensitive material Pending JPS60254043A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10854384A JPS60254043A (en) 1984-05-30 1984-05-30 Developing agent for positive type photosensitive material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10854384A JPS60254043A (en) 1984-05-30 1984-05-30 Developing agent for positive type photosensitive material

Publications (1)

Publication Number Publication Date
JPS60254043A true JPS60254043A (en) 1985-12-14

Family

ID=14487486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10854384A Pending JPS60254043A (en) 1984-05-30 1984-05-30 Developing agent for positive type photosensitive material

Country Status (1)

Country Link
JP (1) JPS60254043A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6363643A (en) * 1986-09-04 1988-03-22 多摩化学工業株式会社 Stable quaternary alkylhydroxyalkylammonium hydroxide aqueous solution
WO1994008276A1 (en) * 1992-09-28 1994-04-14 Ducoa L.P. Photoresist stripping process using n,n-dimethyl-bis(2-hydroxyethyl) quaternary ammonium hydroxide
JP2015028576A (en) * 2013-07-01 2015-02-12 富士フイルム株式会社 Pattern forming method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474432A (en) * 1977-10-25 1979-06-14 Eastman Kodak Co Method of developing photosensitive quinone diazide composition
JPS561935A (en) * 1979-06-18 1981-01-10 Eastman Kodak Co Stabilized developing material composition
JPS57114141A (en) * 1981-01-06 1982-07-15 San Ei Chem Ind Ltd Increasing method for developing power of developer for positive type photosensitive resin
JPS589143A (en) * 1981-04-10 1983-01-19 シツプレ−・カンパニ−・インコ−ポレ−テツド Photoresist developer composition contain no metal ion

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474432A (en) * 1977-10-25 1979-06-14 Eastman Kodak Co Method of developing photosensitive quinone diazide composition
JPS561935A (en) * 1979-06-18 1981-01-10 Eastman Kodak Co Stabilized developing material composition
JPS57114141A (en) * 1981-01-06 1982-07-15 San Ei Chem Ind Ltd Increasing method for developing power of developer for positive type photosensitive resin
JPS589143A (en) * 1981-04-10 1983-01-19 シツプレ−・カンパニ−・インコ−ポレ−テツド Photoresist developer composition contain no metal ion

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6363643A (en) * 1986-09-04 1988-03-22 多摩化学工業株式会社 Stable quaternary alkylhydroxyalkylammonium hydroxide aqueous solution
JPH0745443B2 (en) * 1986-09-04 1995-05-17 多摩化学工業株式会社 Stable quaternary alkyl hydroxyalkyl ammonium hydroxide aqueous solution
WO1994008276A1 (en) * 1992-09-28 1994-04-14 Ducoa L.P. Photoresist stripping process using n,n-dimethyl-bis(2-hydroxyethyl) quaternary ammonium hydroxide
JP2015028576A (en) * 2013-07-01 2015-02-12 富士フイルム株式会社 Pattern forming method

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