JPS6025267A - Semiconductor resistance element and usage thereof - Google Patents

Abstract

PURPOSE:To obtain an element having high resistance and high accuracy, resistance thereof hardly changes by the applying of reverse bias voltage, by forming a plurality of only semiconductor resistance elements, voltage applied between both terminals thereof is equal, into one insular region. CONSTITUTION:In semiconductor elements 3A, 3B, 3C, 3D and 3A', 3B' consisting of P type semiconductor regions formed in insular regions 2' and 2'' composed of insulated and isolated N type semiconductors, resistance elements, voltage applied between both terminals thereof is equal, are divided into groups, and each formed in several insular region. The resistance elements having the same voltage are arranged in the insular region in the same N type semiconductor region even when resistance values differ, and the resistance elements having different voltage are disposed in the insular regions in separate N type semiconductor regions even when resistance values are equal. A resistance change by reverse bias voltage is reduced largely because reverse bias voltage between the N type insular regions and P type resistance regions reaches to zero volt at all times with the exception of components by voltage applied to resistance element themselves.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to a semiconductor resistance element used in a semiconductor device and a method of using the same.

[Prior art]

Conventional semiconductor resistance elements are formed based on a design based on area calculation based on layer resistance, and when configuring an arbitrary circuit, depending on the location of use, an N-type semiconductor with which the resistance is formed is used. (The following explanation is given for the case where one conductivity type is N type.) All the resistive elements used are arranged within the same island region or for each element with the same resistance value, without separating the island regions. .

Furthermore, in order to prevent unstable factors such as parasitic PNP phenomena, the N-type island region is often connected to the highest potential of the desired circuit.

FIG. 1(a) is a plan view showing an arrangement of an example of such a conventional semiconductor resistance element, and FIG. 1(b) is a sectional view showing the arrangement. In FIG. 1(a), 1 is an insulating isolation region of a P-type semiconductor, 2 is an island region consisting of an N-type semiconductor region, and 3A, 3A, 3B, 3B., 3C.

3D is a resistance element made of a P-type semiconductor region.

Here, the resistance elements 3A, 3B, 3C, and 3D have different resistance values, but when used in a circuit configuration, the voltage applied to both ends is the same, and the resistance elements 3A and 3N have the same resistance value. , 3B and 3B' have the same resistance value, but when used in a circuit configuration, the voltages applied to both ends are different.

Conventionally, as shown in FIG. 1(a), all the resistance elements used in a given circuit configuration are arranged in the island region 2, or the island regions are divided and arranged according to the resistance value (Fig. 1(a)). (omitted). Also, island region 2 is usually the topmost part of the circuit. It is connected to the atN position.

Now, the island region 2 is connected to a potential of 10 volts, which is the highest potential of the circuit, one end of each resistance element is grounded, and resistance elements 3A, 3B, 3C, and 3D have a voltage of 1 volt, 3A', and 3A'.
It is assumed that a voltage of 2 volts is applied to 3B'. Under this condition, the resistance element 3A.

A reverse bias voltage of 10 volts at the ground side end of the resistor element and 9 volts at the high potential side end is applied between the P-type semiconductor region where 313, 3C, and 3D are formed and the N-type semiconductor island region 2. will be added. Similarly, resistive elements 38',
A reverse bias voltage of 10 volts is applied to the ground side end of 3B', and a reverse bias voltage of 8 volts is applied to the high potential side end.

In this way, when a reverse bias voltage is applied between the island region and the semiconductor region forming the resistance element, the resistance region on the high resistance side becomes small due to the formation of a space charge region, and as a result, the resistance increases. Become a dog. This reverse bias effect is divided into a component due to the voltage applied across the resistive element and a component due to the voltage applied to the island region.

In the former case, the change in resistance value is about several percent for a 1 volt change in the voltage across both ends.

On the other hand, in the latter case, with the voltage applied across the resistance element constant, for a reverse bias voltage of 1 volt,
It varies greatly, from several to several tens of percent. Of course, the influence of this resistance change becomes greater as the layer resistance value increases, and therefore, the resistance element has a higher resistance value.

On the other hand, in recent years, with the reduction in power consumption of large-scale integrated circuits, highly accurate high resistance elements are required. moreover,
In order to increase the integration density of this type of resistor element, the element area must be the same or smaller than conventional ones, and in manufacturing,
It is now necessary to increase the layer resistance. Unlike resistance elements with low resistance values of several tens of ohms to several ohms, high resistance elements manufactured with increased layer resistance have a big problem of resistance change due to reverse bias voltage, as described above.

By adopting a configuration in which the reverse bias voltage between the resistive region and the island region is small, it is possible to create a high-resistance, high-precision semiconductor that reduces the resistance change due to the application of a reverse bias voltage. An object of the present invention is to provide a resistive element and a method of using the same.

[Structure of the invention]

The semiconductor resistance element of the first aspect of the present invention is a semiconductor resistance element consisting of an opposite conductivity type region formed in a high voltage range of one conductivity type which is insulated and separated. A plurality of these are formed within one island region.

Further, a method of using the semiconductor resistance element of the second invention includes applying a voltage equal to the voltage applied across the semiconductor resistance element of the first invention to the island region. It consists of the following:

[Explanation of Examples]

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 2 is a plan view showing an arrangement of an embodiment of the first invention.

It should be noted that this embodiment was carried out in correspondence with the conventional examples shown in FIGS. 1(a) and 1(b), and the same parts are given the same reference numerals.

In this embodiment, semiconductor resistance elements 3A, 3B, 3C, 3D, 38', and 3B' are composed of P-type semiconductor regions formed in isolated N-type semiconductor island regions 2' and 2''. a resistive element 3A with equal voltage applied across both ends;
It is divided into groups 3B, 3C, and 3D and groups 3A+3B' and formed in separate island areas 2' and 2', respectively.

In this embodiment, as described above, the resistor element 3A.

Although 3B, 3C, and 3D have different resistance values, one end of each is grounded (the ground wiring is not shown), and a voltage of 1 volt is applied to each end on the high voltage side. The resistance values of resistance elements 38' and 3B' are the same as those of 3 and 3B', respectively, and one end of each is grounded (ground wiring is not shown). are each applied with a voltage of 2 volts.

In other words, resistive elements with the same voltage applied across them are arranged in the island region of the same N-type semiconductor region even if their resistance values are different; Even if the resistance values are the same, they are arranged in an island region of another N-type semiconductor region.

Next, as an embodiment of the second invention, in the embodiment of the first invention, a voltage equal to the voltage applied across each semiconductor resistance element is applied to the island region 2'.
A case will be described in which a voltage of 1 volt is applied to the island region 2'' and a voltage of 2 volts is applied to the island region 2''.

According to this embodiment, due to the above-mentioned circumstances, an N-type island region and a P
The reverse bias voltage between the resistive regions of the mold is always zero volts, except for the component due to the voltage applied to the resistive element itself, so the resistance change due to the reverse bias voltage is significantly small, and the resistor has high resistance. A highly accurate semiconductor resistance element can be obtained.

In the above description, the island region is an N-type semiconductor, but it goes without saying that the present invention is applicable even if the island region is a P-type semiconductor.

〔Effect of the invention〕

As described in detail above, according to the semiconductor resistance element and the method of using the same of the present invention, the voltage applied across the resistance element and the voltage applied to the island region where the resistance element is formed are the same voltage. Therefore, no reverse bias voltage is applied between the island region and the resistive element region, except for the reverse bias component due to the voltage applied to the resistive element itself, so there is no change in resistance due to the reverse bias voltage. A very small, high-resistance, high-precision semiconductor resistance element can be obtained.

[Brief explanation of the drawing]

FIG. 1(a) is a plan view showing an arrangement of an example of a conventional semiconductor resistance element, FIG. 1(b) is a sectional view taken along line A-A' in FIG. 1(a), and FIG. FIG. 3 is a plan view showing the arrangement of the embodiment. 1...Insulating isolation region (P-type semiconductor), 2.2
', 2'...Island region (N-type semiconductor), 3A,
3A', 3B, 3B'. 3C, 3D... Semiconductor resistance element (P-type semiconductor region). Figure 2

Claims (2)

[Claims] (1) In a semiconductor resistance element consisting of an opposite conductivity type region formed in an isolated island region of one conductivity type, a plurality of semiconductor resistance elements having the same voltage applied between both ends are connected to one island. A semiconductor resistance element characterized in that it is formed within a region. (2) In a semiconductor resistance element consisting of an opposite conductivity type region formed in an isolated island region of one conductivity type, a plurality of semiconductor resistance elements having the same voltage applied between both ends are connected to one island. 1. A method of using a semiconductor resistance element, characterized in that a semiconductor resistance element formed within a region is used by applying a voltage equal to the voltage applied between both ends of the semiconductor resistance element to the island region.