JPS60242612A - Deposition film forming method - Google Patents

Deposition film forming method

Info

Publication number
JPS60242612A
JPS60242612A JP59098420A JP9842084A JPS60242612A JP S60242612 A JPS60242612 A JP S60242612A JP 59098420 A JP59098420 A JP 59098420A JP 9842084 A JP9842084 A JP 9842084A JP S60242612 A JPS60242612 A JP S60242612A
Authority
JP
Japan
Prior art keywords
deposition film
formed
si
heat energy
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP59098420A
Other versions
JPH0712024B2 (en
Inventor
Takeshi Eguchi
Masahiro Haruta
Yutaka Hirai
Takashi Katagiri
Hiroshi Matsuda
Yukio Nishimura
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59098420A priority Critical patent/JPH0712024B2/en
Publication of JPS60242612A publication Critical patent/JPS60242612A/en
Publication of JPH0712024B2 publication Critical patent/JPH0712024B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only

Abstract

PURPOSE:To enable to form a thick deposition film of large area by a method wherein exciting energy is obtained using a specific annular silane compound, and a deposition film containing silicon atoms is formed using low level heat energy. CONSTITUTION:Pertaining to a method wherein the excitation and decompositional condition of row gas are formed by giving heat energy and, especially, an amorphous silicon (a-Si) deposition film is formed on a specific supporting member, an a-Si deposition film can be formed with low energy level and high film- forming speed using the annular silane compound in the mixed condition with a halogenide as the raw gas to be decomposed by heat energy, which is indicated by a general formula (provided that the n in the above-mentioned formula indicates 3, 4 or 5, and R indicates H or SiH3). Also, the a-Si deposition film which is excellent in uniformity of optical characteristics and stability in quality can be formed. Said deposition film is formed inside a deposition chamber 1.
JP59098420A 1984-05-16 1984-05-16 A method of forming a deposited film Expired - Fee Related JPH0712024B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59098420A JPH0712024B2 (en) 1984-05-16 1984-05-16 A method of forming a deposited film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59098420A JPH0712024B2 (en) 1984-05-16 1984-05-16 A method of forming a deposited film

Publications (2)

Publication Number Publication Date
JPS60242612A true JPS60242612A (en) 1985-12-02
JPH0712024B2 JPH0712024B2 (en) 1995-02-08

Family

ID=14219327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59098420A Expired - Fee Related JPH0712024B2 (en) 1984-05-16 1984-05-16 A method of forming a deposited film

Country Status (1)

Country Link
JP (1) JPH0712024B2 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62152171A (en) * 1985-12-26 1987-07-07 Canon Inc Thin-film transistor
US6503570B2 (en) 2000-03-13 2003-01-07 Jrs Corporation Cyclosilane compound, and solution composition and process for forming a silicon film
US7314513B1 (en) 2004-09-24 2008-01-01 Kovio, Inc. Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions
US7422708B2 (en) 2003-07-08 2008-09-09 Kovio, Inc. Compositions for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7485691B1 (en) 2004-10-08 2009-02-03 Kovio, Inc Polysilane compositions, methods for their synthesis and films formed therefrom
US7498015B1 (en) 2004-02-27 2009-03-03 Kovio, Inc. Method of making silane compositions
US7674926B1 (en) 2004-10-01 2010-03-09 Kovio, Inc. Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
US7709307B2 (en) 2006-08-24 2010-05-04 Kovio, Inc. Printed non-volatile memory
US8092867B2 (en) 2006-10-06 2012-01-10 Kovio, Inc. Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers
US8211396B1 (en) 2004-09-24 2012-07-03 Kovio, Inc. Heterocyclic semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
EP2589071A2 (en) * 2010-07-02 2013-05-08 Matheson Tri-Gas, Inc. Thin films and methods of making them using cyclohexasilane
US8624049B2 (en) 2010-01-18 2014-01-07 Kovio, Inc. Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62152171A (en) * 1985-12-26 1987-07-07 Canon Inc Thin-film transistor
US6503570B2 (en) 2000-03-13 2003-01-07 Jrs Corporation Cyclosilane compound, and solution composition and process for forming a silicon film
US7767261B2 (en) 2003-07-08 2010-08-03 Kovio, Inc. Methods for forming passivated semiconductor nanoparticles
US7879696B2 (en) 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7422708B2 (en) 2003-07-08 2008-09-09 Kovio, Inc. Compositions for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7553545B2 (en) 2003-07-08 2009-06-30 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US8124040B1 (en) 2004-02-27 2012-02-28 Kovio, Inc. Methods of making silane compositions
US7498015B1 (en) 2004-02-27 2009-03-03 Kovio, Inc. Method of making silane compositions
US8367031B1 (en) 2004-02-27 2013-02-05 Kovio, Inc. Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom
US7799302B1 (en) 2004-02-27 2010-09-21 Kovio, Inc. Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom
US8603426B1 (en) 2004-02-27 2013-12-10 Kovio, Inc. Method of making a silicon-containing film
US8211396B1 (en) 2004-09-24 2012-07-03 Kovio, Inc. Heterocyclic semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
US8840857B1 (en) 2004-09-24 2014-09-23 Thin Film Electronics Asa Heterocyclic semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
US8372194B1 (en) 2004-09-24 2013-02-12 Kovio, Inc. Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions
US7981482B1 (en) 2004-09-24 2011-07-19 Kovio, Inc. Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions
US7314513B1 (en) 2004-09-24 2008-01-01 Kovio, Inc. Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions
US7674926B1 (en) 2004-10-01 2010-03-09 Kovio, Inc. Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
US7723457B1 (en) 2004-10-08 2010-05-25 Kovio, Inc. Polysilane compositions, methods for their synthesis and films formed therefrom
US8236916B1 (en) 2004-10-08 2012-08-07 Kovio, Inc. Polysilane compositions, methods for their synthesis and films formed therefrom
US8242227B2 (en) 2004-10-08 2012-08-14 Kovio, Inc. Doped polysilanes, compositions containing the same, methods for making the same, and films formed therefrom
US7485691B1 (en) 2004-10-08 2009-02-03 Kovio, Inc Polysilane compositions, methods for their synthesis and films formed therefrom
US7951892B1 (en) 2004-10-08 2011-05-31 Kovio, Inc. Doped polysilanes, compositions containing the same, methods for making the same, and films formed therefrom
US8455604B1 (en) 2004-10-08 2013-06-04 Kovio, Inc. Polysilane compositions, methods for their synthesis and films formed therefrom
US7709307B2 (en) 2006-08-24 2010-05-04 Kovio, Inc. Printed non-volatile memory
US8092867B2 (en) 2006-10-06 2012-01-10 Kovio, Inc. Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers
US8461284B2 (en) 2006-10-06 2013-06-11 Kovio, Inc. Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers
US8846507B2 (en) 2006-10-06 2014-09-30 Thin Film Electronics Asa Silicon polymers, methods of polymerizing silicon compounds, and methods of forming thin films from such silicon polymers
US8624049B2 (en) 2010-01-18 2014-01-07 Kovio, Inc. Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions
EP2589071A4 (en) * 2010-07-02 2014-04-09 Matheson Tri Gas Inc Thin films and methods of making them using cyclohexasilane
EP2589071A2 (en) * 2010-07-02 2013-05-08 Matheson Tri-Gas, Inc. Thin films and methods of making them using cyclohexasilane

Also Published As

Publication number Publication date
JPH0712024B2 (en) 1995-02-08

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees