JPS60241201A - Method of trimming low resistance resistor - Google Patents

Method of trimming low resistance resistor

Info

Publication number
JPS60241201A
JPS60241201A JP59097767A JP9776784A JPS60241201A JP S60241201 A JPS60241201 A JP S60241201A JP 59097767 A JP59097767 A JP 59097767A JP 9776784 A JP9776784 A JP 9776784A JP S60241201 A JPS60241201 A JP S60241201A
Authority
JP
Japan
Prior art keywords
resistor
resistance value
resistance
low resistance
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59097767A
Other languages
Japanese (ja)
Inventor
啓二 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59097767A priority Critical patent/JPS60241201A/en
Publication of JPS60241201A publication Critical patent/JPS60241201A/en
Pending legal-status Critical Current

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  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (発明の目的及び技術分野) 本発明は薄膜混成集積回路等に用いられる抵抗体のトリ
ミング方法に関するものでアシ、具体的には同一基板上
に低抵抗値から高抵抗値までの広い抵抗値範囲におよぶ
複数個の抵抗体を形成する際の低抵抗体のトリミング方
法に関するものでおる。
Detailed Description of the Invention (Objective and Technical Field of the Invention) The present invention relates to a method for trimming a resistor used in thin film hybrid integrated circuits, etc. The present invention relates to a method of trimming a low resistance element when forming a plurality of resistors having a wide resistance value range up to 100.

近年エレクトロニクるの目ざましい発展によシ様々な回
路機能が要求されつつあり、混成集積回路の抵抗体に関
しても数Ω〜数100にΩの抵抗体を同一基板上に形成
することが要求されつつある。
In recent years, with the remarkable development of electronics, various circuit functions are being required, and with regard to the resistors of hybrid integrated circuits, it is becoming necessary to form resistors with resistances of several Ω to several 100 Ω on the same substrate. be.

(従来技術) 薄膜混成集積回路に用いられる抵抗体は原価上の制約か
ら通常一層構造の抵抗体膜で構成される。
(Prior Art) Resistors used in thin film hybrid integrated circuits are usually composed of a single-layer resistor film due to cost constraints.

高抵抗値の抵抗体を形成するには高面積抵抗値を有する
抵抗膜を使用し、同時に抵抗パターン幅Wを細く、抵抗
パターン長さZを長くして形成しておシ、逆に低抵抗値
の抵抗体を形成するには低面積抵抗値を有する抵抗膜を
使用し、同時にパターン幅Wを太く抵抗パターン長さノ
を短くして形成している。
To form a resistor with a high resistance value, a resistive film with a high area resistance value is used, and at the same time, the resistor pattern width W is made narrower and the resistor pattern length Z is made longer. In order to form a resistor of this value, a resistive film having a low area resistance value is used, and at the same time, the pattern width W is made thicker and the resistor pattern length is made shorter.

要求される抵抗値が高抵抗値だけもしくは低抵抗値だけ
の場合は上記した方法で対応が可能であるが数Ω〜数1
00にΩの抵抗体を同−基i上に形成する際には抵抗膜
の面積抵抗値の選定が困難になる。
If the required resistance value is only a high resistance value or only a low resistance value, it can be handled by the method described above, but it can be handled by several ohms to several 1 Ω.
When forming a resistor of 0.00Ω on the same substrate i, it becomes difficult to select the area resistance value of the resistive film.

面積抵抗値を低くすると高抵抗値を得るのに抵抗長さl
を長くするため抵抗体の占有面積が大きくなり、面積抵
抗値を高くすると低抵抗値を得るのに第1図に示すよう
に抵抗幅Wをかなシ太くしなければならず抵抗体をある
特定方向に広げていくため設計上の制約を受ける。
In order to obtain a high resistance value when the area resistance value is low, the resistance length l
In order to make the resistor longer, the area occupied by the resistor increases, and if the area resistance value is increased, the resistance width W must be widened to obtain a low resistance value, as shown in Figure 1. It is subject to design constraints because it expands in the direction.

また低抵抗を得るのに第2図のようなくし形の抵抗体パ
ターンが容易に考えられ、低抵抗を得るには第1図より
すぐれてはいるものの抵抗体をレーザービーム等で切断
するためレーザービーム径、ビーム位置精度、パターン
精度等を考慮しなければならず導体と導体との間隔すな
わち抵抗長さを一定以上に短くすることが1峻であシ、
高面積抵抗値の抵抗膜を用いた場合には低抵抗を得にく
いという欠点があつfc。
Also, to obtain low resistance, a comb-shaped resistor pattern as shown in Figure 2 can be easily considered, and although it is superior to Figure 1 in order to obtain low resistance, the resistor is cut with a laser beam, etc. Beam diameter, beam position accuracy, pattern accuracy, etc. must be considered, and it is important to shorten the distance between conductors, that is, the resistance length, to a certain level.
fc has the disadvantage that it is difficult to obtain low resistance when a resistive film with a high area resistance value is used.

(発明の構成) 本発明は上述の問題点を根本的に解決するために導体膜
、抵抗体膜から構成される抵抗体を2個以上並列に接続
した低抵抗用抵抗体において、該抵抗膜と該導体膜とを
交互に一直線状に切断して抵抗値を調節することを特徴
とする低抵抗用抵抗体のトリミング方法を提供するもの
であシ、本発明を用いれば高面積抵抗値の抵抗膜を用い
た場合にも充分低い低抵抗を得ることが可能で6.D、
しかもトリミングも可能である。
(Structure of the Invention) In order to fundamentally solve the above-mentioned problems, the present invention provides a low-resistance resistor in which two or more resistors each consisting of a conductor film and a resistor film are connected in parallel. The present invention provides a method for trimming a low resistance resistor, which is characterized by adjusting the resistance value by cutting the conductor film and the conductor film alternately in a straight line. 6. It is possible to obtain sufficiently low resistance even when using a resistive film. D.
Moreover, trimming is also possible.

(発明の作用及び効果) 抵抗体の抵抗値Rは面積抵抗値Rsに抵抗体の長さlを
乗じ抵抗体の幅Wで除した値である。
(Operations and Effects of the Invention) The resistance value R of the resistor is the value obtained by multiplying the sheet resistance value Rs by the length l of the resistor and dividing by the width W of the resistor.

すなわち である。i.e. It is.

第1図は先に説明したように従来の考え方に工11 る低抵抗パターンで”w=ioであるからRs−”50
0Ω/口の時導体抵抗値を零とするとR−50Ωとなる
As explained earlier, Figure 1 shows a low-resistance pattern based on the conventional concept.Since w=io, Rs-50
If the conductor resistance value is zero at 0Ω/mouth, it becomes R-50Ω.

一方第2図も低抵抗パターンであるがレーザートリミン
グを考慮して抵抗長さlt限度以上に短くできずl/W
=易でおるからRs=500Ω/口の時導体抵抗値を零
とするとR=25Ωになる。
On the other hand, Fig. 2 also has a low resistance pattern, but considering laser trimming, the resistance length cannot be shortened beyond the limit of lt, l/W.
= Easy, so when Rs = 500Ω/mouth and the conductor resistance value is set to zero, R = 25Ω.

第3図は本発明によるトリミング方法を通用した低抵抗
パターンでありl/W=−であるか0G らRr=500Ω/口の時導体抵抗値を零とするとR=
 2.5Ωになる。第1図〜第3図はほぼ同じような面
積にもかかわらず得られる抵抗値が大きく相違しておシ
、トリミングが可能な低抵抗値を得るためには本発明を
適用した抵抗体が最もすぐれていることがわかる。
Figure 3 shows a low resistance pattern using the trimming method according to the present invention, and when l/W=- or 0G, Rr=500Ω/out, and the conductor resistance value is zero, R=
It becomes 2.5Ω. Although the areas in Figures 1 to 3 are almost the same, the obtained resistance values are greatly different.In order to obtain a low resistance value that can be trimmed, the resistor to which the present invention is applied is the best. I can see that it is excellent.

(実施例) 以下に本発明の実施例を第3図用いて具体的に説明する
(Example) An example of the present invention will be specifically described below with reference to FIG.

実施例はアルミナセラミック基板上に作製したタンタル
薄膜抵抗体であシ、タンタル薄膜抵抗膜及び導体膜にク
ロム−パラジウム−金)は通常のマグネトロンスパッタ
リング装置で成膜し、周知のフォトエツチング技術によ
り導体、抵抗体パターンを形成した後、350℃五時間
の熱処理を施したものである。この時の抵抗膜の面積抵
抗値は熱処理後で約500Ω/口であった。
The example is a tantalum thin film resistor fabricated on an alumina ceramic substrate. The tantalum thin film resistor film and the conductor film (chromium-palladium-gold) were formed using an ordinary magnetron sputtering device, and the conductor was formed using a well-known photoetching technique. After forming the resistor pattern, heat treatment was performed at 350° C. for 5 hours. The sheet resistance value of the resistive film at this time was approximately 500Ω/portion after the heat treatment.

献体1個の長1は20 fi m *幅Wは400am
であシ、これを10個並列に接続したものであシ、回路
機能上要求される低抵抗値は5Ω高抵抗値は350にΩ
でめる。抵抗値の初期値は約2,5Ωであシ抵抗値調節
はレーザートリミング法によ如実施した。レーザーはY
AGレーザーを使用し抵抗。
Length 1 of one donated body is 20 fi m *Width W is 400 am
Yes, 10 of these are connected in parallel.The low resistance value required for circuit function is 5Ω, and the high resistance value is 350Ω.
Demeru. The initial resistance value was about 2.5Ω, and the resistance value was adjusted by laser trimming. Laser is Y
Resistance using AG laser.

導体と順次切断していくが目襟抵抗値範囲になったら切
断を中止する。切断を中止する位置は導体上、抵抗上の
いずれでもよいが第3図では導体上とした。第3図では
抵抗が10個並列に接続されているため抵抗の追い込み
可能精度は高くはないが、並列に接続する抵抗体の数を
増加させれば抵抗の追い込み可能精度を高くすることが
できる。
Cut the conductor one by one, but stop cutting when the resistance value reaches the target range. The position at which cutting is stopped may be either on the conductor or on the resistor, but in FIG. 3, it is on the conductor. In Figure 3, 10 resistors are connected in parallel, so the accuracy with which the resistance can be driven is not high, but the accuracy with which the resistance can be driven can be increased by increasing the number of resistors connected in parallel. .

(発明のまとめ) 以上のように本発明は抵抗体の製造方法を変更すること
なくレーザートリミング方法を変更することにより低抵
抗パターンを修正して低抵抗を作製することが可能でら
シ、かつその効果も大きく充分実用に供せられるもので
ある。
(Summary of the Invention) As described above, the present invention makes it possible to modify a low resistance pattern and produce a low resistance by changing the laser trimming method without changing the manufacturing method of the resistor. The effect is great and it can be put to practical use.

【図面の簡単な説明】[Brief explanation of drawings]

′lA1図、第2図は従来のトリミング方法でトリミン
グする低抵抗パターンの平面図でめシ、第3図は本発明
のトリミング万伝でトリミングする低抵抗パターンの平
面図でおる。 同図において 1・・・・・・抵抗膜、2・・団・導体膜、3・旧・・
レーザービームによる切断の跡である。 s1図
1A1 and 2 are plan views of low resistance patterns trimmed by the conventional trimming method, and FIG. 3 is a plan view of the low resistance patterns trimmed by the trimming method of the present invention. In the same figure, 1...resistance film, 2... group/conductor film, 3... old...
This is a cut mark caused by a laser beam. s1 diagram

Claims (1)

【特許請求の範囲】[Claims] 導体膜、抵抗体膜から構成される抵抗体を2個以上並列
に接続した低抵抗用抵抗体において、該抵抗膜と該導体
膜とを交互に一直線状に切断して抵抗値を調節すること
を特徴とする低抵抗用抵抗体のトリミング方法。
In a low-resistance resistor in which two or more resistors each consisting of a conductor film and a resistor film are connected in parallel, the resistance value is adjusted by alternately cutting the resistor film and the conductor film in a straight line. A method for trimming a resistor for low resistance.
JP59097767A 1984-05-16 1984-05-16 Method of trimming low resistance resistor Pending JPS60241201A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59097767A JPS60241201A (en) 1984-05-16 1984-05-16 Method of trimming low resistance resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59097767A JPS60241201A (en) 1984-05-16 1984-05-16 Method of trimming low resistance resistor

Publications (1)

Publication Number Publication Date
JPS60241201A true JPS60241201A (en) 1985-11-30

Family

ID=14201010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59097767A Pending JPS60241201A (en) 1984-05-16 1984-05-16 Method of trimming low resistance resistor

Country Status (1)

Country Link
JP (1) JPS60241201A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016131167A (en) * 2015-01-13 2016-07-21 三菱マテリアル株式会社 Method for adjusting resistance value of electronic device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016131167A (en) * 2015-01-13 2016-07-21 三菱マテリアル株式会社 Method for adjusting resistance value of electronic device

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