JPS60239386A - Process for preparing single crystal - Google Patents
Process for preparing single crystalInfo
- Publication number
- JPS60239386A JPS60239386A JP9514684A JP9514684A JPS60239386A JP S60239386 A JPS60239386 A JP S60239386A JP 9514684 A JP9514684 A JP 9514684A JP 9514684 A JP9514684 A JP 9514684A JP S60239386 A JPS60239386 A JP S60239386A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- doping agent
- concn
- single crystal
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】 〔技術分野〕 本発明は、集光70−ティングゾーン(以下F。[Detailed description of the invention] 〔Technical field〕 The present invention focuses on a light focusing zone (hereinafter referred to as F).
2、)法による単結晶製造に関するものであ゛る。2.) This relates to the production of single crystals by the method.
従来、集光フローティングゾーン法により母結晶に対す
る分配係数が小さい物質をドープした結晶を合成すると
き一様な濃度の原料棒を使用すると初期は結晶内のドー
ピング剤濃度が低く<、育成するに従って次第に濃度が
高くなり、均一にドープできないという問題点があった
。Conventionally, when synthesizing a crystal doped with a substance with a small distribution coefficient with respect to the mother crystal using the light-concentrating floating zone method, when a raw material rod with a uniform concentration is used, the concentration of the doping agent in the crystal is initially low, but gradually increases as it grows. There was a problem that the concentration was high and it was not possible to dope uniformly.
本発明の目的は、集光F、Z、法により母結晶に対する
分配係数が小さい物質を均一にドープすることである。An object of the present invention is to uniformly dope a substance having a small distribution coefficient with respect to the host crystal using the condensing F, Z method.
本発明では、原料棒の先端部分のドーピング剤濃度を高
めることにより結晶内に均一にドープしようとした。こ
のとき、先端部分の濃度及び量は結晶の材質及び径によ
り異なる。また残部濃度は目的とする結晶のドーピング
濃度にすれば良い・〔実施例〕
〈実施例1〉
アレキサンドライト単結晶の合成を行なった。In the present invention, an attempt was made to uniformly dope into the crystal by increasing the concentration of the doping agent at the tip of the raw material rod. At this time, the concentration and amount of the tip portion vary depending on the material and diameter of the crystal. The remaining concentration may be set to the desired doping concentration of the crystal. [Example] <Example 1> An alexandrite single crystal was synthesized.
0原料棒組成
先端部分
BeO5,00231F
h1.2o、 2o3922f
Fθ203 3.193EI
Cr203 ’0608C1f
残部
BeO’5.0023ft
Aλ20. 20J922S’
lPe203 060685’
0r2030.12169
0原料棒作製
上記原料粉末を各々、アルミナ乳ばちに秤り取り十分混
合する。次に先端部分の原料粉末を1.52秤り取りφ
8WILのゴムチューブに詰める。次に残部の原料粉末
を詰め、チューブ内の空気抜きを行ないラバープレス法
によりφ7 flllX 100 gB(ffi)の棒
に成型する。これを1600℃で4時間電気炉中で焼結
する。0 Raw material rod composition Tip portion BeO5,00231F h1.2o, 2o3922f Fθ203 3.193EI Cr203 '0608C1f Remainder BeO'5.0023ft Aλ20. 20J922S' lPe203 060685' 0r2030.12169 0 Production of raw material rod Each of the above raw material powders is weighed into an alumina mortar and mixed thoroughly. Next, weigh 1.52 of the raw material powder at the tip and φ
Pack into 8WIL rubber tube. Next, the remaining raw material powder is packed, air is removed from the tube, and the tube is molded into a rod with a diameter of 7 mm x 100 gB (ffi) using a rubber press method. This is sintered in an electric furnace at 1600°C for 4 hours.
0結晶合成
上記原料棒を用いて、第1図に示すような実験装置によ
り下記の合成条件で結晶を合成する0成長方向 : (
001)
育成雰囲気 :空気
1 シャフトの回転数 :30rp・ (上、下、逆回
転)成長速度 :10語/H
育成時間 :48時間
0結果及び所見
均一に着色したアレキサンドライト単結晶が合成できた
。またこの結晶を育成方向に平行に切断して成長方向に
添ってXiマイクロアナライザー(X0M、A、)によ
り鉄及びクロムの濃度を分析した所一様に存在していた
。0 Crystal Synthesis Using the above raw material rod, synthesize crystals under the following synthesis conditions using the experimental apparatus shown in Figure 1.0 Growth direction: (
001) Growth atmosphere: Air 1 Shaft rotation speed: 30 rpm (upward, downward, reverse rotation) Growth rate: 10 words/H Growth time: 48 hours 0 Results and findings Uniformly colored alexandrite single crystals were synthesized. Further, when this crystal was cut parallel to the growth direction and the concentration of iron and chromium was analyzed along the growth direction using a Xi microanalyzer (X0M, A), it was found that iron and chromium were uniformly present.
〈実施例2〉 アレキサンドライト単結晶を合成した。<Example 2> Synthesized alexandrite single crystal.
0原料棒組成 先端部及び残部共に〈実施例1〉に従う。0 raw material rod composition Both the tip portion and the remaining portion follow <Example 1>.
0原料棒作製
φ10gのゴムチューブを使用して原料棒の径を10襲
(φ)とし先端部の量を292とする以外は〈実施例1
〉に従う。0 Raw material rod production <Example 1 except that a rubber tube with a diameter of 10 g was used, the diameter of the raw material rod was set to 10 strokes (φ), and the amount of the tip was 292 mm.
> Follow.
0結晶合成 〈実施例1〉に従う。0 crystal synthesis According to <Example 1>.
0結果及び所見
均一に着色したアレキサンドライト単結晶が合成できた
。またぐ実施例1〉と同様にXMAにより分析した所、
鉄及びクロムが一様に存在した。0 Results and Observations Uniformly colored alexandrite single crystals were synthesized. Analyzed by XMA in the same manner as in Example 1>,
Iron and chromium were uniformly present.
〈実施例3〉
グリーンサファイアの単結晶を合成した〇〇原料棒組成
先端部
p、I/、2o336.01i’
Oo 0 4. OS’
残部
AλzOs 3B、8f
Oo O1,2S’
0原料棒作製
上記原料粉末を各々アルミナ乳ばちに秤り取り十分混合
する。次に先端部分の原料粉末を3.01秤り取りφ1
0gIIkのゴムチューブに詰める。次に残部の原料粉
末を詰め、チューブ内の空気抜きを行ないラバープレス
法により8jll(φ)x 1o o m(A)の欅に
成型する。これを1600℃で4時間電気炉中で焼結す
る。<Example 3> 〇〇 Raw material rod composition for synthesizing single crystal of green sapphire Tip part p, I/, 2o336.01i' Oo 0 4. OS' Remainder AλzOs 3B, 8f Oo O1, 2S' 0 Preparation of raw material rod The above raw material powders are each weighed into an alumina mortar and mixed thoroughly. Next, weigh out 3.01 mm of raw material powder at the tip and φ1
Pack into a 0gIIk rubber tube. Next, the remaining raw material powder is packed, air is removed from the tube, and the tube is molded into a keyaki of 8 jll (φ) x 10 o m (A) by a rubber press method. This is sintered in an electric furnace at 1600°C for 4 hours.
0結晶合成
上記原料棒を用いて第1図に示すような実験装置により
下記の合成条件で結晶を合成する。0 Crystal Synthesis Using the raw material rod described above, crystals were synthesized under the following synthesis conditions using an experimental apparatus as shown in FIG.
成長方向 : (1,o o )
育成雰囲気 :水素
シャフトの回転数 : 30 rpm(上、下、逆回転
)成長速度 =1.0語/H
育成時間−:48時間
0結果及び所見
均一に着色したグリーンサファイアの単結晶が合成でき
た。また〈実施例1〉と同様にXMAにより分析した所
、一様にコバルトが存在していた。Growth direction: (1, o o) Growth atmosphere: Hydrogen Rotation speed of shaft: 30 rpm (upward, downward, reverse rotation) Growth rate = 1.0 words/H Growth time: 48 hours 0 Results and findings Uniform coloring A single crystal of green sapphire was synthesized. Further, when analyzed by XMA in the same manner as in <Example 1>, cobalt was uniformly present.
本発明の効果は、原料棒の先端部の濃度を高めることに
より結晶全体に均一にドープすることができたことであ
る。The effect of the present invention is that by increasing the concentration at the tip of the raw material rod, the entire crystal can be doped uniformly.
第1図は、本発明に用いた実験装置の概略図である。 1・・・回転楕円面鏡 2…ハロゲンランプ 3・・・石英管 4・・・雰囲気ガス導入口 5・・・雰囲気ガス出口 6・・・原料棒 7・・・種子結晶 8・・・融帯 9・・・主軸上シャフト 10・・・主軸下シャフト 以 上 出願人 株式会社諏訪精工舎 第1図 FIG. 1 is a schematic diagram of the experimental apparatus used in the present invention. 1...Spheroidal mirror 2...Halogen lamp 3...Quartz tube 4... Atmosphere gas inlet 5... Atmosphere gas outlet 6...Raw material rod 7... Seed crystal 8... Melting zone 9... Main spindle shaft 10... Main spindle lower shaft that's all Applicant: Suwa Seikosha Co., Ltd. Figure 1
Claims (1)
料棒の先端部分のドーピング剤濃度を高めることを特徴
とする単結晶製造方法。1. A method for producing a single crystal, which comprises increasing the concentration of a doping agent at the tip of a raw material rod in crystal synthesis using a light-concentrating 70-ting zone method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9514684A JPS60239386A (en) | 1984-05-11 | 1984-05-11 | Process for preparing single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9514684A JPS60239386A (en) | 1984-05-11 | 1984-05-11 | Process for preparing single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60239386A true JPS60239386A (en) | 1985-11-28 |
Family
ID=14129655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9514684A Pending JPS60239386A (en) | 1984-05-11 | 1984-05-11 | Process for preparing single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60239386A (en) |
-
1984
- 1984-05-11 JP JP9514684A patent/JPS60239386A/en active Pending
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