JPS60237812A - Method of producing connection unit for cv cable - Google Patents

Method of producing connection unit for cv cable

Info

Publication number
JPS60237812A
JPS60237812A JP60079834A JP7983485A JPS60237812A JP S60237812 A JPS60237812 A JP S60237812A JP 60079834 A JP60079834 A JP 60079834A JP 7983485 A JP7983485 A JP 7983485A JP S60237812 A JPS60237812 A JP S60237812A
Authority
JP
Japan
Prior art keywords
layer
cable
semiconductive
insulating layer
polyolefin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60079834A
Other languages
Japanese (ja)
Inventor
大畠 勝一
正幸 山口
丹野 史郎
永野 宏郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Tokyo Electric Power Co Holdings Inc
Original Assignee
Tokyo Electric Power Co Inc
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electric Power Co Inc, Hitachi Cable Ltd filed Critical Tokyo Electric Power Co Inc
Priority to JP60079834A priority Critical patent/JPS60237812A/en
Publication of JPS60237812A publication Critical patent/JPS60237812A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明はCVケーブル用接続部、特に、ポリオレフィン
絶縁体を加熱溶融して絶縁層を成形する接続部の製造法
に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a connection portion for a CV cable, and particularly to a method for manufacturing a connection portion by heating and melting a polyolefin insulator to form an insulating layer.

C■ケーブルは取扱いの容易性から275にV線路等の
超高圧系統にも使用されるようになった。
Due to its ease of handling, C-cable began to be used in ultra-high voltage systems such as V-lines in 275.

C■ケーブル本体と一体使用される接続部は低圧のもの
では絶縁テープ巻方式であるが、超高圧のものでは信頼
性、電気性能の面からCVケーブル絶縁体と同材質のポ
リオレフィン絶縁体を用い、これを加熱溶融成形するモ
ールド式接続部が適用される。モールド式接続部は内部
半導電層、外部半導電層、絶縁層の三層で構成される。
C ■ The connection part that is used integrally with the cable body is wrapped with insulating tape for low-voltage cables, but for ultra-high voltage cables, polyolefin insulators made of the same material as the CV cable insulation are used for reliability and electrical performance. , a mold-type connection part is applied that is heated and melt-molded. The molded connection consists of three layers: an inner semiconducting layer, an outer semiconducting layer, and an insulating layer.

一般に、内部半導電層の形式は、半導電性熱収縮チュー
ブあるいはゴム、プラスチック半導電性プレモールドユ
ニットを用いて、後述の絶縁層を加熱溶融モールド成形
するに際して同時に加熱溶融モールド成形することで行
われる。絶縁層の形成は、架橋剤入りポリオレフィン絶
縁体を押出モールド成形するか、架橋剤入りポリオレフ
ィン絶縁デープを纏巻し、更にこれを加熱溶融モーメル
ト成形づるか、あるいは、架橋剤入りポリオレフィン絶
縁ブロックをあてがい、更にこれを加熱溶融モールド成
形するかして行われる。外部半導電層の形成は、絶縁層
成形後当該絶縁層の周上に内部半導電層と同様の材料を
用いて、当該材料を加熱溶融モールド成形することで行
われる。
In general, the internal semiconductive layer is formed using a semiconductive heat-shrinkable tube or a rubber or plastic semiconductive pre-mold unit, which is heat-melt molded at the same time as the insulating layer described below is heat-melt molded. be exposed. The insulating layer is formed by extrusion molding a polyolefin insulator containing a crosslinking agent, by wrapping a polyolefin insulating tape containing a crosslinking agent, and then heating and melting it by molding it with a hot melt mold, or by applying a polyolefin insulating block containing a crosslinking agent. This is further carried out by heating and melting molding. The outer semiconducting layer is formed by using the same material as the inner semiconducting layer on the periphery of the insulating layer after forming the insulating layer, and then heating and melt-molding the material.

しかしながら、この従来の製造法においては、すでに、
架橋化されたモールド成形絶縁層上に外部半導電層モー
ルド成形により形成するものであることから絶縁層に対
して外部半導電層を隙間なく完全に結着一体化させるこ
とがきわめて難しく、時として両者の決着が不完全とな
る恐れがあった。
However, in this conventional manufacturing method,
Since the outer semiconducting layer is formed by molding on a crosslinked molded insulating layer, it is extremely difficult to completely bond and integrate the outer semiconducting layer with the insulating layer without any gaps, and sometimes There was a fear that the settlement between the two parties would be incomplete.

また、当初は良く結着していても、(16間の経過と共
に剥離してしまう恐れがあった。
In addition, even if the adhesive was bonded well at the beginning, there was a risk that it would peel off over time.

なお、絶縁層と外部半導電層との決着が不完全であると
、当該界面においてコロナ放電を起こし易く、従って絶
縁部の電気的信頼性を欠くこととなる。
Note that if the insulating layer and the external semiconducting layer are not completely bound together, corona discharge is likely to occur at the interface, resulting in a lack of electrical reliability of the insulating portion.

本発明の目的は、前述の難点を解消して、電気的信頼性
が大幅に向−トしたCVケーブル用接続部を製造できる
有用なる方法を提供覆ることにある。
SUMMARY OF THE INVENTION It is an object of the present invention to overcome the above-mentioned disadvantages and to provide a useful method for producing connections for CV cables with significantly improved electrical reliability.

本発明の要旨はモールド式接続部の外部半導電層を成形
するに当たり、絶縁層上に架橋剤入り半導電層塗料を塗
布し、しかる後、その上に半導電性熱収縮チューブ、も
しくは半導電性成形シート等をかぶゼ、更にこれを加熱
モールドして絶縁層ど外部半導電層とを一体化すること
にある。
The gist of the present invention is that when molding the external semiconductive layer of a molded connection part, a semiconductive layer paint containing a crosslinking agent is applied on the insulating layer, and then a semiconductive heat shrink tube or a semiconductive The purpose of this method is to overlay a semi-conductive molded sheet or the like, and then heat mold it to integrate it with an external semiconductive layer such as an insulating layer.

次に、添付の図面を参照しながら本発明の一実施例を説
明すると、まず接続づべきCVケーブル3の絶縁体31
をペンシリング処理し、導体接続管1によりCVケーブ
ル3の導体32同士を接続し、その上部に内部半導電層
2を成形づる。
Next, an embodiment of the present invention will be described with reference to the attached drawings. First, the insulator 31 of the CV cable 3 to be connected
The conductors 32 of the CV cable 3 are connected to each other by the conductor connecting tube 1, and the internal semiconducting layer 2 is formed on the top thereof.

内部半導電層3は半導電性ポリオレフィン熱収縮チュー
ブ、もしくは半導電性ポリオレフィン、半導電性ゴム(
半導電性E P R1半導電性塩素化ブチル等)をプレ
モールドユニットにしt=ものにて従来と同様にして成
形される。次に、■配向部半導電層2上に絶縁層4を成
形する。
The internal semiconductive layer 3 is made of semiconductive polyolefin heat shrink tube, semiconductive polyolefin, semiconductive rubber (
A pre-molded unit of semi-conductive EPR1 (semi-conductive chlorinated butyl, etc.) is molded in the same manner as before. Next, (2) an insulating layer 4 is formed on the oriented semiconductive layer 2;

絶縁層4は、架橋剤入りポリオレフィン絶縁体を押出機
により押出成形するか、あるいはテープ状、シート状に
予め成形した架橋剤入りポリオレフィン絶縁体を纏巻し
、更にこれを加熱溶融成形するか、もしくは架橋剤入り
ポリオレフィン絶縁ブロックをあてがい、更にこれを加
熱溶融成形するなどによって架橋形成する。
The insulating layer 4 can be formed by extruding a polyolefin insulator containing a crosslinking agent using an extruder, or by wrapping a polyolefin insulator containing a crosslinking agent previously formed into a tape or sheet shape, and then heating and melt-molding this. Alternatively, crosslinking is formed by applying a polyolefin insulation block containing a crosslinking agent and further heating and melting it.

然る後、上記絶縁層4の表面に架橋剤入り半導電性ポリ
オレフィン塗料を塗布して半導電性塗料塗布層5を設置
ノ、さらに半導電性ポリオレフィン絶縁体もしくはシー
トをかぶせるか、半導電性ポリオレフィン熱収縮チュー
ブをかぶせて、更にこれを加熱モールド成形して外部半
導電層6を形成する。外部半導電層6の加熱モールド成
形は架橋温度(160℃〜200℃)に達してから所要
時間(30分〜2時間)保持後、冷却する。
After that, a semiconductive polyolefin paint containing a crosslinking agent is applied to the surface of the insulating layer 4 to form a semiconductive paint coating layer 5, and a semiconductive polyolefin insulator or sheet is further covered, or a semiconductive polyolefin paint is applied. A polyolefin heat-shrinkable tube is placed over the tube, and the outer semiconductive layer 6 is formed by heat molding. The heat molding of the external semiconductive layer 6 is carried out after reaching the crosslinking temperature (160° C. to 200° C.), which is held for a required period of time (30 minutes to 2 hours), and then cooled.

以上説明したような本発明のCVケーブル接続部の製造
法であれば、絶縁層上に外部半導電層を形成するに当た
って、まず絶縁層の表面に半導電性塗料を塗布し、その
上に任意の半導電性材料を加熱モールド成形することで
行われることから、絶縁層に対する外部半導電層の結着
はきわめて良く、従って、これら両者の界面におけるコ
ロナ放電開始電圧を大幅に向しせしめ得る接続部、即ち
、当該界面の電気的信頼性を大幅に向上せしめ得る接続
部を製造できる。
According to the manufacturing method of the CV cable connection part of the present invention as explained above, when forming the external semiconductive layer on the insulating layer, first, a semiconductive paint is applied to the surface of the insulating layer, and then an optional coating is applied on the surface of the insulating layer. The bonding of the outer semiconducting layer to the insulating layer is very good because it is made by hot molding the semiconducting material of In other words, it is possible to manufacture a connection part that can significantly improve the electrical reliability of the interface.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明のCvケーブル接続部の製造法の一例を示す
説明図である。 1・・・導体接続管、 2・・・内部半導電層。 3・・・CVケーブル、4・・・絶 縁 層。 5・・・半導電性塗料塗布層。 6・・・半導電性ポリオレフィン層。 代理人 弁理士 佐 藤 不二雄 第1頁の続き @発明者永野 宏部
The figure is an explanatory diagram showing an example of the method for manufacturing the Cv cable connection part of the present invention. 1... Conductor connection tube, 2... Internal semiconductive layer. 3...CV cable, 4...insulation layer. 5... Semi-conductive paint coating layer. 6... Semiconductive polyolefin layer. Agent Patent Attorney Fujio Sato Continuation of page 1 @ Inventor Hirobe Nagano

Claims (1)

【特許請求の範囲】[Claims] (1)CVケーブルの導体接続部上にケーブル絶縁体と
同材質のポリオレフィン絶縁体を用いて絶縁層を成形し
、然る後、上記成形絶縁層上に架橋剤入り半導電性塗料
を塗布し、その上に半導電性材料を加熱成形して外部半
導電層を設けることを特徴とするCVケーブル用接続部
の製造法。
(1) Form an insulating layer on the conductor connection part of the CV cable using a polyolefin insulator made of the same material as the cable insulator, and then apply a semiconductive paint containing a crosslinking agent on the formed insulating layer. . A method for manufacturing a connection part for a CV cable, characterized in that an outer semiconducting layer is provided thereon by thermoforming a semiconducting material.
JP60079834A 1985-04-15 1985-04-15 Method of producing connection unit for cv cable Pending JPS60237812A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60079834A JPS60237812A (en) 1985-04-15 1985-04-15 Method of producing connection unit for cv cable

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60079834A JPS60237812A (en) 1985-04-15 1985-04-15 Method of producing connection unit for cv cable

Publications (1)

Publication Number Publication Date
JPS60237812A true JPS60237812A (en) 1985-11-26

Family

ID=13701237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60079834A Pending JPS60237812A (en) 1985-04-15 1985-04-15 Method of producing connection unit for cv cable

Country Status (1)

Country Link
JP (1) JPS60237812A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5456677A (en) * 1977-10-12 1979-05-07 Sumitomo Electric Ind Ltd Manufacture of heat-shrinkable thimble
JPS54118594A (en) * 1978-03-06 1979-09-14 Hitachi Cable Ltd Insulation-reinforced portion for cable and its formation
JPS5523760A (en) * 1978-08-04 1980-02-20 Hitachi Cable Connecting portion of bridged polyethylene insulated cable and method of forming terminal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5456677A (en) * 1977-10-12 1979-05-07 Sumitomo Electric Ind Ltd Manufacture of heat-shrinkable thimble
JPS54118594A (en) * 1978-03-06 1979-09-14 Hitachi Cable Ltd Insulation-reinforced portion for cable and its formation
JPS5523760A (en) * 1978-08-04 1980-02-20 Hitachi Cable Connecting portion of bridged polyethylene insulated cable and method of forming terminal

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