JPS60237329A - High speed light detector - Google Patents
High speed light detectorInfo
- Publication number
- JPS60237329A JPS60237329A JP59094008A JP9400884A JPS60237329A JP S60237329 A JPS60237329 A JP S60237329A JP 59094008 A JP59094008 A JP 59094008A JP 9400884 A JP9400884 A JP 9400884A JP S60237329 A JPS60237329 A JP S60237329A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- high resistance
- layer
- type
- crystal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 210000003240 portal vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は新規な構造を有する高速光検出器に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a high-speed photodetector with a novel structure.
（従来技術とその問題点）
近年、光通信特に高ビツトレイト光通信システムの発達
と今後予想される高速化の進展のため、高い応答速度を
有する光検出器に対する関心が高まっている。１μｍよ
シ長波長の光に対しＳｔ元積検出器感度をもたないため
、ＩｎＰ結晶基板上に形成したＩｎＧｍＡｓまたはＩｎ
ＧａＡｓＰエピタキシアル層をもちいて光ダイオード（
ＰＤ）６るいはアバランシ・光ダイオード（ＡＰＤ）が
製作されていた。この方法によっては、応答速度は光励
起されたキャリアの走行時間によって制約され、たとえ
ば１００９＠＠ｅ以下の応答時間を実現することは容易
でなかった。これに対し量適にいたってＰＩＮ型の構造
をもつダイオードに高い逆方向バイアスを印加し、キャ
リア走行時間を減少せしめ応答時間を短縮せしめる試み
が行なわれつつあシ、この方法によりたとえば５０ ｐ
ｓｅｃ程度の応答速度をもつ高速光検出器が得られてい
る。しかし応答速度を向上せしめると一般に受光面積が
小となシ感度が低下する傾向があった。一方さらに高速
な光検出器は現在得ることは困難である。しかも高速光
検出器は単に光通信の分野のみならず量子エレクトロニ
クスの広い分野において極短光パルスの計測手段として
、出現が待望されているものである。(Prior art and its problems) In recent years, due to the development of optical communications, particularly high bit rate optical communication systems, and the expected future increase in speed, interest in photodetectors with high response speeds has increased. Since the St element detector has no sensitivity to light with a wavelength longer than 1 μm, InGmAs or In
A photodiode (
(PD) 6 or an avalanche photodiode (APD) was manufactured. Depending on this method, the response speed is limited by the transit time of photoexcited carriers, and it is not easy to achieve a response time of, for example, 1009@@e or less. In response, attempts are being made to apply a high reverse bias to a diode with a PIN type structure in an appropriate amount to reduce the carrier transit time and shorten the response time.
A high-speed photodetector with a response speed on the order of seconds has been obtained. However, when the response speed is improved, the light-receiving area generally becomes smaller and the sensitivity tends to decrease. On the other hand, even faster photodetectors are currently difficult to obtain. Moreover, the appearance of high-speed photodetectors is long awaited, not only in the field of optical communications but also in the wide field of quantum electronics as a means of measuring ultrashort optical pulses.
（発明の目的）
本発明は、かかる状況にかんがみ、応答時間がきわめて
知く（７かも尚い量子効率を有する光検出？１
器゛を与えることを目的とする。OBJECTS OF THE INVENTION In view of this situation, it is an object of the present invention to provide a photodetection device with a quantum efficiency of very short response time (7 or even less).
（発明の構成）
本発明の光検出器は、高抵抗結晶基板上にｐｊｎｉｐ・
・・の順で積層した多層構造を備え、この多層構造の両
端に最上層から最下層にまで達するｎおよびｐ領域から
成る導電層をそれぞれ備え、さらに、前記多層構造を形
成するｐおよびｎ層のバンド幅をｉ層のバンド幅よりも
大きいバンド幅とした構成となっている。(Structure of the Invention) The photodetector of the present invention has pjnip on a high resistance crystal substrate.
It has a multilayer structure laminated in the order of . The configuration is such that the bandwidth of the i-layer is larger than that of the i-layer.
（実施例）
本発明の主要な特徴ならびに利点を一層明らかにするた
め以下−実施例について説明をおこなう。(Examples) In order to further clarify the main features and advantages of the present invention, examples will be described below.
図面に示すごとく、高抵抗のＩｎＰ結晶基板上（１）に
比較的高抵抗のバッファーＩｎｐ層（２ンを介して、Ｉ
ｎ：１ｊＧＪ二、＝、＋ Ａｇ３）Ｐにｙン’ｌ （Ｘ
ｌ ＝、２２ Ｙｌ ＝ 、４０ ） のｉ成を有する
厚さ０１μｍのｎ層（３）およびｐ層（４）、およびＩ
ｎｘ２ＧａＩ＝ ＸｔＡｆｉ７ｔＰ１−３’ｔ （Ｘ２
＝ 、 ３３ ＋ −７２＝ 、 ６０ ）の組成を有
する厚さ０．３μｍの高抵抗の光吸収層（５）を順次複
数回数堆積した縦方向構造と最下層のｎ層およびｐ層に
達する深さを有するｎ型（６）およびｐ型（力の信号数
シー用し用チャンネルをもつ構造によシバイアス印加お
よび信号の取り出しを可能ならしめ上部より信号光（８
）を入射せしめる構造を有せしめて光検出器を得る。As shown in the drawing, a relatively high resistance buffer InP layer (2) is placed on a high resistance InP crystal substrate (1) through an I
n: 1jGJ2, =, + Ag3) P to yn'l (X
01 μm thick n-layer (3) and p-layer (4) with i-formation of l = , 22 Yl = , 40 ), and I
nx2GaI=XtAfi7tP1-3't (X2
A vertical structure in which a high-resistance light absorption layer (5) with a thickness of 0.3 μm having a composition of The structure has channels for the n-type (6) and p-type (force signal number sea), which have a 100% power signal, allowing bias bias to be applied and signal extraction.
) to obtain a photodetector.
（発明の効果）
かかるデバイスにおいて、光応答速度は光によシ生成し
たキャリアの走行時間によって決定され、光吸収層の厚
さが薄くバイアス電圧がよ勺高いほど有利である。光吸
収層の厚さが小となると当然吸収される光の割合は低下
するが、多層構造をもたせることによって吸収光の割合
を高めることが可能となる。しかも従来例と比較して受
光面積を犬にすることが可能となるため、量子効率を高
めることができ５０％以上の値を実現することも可能で
ある。(Effects of the Invention) In such a device, the optical response speed is determined by the transit time of carriers generated by light, and it is more advantageous to have a thinner optical absorption layer and a higher bias voltage. As the thickness of the light absorption layer decreases, the proportion of light absorbed naturally decreases, but by providing a multilayer structure, it becomes possible to increase the proportion of absorbed light. Moreover, since it is possible to reduce the light receiving area compared to the conventional example, it is possible to increase the quantum efficiency and achieve a value of 50% or more.
一方印加可能なバイアス電圧の上限はｐ −ｎ接合部の
耐圧によって決定され、両者のキャリア濃度を１０１８
程度まで高めると数Ｖ程度の低い値となるがしかし光吸
収層の厚さを薄くできるため、容易に１０’Ｖ／ｃｍ以
上の電界を生ずることが可能となる。上記の構造をもつ
高速光検出器の場合、応答時間として２０ｐｓｅ程度の
値が実現可能である。On the other hand, the upper limit of the bias voltage that can be applied is determined by the withstand voltage of the p-n junction, and the carrier concentration of both is 1018
If the voltage is increased to a certain level, the value will be as low as several volts, but since the thickness of the light absorption layer can be made thin, it becomes possible to easily generate an electric field of 10'V/cm or more. In the case of a high-speed photodetector having the above structure, a response time of about 20 pse can be achieved.
さらに光吸収層の厚さｔ−０，３μｍあるいはそれ以下
とし、でらに７７°に以下の低温に冷却すれば光励起キ
ャリアのモビリティの上昇の効果のほか、弾道運動に近
い（Ｎｅａｒ ｂａｌｌｉｓｔｉｅ ｍｏｔｉｏｎ ）
状態が実現され、応答速度は著しく早くな軌１０ｐｓｅ
ｃ以下の値を得ることも可能である。かかる性能を有す
る高速光検出器はほかの方法によっては得られないもの
である。Furthermore, if the thickness of the light absorption layer is set to t-0, 3 μm or less, and it is cooled to a low temperature below 77°, in addition to the effect of increasing the mobility of photoexcited carriers, near ballistic motion (near ballistie motion) can be obtained.
state is realized, and the response speed is extremely fast, 10 pse.
It is also possible to obtain values below c. A high-speed photodetector with such performance cannot be obtained by other methods.
混晶の組成比”＋ ＋ ３’！ ＋ ”ｔ −７ｔの数
値は必要とする入射光の波長によって決定がれ、１．３
μｍの波長の元に対してはそれぞれ０．２２ 、０．４
、０．３３および０．６に選ぶのが適当である。この
時１およＵｐ層の吸収は自由キャリアによるものが大部
分を占めほとんと問題にならない大きさとなる。The numerical value of the composition ratio of the mixed crystal "+ + 3'! + "t -7t is determined depending on the wavelength of the required incident light, and is 1.3
0.22 and 0.4 for the wavelength of μm, respectively.
, 0.33 and 0.6. At this time, most of the absorption in the 1 and Up layers is due to free carriers and is of such a magnitude that it hardly poses a problem.
発生した電気信号の取シ出しを行うためには、各ｎおよ
びｐ型層を電気的に連結することが必要であるが、これ
は図面に示したように拡散またはイオン注入によシミ溝
領域を製作するか、あるいは側面を周知の方法によシメ
サエッチングを行い、ｎおよびｐ型層（図示せず）を設
けて信号の取シ出しを行うことも可能である。In order to extract the generated electrical signals, it is necessary to electrically connect each n-type and p-type layer, but this is done by diffusion or ion implantation into the groove region as shown in the drawing. Alternatively, the sides can be etched using a well-known method to provide n- and p-type layers (not shown) for signal extraction.
尚、実施例ではＩｎＰ系の材料について示したが、他の
材料、例えばＧａＡｓ ／ ＡｌＧａＡｓ等でも適用で
きる。この場合は検出する波長範囲がかわる。例えばＧ
ａＡｓ系では０．５〜０．９μｍぐらいになる。In the embodiment, an InP-based material is shown, but other materials such as GaAs/AlGaAs can also be used. In this case, the wavelength range to be detected changes. For example, G
In the aAs system, the thickness is about 0.5 to 0.9 μm.
図面は本発明の高速光検出器の一実施１０の模式％式％
２、ＩｎＰパ、ファ一層
３ Ｉｔ＋ｘ１Ｇｍｌ＝ｘ、Ａｖｙ１Ｐ１＝ｙ、（ｚ、
＝、２２．ｙ、＝＝、４Ｑ）ｎ型層
４、同一組成のｐ型層
５、ＩｎＸ２Ｇａ１−Ｘ１ＡｓＦ２Ｐ１−７２（Ｘ２＝
・３：１７２＝、６０）ｉ型層
６、ｎ型導電チャンネル
７、 ９型導電チヤンネル
８、入射信号光
代理人弁理士 門脈 噛The drawing shows a schematic diagram of one implementation 10 of the high-speed photodetector of the present invention.
=, 22. y, ==, 4Q) n-type layer 4, p-type layer 5 of the same composition, InX2Ga1-X1AsF2P1-72 (X2=
・3:172=,60) I-type layer 6, N-type conductive channel 7, 9-type conductive channel 8, incident signal light agent portal vein
Claims (1)
層構造を備え、この多層構造の両端に最上層から最下層
Ｋまで達するｎおよびｐ領域から成る導電層をそれぞれ
備え、さらに、前記多層構造を形成するｐおよびｎ層の
バンド幅をｉ層のバンド幅よシも大きいバンド幅とした
ことを特徴とする高速光検出器。It has a multilayer structure laminated in the order of pinip... on a high resistance crystal substrate, and conductive layers consisting of n and p regions reaching from the top layer to the bottom layer K are provided at both ends of this multilayer structure, and further, the multilayer A high-speed photodetector characterized in that the bandwidth of the p- and n-layers forming the structure is larger than that of the i-layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59094008A JPS60237329A (en) | 1984-05-11 | 1984-05-11 | High speed light detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59094008A JPS60237329A (en) | 1984-05-11 | 1984-05-11 | High speed light detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60237329A true JPS60237329A (en) | 1985-11-26 |
Family
ID=14098415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59094008A Pending JPS60237329A (en) | 1984-05-11 | 1984-05-11 | High speed light detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60237329A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6364363A (en) * | 1986-09-04 | 1988-03-22 | Toshiba Corp | Infrared solid-state image sensing device |
-
1984
- 1984-05-11 JP JP59094008A patent/JPS60237329A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6364363A (en) * | 1986-09-04 | 1988-03-22 | Toshiba Corp | Infrared solid-state image sensing device |
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