JPS60236273A - Photosemiconductor device - Google Patents
Photosemiconductor deviceInfo
- Publication number
- JPS60236273A JPS60236273A JP59094880A JP9488084A JPS60236273A JP S60236273 A JPS60236273 A JP S60236273A JP 59094880 A JP59094880 A JP 59094880A JP 9488084 A JP9488084 A JP 9488084A JP S60236273 A JPS60236273 A JP S60236273A
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- drive source
- semiconductor element
- frequency drive
- impedance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、主として光通信用の光半導体装置に係り、
!に高周波駆動源にて効率良い光出力が得られる光半導
体装置に関するものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention mainly relates to an optical semiconductor device for optical communication,
! The present invention relates to an optical semiconductor device that can obtain efficient optical output using a high-frequency drive source.
近年1元通信等元倍号による情報処理分野において、レ
ーザダイオードやLED等の光半導体素子が用いられつ
つある。In recent years, optical semiconductor devices such as laser diodes and LEDs are being used in the field of information processing based on single-source communications and multiplexing.
そして、この光半導体素子を高い周波数で変調して使用
すればより多量の情報を伝達処理できる事になり非常に
有効なものである。If this optical semiconductor element is modulated at a high frequency and used, it is possible to transmit and process a larger amount of information, which is very effective.
この様な観点から高周波で光半導体素子全駆動する方法
として第1図に示す様なものが考えられる。第1図にお
いて(1)はレーザダイオードやLED等の光半導体素
子で、この例においては半導体レーザを用いた。(21
(31はこの光半導体素子の端子で。From this point of view, a method as shown in FIG. 1 can be considered as a method of driving all optical semiconductor elements with high frequency. In FIG. 1, (1) is an optical semiconductor element such as a laser diode or an LED, and in this example, a semiconductor laser is used. (21
(31 is the terminal of this optical semiconductor element.
端子(3)は接地式れている。(4)は高周波駆動源。Terminal (3) is grounded. (4) is a high frequency drive source.
(4a)はこの高周波駆動源のインピーダンス、(5)
はこの高周波駆動源(4)と上記光半導体素子の端子(
21との間に接続された負荷抵抗である。(4a) is the impedance of this high frequency drive source, (5)
is the connection between this high frequency drive source (4) and the terminal of the optical semiconductor element (
This is a load resistor connected between 21 and 21.
一方、上記光半導体素子(1)のレーザ発振状態での等
価回路は第2因に示すようになるものである。On the other hand, the equivalent circuit of the optical semiconductor element (1) in the laser oscillation state is as shown in the second factor.
第2図において(1a)は端子(2)及び端子(3)に
それぞれ接続式れたリード電極に基づくり一ドインダク
タンス、(ib)はリード電極と光半導体素子全構成す
るチップの電極との間全接続するワイヤリードインダク
タンス、(1りはレーザ発振動作時のチップの動作抵抗
、(1d) はチップを収納しているパッケージの漂遊
容量である。In Figure 2, (1a) is the linear inductance based on the lead electrodes connected to terminal (2) and terminal (3), respectively, and (ib) is the linear inductance between the lead electrode and the chip electrodes that make up the entire optical semiconductor element. (1) is the operating resistance of the chip during laser oscillation operation, and (1d) is the stray capacitance of the package housing the chip.
この様に構gでれたものにおいて高周波駆動源11+に
て光半導体素子(1)全駆動すると1元半導体素子(1
)力)ら高周波駆動1111f11の周波数に応じて光
出力?I−発生したが、ftS出力が低いものであった
。When the optical semiconductor element (1) is fully driven by the high-frequency drive source 11+ in the device configured in this way, the one-element semiconductor element (1
) power) optical output according to the frequency of the high frequency drive 1111f11? I- occurred, but the ftS output was low.
そこで1発明者らはより多量の情報全伝達できるように
尚周波駆動源fi+からの周波数全変化芒ゼたところ、
第3図に示すような高周波駆動源filからの周波数と
光半導体素子(1)の光出力との関係が得られた。Therefore, the inventors designed a total frequency change from the frequency drive source fi+ in order to transmit a larger amount of information.
The relationship between the frequency from the high frequency drive source fil and the optical output of the optical semiconductor element (1) as shown in FIG. 3 was obtained.
この第3図から判るように高周波駆動源fi+からの出
力が高周波領域になると光半導体素子(11の光出力が
急激に低下してしまうものであった。As can be seen from FIG. 3, when the output from the high frequency drive source fi+ falls into the high frequency range, the optical output of the optical semiconductor element (11) drops rapidly.
このことは高周波駆動源(1)からの周波数が高くなる
ほど、第2図に示した光半導体素子(1)の両端(≧×
32
子囮姪)間のインピーダンスが高くなることに起因する
からである。This means that the higher the frequency from the high-frequency drive source (1), the higher the frequency at both ends (≧×
This is because the impedance between children and nieces increases.
この発明は上記した点に鑑みてなされたものであり、高
周波駆動源と光半導体素子との間に、高周波駆動源の周
波数に対してこの高周波駆動源のインピーダンスとの整
合tとるインピーダンス整合回路全接続して、高い周波
数でも高い光出力が得られる尤半導体装fill提案す
るものである。This invention has been made in view of the above points, and includes an impedance matching circuit between a high-frequency drive source and an optical semiconductor element, which matches the impedance of the high-frequency drive source with respect to the frequency of the high-frequency drive source. We propose a semiconductor device that can be connected to provide high optical output even at high frequencies.
以下にこの発明の一実施例を第4図に基づいて(6)
説明すると図において靭は高周波駆動源(4)と光半導
体素子(1)との間に接続され、高周波駆動源(4)か
らの高い周波数に対して高周波駆動源(4)のインピー
ダンスと整合がとられたインピーダンス整合回路で9元
半導体素子(11と同じパッケージ内に収納されている
ものであり、光半導体素子(11と直列に接続式れたコ
ンデンサ(7)及びインダクタンス素子(8)と光半導
体素子(1)と並列に接続されたコンデンサ(9)とか
ら構a纏れているものである。(l[lは上記(9ン
コンデンサーの一方の電極に接続式れた端子、 (11
1は光半導体素子の端子(3)K接続きれた端子である
。An embodiment of the present invention will be explained below based on FIG. This is an impedance matching circuit that matches the impedance of the high-frequency drive source (4) for high frequencies from It is composed of a capacitor (7) and an inductance element (8) connected in series, an optical semiconductor element (1), and a capacitor (9) connected in parallel. (l [l is The terminal connected to one electrode of the above (9) capacitor, (11
1 is a terminal (3) of the optical semiconductor element, which is connected to the terminal K.
そしてこれら両端子atx uはパッケージ外に露出あ
るいは突出しているものでアリ、光半導体装置としての
端子となるものである。Both terminals atxu are exposed or protrude outside the package, and serve as terminals for the optical semiconductor device.
この様に構成てれた光半導体装置にあっては。In an optical semiconductor device configured in this manner.
高周波駆動源(4)からの高い周波数に対して、インピ
ーダンス整合回路(6)Kより高周波駆動源(4)のイ
ンピーダンスとの整合が行なわれているため、光半導体
素子(11からの光出力の低下はなく、高い光出力が得
られるものである。その結果9光通信等に用いた場合高
い光出力で多量の情報を伝達処理できるものである。Since the high frequency from the high frequency drive source (4) is matched with the impedance of the high frequency drive source (4) by the impedance matching circuit (6)K, the optical output from the optical semiconductor element (11) is There is no decrease in optical output, and a high optical output can be obtained.As a result, when used for 9-optical communication, etc., a large amount of information can be transmitted and processed with high optical output.
しかも1元半導体素子+11とインピーダンス整合回路
(6)と金回−パッケージ内圧収納したので、高周波駆
動源(4)に両端子+1(1(111を接続するだけで
良く。Furthermore, since the one-element semiconductor element +11, the impedance matching circuit (6), and the metal circuit are housed within the package, it is sufficient to connect both terminals +1 (111) to the high-frequency drive source (4).
特別な外部回路を設ける等の必要はなく使い勝手が良い
ものである。There is no need to provide a special external circuit, and it is easy to use.
第5図はこの発明の他の実施例を示すものであり、イン
ピーダンス整合回路(6)凱 光半導体素子に直列に接
続式れるコンデンサα2と、Pih望の分布定数で形成
されるキャパシタンス及びインダクタンスを有した整合
素子a3とで構成したものである。FIG. 5 shows another embodiment of the present invention, in which an impedance matching circuit (6) includes a capacitor α2 connected in series with an optical semiconductor element, and capacitance and inductance formed by a distribution constant of P. The matching element a3 has a matching element a3.
このものにおいても、上記第4図に示した実施例と同様
の効果を奏するものである。This device also provides the same effects as the embodiment shown in FIG. 4 above.
この発明は以上述べたように、1%周波駆動源と光半導
体素子との間に、高周波駆動源と光半導体素子との間に
、高周波駆動源の周波数に対してこの高周波駆動源のイ
ンピーダンスとの整合金とるインピーダンス整合回路全
接続したので、高い周波数でかつ高い光出力が得られる
という効果全有するものである。As described above, this invention provides an arrangement between a 1% frequency drive source and an optical semiconductor element, between a high frequency drive source and an optical semiconductor element, and between a 1% frequency drive source and an optical semiconductor element. Since all the impedance matching circuits are connected, it has the full effect of obtaining a high optical output at a high frequency.
従って、この発明の光半導体装置を光通信等に用いた場
合には高い光出力で多食の情報を伝達処理できるという
効果を有するものである。Therefore, when the optical semiconductor device of the present invention is used for optical communication or the like, it has the effect of being able to transmit and process gluttonous information with high optical output.
第1図は光半導体素子(1)全駆動する回路を示す図、
第2図は光半導体素子の動作状態での等価回路を示す図
、第3図は高周波駆動源(4)の周波数と光半導体素子
+11の光出力との関係を示す図、第4図はこの発明の
一実施例を示す図、第5図はこの発明の他の実施例を示
す図である。
図において(Ifは光半導体素子、(4)は高周波駆動
源、(6)はインピーダンス整合回路である。
なお各図中同一符号は同−又は相当部分會示す。
代理人 大 岩 増 雄(ほか2名)
第 11!2I
周浪数fFig. 1 is a diagram showing a circuit for fully driving the optical semiconductor element (1);
Figure 2 is a diagram showing the equivalent circuit in the operating state of the optical semiconductor element, Figure 3 is a diagram showing the relationship between the frequency of the high-frequency drive source (4) and the optical output of the optical semiconductor element +11, and Figure 4 is a diagram showing this. FIG. 5 is a diagram showing one embodiment of the invention, and FIG. 5 is a diagram showing another embodiment of the invention. In the figures, (If is an optical semiconductor element, (4) is a high-frequency drive source, and (6) is an impedance matching circuit. The same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa et al. 2 people) No. 11!2I Round number f
Claims (1)
周波駆動源の周波数に対してこの高周波駆動源のインピ
ーダンスとの整合ケとるインピーダンス整合回路を接続
したことを特徴とする光半導体装置。 (2) 光半導体素子とインピーダンス整合回路とが同
一パッケージ内圧収納されていることを特徴とする特許
請求の範囲第1項記載の光半導体装置。 (3) インピーダンス整合回路は、光半導体素子に直
列に接続されるコンデンサ及びインダクタンス素子と光
半導体素子に並列に接続されるコンデンサとを有したも
のであることを特徴とする特許請求の範囲第1項又は第
2項記載の光半導体装置。 (4) インピーダンス整合回路は1元半導体素子に直
列に接続されるコンデンサと、所望の分布定数で形成場
れるキャパシタンス及びインダクタンスを有した整合素
子とを有したものとしたことを特徴とする特許請求の範
囲第1項又は第2項記載の光半導体装置。[Claims] +11 An impedance matching circuit is connected between the high-frequency drive source and the optical semiconductor element to match the impedance of the high-frequency drive source to the frequency of the high-frequency drive source. Optical semiconductor device. (2) The optical semiconductor device according to claim 1, wherein the optical semiconductor element and the impedance matching circuit are housed in the same package. (3) The impedance matching circuit includes a capacitor and an inductance element connected in series to the optical semiconductor element, and a capacitor connected in parallel to the optical semiconductor element. 2. The optical semiconductor device according to item 1 or 2. (4) A patent claim characterized in that the impedance matching circuit includes a capacitor connected in series to a one-element semiconductor element, and a matching element having a capacitance and an inductance formed with a desired distribution constant. The optical semiconductor device according to the range 1 or 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59094880A JPS60236273A (en) | 1984-05-09 | 1984-05-09 | Photosemiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59094880A JPS60236273A (en) | 1984-05-09 | 1984-05-09 | Photosemiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60236273A true JPS60236273A (en) | 1985-11-25 |
Family
ID=14122361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59094880A Pending JPS60236273A (en) | 1984-05-09 | 1984-05-09 | Photosemiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60236273A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2621755A1 (en) * | 1987-10-05 | 1989-04-14 | Gen Electric | HIGH FREQUENCY SIGNAL PROCESSING DEVICE AND METHOD OF MANUFACTURING |
FR2621754A1 (en) * | 1987-10-05 | 1989-04-14 | Gen Electric | HIGH SIGNAL GENERATING DEVICE AND METHOD OF MANUFACTURING |
JPH04172427A (en) * | 1990-11-06 | 1992-06-19 | Matsushita Electric Ind Co Ltd | Light wave length converting element and short wave length laser light source |
JPH04279075A (en) * | 1991-03-07 | 1992-10-05 | Yagi Antenna Co Ltd | Laser diode drive circuit |
-
1984
- 1984-05-09 JP JP59094880A patent/JPS60236273A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2621755A1 (en) * | 1987-10-05 | 1989-04-14 | Gen Electric | HIGH FREQUENCY SIGNAL PROCESSING DEVICE AND METHOD OF MANUFACTURING |
FR2621754A1 (en) * | 1987-10-05 | 1989-04-14 | Gen Electric | HIGH SIGNAL GENERATING DEVICE AND METHOD OF MANUFACTURING |
JPH04172427A (en) * | 1990-11-06 | 1992-06-19 | Matsushita Electric Ind Co Ltd | Light wave length converting element and short wave length laser light source |
JP2718259B2 (en) * | 1990-11-06 | 1998-02-25 | 松下電器産業株式会社 | Short wavelength laser light source |
JPH04279075A (en) * | 1991-03-07 | 1992-10-05 | Yagi Antenna Co Ltd | Laser diode drive circuit |
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