JPS60236248A - Forming layer for multilayer wirings - Google Patents
Forming layer for multilayer wiringsInfo
- Publication number
- JPS60236248A JPS60236248A JP59092340A JP9234084A JPS60236248A JP S60236248 A JPS60236248 A JP S60236248A JP 59092340 A JP59092340 A JP 59092340A JP 9234084 A JP9234084 A JP 9234084A JP S60236248 A JPS60236248 A JP S60236248A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- light
- resin
- multilayer wiring
- multilayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims abstract description 42
- 229920005989 resin Polymers 0.000 claims abstract description 22
- 239000011347 resin Substances 0.000 claims abstract description 22
- 239000011229 interlayer Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000004642 Polyimide Substances 0.000 claims abstract description 7
- 229920001721 polyimide Polymers 0.000 claims abstract description 7
- 125000005375 organosiloxane group Chemical group 0.000 claims abstract 2
- 229920002050 silicone resin Polymers 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 238000009835 boiling Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- 239000002861 polymer material Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 238000010408 sweeping Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229920005575 poly(amic acid) Polymers 0.000 abstract description 5
- 239000002952 polymeric resin Substances 0.000 abstract description 5
- 229920003002 synthetic resin Polymers 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 abstract description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 abstract 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 2
- 230000008602 contraction Effects 0.000 abstract 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 abstract 1
- 238000001029 thermal curing Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 238000006462 rearrangement reaction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体集積回路等の多層配線構造に関する。[Detailed description of the invention] Industrial applications The present invention relates to multilayer wiring structures such as semiconductor integrated circuits.
従来例の構成とその問題点
従来、熱硬化性耐熱高分子のパターン形成は次のような
方法で行なわれてきた。Conventional Structure and Problems Conventionally, patterns of thermosetting heat-resistant polymers have been formed by the following method.
(1)樹脂を塗布し溶媒を除去した後、ノオトレジスト
をマスクとしてウェットエツチングする方法。(1) A method in which a resin is applied, a solvent is removed, and then wet etching is performed using a nootresist as a mask.
(2)樹脂を塗布し、溶媒を除去した後、半硬化させて
フォトレジストをマスクとしCF4102プラズマエツ
チング等の方法を用いてドライエツチングする方法。(2) A method in which a resin is applied, the solvent is removed, the resin is semi-cured, and the resin is dry etched using a method such as CF4102 plasma etching using a photoresist as a mask.
(3)樹脂に感光性機能を付与し、溶媒を除いた後、光
を用いて硬化させ現像によってコンタクト孔を形成する
方法。(3) A method in which a photosensitive function is imparted to a resin, the solvent is removed, the resin is cured using light, and a contact hole is formed by development.
(1)〜(3)の方法についてポリイミドを例に挙げ各
々第1図、第2図、第3図を用いて説明する。The methods (1) to (3) will be explained using polyimide as an example and FIG. 1, FIG. 2, and FIG. 3, respectively.
(1)基板1上にポリアミック酸3をスプレー法または
スダンコート法を有いて塗布する。低温熱処理(80°
C〜100°C)L溶媒を除く。塗膜上に通常のホトソ
工程を用いて、マスク4を形成する(第1図(a))。(1) Polyamic acid 3 is applied onto the substrate 1 using a spray method or a sudan coat method. Low temperature heat treatment (80°
C to 100°C) Remove solvent. A mask 4 is formed on the coating film using a normal photolithography process (FIG. 1(a)).
これを、ポジレジスト剥離液やヒドラジン等のアルカリ
溶液を用いてウェットエツチングしく第1図申))、レ
ジストを除去する(第1図(C))。This is wet-etched using a positive resist stripping solution or an alkaline solution such as hydrazine (Fig. 1)) to remove the resist (Fig. 1(C)).
り2)樹脂を塗布し、溶媒を除いた後さらに熱処理を行
なって樹脂を半硬化状態にする。この上部にレジストマ
スク4を形成しく第2図(a))、CF4と02 の混
合ガスを用いて5Torr以下の圧力下でプラズマエツ
チングを行なう(第2図(b) 、 (C) ’)。2) After applying the resin and removing the solvent, heat treatment is performed to bring the resin into a semi-cured state. A resist mask 4 is formed on top of this (FIG. 2(a)), and plasma etching is performed using a mixed gas of CF4 and 02 under a pressure of 5 Torr or less (FIGS. 2(b) and 2(C)').
0)樹脂3を基板1に塗布し溶媒を除いた(第3図(a
) ) 、マスク5を介して紫外線を照射しく第3図中
))、現像によりコンタクト孔を形成する(第3図(C
))。0) Resin 3 was applied to substrate 1 and the solvent was removed (Fig. 3 (a)
) ), irradiate ultraviolet rays through the mask 5 (see Figure 3)) and develop to form contact holes (see Figure 3 (C)).
)).
(1)の方法では、ウェットエツチング特有の横方向へ
のエツチングによりコンタクト孔サイズが大きくなる欠
点がある。また3方法ともコンタクト孔形成後に熱硬化
工程が入るため、体積収縮によるクラックやコンタクト
孔寸法の変化を生じやすくなり、そのため、断線やショ
ートをおこしやすく微細化が困難となる。Method (1) has the disadvantage that the size of the contact hole increases due to the lateral etching characteristic of wet etching. In addition, in all three methods, a thermosetting step is performed after the contact hole is formed, which tends to cause cracks and changes in the contact hole dimensions due to volumetric shrinkage, which makes it easy to cause wire breakage and short circuits, making it difficult to miniaturize.
発明の目的
本発明は耐熱性高分子樹脂の有する優れた平坦化特性、
簡略な製造工程という長所を活かし、上記のような欠点
をなくした層間絶縁膜を形成し、安定したコンタクトを
形成できる多層配線形成方法を捺供する。Purpose of the Invention The present invention provides excellent flattening properties of a heat-resistant polymer resin,
By taking advantage of the simple manufacturing process, the present invention provides a multilayer interconnection forming method that can form an interlayer insulating film that eliminates the above-mentioned drawbacks and form stable contacts.
発明の構成
本発明は層間絶縁膜に耐熱性高分子樹脂を用い、熱処理
によって完全に熱硬化が終了した安定な膜を形成した後
、樹脂の結合を切断し低沸点化合物を生成するに有効な
光を用いてコンタクト孔を形成することを特徴とする・
実施例の説明
ポリアミック酸は熱によって(1)式に示す工つな、・
、・ ・・・(1)
脱水反応がおこりポリイミドになり、筐だオルガノンロ
キサン樹脂は熱によりラダー構造から網目構造となって
、電気特性、耐熱特性、耐溶媒特性、機械特性にすぐれ
た安定した膜となる。しかし、一方その優れた安定性に
より従来のエツチング方法が困難となる。Structure of the Invention The present invention uses a heat-resistant polymer resin for the interlayer insulating film, and after forming a stable film that has been completely thermally cured by heat treatment, the resin is bonded to break and the resin is effectively cured to produce a low-boiling point compound. Polyamic acid is characterized by forming contact holes using light.・Explanation of Examples Polyamic acid is formed by the process shown in formula (1) by heat.・
,...(1) A dehydration reaction occurs to form polyimide, and the organone loxane resin changes from a ladder structure to a network structure due to heat, resulting in a stable structure with excellent electrical, heat-resistant, solvent-resistant, and mechanical properties. It becomes a thin film. However, its excellent stability makes conventional etching methods difficult.
本発明は熱硬化により安定構造となった耐熱性高分子樹
脂を微細加工するため、耐熱性高分子樹脂結合を切断す
るに有効な光エネルギーを利用した。The present invention utilizes light energy that is effective for cutting the bonds of the heat-resistant polymer resin in order to microfabricate the heat-resistant polymer resin that has become a stable structure through thermosetting.
使用する光の活用方法としては■光化学反応(転位反応
、ラジカル反応等)を起こさせる方法C■光を熱に変換
し部分加熱によυ熱分解させる方法。The methods of utilizing the light used are: ■ A method of causing a photochemical reaction (rearrangement reaction, radical reaction, etc.) C. A method of converting light into heat and causing υ thermal decomposition by partial heating.
0分子の共鳴吸収エネルギーを与え電子を励起させて結
合を切断する方法がある。There is a method of applying resonance absorption energy to zero molecules to excite electrons and break bonds.
捷だ、分解反応を促進する条件下で光を照射すれば、さ
らに工程の効率化に役立つ。反応を促進する方法として
は具体的に次のような方法が挙げらi1ル。■CF4.
CCf14.CHF3.CH(43,02CR2゜F2
などの活性なガス中で光を照射することにより、光エネ
ルギーだけでなく、光によって分解した活性ガスの粒子
の衝突も利用して樹脂の結合を切断する方法。■エステ
ル結合、イミド結合、など加水分解されやすい結合を有
する樹脂には、水蒸気中で光を照射することにまゆ、光
分解反応だけでなく加水分解反応を利用して結合を切断
する方法。■基板を加熱し、分子の運動を活発にして光
エネルギーによる結合の切断を容易ならしめる方法。■
減圧にして分解反応生成物である低沸点化合物を反応系
外へ取り除きやすくし、つねに新しい界面が光にさらさ
れるようにする方法。However, irradiating light under conditions that promote the decomposition reaction can further improve the efficiency of the process. Specific methods for promoting the reaction include the following. ■CF4.
CCf14. CHF3. CH(43,02CR2°F2
A method of cutting resin bonds by irradiating light in an active gas such as, using not only the light energy but also the collision of active gas particles decomposed by the light. ■For resins that have bonds that are easily hydrolyzed, such as ester bonds and imide bonds, this method uses not only photolysis reactions but also hydrolysis reactions to cleave the bonds by irradiating light in steam. ■A method in which the substrate is heated to activate the movement of molecules, making it easier to break bonds using light energy. ■
A method in which low-boiling compounds, which are decomposition reaction products, are easily removed from the reaction system by reducing the pressure, and new interfaces are always exposed to light.
次に1本発明の詳細な説明する。Next, one aspect of the present invention will be explained in detail.
第1配線2を形成した半導体基板1上にポリアミック酸
(PIQ、日立化成)を塗布し熱処理(100°CX1
h−1−20σCX1h+350℃X 1 h ln
N2 ) により硬化させてポリイミド3とする。この
ポリイミドに所定のマスク5を介してエキシマレーザ−
を照射しコンタクト孔を形成する。このときのエツチン
グ速度は、1100人/min であった。この上部に
蒸着により八2 を形成し、通常のホトン工程を用いて
レジストマスクをした後、CC24を用いてエツチング
し、第2配線6を形成する。Polyamic acid (PIQ, Hitachi Chemical) is coated on the semiconductor substrate 1 on which the first wiring 2 is formed and heat treated (100°C
h-1-20σCX1h+350℃X 1 h ln
Polyimide 3 is obtained by curing with N2). An excimer laser is applied to this polyimide through a predetermined mask 5.
is irradiated to form a contact hole. The etching speed at this time was 1100 people/min. A layer 82 is formed on this upper portion by vapor deposition, a resist mask is applied using a normal photon process, and a second wiring 6 is formed by etching using CC24.
同様の樹脂を用いて、水蒸気中で行なうとエツチング速
度は、2460人/ruin となり、CF4中で行な
うと3010人/min となった。Using the same resin, the etching rate was 2460 etching/run in steam and 3010 etching/min in CF4.
発明の効果
本発明により、層間絶縁膜に熱硬化性耐熱高分子材料を
用いた多層配線における従来の問題点であった、コンタ
クト孔形成後の熱硬化に伴う体積収縮によって生じるコ
ンタクト孔寸法の変化やクラックの発生を防止し、高分
子材料の平坦化特性や工程の簡略さを活かした歩留りの
高い、微細加工の容易な多層配線を形成することができ
る。また、コンタクト孔形成工程を前述した条件下で行
なうことにより作業の効率を向上させることができる。Effects of the Invention The present invention eliminates the change in contact hole dimensions caused by volume shrinkage due to thermosetting after contact hole formation, which was a conventional problem in multilayer wiring using thermosetting heat-resistant polymer materials for interlayer insulating films. It is possible to form a multilayer interconnection that is easy to microfabricate and has a high yield while preventing the occurrence of cracks and cracks and taking advantage of the flattening properties of the polymer material and the simplicity of the process. Further, by performing the contact hole forming step under the above-described conditions, the efficiency of the work can be improved.
第1図ia) −fc) 、第2図ta) −fc)、
第3図(a) −fc)Vi従来のコンタクト孔形成工
程断面図、第4図(−)〜(C1は本発明の一実施例の
多層配線形成工程断面図である。
1・・・・・基板、2・・・・・第1配線、3・・・・
層間絶縁膜、6・・・マスク、6・・・・第2配線。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名第
1 図
((]
第2図
第3図
1b) /
第4図
二]ヨヨ代
□□−−/
(a)
NJJJ
−と
y’ 2
一二亮6
□−(
tc)
9〇八
W″
!
/
」
!
L″Figure 1 ia) -fc), Figure 2 ta) -fc),
FIG. 3(a)-fc)Vi is a sectional view of a conventional contact hole forming process, and FIGS. 4(-) to (C1 are sectional views of a multilayer wiring forming process of an embodiment of the present invention. 1...・Substrate, 2...First wiring, 3...
Interlayer insulating film, 6... mask, 6... second wiring. Name of agent: Patent attorney Toshio Nakao and 1 other person
1 Figure ((] Figure 2 Figure 3 1b) / Figure 4 2] Yoyodai □□--/ (a) NJJJ - and y' 2 Ryo 12 6 □-(tc) 908W''! / ”! L″
Claims (1)
る層間絶縁膜に熱硬化性耐熱高分子材料を用い、前期樹
脂を基板上に塗布する工程、前記樹脂を加熱硬化させる
工程、硬化後の耐熱高分子材料の結合を切断し低沸点化
合物を生成するに有効な波長を有する光を用いて前期層
間絶縁膜に:jノンタクト孔形成する工程を有すること
を特徴とする多層配線形成方法。 ?)層間絶縁膜にポリイミドを用いることを特徴とする
特許請求の範囲第1項記載の多層配線形成方法。 (3ン 層r!1jJe縁膜にオルガノシロキサン樹脂
またはシリコン樹脂を用いることを特徴とする特許請求
の範囲第1項記載の多層配線形成方法。 (4)所定のマスクを介して光を照射することを特徴と
する特許請求の範囲第1項記載の多層配線形成方法。 (6)光を掃引照射することを特徴とする特許請求の範
囲第1項記載の多層配線形成方法。 向 複数の異なる波長の光を用いたことを特徴とする特
許請求の範囲第1項記載の多層配線形成方法。 (′7)多層配線構造を形成するに際し、層間絶縁膜と
なる熱硬化性耐熱高分子材料を基板に塗布する工程、前
記塗布膜を加熱し硬化させ、る工程、前記樹脂の結合を
切断し低沸点化合物を生成させるに有効な光を分解反応
が促進される条件下で照射し、コンタクト孔を形成する
工程を有することを特徴とする多層配線形成方法。 @)活性ガス中で光を照射することを特徴とする特許請
求の範囲第7負記載の多層配線形成方法。 枠)水蒸気雰囲気中で、光を照射することを特徴とする
特許請求の範囲第7項記載の多層配線形成方法。 0 (勃)基板を加熱しながら光を照射することを特徴とす
る特許請求の範囲第7項記載の多層配線形成方法。 (11)減圧下で光を照射することを特徴とする特許請
求の範囲第7項記載の多層配線形成方法。[Claims] (1) When forming a multilayer wiring structure, a thermosetting heat-resistant polymer material is used as an interlayer insulating film that separates wiring, and a step of applying a resin on a substrate, heating the resin. A curing step, and a step of forming non-tact holes in the interlayer insulating film using light having a wavelength effective for cutting bonds in the heat-resistant polymeric material after curing and generating a low boiling point compound. Multilayer wiring formation method. ? 2.) The multilayer wiring forming method according to claim 1, wherein polyimide is used for the interlayer insulating film. (3) The multilayer wiring forming method according to claim 1, characterized in that an organosiloxane resin or a silicone resin is used for the layer r!1jJe edge film. (4) Irradiating light through a predetermined mask. A method for forming a multilayer wiring according to claim 1, characterized in that: (6) A method for forming a multilayer wiring according to claim 1, characterized in that the light is irradiated in a sweeping manner. A method for forming a multilayer wiring according to claim 1, characterized in that light having a wavelength of A step of coating the substrate, a step of heating and curing the coating film, and a step of irradiating the contact hole with light effective to break the bonds of the resin and generate a low boiling point compound under conditions that promote the decomposition reaction. A method for forming a multilayer interconnection, comprising the step of forming a multilayer interconnection.@) A method for forming a multilayer interconnection according to the negative aspect of claim 7, characterized by irradiating light in an active gas. Frame) The multilayer wiring forming method according to claim 7, characterized in that light is irradiated in a water vapor atmosphere. 0. The multilayer wiring forming method according to claim 7, characterized in that the substrate is irradiated with light while being heated. (11) The multilayer wiring forming method according to claim 7, characterized in that the light is irradiated under reduced pressure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59092340A JPS60236248A (en) | 1984-05-09 | 1984-05-09 | Forming layer for multilayer wirings |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59092340A JPS60236248A (en) | 1984-05-09 | 1984-05-09 | Forming layer for multilayer wirings |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60236248A true JPS60236248A (en) | 1985-11-25 |
Family
ID=14051662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59092340A Pending JPS60236248A (en) | 1984-05-09 | 1984-05-09 | Forming layer for multilayer wirings |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60236248A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0222618A2 (en) * | 1985-11-12 | 1987-05-20 | Engelhard Corporation | Multilayer hybrid integrated circuit and process for producing |
US4855252A (en) * | 1988-08-22 | 1989-08-08 | International Business Machines Corporation | Process for making self-aligned contacts |
JPH02102071A (en) * | 1988-10-11 | 1990-04-13 | Olympus Optical Co Ltd | Manufacture of ion flow recording head |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5969931A (en) * | 1982-10-07 | 1984-04-20 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of etching polyimide with far ultraviolet rays |
-
1984
- 1984-05-09 JP JP59092340A patent/JPS60236248A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5969931A (en) * | 1982-10-07 | 1984-04-20 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of etching polyimide with far ultraviolet rays |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0222618A2 (en) * | 1985-11-12 | 1987-05-20 | Engelhard Corporation | Multilayer hybrid integrated circuit and process for producing |
US4855252A (en) * | 1988-08-22 | 1989-08-08 | International Business Machines Corporation | Process for making self-aligned contacts |
JPH02102071A (en) * | 1988-10-11 | 1990-04-13 | Olympus Optical Co Ltd | Manufacture of ion flow recording head |
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