JPS60234864A - Thermal head - Google Patents

Thermal head

Info

Publication number
JPS60234864A
JPS60234864A JP59092127A JP9212784A JPS60234864A JP S60234864 A JPS60234864 A JP S60234864A JP 59092127 A JP59092127 A JP 59092127A JP 9212784 A JP9212784 A JP 9212784A JP S60234864 A JPS60234864 A JP S60234864A
Authority
JP
Japan
Prior art keywords
conductor
width
individual
thermal head
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59092127A
Other languages
Japanese (ja)
Inventor
Yoshihiko Sato
佐藤 恵彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59092127A priority Critical patent/JPS60234864A/en
Publication of JPS60234864A publication Critical patent/JPS60234864A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/315Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
    • B41J2/32Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
    • B41J2/345Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads characterised by the arrangement of resistors or conductors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0213Electrical arrangements not otherwise provided for

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To ensure a moderate length of bonding wire while allowing uniformization of printing record density by varying the pattern width of an individual conductor by several stages in a conductor resistance correction area. CONSTITUTION:In an ''n'' area of individual conductors L1-Lm connected to resistors R1-Rm, when the individual conductors are formed with the pattern with less than that of those contacting heating resistors, the pattern width is varied by several staircases or monotonously in the single conductor so as to uniformize the conductor resistors of the individual conductors L1-Lm. That is, in a conductor resistance correction area ''n'', the smallest pattern width at the lower part is set at 0.04mm., a value which will not lower the yield in practice while the area ''W'' is provided with an intermediate pattern width at the upper part. For example, the pattern width of the area is set at 0.08mm. and in the discrete conductors contacting the resistance, the pattern width at 0.115mm..

Description

【発明の詳細な説明】 本発明は、サーマルヘッドに関し、とくにその導電体の
形状に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thermal head, and particularly to the shape of its conductor.

以下、従来例を図面を参照して説明する。A conventional example will be described below with reference to the drawings.

第1図はラインプリンタ用サーマルヘッドの要部平面図
例を示す。同図において、単一のドライバ用ICに接続
される発熱抵抗体R1〜Rmは、共通電極Cから短冊形
に分岐した導電体C,−C,,,に接続して形成される
。抵抗体の他端には多数の個別導電体L1〜Lmが接続
され、これらの個別溝”電体はICのボンディング端子
T1〜Tmまで延長して形成される。個別導電体上には
絶縁層を介して破線で示すICが搭載される。また所望
によりボンディング端子の外側には記録電流を接地する
ための端子及び導電体が設けられる。本構造を基本形と
して基板上に多数配置したものがラインプリンタ用サー
マルヘッドである。
FIG. 1 shows an example of a plan view of essential parts of a thermal head for a line printer. In the same figure, heating resistors R1 to Rm connected to a single driver IC are connected to conductors C, -C, . . . branched into strips from a common electrode C. A large number of individual conductors L1 to Lm are connected to the other end of the resistor, and these individual groove conductors are formed to extend to the bonding terminals T1 to Tm of the IC.An insulating layer is formed on the individual conductors. An IC indicated by a broken line is mounted through the bonding terminal.If desired, a terminal and a conductor for grounding the recording current are provided on the outside of the bonding terminal.This structure is the basic form and many arranged on a substrate are used as a line. This is a thermal head for printers.

さて、総抵抗体本数が1728本であり、解像度が8本
/rttpnであるA4版サーマルヘッドを一例として
説明する。単一のICが32本の抵抗体を駆動する場合
(m=32)には、該ICは4. Ownのピッチで合
計54個基板上に配置される。またm=64の場合には
、ICは30mmのピッチで合計27個基板上に配置さ
れる。
Now, an A4-size thermal head having a total number of resistors of 1728 and a resolution of 8 resistors/rttpn will be explained as an example. If a single IC drives 32 resistors (m=32), then the IC is 4. A total of 54 pieces are arranged on the board at an own pitch. When m=64, a total of 27 ICs are arranged on the substrate at a pitch of 30 mm.

ここでm;64とし、抵抗体R1〜Rmのバタン幅を各
々0.115mmとし、抵抗体の間隙を0.01++m
とすると %Sa“で示す距離は7.99mmとなる。
Here, m is 64, the width of each resistor R1 to Rm is 0.115 mm, and the gap between the resistors is 0.01++ m.
Then, the distance indicated by %Sa" is 7.99 mm.

また (%b“で示す距離は&0■であり、ボンデ゛ 
イング端子T1〜Tmの寸法′″l“とじては望ましく
は各々0.5 mが必要とされる。従ってV″S“で示
す領域の個別導電体L1〜Lmのバタン幅は、隣接した
T1とTmの間隙を0.1 mとすると残りの幅を均等
配分し、(7,9−0,5X2)÷64#0.107以
下となる。即ちバタン間隙を0.017とすれば、バタ
ン幅は各々凡そ0.09mとなり、抵抗体R1−几mと
接する領域の個別導電体幅0.115mmの78−程度
となる。ボンディング端子TpをTB、TmをT64と
すると導電体幅の狭い領域“S”はT32及びTBSが
最も長く、TI及びT64が最も短かくなり、従ってL
1tI164の導体抵抗はI” 3! + L 33の
導体抵抗よりも数オーム程度低い値となる。例えば、こ
こで導体抵抗の差を50とし、几、〜Rmの抵抗値を3
000とすると、電源電圧12Vの定格動作において5
Ωの抵抗偏差は0.OIWの電力偏差となり、サーマル
ヘッドの印字記録濃度に周期性の濃度偏差をもたらす。
Also, the distance indicated by (%b) is &0■, and the bond
The dimensions of the leading terminals T1 to Tm are preferably 0.5 m each. Therefore, if the gap between adjacent T1 and Tm is 0.1 m, the batten width of the individual conductors L1 to Lm in the area indicated by V"S" is calculated as follows: (7,9-0,5X2 )÷64#0.107 or less. That is, if the batten gap is 0.017, the batten width is approximately 0.09 m, and the width of the individual conductor in the area in contact with the resistor R1-m is approximately 78 mm, which is 0.115 mm. When bonding terminal Tp is TB and Tm is T64, in the narrow conductor width region "S", T32 and TBS are the longest and TI and T64 are the shortest, so L
The conductor resistance of 1tI164 is several ohms lower than the conductor resistance of I" 3! + L 33. For example, if the difference in conductor resistance is 50, then the resistance value of
000, 5 at rated operation with a power supply voltage of 12V.
The resistance deviation of Ω is 0. This becomes a power deviation of the OIW, and causes a periodic density deviation in the print recording density of the thermal head.

即ち27個のICの端子Tp、Tqに相当する部分に接
続された抵抗体によって記録された印字濃度は最も低く
、Ts=Tmに相当する部分に接続された抵抗体によっ
て記録された印字濃度は最も高くなる。
In other words, the print density recorded by the resistor connected to the portion corresponding to the terminals Tp and Tq of the 27 ICs is the lowest, and the print density recorded by the resistor connected to the portion corresponding to Ts=Tm is the lowest. Become the highest.

このような欠点を除去する手法として、例えば特願昭5
8−185428にある如く、導電体L1〜Lmの導体
抵抗を均一化する方法が一般に用いられる。即ち、第1
図に示すように抵抗体几1〜几mに接続される個別導電
体L1〜LmのIC搭載部側に、抵抗部と接するバタン
幅(例えば、引例し九〇、M5ms+)よりも小さい幅
の導体抵抗補正領域V″n“を設けるものであり IN
n“の領域のバタン幅は、例えば上記引例の0.09W
+とすることができる。この1n“の領域を例えばT1
及びTmと接続する個別導電体Ll及びLmの場合には
最も長くとり、TlまたはTmからTpまたはTqに近
づくにつれて順次単調に短か<L、Tp及びTqの場合
には最も短かくとることにより、個別導電体L1〜Lm
の導体抵抗偏差を1Ω以下と均一化することができる。
As a method to eliminate such drawbacks, for example, the patent application
8-185428, a method of equalizing the conductor resistance of the conductors L1 to Lm is generally used. That is, the first
As shown in the figure, on the IC mounting part side of the individual conductors L1 to Lm connected to the resistor parts 1 to 1m, a width smaller than the width of the button in contact with the resistor part (for example, 90, M5ms+ as cited) is attached. A conductor resistance correction area V″n″ is provided.
The width of the button in the area n'' is, for example, 0.09W in the above cited example.
It can be set as +. For example, this 1n" area is T1
In the case of the individual conductors Ll and Lm connected to Tm and Tm, the longest length is taken, and as it approaches Tp or Tq from Tl or Tm, the length is monotonically shortened, or if <L, Tp and Tq, the shortest length is taken. , individual conductors L1 to Lm
The conductor resistance deviation can be made uniform to 1Ω or less.

しかしながらm=64.即ち単一のICが64本の抵抗
体を駆動する場合には %Sn“で示す寸法が長くなり
、ひいてはサーマルヘッドの基板幅が広くなる欠点があ
った。例えば隣接した抵抗体間の“n“の寸法差を0.
3 tmとすると、m=32の場合の%%、“寸法は0
.3w+IX(32/2−1);4.5咽程度となるの
に対し、m=64の場合の1n“寸法は0.3 wn 
X (64/2−1 ) ”; 9.3ml11程度と
大巾に広くなるものであり、製造されるサーマルヘッド
の幅寸法は実質上、導体抵抗補正領域の長さによって制
限されるものであった。また、この補正領域の長さを従
来と同程度にするために、隣接した抵抗体間の′X″n
“の寸法差を従来の半分とすると、導体抵抗の補正が不
完全なために製造されるサーマルヘッドは上記周期性の
記録印字濃度をもたらすものであった。
However, m=64. In other words, when a single IC drives 64 resistors, the dimension indicated by %Sn becomes long, which in turn increases the substrate width of the thermal head.For example, the width of the substrate between adjacent resistors increases. “Difference in dimension is 0.
3 tm, %% when m = 32, “dimension is 0
.. 3w + IX (32/2-1); it is about 4.5 wn, whereas the 1n" dimension in the case of m = 64 is 0.3 wn
X (64/2-1) ”: It has a large width of about 9.3ml11, and the width of the manufactured thermal head is essentially limited by the length of the conductor resistance correction area. In addition, in order to make the length of this correction region similar to the conventional one, 'X''n between adjacent resistors was
If the dimensional difference in " is reduced to half of the conventional one, the thermal head manufactured due to incomplete correction of the conductor resistance results in the above-mentioned periodic recording print density.

これらの欠点を除去するために、例えば昭和59年3月
26日に本願と同一出願人によりすでに出願されている
如く、TlからTp部へ、あるいはTmからTq部へ個
別導電体が移行するにつれて、即ち搭載ICのセンタ側
へ個別導電体が近づくにつれて、IC上の電極から基板
上のホンディング端子までのポンディングワイヤ長を順
次短かくし、もって“n“の導体抵抗補正領域の長さを
短かくする手法もサーマルヘッドには採用されている。
In order to eliminate these drawbacks, as the individual conductor moves from Tl to Tp section or from Tm to Tq section, as already filed by the same applicant as the present application on March 26, 1980, In other words, as the individual conductor approaches the center side of the mounted IC, the length of the bonding wire from the electrode on the IC to the bonding terminal on the board is gradually shortened, thereby reducing the length of the "n" conductor resistance correction region. A shortening method is also used for thermal heads.

即ち第1図において、TI+T1またはTm 、 Tm
−1からT3.T、またはTm −1、Tm−5へ個別
導電体が移行すると、後者の個別導電体は距離が0.3
簡程度短かくなるために導体抵抗が小さくなり、従って
導体抵抗補正領域の全長ゞn”が短かくなるものである
That is, in FIG. 1, TI+T1 or Tm, Tm
-1 to T3. When the individual conductor moves to T, Tm-1, Tm-5, the distance of the latter individual conductor is 0.3
Since the conductor resistance is shortened to a certain extent, the conductor resistance is reduced, and therefore the total length n'' of the conductor resistance correction region is shortened.

しかしながら、この手法によるサーマルヘッドにおいて
は、IC上の電極からTIまたはTm iでのボンディ
ングワイヤ長が最も長<、TpまたはTqまでのボンデ
ィングワイヤ長が最も短かくなるものであり、特にT、
またはTmまでのボンディング長は実用上許容できる長
さよりも過度に長くなることは避は得られなかったもの
である。
However, in the thermal head using this method, the bonding wire length from the electrode on the IC to TI or Tmi is the longest, and the bonding wire length from Tp or Tq is the shortest.
Alternatively, it is inevitable that the bonding length up to Tm will be excessively longer than a practically allowable length.

即ちICの幅寸法を2rtasとすると、m=64の場
合のボンディング長は最大(7,9−9−2)/2≠3
鵡となり、実用上許容できる2m+n長よりも50チ程
距離が長くなる。長いボンディングワイヤは搭載ICの
端面と接触しおるいは基板上の配線とショートし、製造
されるサーマルヘッドの歩留りを低下させるものであっ
た。この欠点を除去するために“S“領域の個別導体の
バタン幅を小さくすると、”n“領域の導体抵抗補正領
域が長くなりサーマルヘッドの基板中が広くなるもので
あった。
In other words, if the width of the IC is 2rtas, the maximum bonding length when m=64 is (7,9-9-2)/2≠3
This makes the distance approximately 50 inches longer than the practically acceptable length of 2m+n. Long bonding wires come into contact with the end face of the mounted IC or short-circuit with the wiring on the substrate, reducing the yield of manufactured thermal heads. In order to eliminate this drawback, if the width of the individual conductor in the "S" region is made smaller, the conductor resistance correction region in the "n" region becomes longer and the substrate of the thermal head becomes wider.

従って本発明の目的は、ICの電極と基板上の端子とを
接続するボンディングワイヤ長を適度な長さとし、而も
印字記録一度を均一化できる小型化サーマルヘッドを提
供するものでおる。
Therefore, an object of the present invention is to provide a miniaturized thermal head that can make the length of the bonding wire that connects the electrodes of an IC and the terminals on the substrate to be appropriate, and can uniformly print and record once.

本発明によれば発熱抵抗体に接続され、かつICのボン
ディング端子にまで延長して形成され、バタン幅を抵抗
体と接する部分よりも狭くした導体抵抗補正領域を有す
る個別導電体において、導体抵抗補正領域の個別導電体
のバタン幅を複数段可変させてICの中央側に配置され
る個別導電体においては実効的にバタン幅を広く形成し
、ICの端面側に配置される個別導電体においては実効
的にバタン幅を狭く形成することを特徴とするサーマル
ヘッドが得られる。
According to the present invention, in an individual conductor that is connected to a heating resistor, is formed to extend to a bonding terminal of an IC, and has a conductor resistance correction region having a batten width narrower than a portion in contact with the resistor, a conductor resistance The width of the button of the individual conductor in the correction region is varied in multiple steps, so that the width of the button is effectively widened for the individual conductor placed on the center side of the IC, and the width of the button is effectively widened for the individual conductor placed on the end face side of the IC. According to the present invention, a thermal head is obtained which is characterized in that the batten width is effectively narrowed.

また本発明によれば発熱抵抗体に接続され、か。Also, according to the present invention, it is connected to the heating resistor.

つ絶縁層を介してICの下面に配置される狭い導体幅の
領域を具備しICのボンディング端子にまで延長して形
成される個別導電体において、上記狭い導体幅領域の個
別導電体のバタン幅を複数段可変させてICの中央側に
配置される個別導電体においては実効的にバタン幅を広
く形成し、ICの端面側に配置される個別導電体におい
ては実効的にバタン幅を狭く形成することを特徴とする
サーマルヘッドをも得られる。
In an individual conductor formed with a narrow conductor width region disposed on the bottom surface of an IC via an insulating layer and extending to a bonding terminal of the IC, the button width of the individual conductor in the narrow conductor width region By varying the width in multiple steps, the width of the batten is effectively made wider for the individual conductors placed on the center side of the IC, and the width of the batten is effectively made narrower for the individual conductors placed on the edge side of the IC. It is also possible to obtain a thermal head characterized by the following.

以下図面にそって本発明の一実施例を説明する。An embodiment of the present invention will be described below with reference to the drawings.

第2図は抵抗体fL1〜Rmに接続される個別導電体L
1〜Lmの1n“の領域において、発熱抵抗体と接する
個別導電体のバタン幅よりも狭いバタン幅に個別導電体
を形成するに際し、そのバタン幅を単一の個別導電体に
おいて複数段階段状にあるいは単調に変えるものであり
、もって個別導電体り、〜Lmの導体抵抗を均一化した
ものである。即ち、導体抵抗補正領域1n“内において
、下方の最も細いバタン幅は実用上製造歩留りを低下さ
せない値である0、04+++n+とじ、上方には中間
のバタン幅を有する領域“W“を設け、例えばその領域
のバタン幅を0.08m+とじ、抵抗と接する個別導電
体においてはバタン幅を例えば0.115W+としたも
のであり、TpまたはTqに接続される最も長い距離の
個別導電体においては実効的に導体幅全床く形成して導
体抵抗を小さくL、TtまたはTmに接続される最も短
かい距離の個別導電体においCは、導体幅を歩留りを低
下させない最小寸法に制限しつつ実効的に導体幅を狭く
して導体抵抗を高めたものである。従ってIC下面の個
別導i1体幅寸法v″d ” ’に従来ノ(7,9−0
,5X2 )= 6.9 wn程度から3鵡程度にまで
下げても導体抵抗補正領域′″n”の長さは従来と同程
度にすることができた。この結果、ボンディングワイヤ
長は最大でも2、5 van以下とすることができ、殆
どのボンディングワイ、ヤ長は実用上理想的な1〜2m
の距離とすることができた。
Figure 2 shows individual conductors L connected to resistors fL1 to Rm.
In the region of 1n'' from 1 to Lm, when forming the individual conductor to have a batten width narrower than the batten width of the individual conductor in contact with the heat generating resistor, the batten width is formed in a plurality of steps in a single individual conductor. In other words, within the conductor resistance correction region 1n'', the narrowest width at the bottom is determined by the manufacturing yield in practical terms. 0, 04+++n+, which is a value that does not reduce For example, it is set to 0.115W+, and in the longest distance individual conductor connected to Tp or Tq, the entire conductor width is effectively formed to reduce the conductor resistance and connected to L, Tt or Tm. Among the individual conductors having the shortest distance, C is one in which the conductor width is effectively narrowed while limiting the conductor width to the minimum dimension that does not reduce the yield, thereby increasing the conductor resistance. Therefore, the width dimension of the individual conductor i1 on the bottom surface of the IC v″d″
, 5×2 )=6.9wn Even if the length was lowered from about 3 wn, the length of the conductor resistance correction region ''n'' could be kept at the same level as the conventional one. As a result, the bonding wire length can be reduced to 2.5 van or less at most, and most bonding wires and wires have a length of 1 to 2 m, which is ideal for practical use.
The distance could be as follows.

従って本発明のサーマルヘッドは、適度な長さのボンデ
ィングワイヤ長で製造され導体幅寸法も適度に設定され
ているために製造歩留りが高く、而も最小寸法の導体抵
抗補正領域で個別導電体の導体抵抗が均一化されるため
に小型であり、均一な記録印字濃度を提供することがで
きる。
Therefore, the thermal head of the present invention has a high manufacturing yield because it is manufactured with an appropriate length of bonding wire and the conductor width dimension is also set appropriately, and the thermal head has a high manufacturing yield. Since the conductor resistance is made uniform, it is compact and can provide uniform recording print density.

本発明は導体幅を小さくして記録の解像度を高めたり個
別導電体の膜厚を小さくした場合、卸ち単位長さ当りの
導体抵抗が高くなった場合に効果が顕著となる。
The effect of the present invention becomes significant when the conductor width is reduced to improve the recording resolution or when the film thickness of the individual conductor is reduced, or when the conductor resistance per unit length is increased.

本発明が上記の効果を呈する以上、個別導電体の材質や
膜厚、バタン幅、v′n“及び“W“領域でバタン幅を
狭く(広く)するステップ数、あるいは狭く(広く)す
る方法(階段状変化あるいは単調変化)、単一のICが
駆動できる抵抗体本数。
Since the present invention exhibits the above effects, the material and film thickness of the individual conductor, the batten width, the number of steps for narrowing (widening) the batten width in the v′n" and "W" regions, or the method for narrowing (widening) (step change or monotonous change), the number of resistors that a single IC can drive.

発熱抵抗体の解像度等、何ら制約されるものではないこ
とは当然であり、本発明のサーマルヘッドの用途も特に
限定されるべきものではなく、ラインヘッド、シリアル
ヘッド等に用いることも当然できる。また本発明はボン
ディング端子面を順次IC側へ近づけ、ボンディング端
子が短かく形成されたために生じた間隙に1発熱抵抗体
に流れた記録電流を接地するための導電体を任意の形状
に設けることもできる。更Kまた、本発明はバタン幅の
狭いS“領域やIC搭載部下面の個別導電体にも適用で
きる。
Naturally, there are no restrictions on the resolution of the heat generating resistor, etc., and the application of the thermal head of the present invention is not particularly limited either, and it can naturally be used in line heads, serial heads, etc. Furthermore, the present invention brings the bonding terminal surface closer to the IC side one by one, and provides a conductor in an arbitrary shape in the gap created by the short bonding terminal for grounding the recording current flowing through the one heating resistor. You can also do it. Moreover, the present invention can be applied to the S" area with a narrow button width and to individual conductors on the lower surface of an IC mounting area.

本発明において、例えば中間のバタン幅を有する領域%
 w IIを発熱抵抗体几から同一の寸法下がりた位置
から形成し始めてもよいことは勿論であり、該バタン幅
をL1〜Lmで相互に違えることもできる。
In the present invention, for example, the area % having an intermediate batten width
It goes without saying that the formation of wII may start from a position that is the same size lower than the heating resistor box, and the widths of the tabs may be mutually different from L1 to Lm.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来例の要部を示す平面図。第2図は本発明の
一実施例の要部を示す平面図。 C(C,〜Cm)・・・・・・共通電極、 FL、〜R
m・・・・・・発熱抵抗体、LL−Lm・・・・・・個
別導電体s ’ T l〜Tm・・・・・・ボンディン
グ端子、S領域・・・・・・導体幅の狭い領域、n領域
・・・・・・導体抵抗補正領域、W領域・・・・・・中
間導体幅導体抵抗補正領域。 ht 国 第 2 閃
FIG. 1 is a plan view showing the main parts of a conventional example. FIG. 2 is a plan view showing essential parts of an embodiment of the present invention. C (C, ~Cm)... Common electrode, FL, ~R
m...Heating resistor, LL-Lm...Individual conductor s' Tl~Tm...Bonding terminal, S region...Narrow conductor width area, n area...conductor resistance correction area, W area...intermediate conductor width conductor resistance correction area. ht country 2nd flash

Claims (2)

【特許請求の範囲】[Claims] (1)発熱抵抗体に接続され、かつICのボンディング
端子にまで延長して形成され、バタン幅を抵抗体と接す
る部分よりも狭くした導体抵抗補正領域を有する個別導
電体において、該導体抵抗補正領域の個別導電体のバタ
ン幅を複数段可変させてICの中央側に配置される個別
導電体においては実効的にバタン幅を広く形成し、IC
の端面側に配置される個別導電体においては実効的にバ
タン幅を狭く形成したことを特徴とするサーマルヘッド
(1) In an individual conductor that is connected to a heating resistor and is formed to extend to a bonding terminal of an IC, and has a conductor resistance correction region whose button width is narrower than the part in contact with the resistor, the conductor resistance correction is performed. The width of the button of the individual conductor in the area is varied in multiple steps, so that the width of the button is effectively widened for the individual conductor placed in the center of the IC.
A thermal head characterized in that the batten width is formed to be effectively narrow in the individual conductors arranged on the end face side of the thermal head.
(2)前記個別導電体はさらに絶縁層を介してICの下
面に配置される狭い導体層の領域を具備し前記狭い導体
幅領域の個別導電体のバタン幅を複数段可変させてIC
の中央側に配置される個別導電体においては実効的にバ
タン幅を広く形成し、ICの端面側に配置される個別導
電体においては実効的にバタン幅を狭く形成したことを
特徴とする特許請求の範囲第(1)項記載のサーマルヘ
ッド。
(2) The individual conductor further includes a narrow conductor layer region disposed on the bottom surface of the IC via an insulating layer, and the batten width of the individual conductor in the narrow conductor width region is varied in multiple stages.
A patent characterized in that the individual conductors arranged on the center side of the IC have an effectively wide batten width, and the individual conductors arranged on the end face side of the IC have an effective batten width narrowed. A thermal head according to claim (1).
JP59092127A 1984-05-09 1984-05-09 Thermal head Pending JPS60234864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59092127A JPS60234864A (en) 1984-05-09 1984-05-09 Thermal head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59092127A JPS60234864A (en) 1984-05-09 1984-05-09 Thermal head

Publications (1)

Publication Number Publication Date
JPS60234864A true JPS60234864A (en) 1985-11-21

Family

ID=14045765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59092127A Pending JPS60234864A (en) 1984-05-09 1984-05-09 Thermal head

Country Status (1)

Country Link
JP (1) JPS60234864A (en)

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