JPS60234319A - Resist processing apparatus - Google Patents

Abstract

PURPOSE:To realize the processing suitable for a kind of resist by providing in parallel the two lines for thorough resist processing after the exposure and also providing a transfer mechanism and a control part which can select the next process of any one line for the transfer to the next process. CONSTITUTION:In case there is no mask 19 at the position 13A of a holding mechanism locating at the developing part 4A and there is a mask 19 at the position 20A of a name printing part 3A in the preceding stage, with a control signal of control part 1, the holding mechanism moves to the position 20A through a transfer path 11, attracts a mask 19 with the attracting part 18 upon confirming that the processing at the preceding stage has completed, and then returns to the position 13A passing the transfer path 11. Moreover, the holding mechanism moves to a transit position 21 through the crossing transfer path 9, if there is no mask 19 at the transit position 21 in the succeeding stage, it places the mask 19 here and returns to the position 13A. In case there is no vacant transit position 21, it waits at the position 13A until such position becomes vacant. Other holding mechanism also operate in this way based on the signal sent from the control part 1. Thereby, many kinds of resist processing can be executed simultaneously under the different processing conditions.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a resist processing apparatus, and more particularly to a resist processing apparatus suitable for mounting reticles for masks and steppers.

[Background technology]

In general, resists used in masks and mask originals (reticles) are diversified and are roughly classified into the following two types.

One type is a novolac resin-based positive photoresist, which is mainly made of novolac resin, and a novolac resin-based positive electron beam resist, which can be used with a water-soluble developer for photomasks.

The other type is polymer type negative photoresist or negative electron beam resist CM, which uses an organic solution as a developer.
S (chloromethylated polystyrene).

These are PGMA (polyglycidyl methacrylate) and positive electron beam resist.

In the mask resist processing equipment, the entire process from substrate cleaning, resist coating, and rough 1-base (pre-bake) is performed, and then separate exposure is performed, and the processing step after this exposure, that is, printing (in the case of positive resist) , development, bake (
Among the steps of post-bake), ashing, etching, and resist stripping, a method in which the development step and the base step are integrated is considered.

According to the above configuration, after the base (post-bake), the base is unloaded, ashing is performed using another ashing device, and etching is performed using a separate etching device.
After this, resist stripping is performed, and the inventors have found that the processing steps from the beta step to the resist stripping step are not consistent and are inconvenient.

In addition, a printing process is required for positive photoresists, but not for electric wire resists, and therefore the mask resist processing equipment is different depending on whether it is a positive photoresist or an electron beam resist.2Furthermore, the above-mentioned resist processing equipment is exclusively for resists using either an organic solvent-based developer or an aqueous developer, and therefore requires a resist processing apparatus each having a development process using each developer.

The inventor of the present invention has found that the mask resist processing apparatus described above has the following problems.

(1) Depending on whether the resist used is positive or negative, and whether the developer applied to the resist is an organic solvent developer or a water-soluble developer, the resist processing equipment for masks is different. Separate equipment is required, resulting in poor productivity and cost.

(2) The post-exposure process cannot be completed consistently, resulting in extremely low work efficiency.

(3) The process line after exposure is not consistent, and there is a lot of movement in and out from process to process, and foreign matter often adheres each time, resulting in a decrease in the quality of the produced mask and poor mask accuracy.

[Object of the Invention] The object of the present invention is to simultaneously process resists of different types under different processing conditions, reduce waiting time (stagnation time) when moving to the next process, improve productivity, and improve productivity. An object of the present invention is to provide a resist processing device that can be produced at low cost.

Another object of the present invention is to provide a mask that reduces the amount of foreign matter attached by integrating the resist treatment process after exposure, improves the quality of the produced masks, and improves mask accuracy. An object of the present invention is to provide a resist processing device.

Another object of the present invention is to provide a resist processing apparatus that can improve work efficiency.

The above and other objects and novel features of the present invention are as follows:
This will become clear from the description in Book M8 of the present invention and the attached drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

That is, among the resist processing steps, two lines in which all of the post-exposure resist processing steps can be performed with -i are installed in parallel, and when moving from at least one or more of the relevant steps to the next step, the "2 lines" By providing a transport mechanism with intersecting transport paths and its control unit so that the next process of either one of the lines can be selected, it is possible to select the next process of one of the lines from that process to the next process of another line that can perform processing appropriate to the type of resist. You can select (use) the process, and if necessary, you can select an empty line or the next process of the previously empty line, and therefore, if necessary, either of the two lines can be selected. Since the next process of one line can be selected, many types of resist processing with different processing conditions (mainly development and post-bake conditions) can be processed simultaneously, and the waiting time ( It is possible to reduce the stagnation time), improve productivity (improve throughput), and reduce the cost of masks (reticles). Furthermore, by standardizing the resist processing process after exposure, we are able to reduce the amount of foreign matter that adheres, make the quality of the produced masks (reticles) uniform, and suppress variations in quality, thereby improving the quality of the masks (reticles). [Embodiment] FIG. 1 shows an embodiment of a resist processing apparatus according to the present invention.

In the drawings, substrate cleaning,
Resist coating, soft bake (pre-base), exposure, then printing, development, and bake (post base)
, plasma ashing, etching, and resist stripping processes are performed, and there are two lines (upper and lower) that can be used to perform all of the resist processing steps after exposure. Reference numeral 1 denotes a control unit that sets each process condition, inputs a mask name, and controls the mask during the process. For example, a control device using a microcomputer is used here. 2Δ, 2J
3 is the loader part of the mask, 3A.

3B is Ho 11 printing section, 4A, 4I3 is developing section, 5A
.

5B is a baking section, 6A and 6B are plasma ashing sections,
7A and 7B are the etching part and resist peeling part, 8A
, 8B is an unloader section.

Also, the developing sections 4A, 4B, and the beta section 5A, which perform the developing process.
, 5B, portions 5c and 5d where the items taken out from the baking furnaces 5a and 5b are placed, and a plasma ashing section 6Δ where a plasma ashing process is performed.

When moving from 6B to the next process, the next process of either one of the upper and lower lines can be selected, so that, for example, the next process of the other line that can perform processing appropriate to the type of resist can be selected (used). The conveyance mechanism is provided with a cross-type conveyance path 9 so that the next process of the line which is already vacant or has been vacant earlier can be selected from among both lines as needed. A guy I/groove 10 is bored in this cross-type conveyance path 9. In addition, the conveyance mechanism has a conveyance path]1, name printing parts 3A, 3B, baking part 5A,
Places 5c and 5 in the previous stage to be put into the baking ovens 5a and 5b of 5B
d, it can be moved (transported) from the etching section and resist peeling sections 7A and 7B to the next process on the same line.

A guide groove 12 is bored in this conveyance path 11, and the guide groove 2 and the guide groove 10 are connected, and the lower end of the shaft of the holding mechanism for moving the mask, which is the object to be processed, is connected to the guide groove 12. The guide groove 12 and the guide groove 10, or the guide groove 10 for the front stage and the guide groove 1 for the rear stage.
0 (in the plasma ashing sections 6Δ, 6B, the front guide groove 10 and the rear guide groove 0 are connected). (slidable).

This holding mechanism (not shown) has a vacuum suction type suction part that is driven by opening and closing of an electromagnetic valve to perform a suction operation. A large number of holes are bored in the inner disc-shaped member, and these holes support the suction part. An electromagnetic valve connected to the exhaust pump and an electromagnetic valve for releasing the vacuum (release of suction) are connected through a passage in the shaft (the shaft of the holding mechanism), respectively. The conveyance mechanism holds such a holding mechanism at a predetermined position, that is, 13A to 1.7
They are normally located at positions A, 13B to 1.7B, respectively. Therefore, 18 indicated by dotted lines in the figure indicates the suction portion of each holding mechanism, and the state in which the mask 19 is suctioned and held at that position from the back side is shown. Regarding the movement range of these holding mechanisms, the baking parts 4△, 4+
Each holding mechanism located at 1 is connected to guy 1 between the positions 2OA and 20B of the name printing parts 3A and 3B in the previous process and the relay position 21 of the intersecting conveyance path 9) 751.2A,
12B and 10Δ, each of the holding mechanisms which can be moved via the IOB and located at the pre-stage locations 5c and 5d of the baking sections 5A and 5B is located at the intermediate location 21 of the intersecting conveyance path 9 and the location of the baking ovens 5a and 5b, respectively. 22C, 22B], OA, IOB and 12A.

12B, and the baking section 5A.

The holding mechanisms located at the subsequent positions 5e and 5f of 5B are at the positions of the baking ovens 5a and 5b, respectively [23A].

23B and the relay position 24 of the cross-type conveyance path 9 via the guide grooves 1.2A, 12B, IOA, and IOB. In addition, the plasma ashing section 6
The holding mechanisms located at A and 6B can be moved between the relay positions 24 and 25 of the intersecting conveyance path 9 via guide grooves 10Δ and 10B, and are also connected to the etching section and the resist stripping section 7A.

Each holding mechanism located at 7B is located at the relay position 25 of the intersecting conveyance path 9 and at positions 26A and 26 of the unloader sections 8A and 8B.
Guide grooves 10A, JOB and 12A, 12
It is now possible to move via B. The masks 19 in the beta furnaces 5a and 5b of the baking sections 5A and 5B are moved by an arm method at predetermined time intervals, but a belt method or the like may also be used.

Also, each position 13A to 17A, 13B to 17B, 20A to
20B, 21.22A, 22B, 23A.

23B, 24, 25, 26A, and 26B is detected by an optical sensor, for example, and is inputted to a storage section of a microcomputer in the control section 1, for example. Therefore, the predetermined positions 13A~], 7A, 13B-], 7
Each holding mechanism B is configured to check that it is not holding the mask 19 by suction (the master 19 is not in its predetermined position) and that the mask 19 is in the previous stage position (previous process position or previous stage relay position). When a certain condition is established, the mask 9 is driven by a control signal from the control section 1 to go to the previous position to pick up the mask 19, hold the mask 19 by vacuum suction, and return to the original predetermined position. In other cases, each holding mechanism does not perform the above-mentioned operation. Furthermore, each holding mechanism has to ensure that it is holding the mask 19 by suction (that the mask 19 is at its own predetermined position) and that there is no mask 19 in a subsequent position (post-process position or subsequent relay position). If this is true, the mask 19 is driven by a control signal from the control section 1 to place the mask 19 at the latter position and return to the original predetermined position. In other cases, each retaining mechanism remains stationary in a predetermined position without any subsequent movement. Note that when each holding mechanism goes to the previous stage process position to pick up the mask 19 and brings it back to its original predetermined position, these holding mechanisms naturally confirm with the control signal from the control unit 1 that the process of the previous stage has been completed. Needless to say, you will have to take it home with you.

For example, if the holding mechanism located in the developing section 4A does not have the mask 19 at the position 13A and there is a mask 19 at the position 20A of the printing section 3A of the previous stage, the control section 1 For example, the holding mechanism is moved to position 2 via the conveyance path 11 by a control signal from a microcomputer.
After going to the OA and confirming that the previous stage processing has been completed, the mask 19 is sucked from the back side with its suction unit 18, and the mask 19 is returned to the original predetermined position [13A] through the conveyance path 11 again. Furthermore, if there is no mask 19 at the subsequent relay position 21 (if it is vacant), the holding mechanism moves the cross-type conveyance path 9 to the relay position 21.
The user then places the mask 19 there, returns to the original predetermined position 13A, and, if the relay position 21 is not vacant, waits at the predetermined position IWI 3A until the relay position 21 becomes vacant. The control unit 1 also controls the other holding mechanisms.
The same operation will be performed based on the other signals.

Next, in the upper line developing section 4A, a water-soluble developer is used to target a predetermined positive photoresist or positive engraving line, and in the lower line developing section 4B, an organic solvent-based developer is used. using a specified negative photoresist or negative electron beam resist (CMS, PGMA)
The target is It is assumed that the lines are set so that resist processing for a certain type of positive photoresist coating mask can be performed on the upper line, and resist processing for a certain type of negative photoresist coating mask can be performed on the lower line.

Based on this premise, the overall operation will be explained by illustrating several cases.

(1) Masks from Loader Parts 2A, 2B] After the development process is completed for 9, if the next process of any line can be performed, the loader part 2' The masks 19 coated with positive photoresist (upper line) and the masks 19 coated with negative photoresist (lower line) conveyed from A and 2B are processed one after another and moved to the next process, completing the series of resist processing. The produced photomask is then taken out from the unloader sections 8A and 8B, and is further transported to another process.

Here, a type of positive photoresist coating mask 19 that exits the loader section 2A and performs resist processing one after another.
As shown by the arrows in the figure, for example, name printing section 3A-developing section 4A-relay position 21-bake section 5B-relay position 24-plasma ashing section 6A-relay position 25-etching section and resist peeling 7A- By sequentially selecting (utilizing) the next process that is vacant or that is already vacant in the order of unloader section 8A, mutual line processes can be effectively utilized, greatly reducing waiting time. It becomes possible.

(2) Also, a mask 19 for applying a certain value of positive photoresist supplied to the loader sections 2A and 2B (upper line), and a mask 19 for applying a certain type of negative photoresist (lower line)
However, if the developing conditions, baking conditions, ashing conditions, etc. satisfy only the same line process, loader section 2
Addresses are set for the masks 19 from A, 2B so that they are transported to the next process on the same line, and control signals from the control unit 1, for example, a microcomputer, are used to control the masks 19 from the baking units 5A, 5B at the front stage 5c, 5d, the plasma ashing sections 6A, 6B, and the etching section and resist stripping sections 7A, 7B, catch only the mask I9 from the loader sections 2A, 2B on the same line from the previous position. In addition, the operation may be controlled by adding additional conditions to the operation conditions of the holding mechanism described above.

(3) For example, if a certain type of positive photoresist coating mask 19 supplied to the loader section 2A is applied, for example, baking conditions or ashing conditions are different from other lines (lower line).
If the baking section 5B and plasma ashing section 6B can be used for processing, a predetermined address is set for the mask 19 supplied to the loader section 2A, and the control section I performs the above (2).
), the etching area and resist peeling area 7
An additional condition is added to the operating conditions of the holding mechanism described above so that the holding mechanism located at A will catch only the mask 19 from the loader section 2A on the same line (upper line) from the previous position 25. All you have to do is control the added motion.

In this case, after the mask 19 leaves the loader section 2A, the name printing section 3A - the developing section 4A - the relay position 21 - the baking section 5A
or 5B (the baking section that is vacant first or is already vacant is selected) - relay position 24 - plasma ashing section 6A or 6B (the plasma ashing section that is vacant first or that is already vacant is selected) - Relay position 25 - Etching part and resist peeling part 7A - Unloader part 8
A is taken out as a photomask.

(4) The baking conditions of the mask 19 (upper line) for coating a certain type of positive photoresist and the mask 19 (lower line) for coating a certain type of negative photoresist supplied to the loader sections 2A and 2B are different from those of the other lines. If it must be a baking process and the other processes must be on the same line, the loader section 2A.

Addresses are set in advance so that the masks 19 from 2B are transported to predetermined next steps, and a control signal from the CPU of the microcomputer of the control section 1 is used to control the baking sections 5A and 5B's pre-stage portions 5c.

5d, the holding mechanisms located in the plasma ashing sections 6A, 6B, the etching section, and the resist stripping sections 7A, 7B may be controlled by adding additional conditions to the operating conditions of the holding mechanisms described above.

(5) In short, depending on the type of resist applied to the mask 19 supplied to the loader sections 2A, 2B, it is sufficient to perform post-exposure resist processing in accordance with the type of resist applied to the mask 19 supplied to the loader sections 2A, 2B. Therefore, necessary processes for both lines are selected. Control unit 1
The transfer mechanism (each holding machine 4+1) may be controlled by a control signal from the control unit 1 to perform a predetermined processing step.

As shown in ``2'' below, the next process for either the upper or lower line can be selected as needed, so it can be Both types of resist processing can be performed simultaneously, and the waiting time (stagnation time) when moving to the secondary process can be reduced compared to the conventional method, thus improving throughput (improving productivity). can. This allows photomass to be produced at a lower cost than conventional methods. Furthermore, by integrating the resist treatment process after exposure, we can reduce the adhesion of foreign substances.
The quality of the produced photomasks can be made uniform, variations in quality can be suppressed, the quality of the photomask can be improved by 1, and a highly accurate photomask can be obtained. Furthermore, the control unit 1
By controlling both lines, resist processing after exposure can be efficiently carried out using both lines, improving work efficiency and productivity. It is efficient because the same processing steps on the line can be used, the resist processing can be continued without stopping the entire system (the entire device), and the processing step at the faulty part can be repaired during that time.

〔effect〕

Use of the resist processing apparatus according to the present invention provides the following various effects.

(1) Two lines that can consistently perform all post-exposure resist processing steps are installed in parallel, and when moving from at least one or more relevant steps to the next step, one of the two lines is By providing a transport mechanism with intersecting transport paths and a control unit for the next process, the next process can be selected (utilized) from another line that can perform processing appropriate to the type of resist. If necessary, it is possible to select the next process of the line that is already vacant or the one that has become vacant first. Since the next process of one line can be selected, many types of resist processing with different processing conditions (mainly development, post-bake conditions, ashing conditions, etc.) can be processed simultaneously, and when moving to the next process, Waiting time (stagnation time) can be reduced compared to the conventional method, and productivity can therefore be improved.

(2) By improving productivity, masks (reticles) can be produced at a cost of 1 at a low cost.

(3) By making the resist processing process after exposure consistent, it is possible to reduce the amount of attached foreign matter, thereby making the quality of the produced masks (reticles) uniform and suppressing variations in quality. It is possible to improve the quality of the mask (reticle) and obtain a highly accurate mask (reticle).

(4) Since the resist processing after exposure is made more efficient by using both lines together, work efficiency and productivity can be improved.

(5) Even if some processing steps fail, the same processing steps on other lines can be used, and the entire system (
This is efficient because the resist processing can be continued without stopping the entire resist processing apparatus (the entire resist processing apparatus), and during that time, the processing process at the faulty part can be repaired.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. Nor. For example, in the above embodiment, the loader section 2A.

Although the case where positive type photoresist and negative type photoresist are used for the resist 1 applied to the mask 19 supplied to the mask 2B, the present invention is not limited thereto, and a water-soluble developer may be applied. It may also be a positive engraving resist, such as a negative engraving 7-line resist to which an organic solvent developer is applied, and therefore at least four types of resists can be processed efficiently at the same time. In addition, in the case of negative-tone photoresist in the above embodiment, the resist stripping process in the etching area and resist stripping step F3 may be performed in separate steps, for example, using ozone sulfuric acid or chromium mixed acid. , and 02 plasma ashing for a long time (for example, about 20 minutes).
Resist may also be removed by doing this. Further, in the above embodiment, as a conveying method, a method is used in which the center of the mask 19 is supported from below by the suction section 8 of the holding mechanism, and the mask 19 is suctioned by vacuum, and conveyed by the movement of the holding mechanism. For example, an arm method may be used, or a combination of a belt method and an arm method may be used.

[Application field]

The above explanation has mainly been about the case where the invention made by the present inventor is applied to the production of photomasks, which is the background field of application, but the invention is not limited thereto. It can also be applied to Furthermore, it can also be applied to resist processing as a mask when forming semiconductor devices on a wafer substrate.

[Brief explanation of drawings]

The drawing is a simplified plan view showing one embodiment of a mask processing apparatus according to the present invention. 2A, 2B...Loader section, 3A, 3B - Name printing section, 4Δ, 4B... Developing section, 5A, 5B... Bake section, 6A, 6B... Plasma ashing section, 7A. 7B...Etching part and resist peeling part, F3 A
, . 8B...Unloader part, 9...Cross-type conveyance path, 10°12...Guide groove, 11...Transportation path, 18...Adsorption part. Agent Patent Attorney Akio Takahashi ρ

Claims (1)

[Scope of Claims] 1. Two lines installed in parallel that incorporate a one-piece system that can perform each process from printing to development, baking, ashing, etching, and resist peeling after resist coating, and at least one The resist processing is characterized in that a cross-type conveyance path is provided with a conveyance mechanism and its control unit so that the next process of one of the two lines can be selected when moving from the process to the next process. Device. 2. In the development process of one line, a water-soluble developer is used,
In the developing process of the other line, an organic solvent-based developer is used to develop various resists. Resist processing equipment included. 3. The conveyance mechanism has a conveyance path provided between processes on the same line that does not have the cross-type conveyance path, and has guide grooves in this conveyance path and the cross-type conveyance path, and further 3. The resist processing apparatus according to claim 1, further comprising a holding mechanism which is movable within the guide groove and holds the transported object by vacuum suction.