JPS60231142A - Icp quantometer - Google Patents

Icp quantometer

Info

Publication number
JPS60231142A
JPS60231142A JP8735784A JP8735784A JPS60231142A JP S60231142 A JPS60231142 A JP S60231142A JP 8735784 A JP8735784 A JP 8735784A JP 8735784 A JP8735784 A JP 8735784A JP S60231142 A JPS60231142 A JP S60231142A
Authority
JP
Japan
Prior art keywords
argon gas
plasma
purity argon
plasma torch
valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8735784A
Other languages
Japanese (ja)
Inventor
Tadashi Kamiya
神谷 忠
Koji Okada
幸治 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Shimazu Seisakusho KK
Original Assignee
Shimadzu Corp
Shimazu Seisakusho KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp, Shimazu Seisakusho KK filed Critical Shimadzu Corp
Priority to JP8735784A priority Critical patent/JPS60231142A/en
Publication of JPS60231142A publication Critical patent/JPS60231142A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/73Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Abstract

PURPOSE:To attain to reduce the operation cost of an ICP quantometer, by making it possible to supply low purity argon gas when argon supplied to a plasma torch may be low purity. CONSTITUTION:Selection valves C1, C2 are opened and closed by the order from a computer 5 so as to be made contrary to each other. High and low purity argon gas bombs 6, 7 are connected to a gas controller 4 through the selection valves C1, C2. For example, when lighting operation is started, the computer 5 opens the valve C1 at first to supply high purity argon gas to a plasma torch 1 and a high frequency circuit not shown in the drawing is controlled to light plasma. When the plasma is lighted, an optical sensor 8 issues a signal. The computer 5 closes the valve C1 upon the reception of said signal and opens the valve C2 with the closing of the valve C1 to change over argon gas supplied to the plasma torch 1 from high purity to low purity. This operation is performed because the light of high purity argon is easily lighted at the time of the lighting of a plasma flame.

Description

【発明の詳細な説明】 イ・ 産業上の利用分野 本発明は高周波誘導結合プラズマ(工CP)発光分光分
析装置に関する。
DETAILED DESCRIPTION OF THE INVENTION A. Field of Industrial Application The present invention relates to a high frequency inductively coupled plasma (CP) emission spectrometer.

口・従来技術 ■CP発光分光分析装置はプラズマトーチにアルゴンガ
スを供給し、高周波による電磁誘導作用でプラズマ炎を
形成し、このプラズマ炎の高温でプラズマ炎に導入した
試料を原子化して発光させてその光を分光するものであ
る。
■Conventional technology: A CP emission spectrometer supplies argon gas to a plasma torch, forms a plasma flame through electromagnetic induction due to high frequency waves, and the high temperature of this plasma flame atomizes the sample introduced into the plasma flame, causing it to emit light. It separates that light into spectra.

ICp発光分光分析装置のプラズマトーチには従来高純
度アルゴンガスを専ら供給していたが、ICp発光分析
ではアルゴンガスの消費量が大きいので、高価な高純度
アルゴンガスを用いる場合の分析装置の運転経費は他種
分析装置に比しかなシ高いものになっていた。
Conventionally, high-purity argon gas was exclusively supplied to the plasma torch of an ICp emission spectrometer, but since ICp emission spectroscopy consumes a large amount of argon gas, it is difficult to operate the analyzer when using expensive high-purity argon gas. The cost was much higher than that of other types of analyzers.

2硲 一方ICP分析におけるプラズマトーチに供線するアル
ゴンガスは高純度であることが望ましいが、場合によっ
ては比較的低純度のアルゴンガスでも充分な場合が多く
、そのような場合にも高純度アルゴンガスを用いている
ことは経済的意味で大へん無駄なことである。
On the other hand, it is desirable that the argon gas connected to the plasma torch in ICP analysis be of high purity, but in some cases, relatively low purity argon gas is often sufficient, and even in such cases, high purity argon gas is required. The use of gas is economically wasteful.

ヘト的 本発明はプラズマトーチに供給するアルゴンが低純度で
もよい場合には低純度アルゴンガスを供給することがで
きるようにして、工CP発光分光分析装置の運転経費の
軽減をはかるものである〇二・構成 本発明ICp発光分光分析装置は、高純度アルゴンガス
容器と高純度でないアルゴンガス容器とを選択パルプを
介してプラズマトーチに接続し、高低倒れの純度のアル
ゴンガスでも自由にプラズマトーチに供給できるように
したものである0ホ・実施例 図面は本発明の一実施例の要部を示す。1はプラズマト
ーチで3重管構造で、一番中の中心管にはキャリヤガス
が供給され、その次の管にはプラズマガスが供給され、
プラズマ炎は主としてこのガスによって形成される。一
番外側の管には冷却ガスが供給される。これらのガスは
全て同じアルゴンガスで名称はプラズマトーチにおける
機能を表わしている。キャリヤガスは試料霧化器2に供
給され、こメで霧吹の作用で容器3内の試料溶液を吸引
し試料霧化器内に噴霧して、形成された試料の霧滴をガ
ス流によってプラズマトーチの中心管捷で運ぶのである
。上述3種のガスの流量はプラズマトーチの寸法、高周
波入力、試料の種類に応じて夫々適値があるので、ガス
コントローラ4において夫々の適流量に制御されている
。ガスコントローラ4は上述3種のガス夫々に対する流
量調節弁v1.■2.v3とそのドライバM11M2、
M3と流量センサ81.S2,83とよりなシ、これら
の流量センサの出力が制御コンピュータ5に取込まれ、
設定値と比較され、コンピュータ5からの制御信号でド
ライバMl−M3が操作されるようになっている。
The present invention aims to reduce the operating costs of the industrial CP emission spectrometer by making it possible to supply low-purity argon gas when the argon supplied to the plasma torch does not need to be of low purity. 2. Configuration The ICp emission spectrometer of the present invention connects a high-purity argon gas container and a non-high-purity argon gas container to a plasma torch through a selective pulp, and freely connects argon gas of high and low purity to the plasma torch. Embodiment 0 The drawings, which have been made available, show essential parts of an embodiment of the present invention. 1 is a plasma torch with a triple-tube structure, in which the carrier gas is supplied to the center tube, and the plasma gas is supplied to the next tube.
The plasma flame is primarily formed by this gas. The outermost tube is supplied with cooling gas. All of these gases are the same argon gas, and their names represent their functions in the plasma torch. The carrier gas is supplied to the sample atomizer 2, which suctions the sample solution in the container 3 through the atomizing action of the rice and atomizes it into the sample atomizer. It is carried by the central pipe of the torch. The flow rates of the three types of gases mentioned above have appropriate values depending on the dimensions of the plasma torch, the high frequency input, and the type of sample, so they are controlled by the gas controller 4 to the appropriate flow rates. The gas controller 4 has flow rate control valves v1. ■2. v3 and its driver M11M2,
M3 and flow sensor 81. S2, 83 and more, the outputs of these flow rate sensors are taken into the control computer 5,
The values are compared with the set values, and the drivers M1-M3 are operated by control signals from the computer 5.

C1,C2は選択バルブでその開閉は互に相反しておシ
、コンピュータ5からの指令によりその開閉が制御され
ている。6.′7はアルゴンガスボンベで、6は高14
度、7は低純度のアルゴンガスが充填しである。これら
のガスボンベは選択バルブCI、C2を介してガスコン
トローラ4に接続されている。
C1 and C2 are selection valves whose opening and closing are mutually contradictory, and whose opening and closing are controlled by commands from the computer 5. 6. '7 is an argon gas cylinder, 6 is height 14
Degree 7 is filled with low purity argon gas. These gas cylinders are connected to the gas controller 4 via selection valves CI and C2.

切換パルプC1,C2の操作プログラムの一例は次のよ
うなものである。プラズマトーチ点灯のプログラムで、
点灯動作をスタートさせると、コンピュータ5はまずパ
ルプC1を開いて高純度のアルゴンガスをプラズマトー
チ1に供給し、不図示の高周波回路を制御してプラズマ
を点灯させる。
An example of an operation program for the switching pulps C1 and C2 is as follows. With the plasma torch lighting program,
When the lighting operation is started, the computer 5 first opens the pulp C1, supplies high purity argon gas to the plasma torch 1, and controls a high frequency circuit (not shown) to light the plasma.

プラズマが点灯すると光センサjにプラズマ光が入って
光センサ8から信号が出力されるっコンピュータ5はこ
の信号を受取ると、パルプC1を閉じて行き、それに伴
ってC2を開いて行って、プラズマトーチ1に供給する
ガスを高純度アルゴンから低純度アルゴンに切換えて行
く。このようにするのは、プラズマ炎の点灯の際は高純
度アルゴンの方が点灯させ易いからである。
When the plasma is turned on, plasma light enters the optical sensor j and a signal is output from the optical sensor 8. When the computer 5 receives this signal, it closes the pulp C1 and opens C2 accordingly, thereby increasing the plasma. The gas supplied to the torch 1 is switched from high purity argon to low purity argon. This is done because it is easier to use high-purity argon when lighting a plasma flame.

へ・効果 こ\で高純度アルゴンガスと云っているものは99.9
995%以上と云った程度のものであり、低純度と云っ
ているのは99・ 995%程度のものを指しているが
、これはこの純度でなければと云うことではなく、その
ような市販品があるからで、プラズマ炎の維持は純度9
9・ 9%程度でも可能である。低純度のアルゴンは高
純度のものに比し3割程度安価であるから、高純度を要
しない場合にはなるべく低純度のアルゴンを使うことで
、ICp分析装置の運転経費をかなり低減させることが
できる。
The effect of what is referred to as high purity argon gas is 99.9.
995% or higher, and low purity refers to 99.995% or higher, but this does not mean that it has to be this pure; This is because the plasma flame is maintained at purity 9.
It is possible even at around 9.9%. Low-purity argon is about 30% cheaper than high-purity argon, so if high purity is not required, using low-purity argon as much as possible can significantly reduce the operating costs of the ICp analyzer. can.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明の一実施例装置の要部を示すブロック図で
ある。 1・・・プラズマトーチ、2・・・試料霧化器、3・・
・試料容器、4・・・ガスコントローラ、S1〜S3・
・・流量センサ、5・・・制御コンピュータ、6・・・
高純度アルゴンガスボンベ、7・・・低純度アルゴンガ
スボンベ、C1,C2・・・切換え弁、8・・・光セン
サ。 代理人 弁理士 軽 浩 介
The drawing is a block diagram showing the main parts of an apparatus according to an embodiment of the present invention. 1... Plasma torch, 2... Sample atomizer, 3...
・Sample container, 4... Gas controller, S1-S3・
...Flow rate sensor, 5...Control computer, 6...
High purity argon gas cylinder, 7...Low purity argon gas cylinder, C1, C2...Switching valve, 8...Photo sensor. Agent Patent Attorney Kosuke Karu

Claims (1)

【特許請求の範囲】[Claims] 高純度アルゴンガス容器と高純度でないアルゴンガスの
容器とを選択パルプを介してプラズマトーチに接続し、
所与のプログラムに従って選択パルプを操作し、プラズ
マトーチに供給するアルゴンガスの純度を切換える制御
装置を備えたことを特徴とする工CP発光分光分析装置
Connect a high-purity argon gas container and a non-high-purity argon gas container to a plasma torch through the selected pulp,
A CP emission spectrometer comprising a control device that operates a selected pulp according to a given program and switches the purity of argon gas supplied to a plasma torch.
JP8735784A 1984-04-30 1984-04-30 Icp quantometer Pending JPS60231142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8735784A JPS60231142A (en) 1984-04-30 1984-04-30 Icp quantometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8735784A JPS60231142A (en) 1984-04-30 1984-04-30 Icp quantometer

Publications (1)

Publication Number Publication Date
JPS60231142A true JPS60231142A (en) 1985-11-16

Family

ID=13912632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8735784A Pending JPS60231142A (en) 1984-04-30 1984-04-30 Icp quantometer

Country Status (1)

Country Link
JP (1) JPS60231142A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107024527A (en) * 2016-01-29 2017-08-08 安捷伦科技有限公司 Plasma spectroscopy device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107024527A (en) * 2016-01-29 2017-08-08 安捷伦科技有限公司 Plasma spectroscopy device
CN107024527B (en) * 2016-01-29 2022-04-12 安捷伦科技有限公司 Plasma spectrum analyzer

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