JPS6022645Y2 - Triple plate type terminator - Google Patents

Triple plate type terminator

Info

Publication number
JPS6022645Y2
JPS6022645Y2 JP2737080U JP2737080U JPS6022645Y2 JP S6022645 Y2 JPS6022645 Y2 JP S6022645Y2 JP 2737080 U JP2737080 U JP 2737080U JP 2737080 U JP2737080 U JP 2737080U JP S6022645 Y2 JPS6022645 Y2 JP S6022645Y2
Authority
JP
Japan
Prior art keywords
resistive film
type terminator
conductor
terminator
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2737080U
Other languages
Japanese (ja)
Other versions
JPS56130303U (en
Inventor
輝雄 古屋
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to JP2737080U priority Critical patent/JPS6022645Y2/en
Publication of JPS56130303U publication Critical patent/JPS56130303U/ja
Application granted granted Critical
Publication of JPS6022645Y2 publication Critical patent/JPS6022645Y2/en
Expired legal-status Critical Current

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Description

【考案の詳細な説明】 この考案はトリプレート形終端器の耐電力特性の改善及
び小形化に関するものである。
[Detailed Description of the Invention] This invention relates to improving the power withstanding characteristics and downsizing of a triplate type terminator.

第1図は従来のトリプレート形終端器の構成国を示した
もので、図中、1,1は一対の地導体、2.2は一対の
誘電体基板、3は中心導体、4は抵抗皮膜である。
Figure 1 shows the components of a conventional triplate type terminator. In the figure, 1, 1 is a pair of ground conductors, 2, 2 is a pair of dielectric substrates, 3 is a center conductor, and 4 is a resistor. It is a film.

次に従来のトリプレート形終端器の動作について説明す
る。
Next, the operation of the conventional triplate type terminator will be explained.

地導体1、誘電体基板2、中心導体3のサンドイッチ構
造で形成されたトリプレートストリップラインに入って
きた高周波電力は、中心導体3と対面しかつ同一線上に
はさみ込まれたテーパ状の抵抗皮膜4に入る事により、
抵抗皮膜4の広巾面と平行な成分の高周波電界が序々に
吸収されると共にインピーダンス整合も序々に行なわれ
る。
The high frequency power that enters the tri-plate strip line formed by the sandwich structure of the ground conductor 1, dielectric substrate 2, and center conductor 3 is transmitted to the tapered resistive film sandwiched in the same line as the center conductor 3. By entering 4,
The high-frequency electric field having components parallel to the wide surface of the resistive film 4 is gradually absorbed, and impedance matching is also gradually performed.

従ってインピーダイス特性の優れたトリプレート形終端
器が実現出来る。
Therefore, a triplate type terminator with excellent impedance characteristics can be realized.

しかし、このトリプレート形終端器の欠点は、トリプレ
ートストリップラインとして基本的に少ない抵抗皮膜4
の巾広面と平行な成分の高周波電界を吸収して終端器を
構成しているため、吸収効率が悪く、形状が大きなもの
と戊っていた。
However, the disadvantage of this triplate type terminator is that it basically has less resistance film as a triplate strip line.
Since the terminator is configured by absorbing high-frequency electric field components parallel to the wide surface of the terminal, the absorption efficiency is poor and the shape is large.

加えて、抵抗皮膜4で吸収された高周波電力による発熱
が、放熱断面の少ない中心導体3及び熱伝導率の悪い誘
電体基板2を介して放熱されていたため耐電力特性を悪
かった。
In addition, the heat generated by the high-frequency power absorbed by the resistive film 4 was radiated through the center conductor 3, which had a small heat radiation cross section, and the dielectric substrate 2, which had poor thermal conductivity, resulting in poor power durability.

この考案は前述の従来の欠点を除去したもので、その目
的とするところは耐電力特性の改善及び小形化にある。
This invention eliminates the above-mentioned conventional drawbacks, and its purpose is to improve power durability and reduce the size of the device.

第2図はこの考案の実施例の構成国を示したもので、図
中、1,1は地導体、2,2は誘電体基板、3は中心導
体、4は抵抗皮膜、5はスルホール導体である。
Figure 2 shows the constituent countries of the embodiment of this invention, in which 1, 1 is a ground conductor, 2, 2 is a dielectric substrate, 3 is a center conductor, 4 is a resistive film, and 5 is a through-hole conductor. It is.

ここで、スルホール導体5は地導体1,1と同電位であ
り、抵抗皮膜のテーパと逆テーパにかつ連続的に誘電体
基板2,2内に設けられている。
Here, the through-hole conductor 5 has the same potential as the ground conductors 1, 1, and is provided continuously in the dielectric substrates 2, 2 with a taper opposite to that of the resistive film.

次にこのように構成されたこの考案のトリプレート形終
端器の動作について説明する。
Next, the operation of the triplate type terminator of this invention constructed as described above will be explained.

まず、中心導体3にそって誘電体基板2,2内に設けた
スルホール導体5の効果について説明すると、地導体1
と同電位のスルホール導体5は抵抗皮膜4の巾広面と平
行な成分の高周波電界を序々に増加させる事が出来る。
First, to explain the effect of the through-hole conductor 5 provided in the dielectric substrates 2, 2 along the center conductor 3, the ground conductor 1
The through-hole conductor 5 having the same potential can gradually increase the high-frequency electric field of the component parallel to the wide surface of the resistive film 4.

地導体1,1、誘電体基板2,2、中心導体3のサンド
イッチ構造で形成されたストリップラインに入ってきた
高周波電力は、中心導体3と対面し、かつ同一線上には
さみ込まれた抵抗皮膜に入り終端器と戊っている。
The high-frequency power that enters the strip line formed by the sandwich structure of ground conductors 1, 1, dielectric substrates 2, 2, and center conductor 3 is transmitted to the resistive film sandwiched between the center conductor 3 and on the same line. It enters the terminal and connects to the terminator.

この時、スルホール導体5の効果で終端器を実現するた
めに必要な抵抗皮膜4の巾広面と平行な成分の高周波電
界を序々に増加させているため、抵抗皮膜4による高周
波電力の吸収効果が増大し、結果として周波数特性を劣
化させる事無く、小形化が実現出来る。
At this time, the effect of the through-hole conductor 5 gradually increases the high-frequency electric field of the component parallel to the wide surface of the resistive film 4 necessary to realize the terminator, so that the high-frequency power absorption effect of the resistive film 4 is reduced. As a result, miniaturization can be achieved without deteriorating the frequency characteristics.

さらに、抵抗皮膜4で吸収された高周波電力によって生
じた熱が、熱伝導率の良い多数のスルホール導体5を介
して放熱する事が出来、耐電力特性の改善もできる。
Furthermore, the heat generated by the high-frequency power absorbed by the resistive film 4 can be radiated through a large number of through-hole conductors 5 having good thermal conductivity, and the power resistance characteristics can also be improved.

以上のように、この考案によるトリプレート形終端器で
は誘電体基板内に中心導体にそって高周波電力進入側が
鋭角を威すテーパ状の抵抗皮膜を装着し、高周波電力進
入側が幅広のテーパ状でかつ連続的な地導体と同電位の
スルホール導体を設け、同時に抵抗皮膜とスルホール導
体の複数個とが接触するように形成しているため、抵抗
皮膜での吸収効果の増大、及び、抵抗皮膜での発熱の効
率良い放熱ができ、小形化、耐電力特性の改善が可能で
ある。
As described above, in the triplate type terminator according to this invention, a tapered resistive film with an acute angle on the high-frequency power input side is installed along the center conductor in the dielectric substrate, and a tapered resistive film with a wide tapered shape on the high-frequency power input side is installed in the dielectric substrate. In addition, a through-hole conductor with the same potential as the continuous ground conductor is provided, and the resistive film and multiple through-hole conductors are formed to be in contact with each other at the same time, increasing the absorption effect of the resistive film and increasing the absorption effect of the resistive film. It is possible to efficiently dissipate the heat generated by the device, making it possible to reduce the size and improve the power resistance characteristics.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のトリプレート形終端器を示す分解構成図
、第2図はこの考案の実施例を示す分解構成図である。 図中、1は地導体、2は誘電体基板、3は中心導体、4
は抵抗皮膜、5はスルホール導体である。 なお、図中同一あるいは相当部分には同一符号を示しで
ある。
FIG. 1 is an exploded configuration diagram showing a conventional triplate type terminator, and FIG. 2 is an exploded configuration diagram showing an embodiment of this invention. In the figure, 1 is a ground conductor, 2 is a dielectric substrate, 3 is a center conductor, and 4
5 is a resistive film, and 5 is a through-hole conductor. Note that the same or corresponding parts in the figures are denoted by the same reference numerals.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 片面に地導体を有する誘電体基板2枚で中心導体と高周
波電力進入側が鋭角を威すテーパ状の抵抗皮膜を同一線
上にはさみ込んで成るトリプレート形終端器において、
誘電体基板内に高周波電力進入側が幅広のテーパ状をな
すように配置されかつ地導体と同電位のスルホール導体
を複数個設け、同時にスルホール導体の複数個と抵抗皮
膜とが接触するように形成した事を特徴とするトリプレ
ート形終端器。
In a triplate type terminator, which consists of two dielectric substrates with a ground conductor on one side, a tapered resistive film with a central conductor and a high-frequency power input side forming an acute angle is sandwiched in the same line.
A plurality of through-hole conductors are arranged in a dielectric substrate so that the high-frequency power entrance side forms a wide tapered shape and have the same potential as the ground conductor, and are formed so that the plurality of through-hole conductors and the resistive film are in contact with each other at the same time. This is a tri-plate type terminator that is characterized by:
JP2737080U 1980-03-03 1980-03-03 Triple plate type terminator Expired JPS6022645Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2737080U JPS6022645Y2 (en) 1980-03-03 1980-03-03 Triple plate type terminator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2737080U JPS6022645Y2 (en) 1980-03-03 1980-03-03 Triple plate type terminator

Publications (2)

Publication Number Publication Date
JPS56130303U JPS56130303U (en) 1981-10-03
JPS6022645Y2 true JPS6022645Y2 (en) 1985-07-05

Family

ID=29623333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2737080U Expired JPS6022645Y2 (en) 1980-03-03 1980-03-03 Triple plate type terminator

Country Status (1)

Country Link
JP (1) JPS6022645Y2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2631883B2 (en) * 1988-10-20 1997-07-16 三菱電機株式会社 RF matching termination device
JPH0787130B2 (en) * 1990-09-17 1995-09-20 ヒロセ電機株式会社 High frequency termination resistor
JPH118502A (en) * 1997-06-16 1999-01-12 Kyocera Corp Signal attenuator for dielectric waveguide

Also Published As

Publication number Publication date
JPS56130303U (en) 1981-10-03

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