JPS60226140A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS60226140A
JPS60226140A JP8311484A JP8311484A JPS60226140A JP S60226140 A JPS60226140 A JP S60226140A JP 8311484 A JP8311484 A JP 8311484A JP 8311484 A JP8311484 A JP 8311484A JP S60226140 A JPS60226140 A JP S60226140A
Authority
JP
Japan
Prior art keywords
holes
unused
integrated circuit
hole
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8311484A
Other languages
Japanese (ja)
Inventor
Terumasa Fukuda
福田 照正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8311484A priority Critical patent/JPS60226140A/en
Publication of JPS60226140A publication Critical patent/JPS60226140A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits

Abstract

PURPOSE:To improve the accuracy of checking acceptable ratio of through holes by means of increasing the numbers of inspected through holes without increasing the chip area by a method wherein holes for checking acceptability of multilayered wiring connection making use of an element region unused for making a proper logic circuit are provided. CONSTITUTION:Eight each of through holes 1 are provided in a wiring region of a basic cell region 8. If this through hole check pattern is arranged on unused basic cells, a least 200 each of through holes may be formed. When such a through hole check pattern is arranged and connected utilizing 1% of integrated circuit with 10,000 each of basic cells (normally at least around 1% of them are unused), 800 each of through holes may be connected in series by 100 each of unused basic cells to improve the accuracty of checking acceptable ratio of through holes.

Description

【発明の詳細な説明】 (技術分野) 本発明は半導体集積回路装置に@し、特にDA(Des
ign Automation)処理によるマスタース
ライス方式の半導体集積回路装置に関する。
Detailed Description of the Invention (Technical Field) The present invention relates to a semiconductor integrated circuit device, and particularly to a DA (Des
The present invention relates to a master slice type semiconductor integrated circuit device using ign automation processing.

(従来技術) 近年、半導体集積回路装置は高密度化及び大規模化して
きており、特にランダムロジック回路において製造期間
の短縮を図る方法としてマスタースライス方式が注目さ
れている。
(Prior Art) In recent years, semiconductor integrated circuit devices have become denser and larger, and the master slicing method is attracting attention as a method for shortening the manufacturing period, especially in random logic circuits.

マスタースライス方式とは、半導体基板に論理回路を構
成するも品種に共通な素子を基本セルとしてアレイ状に
配置し、共通する製造プロセスのある段階まで一括して
予め形成しておき、品種に応じて任意の論理機能をDA
処理によりコンタクトあるいは金属配線以降のマスクを
作成することにより種々の論理機能を実現するものであ
る。
The master slicing method consists of configuring a logic circuit on a semiconductor substrate by arranging elements that are common to each product type in an array as basic cells, forming them in advance up to a certain stage of the common manufacturing process, and then processing them according to the product type. DA any logical function
Various logical functions are realized by creating contacts or masks after metal wiring through processing.

マスタースライス方式の半導体集積回路装置は。A master slice type semiconductor integrated circuit device.

多品種対応を目的とするために、アレイ状に配置された
基本セルちるいは配線領域、チップ外周に配置された入
出力回路セルの使用状態は品種毎に異る。すなわち、使
用率は100チ未満である。
In order to support a wide variety of products, the usage status of the basic cells arranged in an array, the wiring area, and the input/output circuit cells arranged around the chip periphery differs depending on the product. That is, the usage rate is less than 100 units.

いいかえると入出力回路セル、基本セル及び配線領域に
不使用領域が存在することになる。
In other words, there are unused areas in the input/output circuit cells, basic cells, and wiring areas.

また、半導体集積回路装置は、近年、高密度化に伴い、
微細化された多層配線構造が採用されている。多層配線
構造の採用は、8 + 4板とAlコンタクト以外にA
lとAlのコンタクト(以下スルーホールという)が必
要になる。大規模集積回路ではスルーホールの故も膨大
となシスルーホールの良品率が極端に高いものが要求さ
れている。スルーホールの良品率を高くするためには、
スルーホールのチェックを行い。スルーホール形成工程
にフィー−ドパツクし、不良品の早期除去を行うことが
必要である。
In addition, in recent years, with the increase in density of semiconductor integrated circuit devices,
A miniaturized multilayer wiring structure is adopted. In addition to the 8 + 4 board and Al contacts, the multilayer wiring structure is
A contact between L and Al (hereinafter referred to as a through hole) is required. Large-scale integrated circuits are required to have an extremely high yield rate of through-holes because of the large number of through-holes. In order to increase the quality of through holes,
Check the through holes. It is necessary to carry out feed packing in the through hole forming process and to quickly remove defective products.

従来、スルーホールのチェックには、数十個程度のスル
ーホール・チェックパターンが用いられていた。しかし
、大規模集積回路では数十万〜数百万個のスルーホール
が必要となることが考えられ、このような大きな数に対
して数十個程度のスルーホール・チェックパターンでは
、スルーホールの良否の判定では確度が低いことになる
Conventionally, several dozen through-hole check patterns have been used to check through-holes. However, large-scale integrated circuits may require hundreds of thousands to millions of through-holes, and a through-hole check pattern with only a few dozen through-holes for such a large number is difficult to use. The accuracy in determining pass/fail is low.

第1図は従来のスルーホール曝チェックパターンの一例
の平面図である。
FIG. 1 is a plan view of an example of a conventional through-hole exposure check pattern.

第1図において、1はスルーホール、2は第1導電層(
通常第1A1層)、3は第2導電層(通常第2A1層)
、4はカバー、6,7は探針用パッドである。
In FIG. 1, 1 is a through hole, 2 is a first conductive layer (
3 is the second conductive layer (usually the 2nd A1 layer)
, 4 is a cover, and 6 and 7 are probe pads.

このパターンにおいては、第1導電層2と第2導電層3
を接続するスルーホールが6個設けられており、探針用
バッド6と7との間の導通試験により、スルーホールの
良否を判定出来るようになっている。
In this pattern, the first conductive layer 2 and the second conductive layer 3
Six through holes are provided to connect the probe pads 6 and 7, and the quality of the through holes can be determined by conducting a continuity test between the probe pads 6 and 7.

通常、このパターンはチップの外周部あるいはコーナ部
に設置され、製造工程の終了時点(第2導電層3完成後
以降)で導通試験される。6個のスルーホールでチップ
全体のスルーホールの良否判定を行うには不十分と考え
られ、通常、パッド6と7との間がオープンなら不良と
しか判定出来ない。スルーホール数が増加すれば、スル
ーホールの1個当りの抵抗成分も測定出来るようになる
Usually, this pattern is placed on the outer periphery or corner of the chip, and a continuity test is performed at the end of the manufacturing process (after completion of the second conductive layer 3). It is thought that six through holes are insufficient to judge the quality of the through holes of the entire chip, and normally, if the space between pads 6 and 7 is open, it can only be determined that the chip is defective. If the number of through holes increases, the resistance component per through hole can also be measured.

しかし、スルーホールを多く取るためには第1図のチェ
ックパターン全体の面積が増加し、チップサイズが大き
くなってしまい得策ではない。このため従来は、コーナ
部等の一部分の小さな領域に多くて数十個程度のスルー
ホールを有したチェックパターンが設けられていた。従
って、スルーホールの良否判定1/[は不十分であシ、
スルーホールの良品率の精度が上げられないという欠点
があった。
However, in order to increase the number of through holes, the overall area of the check pattern shown in FIG. 1 increases, which increases the chip size, which is not a good idea. For this reason, conventionally, a check pattern having at most several dozen through holes was provided in a small area such as a corner. Therefore, through-hole quality judgment 1/[ is insufficient,
The drawback was that the accuracy of the quality of through holes could not be increased.

(発明の目的) 本発明の目的は、上記欠点を除去し、チップ寸法を大き
くすることなく、スルーホール・チェックパターン数を
増加し、スルーホールの成品率の判定精度を上げること
を可能としだ半導体集積回路装置を提供することにある
(Objective of the Invention) The object of the present invention is to eliminate the above-mentioned drawbacks, increase the number of through-hole check patterns without increasing the chip size, and improve the accuracy of determining the through-hole production rate. An object of the present invention is to provide a semiconductor integrated circuit device.

(発明の構成) 本発明の半導体集積回路装置は、半導体基板の一主面に
論理回路を構成する素子を規則的に繰返して配置し、前
記素子のうち所要の素子を金属配線で接続し所望の論理
回路を構成するマスタースライス方式の半導体集積回路
装置において、前記論理回路の構成に使用されなかった
素子領域及び配線領域に多層配線間の接続の良否検査用
スルーホールを設けたことを特徴として構成される。
(Structure of the Invention) A semiconductor integrated circuit device of the present invention has elements constituting a logic circuit arranged repeatedly on one main surface of a semiconductor substrate, and required elements among the elements are connected with metal wiring as desired. A master slice type semiconductor integrated circuit device that configures a logic circuit, characterized in that through holes for testing the quality of connections between multilayer wiring are provided in element areas and wiring areas that are not used in the configuration of the logic circuit. configured.

(実施例) 次に、本発明の実施例について図面を用いて説明する。(Example) Next, embodiments of the present invention will be described using the drawings.

第2図は本発明の筑1の実施例の平面図である。FIG. 2 is a plan view of an embodiment of the chiku 1 of the present invention.

この実施例は論理回路の構成時に使用されなかった素子
領域と配線領域の内、素子領域に検査用のスルーホール
を設けた例である。
This embodiment is an example in which a through-hole for testing is provided in the element area of the element area and wiring area that were not used when constructing the logic circuit.

第2図において、1はスルーホール、 2i[1導電層
、3は第2導電層である。この実施例では、8個のスル
ーホールが一つの基本セル領域8内の配線領域に設けて
いる。
In FIG. 2, 1 is a through hole, 2i[1 conductive layer, and 3 is a second conductive layer. In this embodiment, eight through holes are provided in a wiring area within one basic cell area 8.

不使用の基本セル上にこのスルーホール・チェックパタ
ーンを配置し25個の基本セルを多段接続すれば少くな
くとも200個のスルーホールが形成出来ることになる
。−万個の基本セルを有した集積回路の1%を利用(通
常、少くなくとも1係程度は不使用セルとなる。)して
第2図に示すようにスルーホール・チェックパターンを
配置、結線すれば、100個の不使用基本セルで800
個のスルーホールが直列接続されたことになり、スルー
ホールの良品率の判定はより精度が上がる。
By arranging this through-hole check pattern on unused basic cells and connecting 25 basic cells in multiple stages, at least 200 through-holes can be formed. - Utilizing 1% of the integrated circuit which has 10,000 basic cells (usually, at least one cell is unused) and arranging a through-hole check pattern as shown in Figure 2; If connected, 100 unused basic cells will yield 800
This means that through holes are connected in series, and the accuracy of determining the quality of through holes is improved.

第3図は本発明の第2の実施例の平面図である。FIG. 3 is a plan view of a second embodiment of the invention.

この実施例は、論理回路の構成時に使用されなかった配
線領域に検査用のスルーホールを設けた例である。
This embodiment is an example in which a through hole for inspection is provided in a wiring area that was not used when constructing a logic circuit.

第3図において、1はスルーホール、2は第1金属層、
3は第2金属層、9.9’は基本セル列、10は配線領
域、11は配線領域10内の不使用配線領域である。こ
の実施例では不使用配線領域11内に検査用のスルーホ
ールを12個設けている。
In FIG. 3, 1 is a through hole, 2 is a first metal layer,
3 is a second metal layer, 9.9' is a basic cell column, 10 is a wiring area, and 11 is an unused wiring area within the wiring area 10. In this embodiment, twelve through holes for inspection are provided in the unused wiring area 11.

このように1不使用配線領域11を多数用いてスルーホ
ール・チェックパターンを形成ftLIrf、、数百〜
数十個のスルーホールを有するチェックパターンとする
ことが出来る。また不使用基本セルを利用したスルーホ
ール・チェックパターンとも併用して利用することも出
来る。スルーホールの数を数百側以上有する場合、導通
状態においてスルーホールの抵抗成分が測定可能な大き
さになってくるので、導通抵抗の大小による判定が出来
るようにもなる。
In this way, a through-hole check pattern is formed using a large number of unused wiring areas ftLIrf, several hundred to
It can be a check pattern with several dozen through holes. It can also be used in conjunction with a through-hole check pattern that uses unused basic cells. When the number of through holes is on the order of several hundred or more, the resistance component of the through hole becomes measurable in the conductive state, so that it becomes possible to make a determination based on the magnitude of the conductive resistance.

尚、スルーホール・チェックパターンの一方は空パッド
に阪続するか、第1図に示すように探針用の小さなパッ
ドを不使用配線領域か不使用基本セル内に没けてもよい
。他方は基板尾接続するか空パッドに接続するか、ある
いは探針用の小さなパッドでもよい。更に第2図のスル
ーホール・チェックパターンを一つの基本ゲートとみな
し自動配置配線を行うことも出来る。
One of the through-hole check patterns may be connected to an empty pad, or a small pad for a probe may be sunk into an unused wiring area or an unused basic cell as shown in FIG. The other may be connected to the substrate tail, to an empty pad, or to a small pad for a probe. Furthermore, automatic placement and wiring can be performed by regarding the through-hole check pattern shown in FIG. 2 as one basic gate.

(発明の幼果) 以上詳細に説明したようく、本発明は、本来の論理回路
の構成に使用されなかった素子領域あるいは配線領域を
利用して多層配線接続の良否の検査用スルーホールを設
けるようにしたので、チップ面積を増加させるととなく
検査スルーホール数を増加させることができ、スルーホ
ールの良品率の判定精度を向ヒさせることができるとい
う効果を有する。
(Effects of the Invention) As explained in detail above, the present invention provides a through-hole for testing the quality of multilayer wiring connections by utilizing the element area or wiring area that was not used in the original configuration of the logic circuit. This has the effect that the number of through holes to be inspected can be increased without increasing the chip area, and the accuracy of determining the non-defective rate of through holes can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のスルーホール会チェックパターンの一例
の平面図、第2図は本発明の第1の実施例の平面図、第
3図は本発明の第2の実施例の平面図である。 1・・・・・・スルーホール、2・・・・・・第1金I
ANj、3・・・・・・第2金属層、4・・・・・・カ
バー、6,7・・・・・・探針用パッド、8・・・・・
・基本セル領域、9.9’・・・・・・基本セル列、】
0・・・・・・配線領域、11・・・・・・不使用配線
領域。 代理人 弁理士 内 原 音 第7図 第Z図
FIG. 1 is a plan view of an example of a conventional through-hole check pattern, FIG. 2 is a plan view of a first embodiment of the present invention, and FIG. 3 is a plan view of a second embodiment of the present invention. . 1...Through hole, 2...1st metal I
ANj, 3... Second metal layer, 4... Cover, 6, 7... Probe pad, 8...
・Basic cell area, 9.9'...Basic cell column,]
0... Wiring area, 11... Unused wiring area. Agent Patent Attorney Oto Hara Figure 7 Figure Z

Claims (1)

【特許請求の範囲】[Claims] 半導体基板の一主面に論理回路を構成する素子を規則的
に繰返して配置し、前記素子のうち所要の素子を金属配
線で接続し所望の論理回路を構成するマスタースライス
方式の半導体集積回路装置において、前記論理回路の構
成に使用されなかった素子領域及び配線領域に多層配線
間の接続の良否検査用スルーホールを設けたことを特徴
とする半導体集積回路装置。
A master slice type semiconductor integrated circuit device in which elements constituting a logic circuit are regularly and repeatedly arranged on one principal surface of a semiconductor substrate, and required elements among the elements are connected with metal wiring to constitute a desired logic circuit. 2. A semiconductor integrated circuit device according to claim 1, wherein through-holes for testing the quality of connections between multilayer interconnects are provided in element regions and interconnect regions that are not used in the configuration of the logic circuit.
JP8311484A 1984-04-25 1984-04-25 Semiconductor integrated circuit device Pending JPS60226140A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8311484A JPS60226140A (en) 1984-04-25 1984-04-25 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8311484A JPS60226140A (en) 1984-04-25 1984-04-25 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS60226140A true JPS60226140A (en) 1985-11-11

Family

ID=13793173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8311484A Pending JPS60226140A (en) 1984-04-25 1984-04-25 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS60226140A (en)

Similar Documents

Publication Publication Date Title
US5923047A (en) Semiconductor die having sacrificial bond pads for die test
US5754410A (en) Multi-chip module with accessible test pads
JPH0454971B2 (en)
US4486705A (en) Method of testing networks on a wafer having grounding points on its periphery
US5262719A (en) Test structure for multi-layer, thin-film modules
US7420229B2 (en) Failure analysis vehicle for yield enhancement with self test at speed burnin capability for reliability testing
JPH0992694A (en) Probe card and probe test method for semiconductor integrated circuit using the probe card
JP2001056345A (en) Probing card and its manufacture
CN101095057A (en) Probe head arrays
CN101358999B (en) Probe assembly
JP2874682B2 (en) Semiconductor device
US20080106279A1 (en) Probe card layout
EP0841573B1 (en) Test adapter module for providing access to a BGA device, system comprising the module and use of the module
JP4041663B2 (en) Semiconductor device and its inspection device
JPS60226140A (en) Semiconductor integrated circuit device
IE53794B1 (en) Large scale integration semiconductor device having monitor element and method of manufacturing the same
JPH11330256A (en) Semiconductor device and its manufacture
KR100216992B1 (en) A test board having a plurality of power supply wiring patterns
EP0849800A1 (en) Multichip module with differently packaged integrated circuits and method of manufacturing it
US6984997B2 (en) Method and system for testing multi-chip integrated circuit modules
JPH05136243A (en) Aging test pattern-provided semiconductor wafer
JPH02307266A (en) Semiconductor integrated circuit device
JPS58161336A (en) Semiconductor integrated circuit device
JPS6161439A (en) Master slice type semiconductor integrated circuit device
JP3466289B2 (en) Semiconductor device