JPS60225480A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPS60225480A JPS60225480A JP8122284A JP8122284A JPS60225480A JP S60225480 A JPS60225480 A JP S60225480A JP 8122284 A JP8122284 A JP 8122284A JP 8122284 A JP8122284 A JP 8122284A JP S60225480 A JPS60225480 A JP S60225480A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- film
- bump
- sensitive
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 239000007769 metal material Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 3
- 238000007747 plating Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 208000025174 PANDAS Diseases 0.000 description 1
- 208000021155 Paediatric autoimmune neuropsychiatric disorders associated with streptococcal infection Diseases 0.000 description 1
- 240000000220 Panda oleosa Species 0.000 description 1
- 235000016496 Panda oleosa Nutrition 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Abstract
Description
【発明の詳細な説明】
（イ）技術分野
本発明は、感圧素子上における加圧用突起の位置【正確
にして安定な感圧特性が得られるようにした半導体感圧
素子に関する口
（ロ）従来技術
従来、半導体を用いた感圧素子が種々知られて≠る。第
１図ｔｉｔ ＮＰＮ感圧トランジスタを用いた感圧素子
の一例を示しており、ｌはコレクタ領域となるシリコン
Ｎ形基板、２はベース領域となるＰ形不純物拡散層、３
Ｆｉエミツタ領域となるＮ形不純物拡散層、４は熱酸化
［％ ５はＣＶＤ法で形成し九引０諺膜、ａＦｉベース
電極、７はエミッタ電極、ａｔ１加圧針である。−壕エ
ミッタ領域３上に加圧針８を通して力が加わるとエミッ
タ・ベース接合の禁止帯幅が減少する九めエミッタ注入
効率が減少し、その結果コレクタ電流が変化することを
利用して加圧力を検出することができる（たとえば昭和
４７年４月１１日日刊工業新聞社発行の「半導体変換素
子」第１６５頁〜１６７頁に記載）。Detailed Description of the Invention (a) Technical field The present invention relates to a semiconductor pressure-sensitive element that is able to accurately and obtain stable pressure-sensitive characteristics, BACKGROUND OF THE INVENTION Various pressure-sensitive elements using semiconductors have been known in the past. Figure 1 shows an example of a pressure-sensitive element using an NPN pressure-sensitive transistor, where l is a silicon N-type substrate that becomes a collector region, 2 is a P-type impurity diffusion layer that becomes a base region, and 3
4 is a thermal oxidation film formed by CVD, an aFi base electrode, 7 is an emitter electrode, and at1 is a pressure needle. - When a force is applied to the trench emitter region 3 through the pressure needle 8, the forbidden band width of the emitter-base junction decreases.The emitter injection efficiency decreases, and as a result, the collector current changes. can be detected (for example, as described in "Semiconductor Conversion Element", pages 165 to 167, published by Nikkan Kogyo Shimbun on April 11, 1972).
このような半導体感圧素子にお−いては、加圧針８のエ
ミッタ領域３上での加圧位置がわずかでも興なると素子
の感圧特性が変化してしまう。In such a semiconductor pressure-sensitive element, if the pressure position of the pressure needle 8 on the emitter region 3 changes even slightly, the pressure-sensitive characteristics of the element change.
このため素子の感度を安定させることがむずかしく、高
い精度で位置合わせしようとすると素子実装コストが高
くなると−う問題がある。For this reason, it is difficult to stabilize the sensitivity of the element, and there is a problem that the cost of mounting the element increases when positioning with high precision is attempted.
（ハ）発明の目的および構成
本発明は上記の点にかんがみてなされたもので、半導体
感圧素子上における加圧位置を正確にして安定した感圧
特性を得ることを目的とし、この目的を遠戚する丸めに
半導体感圧素子の製造時に素子上に加圧用の突起を一体
に形成したものである。(c) Object and structure of the invention The present invention has been made in view of the above points, and aims to obtain stable pressure-sensitive characteristics by accurately applying pressure on a semiconductor pressure-sensitive element. This is a distantly related round device in which a pressure projection is integrally formed on the semiconductor pressure sensitive device during manufacture.
に）実施例 以下本発明を図面に基づいて説明する。) Example The present invention will be explained below based on the drawings.
第２図は本発明による半導体感圧素子の一実施例の断面
を示す図である。FIG. 2 is a cross-sectional view of one embodiment of the semiconductor pressure-sensitive element according to the present invention.
シリコンＮ形基板１にベース領域２とエミッタ領域３と
が形成場れ、ベース電極６およびエミッタ電極７はリン
グ状に形成される。これらの電極６．７の形成後保護膜
としてのＣＶＤ法による８１か膜５を形成する。ここま
での工程は第１図に示した従来の半導体感圧素子と同じ
である。その後素子全面に素子の表面を保護するための
ａｌその上にＮｉを真空蒸着する。そ゛して引Ｏ，膜Ｓ
の中央欠損部であるエミッタ領域上の所定部分以外をフ
ォトレジストにより１いメッキにて鋼バンプ１１を形成
する。その後フォトレジストを除去し、銅バンプ１１部
以外のｕｘＮ＋を除去することにより、Ｕ膜９、Ｎ！膜
１０％鋼バジグ１１からなる加圧用突起が完成する。A base region 2 and an emitter region 3 are formed on a silicon N-type substrate 1, and a base electrode 6 and an emitter electrode 7 are formed in a ring shape. After forming these electrodes 6.7, a film 81 is formed as a protective film by CVD. The steps up to this point are the same as those for the conventional semiconductor pressure-sensitive element shown in FIG. Thereafter, Ni is vacuum-deposited on Al and Ni for protecting the surface of the element over the entire surface of the element. Then pull O, membrane S
A steel bump 11 is formed by plating with photoresist except for a predetermined portion on the emitter region, which is the central defect. Thereafter, the photoresist is removed, and by removing uxN+ other than the copper bump 11 portion, the U film 9, N! A pressurizing protrusion made of a 10% film steel baggage 11 is completed.
第３図は本発明による半導体感圧素子の他の実施例の平
面図を示し、第４図はそのＡ−Ａ断面図である。FIG. 3 shows a plan view of another embodiment of the semiconductor pressure-sensitive element according to the present invention, and FIG. 4 is a cross-sectional view taken along the line AA.
この実施例は本発明による加圧突起の構造をラテラルＰ
ＮＰトランジスタに適用したものであり、１２はベース
領域となるシリコンＮ形基板、１３はＮ拡散層、１４は
コレクタ領域となるＰ形不純物拡散層％１５は熱酸化膜
（第３図には図示せず）、１ＧはＣＶＤ法・、で形成し
たＳＩＯ＊ ＩＩ （第３図には図示せず）、１７ｔ；
ｔベース電極、１８はコレクタ電極、１９はエミッタ電
極、２０はエミッタ領域である。この感圧素子はＮ形ベ
ース領域１２のコレクタ領域１４とエミッタ領域２０と
で狭まれ九部分を加圧することによりキャリアのライフ
タイムを変化させその結果コレクタ電流が変化すること
を利用して加圧力を検出するものである。This example shows the structure of the pressure protrusion according to the present invention in the lateral P
This is applied to an NP transistor, where 12 is a silicon N-type substrate that will become a base region, 13 is an N-diffusion layer, 14 is a P-type impurity diffusion layer that will be a collector region, and 15 is a thermal oxide film (see Figure 3). (not shown), 1G is SIO* II formed by CVD method (not shown in FIG. 3), 17t;
t base electrode, 18 a collector electrode, 19 an emitter electrode, and 20 an emitter region. This pressure-sensitive element is constructed by applying pressure to the N-type base region 12, which is narrowed by the collector region 14 and the emitter region 20, thereby changing the lifetime of carriers, and utilizing the fact that the collector current changes as a result. This is to detect.
本実施例も通常の方法にて２チラルＰＮＰ ）ランジス
タを形成した後、前記実施例と同様の方法にて、Ｕ膜９
、Ｎ１膜１０および銅バンプ１１を形成することにより
加圧突起が形成される。In this example, after forming a 2-chiral PNP transistor in the usual manner, a U film 9 was formed in the same manner as in the previous example.
, the N1 film 10 and the copper bump 11 are formed to form a pressure projection.
ラテラルＰＮＰ ）ランジスタにセいては、ベース幅は
５〜ｌＯμｍと狭いため従来の感圧素子のように加圧針
を所定位置に立てることは、困難であるが、本発明のよ
うに加圧突起を一体形成することにより加圧位置を所定
位置にすることが容易になり安定した感圧特性を得るこ
とができる。For lateral PNP) transistors, the base width is as narrow as 5 to 10 μm, so it is difficult to set the pressure needle in a predetermined position like in conventional pressure-sensitive elements. By integrally forming it, it is easy to set the pressurizing position to a predetermined position, and stable pressure-sensitive characteristics can be obtained.
（ホ）発明の詳細
な説明したように、本発明においては、感圧素子製造時
に素子上に加圧用突起を素子と一体に形成するようにし
たので、加圧部が常に素子上の一定の場所に正確に形成
され、素子の感圧特性を安定させることができるととも
に素子の実装を容易にすることができる・(E) As described in detail, in the present invention, the pressure projection is integrally formed on the element during manufacture of the pressure sensitive element, so that the pressure part is always located at a certain point on the element. It can be formed precisely in place, stabilize the pressure-sensitive characteristics of the element, and facilitate the mounting of the element.
第１図は従来の半導体感圧トランジスタ断面図、第２図
は本発明による半導体感圧素子の一実施例としてのＮＰ
Ｎ感圧トランジスタの断面図、第３図は本発明による半
導体感圧素子の他の実施例としてのラテラルＰＮＰ感圧
トランジスタの平面図、第４図は第３図に示し九感圧ト
ランジスタのＡ−Ａ断面図である。
９・−・アルミニウム膜、１０・・・ニッケルｉｌｌ、
ｘｔ・・・銅パンダ、１２・・・シリコンＮ形基ｆＥ（
ヘ−Ｘ領域）、１３・・・Ｎ拡散層、１４・・・コレク
タ領域、１５ ・・・熱酸化膜、１６− ＣＶ Ｄ ５
ｉｆｔ膜、１７ ・・・ベース１１１極、１８・・・コ
レクタ電極、１９・・・エミッタ電極、２０・・・エミ
ッタ領域
特許出願人 日産自動車株式会社
代理人弁理土鈴木弘男
第１図
第３図
第４図
１４ ＺＩＪ １４FIG. 1 is a cross-sectional view of a conventional semiconductor pressure-sensitive transistor, and FIG. 2 is a cross-sectional view of an NP as an embodiment of a semiconductor pressure-sensitive element according to the present invention.
3 is a cross-sectional view of a lateral PNP pressure-sensitive transistor as another embodiment of the semiconductor pressure-sensitive element according to the present invention; FIG. 4 is a cross-sectional view of a lateral PNP pressure-sensitive transistor shown in FIG. 3; -A sectional view. 9... Aluminum film, 10... Nickel ill,
xt...Copper panda, 12...Silicon N-type group fE(
13... N diffusion layer, 14... Collector region, 15... Thermal oxide film, 16- CV D 5
ift film, 17...Base 111 pole, 18...Collector electrode, 19...Emitter electrode, 20...Emitter region Patent applicant: Nissan Motor Co., Ltd. Attorney Hiroo Suzuki Figure 1 Figure 3 Figure 4 14 ZIJ 14
Claims (2)
位置に加圧用突起を一体に形成したことを特徴とする半
導体感圧素子。(1) A semiconductor pressure-sensitive element characterized in that a pressure projection is integrally formed at a predetermined position other than the electrode portion on the element during manufacture of the pressure-sensitive element.
範囲第１項に記載の半導体感圧素子。(2) The semiconductor pressure-sensitive element according to claim 1, wherein the pressure projection is made of a metal material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8122284A JPS60225480A (en) | 1984-04-24 | 1984-04-24 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8122284A JPS60225480A (en) | 1984-04-24 | 1984-04-24 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60225480A true JPS60225480A (en) | 1985-11-09 |
Family
ID=13740450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8122284A Pending JPS60225480A (en) | 1984-04-24 | 1984-04-24 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60225480A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009031045A (en) * | 2007-07-25 | 2009-02-12 | Seiko Epson Corp | Pressure sensor |
-
1984
- 1984-04-24 JP JP8122284A patent/JPS60225480A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009031045A (en) * | 2007-07-25 | 2009-02-12 | Seiko Epson Corp | Pressure sensor |
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