JPS60219746A - Method of detecting resist pattern - Google Patents
Method of detecting resist patternInfo
- Publication number
- JPS60219746A JPS60219746A JP59076874A JP7687484A JPS60219746A JP S60219746 A JPS60219746 A JP S60219746A JP 59076874 A JP59076874 A JP 59076874A JP 7687484 A JP7687484 A JP 7687484A JP S60219746 A JPS60219746 A JP S60219746A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- reflected light
- intensity
- resist pattern
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000007689 inspection Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 5
- 238000001514 detection method Methods 0.000 abstract description 8
- 230000000007 visual effect Effects 0.000 abstract description 6
- 230000002950 deficient Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 14
- 238000010586 diagram Methods 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
【発明の詳細な説明】
ｆａｌ 発明の技術分野
本発明は、基体例えばウェハの表面にあるレジストパタ
ーンの検査方法に関す。DETAILED DESCRIPTION OF THE INVENTION fal TECHNICAL FIELD OF THE INVENTION The present invention relates to a method for inspecting a resist pattern on the surface of a substrate, such as a wafer.
（ｂｌ 技術の背景
半導体装置の製造において、ウェハの微細加工のためホ
トリソグラフィ技術が多用されている。Background of the Technology In the manufacture of semiconductor devices, photolithography technology is frequently used for microfabrication of wafers.
それは、ウェハ表面にレジストを塗布し、マスクを介し
た露光と現像によりレジストパターンを形成し、該パタ
ーンをマスクにして該ウェハをエツチングする工法であ
る。従って、レジストパターンの良否がウェハの微細加
工の良否に大きく影響する。This is a method in which a resist is applied to the surface of a wafer, a resist pattern is formed by exposure and development through a mask, and the wafer is etched using the pattern as a mask. Therefore, the quality of the resist pattern greatly influences the quality of fine processing of the wafer.
＋ｃ＋ 従来技術と問題点
第１図はレジストパターン断面形状の良否を説明する図
（ａｌ （ｂｌで、１はパターン、ＩＳは側面、ｌｕは
上面、２はウェハ、ａ、ｂ、ｃは寸法をそれぞれ示す。+c+ Prior art and problems Figure 1 is a diagram explaining the quality of the resist pattern cross-sectional shape (al (bl), 1 is the pattern, IS is the side surface, lu is the top surface, 2 is the wafer, and a, b, and c are the dimensions. Each is shown below.
表面にレジストパターン１を有し図ｆａ）に平面視を示
したウェハ２のＡ１−＾２断面は図（ｂ１図示の如くで
ある。図（ｂ１図示において、パターンｌの断面形状は
、一般に略矩形であることが望ましいが、パターン１形
成の工程に不備があると、パターン１の側面ＩＳが傾斜
する場合がある。そして、その傾斜寸法ａのパターン１
の幅寸法すに対する割合が大きい場合には、幅寸法すも
所定の幅から外れる場合が多い。この状態で後のエツチ
ング工程を進めると、寸法すが図示のように正の場合に
はエツチングが過小になり、負の場合には過大になって
、所定の加工結果が得られなくなる。The A1-^2 cross section of the wafer 2 having the resist pattern 1 on its surface and shown in plan view in Figure fa is as shown in Figure b1. Although it is desirable that the pattern 1 be rectangular, if there is a defect in the process of forming the pattern 1, the side surface IS of the pattern 1 may be inclined.
When the ratio of the width to the width is large, the width often deviates from the predetermined width. If the subsequent etching step is carried out in this state, as shown in the figure, if the dimension is positive, the etching will be too small, and if it is negative, the etching will be too much, making it impossible to obtain the desired processing result.
このため、通常、パターン１の形成が終わったところで
検査をするが、半導体装置製造の場合のパターン１は、
寸法すが数μｍ程度ないしそれ以下が多く、然も厚さ寸
法Ｃが約１μｍ程度であるため、断面形状に関する検査
には、適当な検査機が無く作業者の高度な熟練による目
視判定に依存せざるを得ない問題がある。For this reason, inspection is usually performed after the formation of pattern 1, but pattern 1 in the case of semiconductor device manufacturing is
Since the dimensions of the cross-sectional shape are often around several μm or less, and the thickness dimension C is around 1 μm, there is no suitable inspection machine for inspection of the cross-sectional shape, and it relies on visual judgment by highly skilled workers. There is a problem that cannot be helped.
＋ｄｌ 発明の目的
本発明の目的は上記従来の問題に鑑み、レジストパター
ンの断面形状を検査するに際して、作業者の目視判定に
よらずに判定可能な検査方法を提供するにある。+dl OBJECTS OF THE INVENTION In view of the above-mentioned conventional problems, an object of the present invention is to provide an inspection method capable of inspecting the cross-sectional shape of a resist pattern without relying on visual judgment by an operator.
（ｅ） 発明の構成
上記目的は、表面にレジストパターンを有する基体に該
表面の上方から光を照射して、該パターンの縁と交叉す
る線に沿った領域における該上方への反射光の強さの最
大値と最小値とを検知し、該最大値と該最小値との比の
値で良否を判定することを特徴とするレジストパターン
検査方法によって達成される。(e) Structure of the Invention The above object is to irradiate a substrate having a resist pattern on its surface with light from above the surface, and to increase the intensity of the reflected light upward in a region along a line intersecting the edge of the pattern. This is achieved by a resist pattern inspection method characterized in that a maximum value and a minimum value of the thickness are detected, and pass/fail is determined based on the ratio between the maximum value and the minimum value.
前記レジストパターンの前述した寸法ａが正に傾斜した
場合、該パターン側面における反射光の強さは、前記基
体表面における反射光および該パターン上面における反
射光の強さより小さく、然も、該側面の傾斜角により変
化して該傾斜が直立に近いところで最小値となること、
また、前述の寸法ａが負に傾斜した場合、該側面におけ
る反射光が存在しないこと、更に、通常は該パターン上
面における反射光の強さが該基体表面における反射光の
強さより大きいことがら、前記最大値と前記最小値との
比の値で該パターンの断面形状の良否を判定することが
可能になる。このことより検査機を構成することが可能
になって、作業者の目視判定を除去することが可能にな
る。When the above-mentioned dimension a of the resist pattern is positively inclined, the intensity of the reflected light on the side surface of the pattern is smaller than the intensity of the reflected light on the substrate surface and the intensity of the reflected light on the upper surface of the pattern. varies depending on the inclination angle and reaches a minimum value when the inclination is close to upright;
Further, when the above-mentioned dimension a is negatively inclined, there is no reflected light on the side surface, and furthermore, since the intensity of the reflected light on the upper surface of the pattern is usually greater than the intensity of the reflected light on the surface of the substrate, It becomes possible to determine the quality of the cross-sectional shape of the pattern based on the value of the ratio between the maximum value and the minimum value. This makes it possible to configure an inspection machine and eliminate visual judgment by the operator.
（ｆｌ 発明の実施例
以下本発明の実施例を図により説明する。全図を通じ同
一符号は同一対象物を示す。(fl Embodiments of the Invention Hereinafter, embodiments of the present invention will be described with reference to the drawings. The same reference numerals indicate the same objects throughout the drawings.
第２図は本発明による検査方法の原理を説明する図（ａ
ｌ （ｂｌ、第３図はレジストパターン断面形状の良否
による反射光の状態を示した図（１ａ）、（１ｂ）、〜
（３ａ）、（３ｂ）、第４図は本発明による検査方法を
行う検査機の一実施例の構成を示した図、第５図は本発
明による検査方法でレジストパターンの検査が不能な場
合を示した図で、ＩＩは光源、Ｉ２．１３．１４はレン
ズ系、１５はハーフミラ−１１６は検出機構、１７は検
知回路、１８は判定回路、１９は表示機構、Ｌは照射光
、Ｌｌ、Ｉ２、Ｉ３は反射光、ｖｌは最大値、ｖ２は最
小値、ｖ３は判定値をそれぞれ示す。FIG. 2 is a diagram explaining the principle of the inspection method according to the present invention (a
l (bl, Figure 3 is a diagram showing the state of reflected light depending on the quality of the cross-sectional shape of the resist pattern (1a), (1b), ~
(3a), (3b), FIG. 4 is a diagram showing the configuration of an embodiment of an inspection machine that performs the inspection method according to the present invention, and FIG. In the figure, II is a light source, I2.13.14 is a lens system, 15 is a half mirror, 116 is a detection mechanism, 17 is a detection circuit, 18 is a judgment circuit, 19 is a display mechanism, L is irradiation light, Ll, I2 and I3 represent reflected light, vl represents a maximum value, v2 represents a minimum value, and v3 represents a determination value, respectively.
第２図（８）図示において、レジストパターン１を有す
るウェハ２の表面に上方から光りを照射すると、その反
射光は場所により強さが異なる反射光Ｌ１、Ｉ２．１，
３となる。Ｌｌはパターン１の上面１ｕからの反射光、
Ｉ２は同じく側面１ｓからの反射光、Ｉ３はウェハ２の
表面からの反射光である。そして、その強さを第１図図
示Ａｌ−４２の線に沿って示すと、一般に第２図ｆｂ）
図示のようになる。第２図ｔｂ）図示において、上面１
ｕの反射率が通常ウェハ１の表面の反射率より大きいの
で、反射光Ｌ１の強さは反射光Ｌ３の強さより大きく、
また、側面１ｓが傾斜しているため、反射光Ｌ２の強さ
は、反射光Ｌ１、Ｉ３の強さより小さくなっている。そ
して、反射光１，２の強さは、側面１ｓの傾斜角により
変化して該傾斜が直立に近いところで最小値となる。In the illustration in FIG. 2(8), when light is irradiated from above onto the surface of the wafer 2 having the resist pattern 1, the reflected light is reflected light L1, I2.1, which has different intensity depending on the location.
It becomes 3. Ll is the reflected light from the upper surface 1u of pattern 1;
Similarly, I2 is the reflected light from the side surface 1s, and I3 is the reflected light from the surface of the wafer 2. And, if the strength is shown along the line of Al-42 shown in Figure 1, it is generally shown in Figure 2 fb)
It will look like the illustration. Figure 2 tb) In the illustration, the top surface 1
Since the reflectance of u is usually larger than the reflectance of the surface of the wafer 1, the intensity of the reflected light L1 is larger than the intensity of the reflected light L3,
Further, since the side surface 1s is inclined, the intensity of the reflected light L2 is smaller than the intensity of the reflected lights L1 and I3. The intensities of the reflected lights 1 and 2 vary depending on the inclination angle of the side surface 1s, and reach a minimum value when the inclination is close to upright.
それで、パターン１の良否による反射光Ｌｌ、 Ｉ２、
Ｉ３の状態を示すと第３図のようになる。第３図におい
て、図（１ａ）は良好なパターンｌを示し、この場合の
第２図山）に対応した図が図（ｌｂ）である。また、図
（２ａ）は前述した寸法ａが正で不良なパターン１を、
図（３ａ）は寸法ａが負で不良なパターンｌを示してお
り、それぞれの第２図（ｂｌに対応した図が図（２ｂ）
、図（３ｂ）である９図（１ｂ）と図（２ｂ）との比較
において、図（ｌｂ）図示の反射光Ｌ２の強さは常に図
（２ｂ）図示の反射光Ｌ２の強さより小さく、また、図
（３ｂ）図示においては、パターン１の側面Ｉｓが上面
１ｕに遮蔽されるため反射光Ｌ２が存在しない。Therefore, the reflected light Ll, I2, depending on the quality of pattern 1,
The state of I3 is shown in FIG. In FIG. 3, Figure (1a) shows a good pattern l, and Figure (lb) corresponds to the pattern 1 in Figure 2 in this case. In addition, Figure (2a) shows the defective pattern 1 whose dimension a is positive as described above.
Figure (3a) shows a defective pattern l with a negative dimension a, and the figure corresponding to each figure 2 (bl) is Figure (2b).
, Figure (3b) is 9 In comparing Figure (1b) and Figure (2b), the intensity of the reflected light L2 shown in Figure (lb) is always smaller than the intensity of the reflected light L2 shown in Figure (2b); Moreover, in the illustration in FIG. 3B, the side surface Is of the pattern 1 is shielded by the upper surface 1u, so that the reflected light L2 does not exist.
このことから、反射光Ｌ１、Ｉ２を検知してＬｌ／１．
２をめ、この値が指定値より大きい場合には良、小さい
場合には不良と判定する方法によって、特に側面ＩＳの
傾斜に着目したパターンｌの断面形状の検査が可能にな
る。然も、この方法によって良と判定されるためには、
パターン１の形成工程が正常であることを必要とするた
め、この方法は、側面１ｓ０）傾斜のみならず、間接的
に他の項目例えばパターン１の細部の形状などが正常で
あるか否かの判定も兼ねることが可能である。かくして
、従来作業者の高度な熟練に依存していた目視判定を除
去することが可能になる。From this, the reflected lights L1 and I2 are detected and Ll/1.
2, and if this value is larger than the specified value, it is judged as good, and if it is smaller than the specified value, it is judged as bad, which makes it possible to inspect the cross-sectional shape of the pattern l, paying particular attention to the inclination of the side surface IS. However, in order to be judged as good using this method,
Since it is necessary that the formation process of pattern 1 is normal, this method not only determines whether the side surface 1s0) slope is normal but also indirectly determines whether other items such as the shape of the details of pattern 1 are normal or not. It can also serve as a judgment. In this way, it becomes possible to eliminate visual judgment, which conventionally relied on the high level of skill of the operator.
本検査方法を実施するための検査機の一実施例の構成は
第４図図示の如くである。第４図図示において、照射光
りは、光源１１から出射され、レンズ系１２、ハーフミ
ラ−１５、レンズ系１３を通ってウェハ２を照射する。The configuration of an embodiment of the inspection machine for carrying out this inspection method is as shown in FIG. In FIG. 4, irradiation light is emitted from a light source 11, passes through a lens system 12, a half mirror 15, and a lens system 13, and irradiates the wafer 2.
反射光Ｌ１、Ｌ２、Ｌ３はレンズ系１３、ハーフミラ−
１５、レンズ系１４を通って検出機構１６に入ってウェ
ハ２表面の拡大画像を結ぶ。検出機構１６は、該拡大画
像の第１図（ａ１図示Ａｌ−Ａ２線に対応するような線
に沿った領域の明るさを、例えば光電子増倍管（Ｐｏｔ
ｏｍｕｔｊｐｌ １ｅｒ）の走査によって検出し、第２
図（ｂｌの横軸を時間軸にした同図図示の出力を検知回
路１７に送る。検知回路１７は、該出力の最大値Ｖｌ
（第２図（ｂ）図示のＬｌに対応）と最小値Ｖ２ （第
２図（ｂ１図示のＬ２に対応）を検知して、Ｖｌとｖ２
とを判定回路１８に送る。判定回路１８は、Ｖ】／Ｖ２
を計算し、Ｖｌ／Ｖ２を予め入力されている判定値ｖ３
と比較して良否の判定を行い、判定信号を表示機構１９
に送る。表示機構１９は、該判定信号を作業者が認識出
来るように例えばランプ表示する。The reflected lights L1, L2, and L3 are transmitted through the lens system 13 and the half mirror.
15, passes through the lens system 14 and enters the detection mechanism 16 to form an enlarged image of the surface of the wafer 2. The detection mechanism 16 detects the brightness of a region along a line such as that corresponding to the Al-A2 line shown in FIG.
omutjpl 1er), and the second
The output shown in the figure (with the horizontal axis of bl as the time axis) is sent to the detection circuit 17.
(corresponding to Ll shown in Fig. 2 (b)) and the minimum value V2 (corresponding to L2 shown in Fig. 2 (b1)), Vl and v2 are detected.
is sent to the determination circuit 18. The determination circuit 18 has a voltage of V]/V2
is calculated, and Vl/V2 is determined as the judgment value v3 that has been input in advance.
The display mechanism 19 determines whether the quality is good or not by comparing the
send to The display mechanism 19 displays, for example, a lamp so that the operator can recognize the determination signal.
この検査機においては、Ｖｌ／Ｖ２は前述のＬｌ／Ｌ２
に対応し、ｖ３は良否を判定するためにＬｌ／Ｌ２を比
較する前述の指定値に対応しているので、本発明の方法
による検査が実施される。In this inspection machine, Vl/V2 is the aforementioned Ll/L2
, and v3 corresponds to the above-mentioned specified value for comparing Ll/L2 to determine pass/fail, so the inspection by the method of the present invention is performed.
なお、第５図は、本発明による検査方法でレジストパタ
ーンの検査が不能である場合の第２図１ｂ）に対応した
図である。図示においては、反射光Ｌ３の強さが反射光
Ｌ１の強さより大きくなっている。Note that FIG. 5 is a diagram corresponding to FIG. 2 1b) when the resist pattern cannot be inspected by the inspection method according to the present invention. In the illustration, the intensity of reflected light L3 is greater than the intensity of reflected light L1.
このような場合に該検査が不能になるのは、反射光の強
さの最大値がＬ３の値になり、判定を誤るためであり、
ウェハ２の表面が例えばアルミニウムである場合に生ず
る。しかしながら、半導体装置の製造におけるレジスト
パターンの検査においては、第５図図示のようになる比
率が小さいので、本願の発明者は、本発明による検査方
法の導入によって作業品質の向上と経済性の点で大きな
効果をあげることを確認した。In such a case, the test becomes impossible because the maximum value of the intensity of the reflected light becomes the value of L3, which leads to incorrect judgment.
This occurs when the surface of the wafer 2 is made of aluminum, for example. However, in the inspection of resist patterns in the manufacture of semiconductor devices, the ratio as shown in FIG. 5 is small. It was confirmed that it had a great effect.
また、本発明による検査方法は、レジストパターンの場
合に限られず、段差を有するパターンで該パターンの側
面の傾斜が略直立していることを確認する検査に適用可
能であることは、上記の説明から容易に類推可能である
。Further, as explained above, the inspection method according to the present invention is not limited to the case of a resist pattern, but can be applied to an inspection of a pattern having a step to confirm that the slope of the side surface of the pattern is substantially upright. It can be easily inferred from
ｆｇｌ 発明の効果
以上に説明したように、本発明による構成によれば、レ
ジストパターンの断面形状を検査するに際して、作業者
の目視判定によらずに判定可能な検査方法を捷供するこ
とが出来て、高度の熟練を有する作業者を要せずして、
検査作業の品質向上と経済化を可能にさせる効果がある
。fgl Effects of the Invention As explained above, according to the configuration of the present invention, when inspecting the cross-sectional shape of a resist pattern, it is possible to provide an inspection method that allows determination without visual judgment by an operator. , without requiring highly skilled workers,
This has the effect of making it possible to improve the quality of inspection work and make it more economical.
第１図はレジストパターン断面形状の良否を説明する図
（ａｔ （ｂｌ、第２図は本発明による検査方法の原理
を説明する図（ａｔ （ｂｌ、第３図はレジストパター
ン断面形状の良否による反射光の状態を示した図（１ａ
）、（ｌｂ）、〜（３ａ）、（３ｂ）、第４図は本発明
による検査方法を行う検査機の一実施例の構成を示した
図、第５図は本発明による検査方法でレジストパターン
の検査が不能な場合を示した図である。
図面において、ｌはパターン、１ｓは側面、１ｕは上面
、２はウェハ、１１は光源、１２．１３．１４はレンズ
系、１５はハーフミラ−１１６は検出機構、１７は検知
回路、１８は判定回路、１９は表示機構、ａ、ｂ、Ｃは
寸法、Ｌは照射光、Ｌｌ、 Ｌ２、Ｌ３は反射光、ｖ１
ハ最大値、ｖ２は最小値、ｖ３は判定値をそれぞれ示す
。
茶 Ｉ Ｋ
ギ３ 圀
第 ５ 口
／］／−Ａ２Fig. 1 is a diagram explaining the quality of the resist pattern cross-sectional shape (at (bl), Figure 2 is a diagram explaining the principle of the inspection method according to the present invention (at (bl), Figure 3 is a diagram explaining the quality of the resist pattern cross-sectional shape Diagram showing the state of reflected light (1a
), (lb), ~(3a), (3b), FIG. 4 is a diagram showing the configuration of an embodiment of an inspection machine that performs the inspection method according to the present invention, and FIG. FIG. 6 is a diagram showing a case where pattern inspection is impossible. In the drawings, l is a pattern, 1s is a side surface, 1u is a top surface, 2 is a wafer, 11 is a light source, 12, 13, 14 is a lens system, 15 is a half mirror, 116 is a detection mechanism, 17 is a detection circuit, and 18 is a judgment circuit. , 19 are display mechanisms, a, b, and C are dimensions, L is irradiation light, Ll, L2, and L3 are reflected lights, v1
C indicates the maximum value, v2 indicates the minimum value, and v3 indicates the determination value. Tea I K Gi 3 Kuni 5 Kuchi/]/-A2
Claims (1)
ら光を照射して、該パターンの縁と交叉する線に沿った
領域における該上方への反射光の強さの最大値と最小値
とを検知し、該最大値と該最小値との比の値で良否を判
定することを特徴とするレジストパターン検査方法。A substrate having a resist pattern on its surface is irradiated with light from above the surface, and the maximum and minimum values of the intensity of the upwardly reflected light in a region along a line intersecting the edge of the pattern are detected. A resist pattern inspection method characterized in that pass/fail is determined based on a ratio value between the maximum value and the minimum value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59076874A JPS60219746A (en) | 1984-04-17 | 1984-04-17 | Method of detecting resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59076874A JPS60219746A (en) | 1984-04-17 | 1984-04-17 | Method of detecting resist pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60219746A true JPS60219746A (en) | 1985-11-02 |
| JPH0120530B2 JPH0120530B2 (en) | 1989-04-17 |
Family
ID=13617780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59076874A Granted JPS60219746A (en) | 1984-04-17 | 1984-04-17 | Method of detecting resist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60219746A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1140476A (en) * | 1997-07-18 | 1999-02-12 | Nikon Corp | Method for selecting exposing condition and inspection device used therefor |
-
1984
- 1984-04-17 JP JP59076874A patent/JPS60219746A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1140476A (en) * | 1997-07-18 | 1999-02-12 | Nikon Corp | Method for selecting exposing condition and inspection device used therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0120530B2 (en) | 1989-04-17 |
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