JPS60218828A - Formation of deposited film - Google Patents
Formation of deposited filmInfo
- Publication number
- JPS60218828A JPS60218828A JP7492384A JP7492384A JPS60218828A JP S60218828 A JPS60218828 A JP S60218828A JP 7492384 A JP7492384 A JP 7492384A JP 7492384 A JP7492384 A JP 7492384A JP S60218828 A JPS60218828 A JP S60218828A
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- film
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- silicon
- deposited film
- hydrogen
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/487—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using electron radiation
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- H01L21/02436—Intermediate layers between substrates and deposited layers
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Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明はシリコンを含有する堆積膜、とシわけ光導電膜
、半導体膜あるいは絶縁体膜などとして有用なアモルフ
ァスシリコン（以下、ａ−８１という）あるいは多結晶
シリコンの堆積膜を形成するのに好適な方法に関する。Detailed Description of the Invention [Technical Field] The present invention relates to amorphous silicon (hereinafter referred to as a-81) or polycrystalline silicon, which is useful as a deposited film containing silicon, a photoconductive film, a semiconductor film, an insulating film, etc. The present invention relates to a method suitable for forming a deposited film of crystalline silicon.
従来、例えばａ−８１の堆積膜を、５ｌ）Ｉ４又はＳｉ
２Ｈ６を原料として用いたグロー放電堆積法又は熱エネ
ルギー堆積法で形成することが知られている。即ち、５
ｉｎ４やＳ ｉ ２Ｈ６を電気エネルギーや熱エネルギ
ーを用いて励起・分解して基体上にａ−８１の堆積膜を
形成し、この膜を種々の目的で利用することが周知であ
る。Conventionally, for example, a deposited film of a-81 was deposited using 5l) I4 or Si.
It is known to form by a glow discharge deposition method or a thermal energy deposition method using 2H6 as a raw material. That is, 5
It is well known to form a deposited film of a-81 on a substrate by exciting and decomposing in4 or S i 2H6 using electrical energy or thermal energy, and to utilize this film for various purposes.
しかし、これら８１Ｈ４及びＳ１□Ｈ６を原料として用
いた場合、グロー放電堆積法においては、高出力下で堆
積中の膜への放電エネルギーの影響が大きく、再現性の
ある安定した条件とする制御が難しい。特に、広面積、
厚膜の堆積膜を形成する場合に、これが顕著である。However, when these 81H4 and S1□H6 are used as raw materials, in the glow discharge deposition method, the discharge energy has a large influence on the film being deposited under high output, and it is difficult to control the conditions to maintain reproducible and stable conditions. difficult. In particular, large areas
This is noticeable when forming a thick deposited film.
また、熱エネルギー堆積法においても、高温が必要とな
ることから、使用される基体が限定されると共に、高温
によＪｌｌ ａ−８１中の有用な結合水素原子が離脱し
てしまう確率が増え、所望の特性が得にくくなる。In addition, the thermal energy deposition method also requires high temperatures, which limits the substrates that can be used, and increases the probability that useful bonded hydrogen atoms in Jll a-81 will detach due to high temperatures. It becomes difficult to obtain desired characteristics.
この様に、８１Ｈ４及びＳｉ２Ｈ６を用いて堆積膜を形
成する場合、均一な電気的・光学的特性及び品質の安定
性の確保が難しく、堆積中の膜表面の乱れ及びバルク内
の欠陥が生じ易いなどの解決されるべき問題点が残され
ているのが現状である。In this way, when forming a deposited film using 81H4 and Si2H6, it is difficult to ensure uniform electrical and optical properties and quality stability, and it is easy to cause disturbances on the film surface and defects in the bulk during deposition. At present, there are still problems that need to be resolved.
そこで、近年、これらの問題点を解消すべく、５１ｆ（
４及びＳｉ２Ｈ６を原料とするａ−８ｔの光エネルギー
堆積法（光ｃｖｎ法）が提案され、注目を集めている。Therefore, in recent years, in order to solve these problems, 51f (
A light energy deposition method (optical CVN method) of A-8T using 4 and Si2H6 as raw materials has been proposed and is attracting attention.
この光エネルギー堆積法によると、ａ−８１堆積膜を低
温で作製できる利点などにょシ、上記問題点を大幅に改
善することができる。しかしながら、光エネルギーとい
った比較的僅少な励起エネルギー下でのＳｉＨ４及び５
１２Ｈ６を原料とした光エネルギー堆積法では、飛躍的
に効率の良い分解を期待することができないため、成膜
速度の向上が期待できず、量産性に難点があるという新
たな問題点が生じている。According to this optical energy deposition method, the above-mentioned problems can be greatly improved, including the advantage that the A-81 deposited film can be produced at a low temperature. However, SiH4 and 5 under relatively small excitation energy such as light energy
With the optical energy deposition method using 12H6 as a raw material, it is not possible to expect dramatically efficient decomposition, so an improvement in the film formation rate cannot be expected, and a new problem has arisen in that there are difficulties in mass production. There is.
本発明は、現状におけるこれら問題点を解消すべくなさ
れたものである。The present invention has been made to solve these current problems.
〔発明の目的〕
本発明の目的は、高品質を維持しっつ成膜速度を高くす
ることのできるシリコンを含有する堆積膜の形成方法を
提供することにある。[Object of the Invention] An object of the present invention is to provide a method for forming a silicon-containing deposited film that can increase the film formation rate while maintaining high quality.
本発明の他の目的は、広面積、厚膜の場合においても、
均一な電気的・光学的特性及び品質の安定性を確保しつ
つ高品質のシリコンを含有する堆積膜を作製することの
できる堆積膜形成方法を提供することにある。Another object of the present invention is that even in the case of a large area and a thick film,
An object of the present invention is to provide a method for forming a deposited film that can produce a deposited film containing high quality silicon while ensuring uniform electrical and optical characteristics and stability of quality.
上記目的は、基体を収容した室内に、一般式：Ｓ’ｎ′
ＸｒｎＹｔ（Ｘ及びＹはそれぞれ別異のハロダン原子、
ｎは１〜６の整数、ｍ及びｔはそれぞれ１以上の整数で
あシ、ｍ＋ｔ＝２ ｎ＋２である。）で表わされる鎖状
ハロダン化ケイ素化合物及び水素の気体状雰囲気を形成
し、光エネルギーを利用することによって前記化合物及
び水素を励起して分解し、前記基体上にシリコンの堆積
膜を形成することを特徴とする堆積膜形成方法によって
達成される。For the above purpose, the general formula: S'n' is
XrnYt (X and Y are different halodane atoms,
n is an integer of 1 to 6, m and t are each an integer of 1 or more, and m+t=2 n+2. ) forming a gaseous atmosphere of a chain silicon halide compound represented by the formula () and hydrogen, and using light energy to excite and decompose the compound and hydrogen to form a deposited silicon film on the substrate. This is achieved by a deposited film forming method characterized by the following.
本発明方法によって形成されるシリコンを含有する堆積
膜は、結晶質でも非晶質で４．よく、膜中のシリコンの
結合は、オリゴマー状からＩリマー状までの何れの形態
でもよい。また、原料中の水素原子及びハロダン原子な
どを構造中にとシ込んでいてもよい。4. The silicon-containing deposited film formed by the method of the present invention can be crystalline or amorphous. The bonding of silicon in the film may be in any form from oligomers to I-limers. Further, hydrogen atoms, halodane atoms, etc. in the raw materials may be incorporated into the structure.
以下、主としてａ−８ｉ堆積膜の場合について、本発明
の実施態様を説明する。Hereinafter, embodiments of the present invention will be described mainly in the case of an a-8i deposited film.
前記一般式の鎖状ハロゲン化ケイ素化合物は、直鎖又は
分岐状の鎖状水素化ケイ素化合物（鎖状シラ／化合物）
ＳｉｎＨ２ｎ＋２のノ・ログン誘導体であって、製造が
容易であシかつ安定性の高い化合物である。一般式中、
Ｘはフッ素、塩素、臭素及びヨウ素から選ばれるハロゲ
ン原子を表わす。ｎの値を１〜６に限定したのは、ｎが
大きくなる程分解が容易となるが気化しにくくなシ合成
も困難である上、分解効率も悪くなるためである。The chain halogenated silicon compound of the above general formula is a linear or branched chain silicon hydride compound (chain sila/compound)
It is a nologon derivative of SinH2n+2, and is a compound that is easy to produce and has high stability. In the general formula,
X represents a halogen atom selected from fluorine, chlorine, bromine and iodine. The reason why the value of n is limited to 1 to 6 is because as n becomes larger, decomposition becomes easier, but it is also difficult to synthesize a compound that is difficult to vaporize, and the decomposition efficiency also deteriorates.
前記一般式の鎖状ハロダン化ケイ素化合物の好適例とし
は、以下の化合物を挙げることができる。Suitable examples of the chain halodanized silicon compound of the general formula include the following compounds.
（１） Ｓｉ、Ｆ４． （２） ５ｔ２Ｆ６． （３）
８１．Ｆ、 、 （４） ８１４Ｆ、ｏ。(1) Si, F4. (2) 5t2F6. (3)
81. F, , (4) 814F, o.
（５） ”５Ｆ１２ 、（６） ５ｉ６Ｆ、４．（７）
５ｉＣｔ４＋ （８） ５ｔ２ｃｚ６゜（９）８１．
Ｃ６０，αＯ５ｔａｒ４＃ （１１） ５ｔ２Ｂｒ６．
％／）２１５ｔ３Ｂｒ８゜α３）ＳｉＩ。。(5) "5F12, (6) 5i6F, 4. (7)
5iCt4+ (8) 5t2cz6゜(9)81.
C60, αO5tar4# (11) 5t2Br6.
%/)215t3Br8°α3)SiI. .
本発明においてシリコンを含有する堆積膜を形成する前
記室は、減圧下におかれるのが好ましいが、常圧下ない
し加圧下においても本発明方法を実施することができる
。In the present invention, the chamber in which the silicon-containing deposited film is formed is preferably placed under reduced pressure, but the method of the present invention can also be carried out under normal pressure or increased pressure.
本発明において使用される励起エネルギーは、光エネル
ギーに限定されるものであるが、前記一般式の鎖状ハロ
ダン化ケイ素化合物は、光エネルギー等比較的低いエネ
ルギーの付与によシ容易に励起・分解し、良質なシリコ
ン堆積膜を形成することができ、またこれに際し、基体
の温度も比較的低い温度とすることができるという特長
を有する。また、励起エネルギーは基体近傍に到達した
原料に一様にあるいは選択的制御的に付与されるが、光
エネルギーを使用すれば、適宜の光学系を用いて基体の
全体に照射して堆積膜を形成することができるし、ある
いは所望部分のみに選択的制御的に照射して部分的に堆
積膜を形成することができ、またレジスト等を使用して
所定の図形部分のみに照射し堆積膜を形成できるなどの
便利さを有しているため、有利に用いられる。The excitation energy used in the present invention is limited to light energy, but the chain silicon halide compound of the general formula above can be easily excited and decomposed by applying relatively low energy such as light energy. However, it has the advantage that a high-quality silicon deposited film can be formed, and the temperature of the substrate can also be kept relatively low. In addition, excitation energy is applied uniformly or selectively to the raw material that has reached the vicinity of the substrate, but if optical energy is used, the entire substrate is irradiated using an appropriate optical system to form a deposited film. Alternatively, it is possible to selectively control and irradiate only the desired area to form a partially deposited film, or use a resist etc. to irradiate only a predetermined graphic area to form a deposited film. It is advantageously used because it has the convenience of being able to be formed.
本発明においては、前記室内−に前記一般式の鎖状ハロ
ダン化ケイ素化合物及び水素の気体状雰囲気を形成する
ことによシ、励起・分解反応の過程で生成する水素ラジ
カルが反応の効率を高める。In the present invention, by forming a gaseous atmosphere of a chain silicon halide compound of the general formula and hydrogen in the chamber, hydrogen radicals generated in the process of excitation/decomposition reaction increase the efficiency of the reaction. .
その上、形成される堆積膜中に水素がと夛込まれ、８１
結合構造の欠陥を減らす役割を果たす。また、前記一般
式の鎖状ハロゲン化ケイ素化合物は、分解の過程でＳＩ
Ｘ 、 ５ｉＸ２ ＋ ＳｉＸ、 、 ５１２Ｘ２ ｒ
５１２Ｘ５゜５１２Ｘ４．Ｓ１□Ｘ５ ＊ ８１５Ｘ
５ ｒ ５１３Ｘ４ ｒ ５１５Ｘ５ 。Moreover, hydrogen is incorporated into the deposited film to be formed, and 81
It plays a role in reducing defects in the bonding structure. In addition, the chain halogenated silicon compound of the general formula above may undergo SI during the decomposition process.
X, 5iX2 + SiX, , 512X2 r
512X5゜512X4. S1□X5 *815X
5 r 513X4 r 515X5.
ｓｔ、ｘ６．５ｉ３ｘ、などのラジカルを発生させ、ま
た水素によって、Ｓｔ、Ｘ及びＨが結合したラジカルが
発生するため、これらのラジカルを含む反応プロセスｔ
−ｉて、最終的に、Ｓｉのダングリング？ンドをＨ又は
Ｘで十分にターミネートした局在準位密度の小さい良質
の膜が得られる。Since radicals such as st, x6.5i3x, etc. are generated, and radicals in which St,
-In the end, Si's dangling? A high-quality film with a low localized level density in which the ends are sufficiently terminated with H or X can be obtained.
また、前記一般式の鎖状ハロゲン化ケイ素化合物は、２
種以上を併用してもよいが、この場合、各化合物によっ
て期待される膜特性を平均化した程度の特性、ないしは
相乗的に改良された特性が得られる。Further, the chain halogenated silicon compound of the general formula is 2
Although more than one type of these compounds may be used in combination, in this case, properties that are equivalent to the average of the film properties expected by each compound, or properties that are synergistically improved can be obtained.
以下、図面を参照して説明する。This will be explained below with reference to the drawings.
図面は、本発明方法によって光導電膜、半導体膜又は絶
縁体膜等として用いられるａ−８ｉ堆積膜を形成するの
に使用する装置の１例を示した模式図である。The drawing is a schematic diagram showing an example of an apparatus used to form an a-8i deposited film used as a photoconductive film, a semiconductor film, an insulating film, etc. by the method of the present invention.
図中、１は堆積室であシ、内部の基体支持台２上に所望
の基体３が載置される。基体３は、導電性、半導電性あ
るいは電気絶縁性の何れの基体でもよく、例えば、電気
絶縁性の基体としては、ポリエステル、Ｉリエチレン、
ポリカーボネート、セルローズアセテート、Ｉリプロピ
レン、ポリ塩化ビニル、４す塩化ビニリデン、ポリスチ
レン、ポリアミド等の合成樹脂のフィルム又はシート、
ガラス、セラミック、紙等が通常使用される。また、基
体３には予め電極層、他のシリコン層等が積層されてい
てもよい。In the figure, 1 is a deposition chamber, and a desired substrate 3 is placed on a substrate support 2 inside. The base 3 may be a conductive, semiconductive, or electrically insulating base. For example, as an electrically insulating base, polyester, I-lyethylene,
Films or sheets of synthetic resins such as polycarbonate, cellulose acetate, I-lipropylene, polyvinyl chloride, tetravinylidene chloride, polystyrene, polyamide, etc.
Glass, ceramic, paper, etc. are commonly used. Moreover, an electrode layer, another silicon layer, etc. may be laminated on the base 3 in advance.
４は基体加熱用のヒーターであシ、導線５を介して給電
され、発熱する。基体温度は特に制限されないが、本発
明方法を実施するにあたりては、好ましくは５０〜１５
０℃、よシ好ましくは１００〜１５０℃であることが望
ましい。Numeral 4 is a heater for heating the substrate, which is supplied with electricity through a conductor 5 and generates heat. Although the substrate temperature is not particularly limited, in carrying out the method of the present invention, it is preferably 50 to 15
The temperature is preferably 0°C, more preferably 100 to 150°C.
６乃至９は、ガス供給源であシ、前記一般式で示される
鎖状ハロゲン化ケイ素化合物のうち液状のものを使用す
る場合には、適宜の気化装置を具備させる。気化装置に
は加熱沸騰を利用するタイプ、液体原料中にキャリアー
ガスを通過させるタイプ等があり、倒れでもよ−い。ま
た、水素ガスは分子状のままで用いても、予めラジカル
化して用いてもよい。ガス供給源の個数は４に限定され
ず、使用する前記一般式の鎖状ハロゲン化ケイ素化合物
の数、キャリヤーガス、希釈ガス、触媒ガス等を使用す
る場合において原料ガスである前記一般式の化合物及び
水素との予備混合の有無等に応じて適宜選択される。図
中、ガス供給源６乃至９の符号に、ａを付したのは分岐
管、ｂを付したのは流量計、Ｃを付したのは各流量計の
高圧側の圧力を計測する圧力計、ｄ又はｅを付したのは
各気体流量を調整するためのパルプである。Reference numerals 6 to 9 are gas supply sources, and if a liquid one of the chain halogenated silicon compounds represented by the above general formula is used, an appropriate vaporizer is provided. There are two types of vaporizers: one that utilizes heating and boiling, and another that allows carrier gas to pass through the liquid raw material. Furthermore, hydrogen gas may be used in its molecular form or may be radicalized beforehand. The number of gas supply sources is not limited to four, and the number of chain halogenated silicon compounds of the above general formula to be used, the compound of the above general formula that is the raw material gas when using a carrier gas, diluent gas, catalyst gas, etc. and the presence or absence of premixing with hydrogen. In the figure, to the gas supply sources 6 to 9, a is added to the branch pipes, b is the flowmeter, and C is the pressure meter that measures the pressure on the high pressure side of each flowmeter. , d or e indicates the pulp for adjusting the flow rate of each gas.
各ガス供給源から供給される原料ガス等は、ガス導入管
１０の途中で混合され、図示しない排気装置に付勢され
て、室ｌ内に導入される。１１は室１内に導入されるガ
スの圧力を計測するための圧力計である。また、１２は
ガス排気管であり、堆積室１内を減圧したシ、導入ガス
を強制排気するための図示しない排気装置と接続されて
いる。Raw material gases and the like supplied from each gas supply source are mixed in the middle of the gas introduction pipe 10, energized by an exhaust device (not shown), and introduced into the chamber 1. Reference numeral 11 denotes a pressure gauge for measuring the pressure of gas introduced into the chamber 1. Further, 12 is a gas exhaust pipe, which is connected to an exhaust device (not shown) for forcibly exhausting the introduced gas while reducing the pressure inside the deposition chamber 1.
１３はレギスレータ・パルプである。原料ガス等を導入
する前に、室１内を排気し、減圧状態とする場合、室内
の気圧は、５Ｘ１０ Ｔｏｒｒ以下、更にはＩ Ｘ １
０ Ｔｏｒｒ以下であることが好ましい。13 is the regulator pulp. When the inside of the chamber 1 is evacuated and brought into a reduced pressure state before introducing raw material gas etc., the atmospheric pressure in the room is 5×10 Torr or less, furthermore, I×1 Torr.
It is preferable that it is 0 Torr or less.
また、原料ガス等を導入した状態において、室ｌ内の圧
力は、好ましくは１×１０〜１００ Ｔｏｒｒ。Moreover, in the state where the raw material gas etc. are introduced, the pressure inside the chamber 1 is preferably 1×10 to 100 Torr.
よシ好ましくは１×１０〜Ｉ Ｔｏｒｒの範囲に維持さ
れることが望ましい。It is preferable to maintain it preferably in the range of 1×10 to I Torr.
本発明で使用する励起エネルギー供給源の１例としては
、１４は光エネルギー発生装置であって、例えば水銀ラ
ング、キセノンランプ、炭酸がスレーサ、アルゴンイオ
ンレーザ、エキシマレーザ−等が用いられる。なお、本
発明で用いる光エネルギーは紫外線エネルギーに限定さ
れず、原料ガスを励起・分解せしめ、分解生成物を堆積
させることができるものであれば、波長域を問うもので
杜ない。また、光エネルギーが原料ガス、又は基板に吸
収されて熱エネルギーに変換し、その熱エネルギーによ
って原料ガスの励起・分解がもたらされて堆積膜が形成
される場合を排除するものでもない。光エネルギー発生
装置１４から適宜の光学系を用いて基体全体あるいは基
体の所望部分に向けられた光１５は、矢印１６の向きに
流れている原料ガス等に照射され、励起・分解を起こし
て基体３上の全体あるいは所望部分にａ−８１の堆積膜
を形成する。An example of an excitation energy supply source used in the present invention is a light energy generator 14, such as a mercury rung, a xenon lamp, a carbon dioxide laser, an argon ion laser, an excimer laser, or the like. Note that the light energy used in the present invention is not limited to ultraviolet energy, and any wavelength range may be used as long as it can excite and decompose the source gas and deposit decomposition products. Further, the present invention does not exclude the case where light energy is absorbed by the source gas or the substrate and converted into thermal energy, and the thermal energy causes excitation and decomposition of the source gas to form a deposited film. Light 15 is directed from the optical energy generator 14 to the entire substrate or a desired portion of the substrate using an appropriate optical system, and is irradiated to the raw material gas flowing in the direction of the arrow 16, causing excitation and decomposition, and causing the substrate to be heated. A deposited film of a-81 is formed on the entire surface of 3 or on a desired portion.
本発明方法によれば、所望によシ、薄膜から厚膜までの
任意の膜厚の堆積膜が得られ、また膜面積も所望によシ
任意に選択することができる。膜厚の制御は、原料ガス
の圧力、流量、濃度等の制御、励起エネル、ギー量の制
御等通常の方法で行なうことができる。例えば一般の光
導電膜、半導体膜又は絶縁体膜等を構成するａ−８１膜
を作製する場合、膜厚は好ましくは５００〜５ Ｘ １
０’ Ｘ、よシ好ましくは１ｏｏｏ〜１００００＾の範
囲で選択されることが望ましい。According to the method of the present invention, a deposited film having any thickness from a thin film to a thick film can be obtained as desired, and the film area can also be arbitrarily selected as desired. The film thickness can be controlled by conventional methods such as controlling the pressure, flow rate, concentration, etc. of the raw material gas, controlling the excitation energy, and the amount of energy. For example, when producing an a-81 film constituting a general photoconductive film, semiconductor film, insulator film, etc., the film thickness is preferably 500 to 5 × 1
0'
以下に、本発明の具体的実施例を示す。Specific examples of the present invention are shown below.
実施例１
前記一般式の鎖状ハロダン化ケイ素化合物として、前記
例示化合物（１） 、 （２） 、 （３）又は（５）
を用い、図面の装置によＦ） ａ−８ｔ堆積膜を形成し
た。Example 1 As the linear silicon halide compound of the general formula, the exemplary compound (1), (2), (3) or (5)
F) A-8t deposited film was formed using the apparatus shown in the drawing.
先づ、導電性フィルム基板（コーニング社製、≠７０５
９ ）を支持台ｚ上に載置し、排気装置を用いて堆積室
ｌ内を排気し、１０−６Ｔｏｒｒに減圧した。First, a conductive film substrate (manufactured by Corning, ≠705
9) was placed on a support z, and the inside of the deposition chamber 1 was evacuated using an exhaust device to reduce the pressure to 10 −6 Torr.
第１表に示した基板温度で、気体状態とされている前記
ハロダン化ケイ素化合物をｔ ｔ Ｏ８ＣＣＭ。At the substrate temperature shown in Table 1, the silicon halide compound, which is in a gaseous state, is t t O8CCM.
水素ガスを４０ ＥＣＣＭの流量で堆積室内に導入し、
室内の気圧を０．１ Ｔｏｒｒに保ちつつ低圧水銀灯を
光強度１００艷〆ｉで基板に垂直に照射して、膜厚４０
００Ｘの■型ａ−８ｌ膜を形成した。成膜速度は、３６
； Ｌ／ｓｅｅでアッタ。Hydrogen gas was introduced into the deposition chamber at a flow rate of 40 ECCM,
While maintaining the atmospheric pressure in the room at 0.1 Torr, a low-pressure mercury lamp was irradiated perpendicularly to the substrate at a light intensity of 100 mm to obtain a film thickness of 40 mm.
A 00X type a-8l film was formed. The film formation rate is 36
; Atta with L/see.
比較のため、Ｓｉ２Ｈ６を用いて同様にしてａ−８１膜
を形成した。成膜速度は６Ｖｓｓｅであった・次いで、
得られた各ａ−８１膜試料を蒸着う槽に入れ、１０−’
Ｔｏｒｒまで引いた後真空度１０−５Ｔｏｒｒ、成膜
速度２０１／ｓｅａでＡｔを１５００！蒸着し、クシ型
のＡｔギヤ、ゾ電極（長さ一２５０μ、巾５ ｍ ）を
形成した後、印加電圧１０Ｖで光電流（ＡＭＩ、１００
シ４ ）と暗電流を測定し、光導電率σｐ、σｐと暗導
電率σｄとの比σｐ／σｄをめて、ａ−８１膜を評価し
た。結果を第１表に示した。For comparison, an a-81 film was similarly formed using Si2H6. The film formation rate was 6Vsse. Then,
Each obtained A-81 film sample was placed in a vapor deposition tank and heated for 10-'
After pulling down to Torr, the vacuum level was 10-5 Torr, the deposition rate was 201/sea, and the At was 1500! After forming a comb-shaped At gear and a zoelectrode (length - 250μ, width 5m), a photocurrent (AMI, 100
The a-81 film was evaluated by measuring the photoconductivity σp and the ratio σp/σd of the photoconductivity σp and the dark conductivity σd. The results are shown in Table 1.
第 １ 表
第１表から、本発明によるａ−８ｌ膜は従来品に比べ、
低い基板温度でもσｐ及びσｐ／ｃｒｄが向上している
。Table 1 From Table 1, it can be seen that the a-8L film according to the present invention has a
σp and σp/crd are improved even at low substrate temperatures.
° 実施例２
基板をＩリイミド基板、光源及び光強度を高圧水銀灯２
００ ｍＷ／ｍ とし、前記一般式の鎖状ハ算ｒンイに
ケイ豊イｌ／心給ル１−イー 曲ＩｒＩ朝１云イに春物
Ｃ６）。° Example 2 The substrate is an Ilimide substrate, the light source and light intensity are high pressure mercury lamps 2
00 mW/m, and the chain of the above general formula is calculated as follows:
（７） 、 （９）を用いた以外は、実施例１と同様に
ａ−８ｌ膜を形成し、σｐ及びσｐ／σｄをめた。結果
を第２表に示した。An a-8l film was formed in the same manner as in Example 1, except that (7) and (9) were used, and σp and σp/σd were determined. The results are shown in Table 2.
第 ２ 表
〔発明の効果〕 □
本発明によれば、低い基体温度でしかも高い成膜速度に
よって高品質のシリコン堆積膜を形成することができる
。その上、形成する膜が広面積、厚膜の場合においても
、均一な電気的・光学的特性が得られ、品質の安定性も
確保できるという従来にない格別の効果が奏される。ま
た、ほかにも、基体の高温加熱が不要であるためエネル
ギーの節約になる、耐熱性の乏しい基体上にも成膜でき
る、低温処理によりて工程の短縮化を図れる、原料化合
物が容易に合成でき、安価でしかも安定性に優れ取扱上
の危険も少ない、といった効果が発揮される。Table 2 [Effects of the Invention] □ According to the present invention, a high quality silicon deposited film can be formed at a low substrate temperature and at a high film formation rate. Moreover, even when the film to be formed has a wide area and is thick, uniform electrical and optical characteristics can be obtained and quality stability can be ensured, which is an unprecedented and exceptional effect. In addition, it saves energy because it does not require high-temperature heating of the substrate, it can form a film even on substrates with poor heat resistance, it shortens the process by low-temperature processing, and it facilitates the synthesis of raw material compounds. It is inexpensive, has excellent stability, and has few handling risks.
図面は、本発明で使用する光エネルギー照射型堆積膜形
成装の１例を示した概略構成図である。
ｌ・・・堆積室、２・・・基体支持台、３・・・基体、
４・・・ヒーター、６〜９・・・ガス供給源、１０・・
・ガス導入管、１２・・・ガス排気管、１４・・・光エ
ネルギー発生装置。The drawing is a schematic configuration diagram showing an example of a light energy irradiation type deposited film forming apparatus used in the present invention. l...deposition chamber, 2...substrate support, 3...substrate,
4...Heater, 6-9...Gas supply source, 10...
- Gas introduction pipe, 12... Gas exhaust pipe, 14... Light energy generator.
Claims (1)
式中、Ｘはノーログン原子、ｎは１〜６の整数である。 ）で表わされる鎖状ノーロダン化ケイ素化合物及び水素
の気体状雰囲気を形成し、光エネルギーを利用すること
によって前記化合物及び水素を励起して分解し、前記基
体上にシリコンを含有する堆積膜を形成することを特徴
とする堆積膜形成方法０[Claims] In the chamber containing the substrate, a structure having the general formula: 5inX2n+2(
In the formula, X is a norogon atom, and n is an integer of 1 to 6. ) Forming a gaseous atmosphere of a chain norodanide silicon compound and hydrogen, and using light energy to excite and decompose the compound and hydrogen, forming a deposited film containing silicon on the substrate. Deposited film forming method 0 characterized by
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59074923A JPH0750682B2 (en) | 1984-04-16 | 1984-04-16 | Deposited film formation method |
| US06/722,468 US4683147A (en) | 1984-04-16 | 1985-04-12 | Method of forming deposition film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59074923A JPH0750682B2 (en) | 1984-04-16 | 1984-04-16 | Deposited film formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60218828A true JPS60218828A (en) | 1985-11-01 |
| JPH0750682B2 JPH0750682B2 (en) | 1995-05-31 |
Family
ID=13561372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59074923A Expired - Lifetime JPH0750682B2 (en) | 1984-04-16 | 1984-04-16 | Deposited film formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0750682B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100436319B1 (en) * | 1999-03-30 | 2004-06-18 | 제이에스알 가부시끼가이샤 | Method for forming silicon film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5727015A (en) * | 1980-07-25 | 1982-02-13 | Agency Of Ind Science & Technol | Manufacture of silicon thin film |
| JPS57117233A (en) * | 1981-01-14 | 1982-07-21 | Hitachi Ltd | Growing method for semiconductor in gaseous phase |
| JPS58158914A (en) * | 1982-03-16 | 1983-09-21 | Semiconductor Res Found | Semiconductor manufacturing device |
| JPS58163951A (en) * | 1982-03-25 | 1983-09-28 | Canon Inc | Photoconductive material |
-
1984
- 1984-04-16 JP JP59074923A patent/JPH0750682B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5727015A (en) * | 1980-07-25 | 1982-02-13 | Agency Of Ind Science & Technol | Manufacture of silicon thin film |
| JPS57117233A (en) * | 1981-01-14 | 1982-07-21 | Hitachi Ltd | Growing method for semiconductor in gaseous phase |
| JPS58158914A (en) * | 1982-03-16 | 1983-09-21 | Semiconductor Res Found | Semiconductor manufacturing device |
| JPS58163951A (en) * | 1982-03-25 | 1983-09-28 | Canon Inc | Photoconductive material |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100436319B1 (en) * | 1999-03-30 | 2004-06-18 | 제이에스알 가부시끼가이샤 | Method for forming silicon film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0750682B2 (en) | 1995-05-31 |
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