JPS60216537A - Vapor growth method of compound semiconductor single crystal epitaxial film - Google Patents
Vapor growth method of compound semiconductor single crystal epitaxial filmInfo
- Publication number
- JPS60216537A JPS60216537A JP59072400A JP7240084A JPS60216537A JP S60216537 A JPS60216537 A JP S60216537A JP 59072400 A JP59072400 A JP 59072400A JP 7240084 A JP7240084 A JP 7240084A JP S60216537 A JPS60216537 A JP S60216537A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- flow rates
- epitaxial
- epitaxial film
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 10
- 150000001875 compounds Chemical class 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 230000006798 recombination Effects 0.000 claims description 3
- 238000005215 recombination Methods 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229910005540 GaP Inorganic materials 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 abstract description 4
- 229910000070 arsenic hydride Inorganic materials 0.000 abstract description 3
- 239000010453 quartz Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000012495 reaction gas Substances 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 101100232317 Agaricus bisporus abh3 gene Proteins 0.000 description 1
- 101150069791 Alkbh3 gene Proteins 0.000 description 1
- 102100039086 Alpha-ketoglutarate-dependent dioxygenase alkB homolog 3 Human genes 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 101100110026 Danio rerio ascl1b gene Proteins 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 235000015115 caffè latte Nutrition 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
１皇よ旦と肚立証
本発明は発光ダイオード用間接遷移型三元系化合物半導
体燐化砒化ガリウム（ＧａＡａ□−ｘＰＸ、０．５≦ｘ
〈１）エピタキシャル膜の気相成長法に関する。[Detailed Description of the Invention] 1. The present invention is an indirect transition type ternary compound semiconductor gallium arsenide phosphide (GaAa□-xPX, 0.5≦x) for light-emitting diodes.
<1) Regarding the vapor phase growth method of epitaxial films.
従来の技術
一般に、黄色、橙色及び赤色発光ダイオード用１−Ｖ族
化合物半導体の気相成長エピタキシャルウェー八として
、燐化ガリウム（ＧａＰ）等の単結晶基板に燐化砒化ガ
リウム（ＧａＡｓ１−、Ｐｃｍ ０．５≦Ｉく１）エピ
タキシャル膜を設けたものが知られている。Conventional technology Generally, gallium arsenide phosphide (GaAs1-, Pcm 0 .5≦I (1) A device provided with an epitaxial film is known.
従来、黄色発光ダイオード（中心発光波長５ｓａｏＸ）
檄色発光ダイオード（中心発光波長６３００Ａ）等のエ
ピタキシャルウェー八は、ＧａＰ単結晶基板上に、Ｇａ
Ｐのエピタキシャル層、格子定数の相異による格子不整
合を緩和するために、混晶率Ｘを徐々に変化させたＧａ
Ａｓ 、−エＰＣ（０，５≦ｚ＜１）混晶率変化７１１
（以下Ｘ変化層という）を高率な実際に示すと黄色発光
ダイオードではＧ５ＬＡ’ ａｌ ＠Ｐａａｌ’橙色発
光ダイオードではＧａＡｓａ、。Conventional yellow light emitting diode (center emission wavelength 5saoX)
Epitaxial wafers such as orange light-emitting diodes (center emission wavelength 6300A) are made of GaP single crystal substrates.
Epitaxial layer of P, Ga with mixed crystal ratio X gradually changed to alleviate lattice mismatch due to difference in lattice constant.
As, -EPC (0,5≦z<1) Mixed crystal ratio change 711
(hereinafter referred to as the X change layer) is actually shown at a high rate in yellow light emitting diodes: G5LA' al @Paal' in orange light emitting diodes: GaAsa.
Ｐ である。It is P.
α−５
発光層となるＸ−足側には、窒素を添加し、この窒素ア
イソエレクトロニックトラップにとらえられたエキシト
ンの再結合発光により高い発光強度が得られる。Nitrogen is added to the X-leg side which becomes the α-5 luminescent layer, and high luminescence intensity is obtained by recombination luminescence of excitons captured in the nitrogen isoelectronic trap.
従来、前記Ｘ一定足側成長させる際に、エピタキシャル
成長用ガス中に含まれるガリウムと砒素及び燐との原子
数比（Ｇａ） ／ （Ａａ＋Ｐ） （以下〔Ｉ〕／（Ｖ
）比と略記する）を０．５〜２．０に選択して成長させ
てきた。Conventionally, when growing on the constant side of
) has been grown by selecting a ratio of 0.5 to 2.0.
（１）／（Ｖ）比を増加し、Ｇａ ｊＪラッテ雰囲気中
でＸ−足側の成長を行うと、この層内にとりこまれる窒
素の量は（１） ／（Ｖ）比の増大に伴なって増加し、
発光強度が改善される。また、（１）／（Ｖ）比の増大
に伴なって、非発光再結合中心となるＸ−足側内のガリ
ウム空格子が低濃度になり、ガリウム空格子の減少に伴
なって少数キャリアの寿命が長くなり、これらのことか
らも発光強度の向上が期待される。When the (1)/(V) ratio is increased and the X-leg side is grown in a Ga jJ latte atmosphere, the amount of nitrogen incorporated into this layer increases as the (1)/(V) ratio increases. and increase,
Emission intensity is improved. In addition, as the (1)/(V) ratio increases, the concentration of gallium vacancies on the X-leg side, which is the center of non-radiative recombination, decreases, and as the gallium vacancies decrease, minority carriers The lifetime of the LED will be extended, and from these factors, an improvement in luminescence intensity is expected.
しかし、（鳳）／（Ｖ）比が更に大きくなり、窒素原子
が過剰に添加されると、結晶性が悪くなり逆に発光強度
が低下する原因となる。However, if the (Otori)/(V) ratio becomes even larger and nitrogen atoms are added in excess, crystallinity deteriorates and, conversely, the emission intensity decreases.
これらのことに着目し研究を重ねた結果、〔ｌ／〔Ｖ〕
比を２．０より大にした時、従来より約２０％の発光強
度の向上が達成され、３．０以上になると発光強度の低
下が見られた。As a result of focusing on these things and conducting repeated research, we found that [l/[V]
When the ratio was made larger than 2.0, an approximately 20% improvement in emission intensity was achieved compared to the conventional ratio, and when the ratio was made greater than 3.0, a decrease in emission intensity was observed.
また、（１） ／ （Ｖ）比が大きくなり、エピタキシ
ャル成長ガス中にＧａ原子成分が過剰に存在すると、エ
ピタキシャル膜表面に「ピラミッド」と呼ばれる突起が
発生する。特に（１）／（Ｖ）比を２，５以上にすると
顕著に現われることが判った。Furthermore, when the (1)/(V) ratio becomes large and an excessive Ga atomic component exists in the epitaxial growth gas, protrusions called "pyramids" occur on the surface of the epitaxial film. It has been found that this effect is particularly noticeable when the (1)/(V) ratio is set to 2.5 or more.
この「ピラミッド」はエビタキＶヤルウエーへから発光
ダイオードを製造すふ工程において妨げになると共に、
成長させた一枚のウェーハから製造できる発光ダイオー
ドの数を著しく減少させる。This "pyramid" becomes a hindrance in the process of manufacturing light emitting diodes from Evitaki V Yaruwei, and
This significantly reduces the number of light emitting diodes that can be manufactured from a single grown wafer.
問題点を解決するための手段
本発明の目的は（）ａＰ単結晶基板上にＧａＡｓ 、−
エＰ工（０，５≦ｘく１）エピタキシャル陵を成長させ
る際、その表面に突起を発生させず発光強度を向上させ
ることにある。Means for Solving the Problems The purpose of the present invention is to () deposit GaAs on an aP single crystal substrate, -
The object of the present invention is to improve the light emission intensity without generating protrusions on the surface when growing an epitaxial layer (0,5≦x×1).
この目的は、エピタキシャル成長ガス中の〔勇〕／〔Ｖ
〕比を２ ＜ （１）／（Ｖ） ＜ ２． ｓの範囲に
することにより達成できる。The purpose of this is to
] The ratio is 2 < (1)/(V) < 2. This can be achieved by setting the range to s.
次ｄ二実施例および比較例に基づいて本発明を説明する
が、ここにあげた実施例によって本発明が限定されない
ことはもちろんである。The present invention will be explained based on the following two examples and comparative examples, but it goes without saying that the present invention is not limited to the examples listed here.
実施例１
下記の方法により第１図に示す構造の黄色発光ダイオー
ド用ＧａＡｓ ＊−ｘＰｘエビタキシヤルウェーッ寺製
造した。Example 1 A GaAs*-xPx yellow light emitting diode having the structure shown in FIG. 1 was manufactured by the following method.
ｆｓｔＡｔ（Ｔｅ）を２．ａｘ１０ＪｆＬ子／ｄ添加し
た結晶方位＜ｉｏｏ＞のＧａＰ単結晶棒を（１（３０）
より＜１１）０＞の方向に５°偏位なもつ様椹；厚さ３
５０μにスライスした後、通常の化学エツチングと機械
化学研摩をほどこした厚さ約３００μのＧａＰ鏡面単結
晶ウェーハをエビタキＶヤル基板１として用いた。また
反応ガスとして水素（Ｈｇ ） 。fstAt(Te) to 2. A GaP single crystal rod with crystal orientation <ioo> to which ax10JfL/d is added is (1(30)
5° deviation in the <11)0>direction; thickness 3
A GaP mirror-finished single crystal wafer having a thickness of about 300 μm, which was sliced into 50 μm slices and subjected to ordinary chemical etching and mechanochemical polishing, was used as the epitaxial V-shaped substrate 1. Hydrogen (Hg) is also used as a reaction gas.
Ｈ２希釈の濃度５０ ｐｐｍの硫化水素（Ｈ２８ｎ型不
純物）、Ｈ２希釈の１％砒化水素（ＡＢＭｓ）Ｊｘ希釈
の１０％の燐化水素（ＰＨｍ）、高純度塩化水素ガス（
ＨＯＩ）及び高純度アンモニアガス（ＮＨＢ）を用いた
。Hydrogen sulfide (H28 n-type impurity) at a concentration of 50 ppm in H2 dilution, 1% hydrogen arsenide (ABMs) in H2 dilution, 10% hydrogen phosphide (PHm) in Jx dilution, high purity hydrogen chloride gas (
HOI) and high purity ammonia gas (NHB) were used.
以後上記反応ガスを各々Ｈａ 、 Ｈ２Ｂ ／ Ｈ２，
ＡａＨ１／Ｈ，、ＰＨ，／Ｈ，、）１０１及び皿、と略
記する。Thereafter, the above reaction gases were converted into Ha, H2B/H2,
AaH1/H, PH, /H, ) 101 and plate.
上記ＧａＰ単結晶基板１を洗浄した後、これと高純度Ｇ
ａ入り石英容器とを縦型石英製反応機内の所定の場所に
セットした。After cleaning the GaP single crystal substrate 1, this and high-purity G
The quartz container containing a was set at a predetermined location in a vertical quartz reactor.
反応機内に高純度窒業ガス（Ｎ２）、ついでキャリアガ
スとして高純度水素ガス（Ｎ２）を導入して反応機内を
充分に置換した後、昇温を開始した。After introducing high-purity nitrogenous gas (N2) into the reactor and then high-purity hydrogen gas (N2) as a carrier gas to sufficiently replace the inside of the reactor, temperature elevation was started.
上記ＧａＰ基板セット領域の温度か８８０℃に達したこ
とを確認した後、黄色発光ダイオード用ＧａＡｓ０．Ｉ
Ｓ ＰＯ，ｍ ｓエピタキシャル膜の気相成長を開始
した。After confirming that the temperature of the GaP substrate setting area reached 880°C, the GaAs0. I
Vapor phase growth of the SPO,ms epitaxial film was started.
中のＧａと反応させてＧａｏｌを形成させ、同時に導入
した流量が毎分２５０ｃｃのＰＨｓ／ＨａとによりＧａ
Ｐ単結晶基板ｌ上に厚さ５μのＧａｐエピタキシャルＪ
ｆｉｉ２を成長させた。Gaol is formed by reacting with the Ga in the inside, and the Gaol is reacted with the PHs/Ha introduced at the same time at a flow rate of 250 cc/min.
Gap epitaxial J with a thickness of 5μ on a P single crystal substrate l
I grew fii2.
次に上記層２上にＧ■８□−ＸＰＸ層をエピタキシャル
成長させた。最初に前記Ｈ，８／Ｈ１ｌ、 ＨにＩＩ及
びＰＨ，／Ｈ１の流量を各々毎分１１ｃｃ、６８ｅｅ及
び２５０ｅＣに保ちながら、ＡＳＨ８／ Ｎ２の流量を
毎分Ｑｃｃより２６０Ｃｅまで徐々に増加させて、混晶
率Ｉが１から約０．８５まで変化する厚さ３５μのＸ変
化層３を形成した。ＡｓＨＢ ／Ｈ２の流量が毎分Ｏａ
から１７０ｅｅに変化する間、基板セット領域の温度を
８８０℃から８２０℃に徐々Ｃ二、かつ断続的に低下さ
せた。以後、この基板セット領域の温度はエピタキシャ
ル膜成長終了まで８２０℃Ｃ二固定した。Next, a G■8□-XPX layer was epitaxially grown on the layer 2 described above. First, while keeping the flow rates of H, 8/H1l, H to II and PH, /H1 at 11cc, 68ee and 250eC per minute, respectively, the flow rate of ASH8/N2 was gradually increased from Qcc to 260Ce per minute, An X-variable layer 3 having a thickness of 35 μm and having a mixed crystal ratio I varying from 1 to about 0.85 was formed. The flow rate of AsHB/H2 is Oa per minute
During the change from 880° C. to 170° C., the temperature of the substrate setting area was gradually lowered by C2 and intermittently from 880° C. to 820° C. Thereafter, the temperature of this substrate setting area was fixed at 820° C. until the epitaxial film growth was completed.
ついで、上記Ｈ２Ｂ／Ｈ２，ＨＯＩ、ＰＨ，／Ｈ，およ
びＡｓＨ３／Ｈ，！！ の流量を各々毎分１０ＱＩＩｎ
、５９ｃｃ。Then, the above H2B/H2, HOI, PH, /H, and AsH3/H,! ! The flow rate of each is 10QIIn per minute.
, 59cc.
２５００Ｃおよび２６０ｅｅに固定し、厚さ１０μのＸ
−窓層４すなわち、Ｇａ”０．１８ ＰＯＪ６の層を成
長させた。Fixed to 2500C and 260ee, 10μ thick
- Window layer 4, a layer of Ga"0.18 POJ6 was grown.
最後に、Ｈ，Ｂ／Ｈ２，ＨＯＩ、 ＰＨ，／Ｈ，、Ａｓ
八へＨ２の流量を各々毎分ｌ ＯＣＣ，６８ｃｃ、 ２
５ Ｑｃｃおよび２６０ｅＣに保ちなからＨＥ、の流量
を毎分Ｏｃｃから４００ｅｅに増加し、つい１′ＨｔＢ
／Ｈ，、ＨＯＩ 。Finally, H,B/H2,HOI, PH,/H,,As
The flow rate of H2 to 8 l OCC, 68 cc, 2 per minute, respectively.
5 While maintaining Qcc and 260eC, increase the flow rate of HE from Occ to 400ee per minute, and just 1'HtB.
/H,,HOI.
ｐａ３／Ｈ，Ｉ、 ＡＢＨ３／ Ｈｚ およびＮＨ，の
流量を各々毎分Ｉ Ｑｃｃ、 ６３ｃｃ、 ２５０ｃｃ
、 ２ （ｉ ０ｃｃおよび４００ＣＣに固定して、所
望の濃度に窒素原子が添付された厚さ２５μのＧａＡｓ
１−ＸＰＸｘ一定Ｍ５（以下Ｎ＃＆加Ｘ一定層足側う）
を形成し、黄色発光ダイオード用間接遷移型ＧａＡｓ□
−ｘＰＸエピタキシャル膜の成長を終了させ、エピタキ
シャルクエー八を得た。The flow rates of pa3/H, I, ABH3/ Hz and NH are I Qcc, 63cc, and 250cc per minute, respectively.
, 2 (i fixed at 0cc and 400cc, 25μ thick GaAs with nitrogen atoms attached to the desired concentration)
1-XPXx constant M5 (hereinafter N# & +X constant layer foot side)
Indirect transition type GaAs□ for yellow light emitting diode
The growth of the -xPX epitaxial film was completed to obtain an epitaxial Q8.
ド用ＧａＡｓ Ｈ−ｘ Ｐｘエピタキシャルウェー八へ
製造した。A GaAs H-x Px epitaxial wafer was fabricated for use in the wafer.
つぎに、前記実施例１．２および比較例１．２゜３．４
に示す方法によって得た黄色発光ダイオード用エビタキ
シャルウェーッ翫にＺｎ拡散を行なってＰ−Ｎ接合を形
成し黄色発光ダイオードを製作した。この黄色発光ダイ
オード（樹脂コートなし）の発光輝度（ミリカンデラ、
ｍａｄ）およびエピタキシャル膜表面のピラミッドの数
は第１表に示す通りであった。Next, Example 1.2 and Comparative Example 1.2゜3.4
The yellow light emitting diode was manufactured by diffusing Zn into the yellow light emitting diode epitaxial wave rod obtained by the method described above to form a PN junction. The luminance of this yellow light emitting diode (without resin coating) (millicandela,
The number of pyramids on the surface of the epitaxial film was as shown in Table 1.
発明の効果
上記第１表に示した如く、本発明に基づく方法は、従来
の方法に比べて、エピタキシャル膜表面のピラミッドが
極端に少なく、かつ発光強度は約２０％の輝度向上が達
成され、本発明の方法による効果が確認された。Effects of the Invention As shown in Table 1 above, the method based on the present invention has an extremely small number of pyramids on the surface of the epitaxial film, and an approximately 20% increase in luminance intensity compared to the conventional method. The effects of the method of the present invention were confirmed.
第１図は実施例に示す黄色発光ダイオード用ＧａＡＳ０
．１Ｓ Ｐｏ、１５エピタキシヤルウエーへの断面図を
示すものである。
１・・・ＧａＰ単結晶基板
２・・・ＧａＰエピタキシャル層
３・・・Ｉ変化７ｍ
４・・・Ｘ−完膚
５・・・Ｎ添加Ｘ一定層Figure 1 shows GaAS0 for yellow light emitting diode shown in the example.
．． 1S Po, 15 shows a cross-sectional view into the epitaxial way. 1...GaP single crystal substrate 2...GaP epitaxial layer 3...I change 7m 4...X-complete 5...N-added X constant layer
Claims (1)
ピタキシャル層、三元系化合物半導体ＧａＡｓ□−エＰ
の混晶率変化層（ただし０．５≦ｘく１）、Ｃｈｌｓ
Ａａ□−エＰ工の混晶率−足側（ただし０．５≦Ｉく１
）及びキャリアの発光再結合領域に窒素の添加されたＧ
ａＡａ、−エル混晶率一定Ｊｉｉ（ただし０．５≦ｘく
１）よりなるエピタキシャル膜を気相成長させる方法に
おいて、上記エピタキシャル膜成長用ガス中に含まれる
ガリウムと燐及び砒素との原子数比（ｅａ）／（Ａｓ＋
Ｐ）が２＜（Ｇａ）／（Ａａ＋Ｐ）＜２．５であること
を特徴とする化合物半導体単結晶エピタキシャル膜の気
相成長法。1. GaP epitaxial layer, ternary compound semiconductor GaAs□-EP on gallium phosphide (Gap) single crystal substrate
The mixed crystal ratio changing layer (however, 0.5≦x1), Chls
Aa□-EP mixed crystal ratio-foot side (however, 0.5≦Iku1
) and G with nitrogen added to the radiative recombination region of carriers.
aAa, - In a method for vapor phase growing an epitaxial film having a constant mixed crystal ratio Jii (0.5≦x1), the number of atoms of gallium, phosphorus, and arsenic contained in the epitaxial film growth gas; Ratio (ea)/(As+
A method for vapor phase growth of a compound semiconductor single crystal epitaxial film, characterized in that P) satisfies 2<(Ga)/(Aa+P)<2.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59072400A JPS60216537A (en) | 1984-04-11 | 1984-04-11 | Vapor growth method of compound semiconductor single crystal epitaxial film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59072400A JPS60216537A (en) | 1984-04-11 | 1984-04-11 | Vapor growth method of compound semiconductor single crystal epitaxial film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60216537A true JPS60216537A (en) | 1985-10-30 |
Family
ID=13488183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59072400A Pending JPS60216537A (en) | 1984-04-11 | 1984-04-11 | Vapor growth method of compound semiconductor single crystal epitaxial film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60216537A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0782202A3 (en) * | 1995-12-27 | 1998-04-22 | Shin-Etsu Handotai Co., Ltd | Compound semiconductor epitaxial wafer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5454568A (en) * | 1977-10-08 | 1979-04-28 | Mitsubishi Monsanto Chem | Method of growing gas phase epitaxial of compound semiconductor |
-
1984
- 1984-04-11 JP JP59072400A patent/JPS60216537A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5454568A (en) * | 1977-10-08 | 1979-04-28 | Mitsubishi Monsanto Chem | Method of growing gas phase epitaxial of compound semiconductor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0782202A3 (en) * | 1995-12-27 | 1998-04-22 | Shin-Etsu Handotai Co., Ltd | Compound semiconductor epitaxial wafer |
| US5912476A (en) * | 1995-12-27 | 1999-06-15 | Shin-Etsu Handotai Co., Ltd. | Compound semiconductor epitaxial wafer |
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