JPS60216494A - Method of producing thin film el panel - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for manufacturing a thin IlαEL display panel that emits light by applying an alternating current or direct current electric field to a thin barrier containing a luminescent center.

Thin-film EL panels are completely flat displays compared to cathode ray tubes, so there is less distortion per screen, and the volume is smaller.Also, compared to liquid crystal displays, thin-film EL panels are self-luminous, making them brighter and easier to see. The present invention is expected to be applied to display devices, especially wall-mounted TVs.

[Prior art]

Conventionally, thin film EL panels have mainly had a double insulation structure in which an active layer 5 is sandwiched between insulating films 3 and 4 on both sides, as shown in FIG. Ld Sj, N, , Y2O,, Ta,, in the insulating layer
Since high melting point compounds such as Removed M I S (Me'trtl Xn8jJ
, la'tOr Set>+, 1-conrhbcto
r) structure, it is possible to drive at several tens of volts, and studies are underway, but it has not yet been put to practical use due to reliability. Conventionally, the manufacturing method for such elements is M
Taking a mold as an example, as shown in FIG. 3, (2) A TO transparent conductive film 2f is formed and patterned on a glass substrate 1 by sputtering.

(II) Using the sintered body of Ztl, 8: Ma+ as a source, an active layer 5 of about 300 OA is formed using electron beam K, RF, and Nupatsuta, and is annealed at 450° C. for 1 hour.

An insulating film 4 of OiD Y2O3Ta205+SZ02 or the like is formed to a thickness of about 300 nA by sputtering.

(ψ　At lightning, the pole 5 is formed by vapor deposition and patterned.

It is essentially difficult to make EL devices manufactured using this method with good insulation properties and are thin and free of pinholes, so in order to use them in large-area devices such as EL display panels, it is necessary to increase the thickness of the film. The reality is that the external voltage has to be high in order to ensure insulation and apply a constant electric field strength to the active layer.

In addition, Ztl, Zn5e formed by electron beam evaporation etc.
The active layer has a high vapor pressure of S+13g, and the growth temperature is as low as A50°C in order to maintain the nutrichiometric composition, making it impossible to obtain a good quality film.

[Purpose and outline]

The object of the present invention is to provide an MIS type ELf that has an insulating layer that is thin but homogeneous and that does not easily cause dielectric breakdown, and an active layer that has good purity, crystallinity, and light emission characteristics, and that can be driven at low voltage and have a long life.
It is in the manufacturing method of the i-display panel.

The features of the present invention are (1) in the production of thin film EL panels;
A process of forming a thin metal film of Ta, At, Ti, etc. on a glass substrate and then anodizing it in an electrolyte solution to form a thin insulating film with high breakdown voltage.

(11) On the anodic oxide film, z7+, (CH3)2
and Zn(021(i)2 organometallic compound and H2S,
ZnF3 was thermally decomposed in the entire gas phase of HoSe hydride.
, MO-CVD (Metat
orqanic chern, 1cal vcbpo
We are currently in the process of forming a high-quality active layer using UR DepositiOS) technology. This will be explained in detail below based on examples.

〔Example〕

Figure 4 shows a flowchart of a method for manufacturing a certain KL panel according to the present invention.

(+) On Pyrex substrate 1, 30 TcL Usino 8
00 to 5000 A, formed by sputtering.

(+1) The resist is buttered according to the pattern, and the Ta electrode 9 is dry-etched.
form a pattern.

Tsukuda) In pure water containing citric acid of 001 weight, TIZ
Perform anodizing at 5° with a sharp current density■01~1
After constant current electrolysis at mp, /Cm2, 30~
After reaching 300VK lightning level, the switch to foot potential thaw continues for about 2 hours until the leakage current is sufficiently reduced. When the thickness of the anodic oxide film is Tn, the final snow pressure is about 15 per volt.

(φ end transition, annealing at 450°C for 1 hour and Ztl
(02H5)2 with H2S and Mn as dopant source (05H4-CH3)(co)s (T, C!
, V-) as He or 1d H2f carrier gas at a substrate temperature of 300°C to 500°C for several minutes. +, S
: The entire M film 11 is grown. Typical gas flow 5- Volume and concentration, total gas flow: 4.57 An, in, z
n(a2H,)2:5X10-' mole/1. , T
, O, M: 3X10-"mole/l, H, B:
2×10-' mote/l. III thickness is determined by time, and under the above conditions, it is approximately 500OA in 5 minutes, M
An AL concentration of 05% is obtained.

(By φ pumping, ■ T012 is 1000
~2000 A is formed to serve as a counter electrode.

The anodic oxide film is not limited to Ta, but M, Tffl, etc. may be used, and the electrolyte may be an organic solvent such as anhydrous ethylene glycol and an electrolyte (Kat, etc.) added to the water plate.

In the case of Ta, a particularly dense insulating film can be formed by anodic oxidation, the surface is flat, and non-uniformity like a splatter film does not occur even at the ends of the electrode, and it is particularly excellent electrically.

FIG. 5 shows a growth system for MO-(!VD.

Flow meter or Hamas flow controller 13.1
The He gas whose flow rate was controlled by 4 was bubbled through the raw material Zn (02H5)2, which is a liquid at room temperature, and the quartz cylinder 18, 19 of the TCM at a concentration corresponding to the equilibrium vapor pressure of It is supplied to the reaction tube 2o. On the other hand, since it is H2S gas, it is not controlled by the flow meter or mass flow controller 17 and is supplied to the reaction tJ as it is.

The glass substrate 21 placed in the reaction tube is heated to 300°C to 50°C by means of resistance heating, infrared heating, high frequency heating, etc.
z71. A polycrystalline film can be grown. The concentration of each raw material is zn(c2H5)2
This is possible by changing the temperature of the TOM cylinder and changing the steam partial pressure f. Also, is the parent material Z? +, (OH3
)2 may be used, and ZnBe may also be used if H2Se is used.

On the other hand, not only dopants but also other transition metals,
It is common practice to dope rare earth elements and the like according to the amount of vapor pressure.

〔effect〕

FIG. 6 shows the brightness-voltage characteristics 23 of the thin film EL device according to the present invention. The horizontal axis shows snow pressure and the vertical axis shows brightness. IKH2v t with insulating film 3000 A and active layer 3000 A
It can be seen that this is a low-voltage light emitting element with h, ~30V compared to the conventional ~200VK, and it is possible to lower the voltage by making the overall film thickness much thinner.

Furthermore, this device has excellent aging characteristics, little change in vth over time, and uniform light emission, so it emits very stable light emission.

This allows you to use a wall-mounted TV as a flat display.
The present invention is widely used as a display device for various terminals, and I am convinced that the present invention will play an important role in the information society.

[Brief explanation of drawings]

FIG. 1 shows the structure of a double insulation structure thin film KL element. FIG. 2 shows the configuration of the M-S structure element. Figures 3(a,) to 3 show a flowchart of a conventional manufacturing method. Figure 4 f1. ) to (e) show flowcharts of the manufacturing method of the present invention. 1.Glass substrate 2.TO film 3.First insulating film 4.Second insulating film 5.Active layer 6.At11 pole 7.AC power supply 8.9.Metal electrode 10・・Anodized film 11 ・・MO-OVD film 12・
・TO Raikusu Figure 5 shows the MO-OVD growth system. 13.14,15,16.17...Mass flow controller 18...T, O, M, cylinder 1q-Z? +, (C!2H5), Cylinder 20...Quartz glass reaction tube 21...Substrate 22...Heat source FIG. 6 shows the light emitting characteristics of the EL element. 23... Teruhen - Voltage force curve and above Applicant Suwa Seikosha Co., Ltd. Agent Patent attorney Tsutomu Mogami 9-

Claims (1)

[Claims] 1) A first electrode, an insulating film, a light emitting layer, a second electrode, and a second electrode on a glass substrate.
The method for manufacturing a thin-film FiL display panel that allows for the formation of light and lightning requires at least the steps of forming an insulating film by anodic oxidation of a metal thin film, and forming a light emitting layer thereon by MO-OVD. A method for manufacturing a thin film EL panel characterized by comprising: 2) The method for manufacturing a thin film FiL panel according to claim 1, which includes a step of electrostatically oxidizing a Ta sputtered film as a method for forming the insulating layer. 3) H2S straddle H2Be and zn(aH,) 2 straddle z
Claims 1 to 3 are characterized in that they include a step of forming a light-emitting layer on an anodic oxide film by an MO-OVD method in which n(c2H6) and a small amount of an organic compound of a transition metal are simultaneously subjected to a decomposition reaction. 2. A method for producing a thin film KL panel according to item 2.