JPS60214105A - Phase shifter - Google Patents
Phase shifterInfo
- Publication number
- JPS60214105A JPS60214105A JP7070184A JP7070184A JPS60214105A JP S60214105 A JPS60214105 A JP S60214105A JP 7070184 A JP7070184 A JP 7070184A JP 7070184 A JP7070184 A JP 7070184A JP S60214105 A JPS60214105 A JP S60214105A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- radio wave
- phase shifter
- dielectric
- changed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/181—Phase-shifters using ferroelectric devices
Landscapes
- Aerials With Secondary Devices (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は1例えば電子的にビームを走査する電波レン
ズなどに用いる移相器の改善に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in a phase shifter used in, for example, a radio wave lens that electronically scans a beam.
第1図は例えばMicrowave Journal
1981年2月号、 P、45〜P、53に示された従
来の電子的にビームを走査する電波レンズに用いられた
移相器を示す図であり1図において111は金属格子、
(2)は印加されるバイアス電圧の極性に応じて等価的
にショート、あるいはオープンの特性を示すピンダイオ
ード、(3)は上記金属格子(1)とピンダイオード(
2)を空間に固定するだめの誘電体板、(4)はピンダ
イオード(2)にバイアス電圧を供給する電源部。Figure 1 shows, for example, Microwave Journal.
This is a diagram showing a phase shifter used in a conventional radio wave lens that electronically scans a beam shown in February 1981 issue, P, 45 to P, 53. In Figure 1, 111 is a metal grid;
(2) is a pin diode that exhibits equivalent short-circuit or open characteristics depending on the polarity of the applied bias voltage, and (3) is a pin diode (
2) is a dielectric plate that fixes the device in space, and (4) is a power supply unit that supplies a bias voltage to the pin diode (2).
(5)は電波の進行方向を示す矢印、(6)は電波の電
界方向(偏波)を示す矢印である。(5) is an arrow indicating the traveling direction of the radio wave, and (6) is an arrow indicating the electric field direction (polarized wave) of the radio wave.
第2図は従来の移相器の動作原理を示す図であり、第2
図(=)は構成図、第2図(b) 、 (C)はピンダ
イオード(2)にそれぞれ順方向あるいは逆方向のバイ
アス電圧を印加したときの等価的な図である。尚。Figure 2 is a diagram showing the operating principle of a conventional phase shifter.
Figure (=) is a configuration diagram, and Figures 2 (b) and 2 (C) are equivalent diagrams when a forward or reverse bias voltage is applied to the pin diode (2), respectively. still.
図中の符号は第1図と同じである。いま第2図(a)に
おいてと−ンダイオード(2)の取付間隔を2分の1波
長以下の寸法とし、また金属格子1llO幅及び間隔を
それぞれ所定の寸法とすることにより、第2図(b)
、 (C)の金属格子(1(は、それを透過する金属格
子fi+に平行な電界方向をもつ電波に対してそれぞれ
誘導性、容量性の回路素子として働き、それぞれ電波の
透過位相量は進み、遅れを生じる。したがって移相器と
して機能する。The symbols in the figure are the same as in FIG. 1. Now, in Fig. 2(a), by setting the installation interval of the thorn diodes (2) to a dimension of 1/2 wavelength or less, and by setting the width and interval of the metal grating 110 to predetermined dimensions, Fig. 2(a) is obtained. b)
, The metal grid (1) in (C) acts as an inductive and capacitive circuit element for radio waves with an electric field direction parallel to the metal grid fi+ passing through it, and the transmission phase amount of the radio waves advances. , resulting in a delay.Therefore, it functions as a phase shifter.
しかし上記のようにビンダイオードを使用するため1例
えばミ’lJ波、サブミリ波帯のように電波の周波数が
高くなると1.ビンダイオード(2)のジャンクション
容量の影響が大きくなり、逆バイアスを印加しても完全
なオープンとならず、そのため順/逆バイアス切換時の
透過位相量の変化が小さくなり、移相器としての特性劣
化が大きかった。However, as mentioned above, since the bin diode is used, 1. When the frequency of radio waves becomes high, such as in the mi'lJ wave or submillimeter wave band, 1. The effect of the junction capacitance of the bin diode (2) becomes large, and it does not become completely open even when reverse bias is applied. Therefore, the change in the amount of transmission phase when switching forward/reverse bias becomes small, making it difficult to use as a phase shifter. There was significant deterioration in characteristics.
また同じく電波の周波数が高くなると、金属格子tl+
の幅1間隔などの寸法精度が厳しくなり、またビンダイ
オード(2)の取付も難しくなるなど製造上問題が生じ
てくる欠点があった。Similarly, as the frequency of radio waves increases, the metal grid tl+
There are drawbacks in that manufacturing problems arise, such as strict dimensional accuracy such as one width interval, and difficulty in mounting the bin diode (2).
この発明はかかる欠点を改善する目的でなされたもので
、高い周波数領域まで使用できる液晶を用いた移相器を
提案するものである。The present invention was made with the aim of improving such drawbacks, and proposes a phase shifter using liquid crystal that can be used up to a high frequency range.
第3図はこの発明の一実施例を示す一部欠截図であり1
図において(4)〜(6)は第1図の従来装置と同じも
のであり、(7)は互いに対向する2組の6電体薄板、
(8)は電波の進行方向に平行でかつ対向する1組の導
体薄板、(9)は(7) 、 (8)で構成されるセル
の中に充てんされた液晶である。FIG. 3 is a partially cutaway diagram showing an embodiment of the present invention.
In the figure, (4) to (6) are the same as the conventional device shown in FIG. 1, and (7) is two sets of 6-electric thin plates facing each other;
(8) is a pair of conductive thin plates parallel to and facing the direction of propagation of radio waves, and (9) is a liquid crystal filled in a cell composed of (7) and (8).
上記のように構成された移相器においては、電波の移相
量は主に電界方向の液晶の誘電率により決まり、それを
いまε とすると、電波の移相量Φは次式で近似できる
。In the phase shifter configured as above, the amount of phase shift of the radio wave is mainly determined by the dielectric constant of the liquid crystal in the direction of the electric field, and if this is now ε, the amount of phase shift of the radio wave Φ can be approximated by the following equation. .
ここで、d:電波の進行方向に対する液晶層の厚さ
λ:電波の波長
第4図は印加電圧と液晶の分子配向の関係を示す実施例
の断面図であり、(a)は電圧を印加しない場合、(b
)は電圧を印加した場合をそれぞれ示す。Here, d: thickness of the liquid crystal layer in the direction of propagation of the radio wave λ: wavelength of the radio wave Figure 4 is a cross-sectional view of an example showing the relationship between the applied voltage and the molecular orientation of the liquid crystal, and (a) If not, (b
) indicates the case where voltage is applied.
図において(4)及び(6)〜(9)は第3図と同じも
のであり、 +flは長い方向が分子配向の方向を示す
液晶の分子、Uυ、 Q2は電源部(4)の中に含まれ
る電源とスイッチをそれぞれあられす。いま第4図(a
)に示すように電圧を印加しない場合、電波の電界と直
交方向になるように分子の配向処理をあらかじめ実施し
ておく。第4図(b)に示すように電圧を印加すると分
子が電波の電界方向に配向する。In the figure, (4) and (6) to (9) are the same as in Figure 3, +fl is a liquid crystal molecule whose long direction indicates the direction of molecular orientation, Uυ, and Q2 are in the power supply section (4). Includes power supply and switch respectively. Now Figure 4 (a
), when no voltage is applied, the molecules are orientated in advance so that they are perpendicular to the electric field of the radio wave. As shown in FIG. 4(b), when a voltage is applied, the molecules are oriented in the direction of the electric field of the radio wave.
第5図は液晶の比誘電率の周波数特性を分子配向方向、
及び配向方向と直交する方向とを比べて示す図である。Figure 5 shows the frequency characteristics of the dielectric constant of liquid crystal in the molecular orientation direction.
FIG. 3 is a diagram showing a comparison between the orientation direction and a direction perpendicular to the orientation direction.
図において、横軸は周波数(H2)。In the figure, the horizontal axis is frequency (H2).
縦軸は比誘電率であり、集磁は分子の配向方向の比誘電
率、破線は配向方向と直交する方向の比誘電率をそれぞ
れあられす。The vertical axis is the relative permittivity, the magnetic flux is the relative permittivity in the orientation direction of the molecules, and the broken line is the relative permittivity in the direction perpendicular to the orientation direction.
以上述べてきたように液晶は外部から電圧を印加するこ
とにより1分子の配向方向を変えることができ、また配
向方向及びそれと直交する方向の誘電率ははとんどの周
波数で異なるため、PX晶のこの特性を用いて印加する
電圧をON / OFFすることにより、電波の電界方
向の液晶の誘電率εを変えることができ、(1]式で示
すようにε、の変化に対応して電波の移相量が変化する
ため、移相器として使用できる。As mentioned above, the orientation direction of one molecule of liquid crystal can be changed by applying an external voltage, and the dielectric constant in the orientation direction and the direction orthogonal to it differs at most frequencies, so PX crystal By turning the applied voltage ON/OFF using this characteristic of , it is possible to change the permittivity ε of the liquid crystal in the direction of the electric field of the radio wave, and as shown in equation (1), the radio wave changes in response to the change in ε. Since the amount of phase shift changes, it can be used as a phase shifter.
この発明は以上説明した通り、液晶へのバイアス電圧に
応じて移相量を変える移相器であるため。As explained above, this invention is a phase shifter that changes the amount of phase shift according to the bias voltage applied to the liquid crystal.
高い周波数領域まで使用できると共に1寸法精度に対す
る制約条件が特にないため、高い周波数領域で使用する
場合の製造上の問題を解決し得る効果がある。Since it can be used up to a high frequency range and there are no particular constraints on 1-dimensional accuracy, it has the effect of solving manufacturing problems when used in a high frequency range.
【図面の簡単な説明】
第11は従来の移相器を示す図、第2図は従来の移相器
の動作原理を示す図、第3図はこの発明の一実施例を示
す一部欠截図、M4図は印加電圧と液晶の分子配向の関
係を示す実施例の断面図。
第5図は液晶の比誘電率の周波数特性を示す図である。
図において[11は金属格子、(2)はビンダイオード
。
(3)は誘電体板、(4)は電源部、(5)は電波の進
行方向。
(6)は電波の電界方向、(7)は誘電体薄板、(8)
は導体薄板、(9)は液晶、α1は液晶の分子、flυ
は電源、αりはスイッチである。
なお図中同一符号は同一または相当部分を示すものとす
る。
代理人 大岩増雄
第2図
(/2) (b)’ CC)
第3図
]
第4図
(0)
IJ4rIIJ
(b)[BRIEF DESCRIPTION OF THE DRAWINGS] Fig. 11 is a diagram showing a conventional phase shifter, Fig. 2 is a diagram showing the operating principle of the conventional phase shifter, and Fig. 3 is a diagram showing an embodiment of the present invention. The cutaway diagram, M4 diagram, is a cross-sectional view of an example showing the relationship between applied voltage and molecular orientation of liquid crystal. FIG. 5 is a diagram showing the frequency characteristics of the dielectric constant of liquid crystal. In the figure, 11 is a metal grid, and (2) is a bin diode. (3) is a dielectric plate, (4) is a power supply section, and (5) is a direction in which radio waves travel. (6) is the electric field direction of the radio wave, (7) is the dielectric thin plate, (8)
is a thin conductor plate, (9) is a liquid crystal, α1 is a molecule of liquid crystal, flυ
is the power supply, and α is the switch. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Masuo Oiwa Figure 2 (/2) (b)' CC) Figure 3] Figure 4 (0) IJ4rIIJ (b)
Claims (1)
行でかつ対向する1組の導体薄板からなる立方体もしく
は直方体のセルと、前記セルの中に充てんされ、外部か
ら上記導体薄板を通して電圧を印加することにより1分
子の配向方向を変化させ、それに伴なって変化する誘電
異方性を有する液晶と、前記液晶に印加する電圧を供給
及び制御する電源部とから構成され、印加する電圧に応
じて変化する液晶の誘電異方性を利用して、上記液晶を
透過するときの電波の移相量を変えることを特徴とする
移相器。A cubic or rectangular parallelepiped cell consisting of two sets of thin dielectric plates facing each other and a set of thin conductive plates facing and parallel to the direction of propagation of radio waves; It is composed of a liquid crystal that changes the alignment direction of one molecule by applying voltage, and has dielectric anisotropy that changes accordingly, and a power supply unit that supplies and controls the voltage applied to the liquid crystal. A phase shifter characterized in that the amount of phase shift of radio waves when transmitted through the liquid crystal is changed by utilizing the dielectric anisotropy of the liquid crystal that changes accordingly.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7070184A JPS60214105A (en) | 1984-04-09 | 1984-04-09 | Phase shifter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7070184A JPS60214105A (en) | 1984-04-09 | 1984-04-09 | Phase shifter |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60214105A true JPS60214105A (en) | 1985-10-26 |
JPH036684B2 JPH036684B2 (en) | 1991-01-30 |
Family
ID=13439172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7070184A Granted JPS60214105A (en) | 1984-04-09 | 1984-04-09 | Phase shifter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60214105A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0472404A2 (en) * | 1990-08-24 | 1992-02-26 | Hughes Aircraft Company | Liquid crystal-based composite material having enhanced microwave birefringence |
EP0472403A2 (en) * | 1990-08-24 | 1992-02-26 | Hughes Aircraft Company | Microwave phase modulation with liquid crystals |
US5194972A (en) * | 1990-08-24 | 1993-03-16 | Hughes Aircraft Company | Microwave phase modulation with liquid crystals |
JPH06216602A (en) * | 1993-01-13 | 1994-08-05 | Nec Corp | Phase shifter |
US5936484A (en) * | 1995-02-24 | 1999-08-10 | Thomson-Csf | UHF phase shifter and application to an array antenna |
WO2011036243A1 (en) * | 2009-09-25 | 2011-03-31 | Technische Universität Darmstadt | Phase shifter for high-frequency signals |
-
1984
- 1984-04-09 JP JP7070184A patent/JPS60214105A/en active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0472404A2 (en) * | 1990-08-24 | 1992-02-26 | Hughes Aircraft Company | Liquid crystal-based composite material having enhanced microwave birefringence |
EP0472403A2 (en) * | 1990-08-24 | 1992-02-26 | Hughes Aircraft Company | Microwave phase modulation with liquid crystals |
JPH04234202A (en) * | 1990-08-24 | 1992-08-21 | Hughes Aircraft Co | Microwave phase modulation by liquid crystal |
US5194972A (en) * | 1990-08-24 | 1993-03-16 | Hughes Aircraft Company | Microwave phase modulation with liquid crystals |
JPH06216602A (en) * | 1993-01-13 | 1994-08-05 | Nec Corp | Phase shifter |
US5936484A (en) * | 1995-02-24 | 1999-08-10 | Thomson-Csf | UHF phase shifter and application to an array antenna |
WO2011036243A1 (en) * | 2009-09-25 | 2011-03-31 | Technische Universität Darmstadt | Phase shifter for high-frequency signals |
EP2309585A1 (en) * | 2009-09-25 | 2011-04-13 | Technische Universität Darmstadt | Phase shifter for high frequency signals |
Also Published As
Publication number | Publication date |
---|---|
JPH036684B2 (en) | 1991-01-30 |
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