JPS60211461A - Electrophotographic sensitive body - Google Patents

Abstract

PURPOSE:To reduce residual potential by laminating on the surface of a conductive substrate, an Se layer, a layer made of a mixture of Se and Se-Te.S, an Se-Te.S layer low in Te content, and a uniform Se-Te.S layer high in Te content in succession. CONSTITUTION:The Se layer 2 having 30-100mum thickness, 4 nines, or preferably, >=5 nines purity, and <=1 ppm oxygen content is formed on the surface of the conductive substrate 1 made of Al, Ni, or stainless steel. On this layer 2, Se and Se-Te(S) are vapor deposited at the same time to form the 2-5mum thick Se and Se-Te(S) mixture layer 3, and further, the Se-Te(S) layer 4 having a Te concn. 4-10wt%, and the uniform Se-Te(S) layer 5 having a Te concn. of 15- 20wt% are formed to obtain an electrophotographic sensitive body.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to an electrophotographic photoreceptor (1-.1!1) and relates to an electrophotographic photoreceptor for a color copying machine.

A photoreceptor with a 5e-3e/K0 configuration for a conventional color copier is:
The 5o-To component distribution in layer I of 3e is TO toward the surface layer.
The distribution is such that the Taki IQ increases, and in the case of such a configuration, the spectral sensitivity, charging characteristics, etc. deteriorate due to wear during long-term use, and the durability also deteriorates. 3゜Se
The component of 5O-70 in the layer Ili-'C゛i' f!
If the layer is uniform and r S e ・1' 4N layer, it is durable and practical! -problem (,1, solution d
'1 Riruga, repeated use 1) Dosano I? The object of this invention is to have a low residual potential, a small repeated potential change 1 FIl, and to be used in full car and sea copying machines. 1 Configuration The configuration of the present invention is to attach a photoreceptor that can be
layer, mixed layer of Se and 5e-1-c (S), 3e -Te (S) with small Te9 degree, 5e with large Te am
-Te (S) This is an electrophotographic photoreceptor characterized by having a uniform layer.

The structure of the photoreceptor of the present invention will be specifically explained with reference to the drawings. As shown in FIG. ) mixed layer 3, and Se −T where T(! 1IIllf is small)
e (S) layer 4, Se -Te (S) with a large Te concentration
)Ml5offU().

The conductive layer support 1 is made of aluminum (A1), Niracle (N
1) Or made of stainless steel #lW >9 electrically conductive material. For AI, JIS 3003.1050.10
A material such as No. 70 that has been surface-treated to form an appropriate oxide film is used.

The 3c layer 2 serves as a charge transport layer (CTL) and a charge retention layer. Therefore, materials in which hole traps are formed are undesirable because they repeatedly increase the surface potential, causing background smudges and a decrease in resolution on copies. As material 1'i+, 4
9, preferably 5 nines or more, and the oxygen content is desirably 1 ppm or less. Film thickness is 30~100
Generally, the thickness is 50 to 70 μm.

Mixed layer 3 of Se and 3e-Te (S) and 5a-Tc with low density (SKFi4 is the difference between the Se layer and the 3e-”le (S) layer with high TO density) The effect is to reduce the charge and optical fatigue caused by the hole 1-wrap or electron 1-wrap.These tend to cause negative afterimages and positive afterimages, and cause potential fluctuations.

The manufacturing method is such that 3e and 5e-Tc(S) can be deposited simultaneously. Even if 3e-Te (S) is deposited immediately after the evaporation of 1 and 1.3e is completed, the human body IPi
1-like result! However, there will be some differences depending on the usage environment. Between repeat 1 and special +1, potential fluctuations are smaller when deposited at the same time. The thickness of this mixed layer is about 2.5 μm. In addition, the 3e-1-e layer is evaporated near the end of the Se deposition, resulting in a J: undulating deposition pattern.

Since the Te of the 3e-1-e layer 4 is set to 15-20 wt%, the Te of the upper layer 4 of the mixed layer 3 of Se and 3c-TO(8)
The concentration may be 4 to 10 W [%].

The upper layer of this mixed layer 3 is Sc-Te (S) The layer 4 is Te
Once 5e-T (! (S)
Close the shutters of the boat.

The amount of evaporation is adjusted by the evaporation time or monitored by a measuring device. After a certain period of time, when Te11 degrees reaches 15-20wt%, the shutter of the boat is opened and Se-Te
(S) is evaporated to 1 to 5 μm (Dq.Te is 25W
Although it is possible to use up to t%, the practical limit is up to 20wt%. At this time, the 3e-Te (S) layer 5 on the surface
The shutter is closed so that the Te concentration becomes 15 to 20 wt%. That is, the 5e-Te (S) layer has a high Te concentration and forms a uniform layer 5.

FIG. 2 shows a time chart of this vapor deposition.

■ is the deposition time of 5OJPli2, ■ is Se and 3e -T
e is the deposition time of the mixed layer 3 with (S), ■ is the deposition time of the Se -Te (S) layer 4 with a small Te of 11 degrees, and IV is T
The deposition time of the se -Te (S) layer 5 with high e concentration is shown.

The se -Te (S) layer has the role of a charge generation layer (CG!-), and by having a uniform layer 5-5 of the Se -Te (S) layer, even if the film is worn out during continuous use, This is to minimize changes in image size and color tone. There is no particular need to add sulfur, but adding it will increase the resistance. The amount to be added is 0.5 to 10 wt%, preferably 1 to 3 wt%. If the amount is too large, it is not preferable because it may cause repeated residual potential and decrease sensitivity.

Figure 3 shows the 3c Se-T(4(S) mixed layer 3 in the photosensitive layer, the Se-Te(S) layer 4 with a low TeFJ degree, and the Se・-To(S) uniform layer 5 with a high TeFJ degree). T of
It is a graph qualitatively showing the OIIi 11 degree distribution.

3.4.5 on the horizontal axis are 3e and 5c-Te, respectively.
(S) Mixed layer 3, Se-TO(S) with low Te concentration
Ilii? 4. This shows the position corresponding to the 5-Tc (S) layer 5 with a large Te1 degree.

Hereinafter, the present invention will be specifically explained with reference to Examples.

6- Example 1 The first vacuum heat @ apparatus having one evaporation boat for Se and one evaporation boat for Se-Te (S) made of stainless steel 14 S tJ S-304.
145gr of 59 class 3e was put into the second boat, 100gr of 5Q-Te (T'018wt%) was put into the second boat, the degree of vacuum was 2×1O-5T orr, and the base humidity was 7
3e in a clean △l drum of 120 mmφ at 8℃,
3e-'l"e without vacuum steaming.

First, Se is evaporated from the first boat at 290°C, and 25 minutes after the start of evaporation, electricity is applied to the second boats 1 to 1. , listen to the shutter, 4.5-5 μm 3e-T (the shutter was closed in the time it took for 4 layers to be stacked).

The first boat 1- was turned off for heating 2 minutes after the completion of Se evaporation. The Te concentration in the surface layer was 7 to 8 wt%. Then, the power continues to be applied to the second boat 5e-
The shutter was turned on and closed at a time when the Te concentration became uniform with 3 to 3.5 layers of 1 m of Te layer. The Te concentration of this 11,r is 18.7 wt%. Immediately after the completion of vapor deposition, cool at t5,
It was taken out of the vacuum evaporation apparatus and kept in the dark for 511 hours.

Comparative Example 1 So River thermal evaporation bowl 1 made with SUS-304
and 5e-Te(S) to 5e-Te(S) using a evaporation support with 1 tree each to the 5e-Te(S) grade 3e 145 to the first bow 1
gr, 5o-Te (Te 12w
1%) 10B, vacuum degree 2X 1051- Or
r,'l=11! I Mi1 degree 78°CT-120
Ill 5O1So-To on △1PIJ drum of n1mφ
I'm watching the sky.

The first bow 1~ was heated to 290°C for a vapor deposition time of 50
80 layers with a thickness of 5271 m were formed in minutes.

Next, the second bow 1 to 1 current was applied for 8 minutes at 340°G to deposit the S O-T Q film (T e
flJqi8,4W+%) by 1!7.

Thereafter, the sample Fl was taken out using the same fl conditions as in Example 1 and stored. , Example 2 Using the same vacuum evaporation apparatus as Example 1, 5
Nine-class 3e 145gr was introduced into the second boat, and Se-Te-8 (Te 18wt%, 32wt%
) Inject 100gr, vacuum degree 2×1O-51orr
, S on a clean A1 drum with a diameter of 120 mm at a substrate temperature of 78°C.
e and 3e-1-e were vacuum deposited.

First, the first boat is energized to deposit 3e at a temperature of 290°C, and after 2.3 minutes, the second boat is energized and 5e-Tc, (
S) was evaporated, and after 5 minutes, the electricity supply to the first vessel I~ was stopped. The second boat also closed its shutters five minutes later. At this time, the Te concentration in the surface layer was 9 to 10 wt%.

Continuing to apply current, the se -Te (S) layer becomes 3 to 3
The sysitter was opened and closed at the time when Te11 degrees became uniform at ,5μ.

Thereafter, samples were taken out under the same conditions as in Example 1 and stored under the same conditions.

Comparative Example 2 The same Se agent was used in the same equipment as in Example 2, and the 9-second boat contained Sc, Te (Te18w+%)1
00gr was added and vapor deposition was performed at the same pressure and the same substrate humidity.

The first bow 1~ was energized at 290℃ for 50 minutes, and the thickness was 52mm.
A 3e film of μm was obtained. Next, the second boat was shuttered; it was heated with electricity to 360° C. for 1 minute, and by operating the shutter, a young film was formed in which the 3e-1-e layer had a temperature of 701° C., 19 wt %, and a thickness of 3 μm.

After steaming, take out the test film under the same conditions as in Example 1.
stored under the same conditions.

The four types of drums used in each of the above implementations +41 and comparative examples were tested on a Ricoh full-color experimental machine, and the results were as shown in the table below. As is clear from the above description, the photoreceptor of the present invention is
The residual potential is low, the decrease in dark potential due to repeating is less than 1/2 to 1/3 of that of the conventional method, and the 1-stomach of Lie 1 to Lie 1i1 is extremely small. It is a photoreceptor suitable for full-color copying machines.

[Brief explanation of drawings]

FIG. 1 is an enlarged sectional view of an example of an electrophotographic photoreceptor according to the present invention, FIG. 2 is a timer 1 of vapor deposition for forming the photoreceptor, and FIG. (This is a graph showing the distribution of pullout e in a constant tl manner. 1... Conductive support, 2... Se layer, 3-3e and S
Mixed layer of e-Te (S), 4... se -Te (S) layer with small To degree, 5- ■(! ' Se -Te (S) layer with large degree. 11- years old 1 figure 2 figure 3 figure ←−6−＋□4−←5 darkness

Claims (1)

[Claims] Conductivity ↑η On the surface of the support are sequentially (2 ren (Sc) layers, selenium (So) and ren (So)-j ruru (Te)
- [Mixed layer of sulfur (S) 1, 5O with small T'0 waterfall degree -
TO・(S)Fi, SC-TO・(S) with large To degree
) An electrophotographic photoreceptor characterized by having a uniform layer.