JPS60206884A - Electrically conductive paste composition - Google Patents

Abstract

PURPOSE:To provide the titled compsn. having thixotropic properties suitable for coating by a dispensing method, by adding a specified alkylenebis (aliph. monocarboxylic acid amide) to a polyimide precursor soln. contg. an electrically conductive filler. CONSTITUTION:150-1,900pts.wt. electrically conductive filler having a particle size of 100 mesh or below (e.g. silver powder) is blended with 100pts.wt. (on a solid basis) soln. of a polyimide precursor having an intrinsic viscosity of 0.3- 3.0, composed of 0.1-50mol% of a repeating unit of formula I (wherein R is a bivalent hydrocarbon group; R' is a monovalent hydrocarbon group; n is at least 1) obtd. by reacting a diaminosiloxane, an org. diamine contg. no Si atom and a tetracarboxylic acid dianhydride and 99.9-50mol% of a repeating unit of formula II (wherein R'' is a tetravalent org. group; R''' is a bivalent org. group which is a residue of an org. diamine contg. no Si atom). 0.5-5wt% alkylenebis (aliph. monocarboxylic acid amide) of formula III (wherein R1 and R2 are each a 6- 24C monovalent hydrocarbon group; R3 is a 1-6C bivalent hydrocarbon group) is added to the resulting soln.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a conductive paste composition imparted with transverse modification, and its object is to provide a polyimide ° group precursor conductive paste composition having thixotropic properties suitable for application by a dispensing method. There is something for each offering.

Traditionally, it has been used as adhesive for bonding semiconductor devices.
It is widely known that conductive paste compositions, typified by polyimide silver paste, which have excellent heat resistance and are highly reliable as semiconductors, have been used. This polyimide silver paste has excellent heat resistance due to its resin component as a binder.

It has low chip contamination due to thermal decomposition products, can withstand the sealing temperature of hermetically sealed semiconductors (470-420℃), and has low ionic impurities such as Na'' and CI-, making it highly effective as a semiconductor. Because of its reliability, it has been used as an adhesive for bonding semiconductor devices. However, this Boli-Imium-based silver paste had the drawback of low lateral deformation. If the precursor is dissolved in solution at high concentration, <
Therefore, the amount of solvent in the final paste was increased, and lateral deformation was less likely to occur. The small lateral deformation is due to the fact that when silver paste is continuously applied to the IJ-V frame using a dispensing method using a syringe, the amount of application varies and due to "sag" There were problems such as the base material dripping onto the frame and contaminating it.

Other uses of polyimide-based conductive paste compositions include end face external electrode materials for chip components, crystal oscillator fixing and electrode adhesives, etc. The polyimide-based conductive paste composition had poor lateral modification and had cone points that did not perform its original function.

The present invention improves these drawbacks by providing a polyimide precursor solution containing a conductive filler.

General formula (in the formula, R and R1 are monovalent hydrocarbon groups having 6 to 24 carbon atoms, and may be the same or different from each other by 1%. R8 is a divalent hydrocarbon group having 1 to 6 carbon atoms) It is a hydrocarbon group.

) The present invention relates to a conductive paste composition containing an alkylene bis aliphatic monocarboxylic acid amide F represented by the following.

To manufacture the conductive paste composition of the present invention.

Additives such as the above-mentioned alkylene bis aliphatic monocarboxylic acid amide F as a conductive filler and thixotropy imparting agent, optionally various surfactants, and a silane coupling agent are added to the polyimide precursor solution to obtain the desired properties. It is common to disperse crosstalk using a method (for example, a mixer-type impact dispersion method). But polyimide containing conductive fillers.

After preparing the system precursor solution, the remaining components such as the acid amyl may be uniformly dispersed therein by a desired method. In the above method, the alkylene bis aliphatic monocarboxylic acid amide may be used as it is;
When the acid amide is in solid form, the acid amide is treated with a solvent (xylene, toluene, butanol, butyl cellosol, etc.) to increase dispersion efficiency and improve thixotropy.
It is preferably used in the form of a swollen dispersion with a medium solids content of 10 to 25% by weight. If this is devised, for example, when a conductive paste composition is manufactured by a shear dispersion method such as stirring or a three-roll method, the acid amide F will be uniformly dispersed and become fine particles.

The alekilenepis aliphatic monocarboxylic acid amide represented by the general formula (1) used in the present invention is as follows.

Generally, those having a molecular weight of about 250 to 900 are used.

A preferred compound of general formula 0 is an ethylene bis aliphatic monocarboxylic acid amide represented by the structural formula.

Further, the amount of the compound of general formula (1) added is usually 0.5 to 5% by weight based on the total amount of the polyimide precursor and conductive filler.
, preferably 0.8 to 2.0% by weight.

If the amount added is too small, lateral modification tends to be insufficient, while if it is too large, plumping from the cured paste composition will be large during use, and for example, when used with an adhesive, the adherend may There is a possibility that the interfacial adhesion force with C4 frame etc.) may decrease.

The quantitative proportions of the components constituting the conductive paste composition of the present invention are generally as follows.・The solid content (polyimide precursor, conductive filler, compound of general formula (1), etc.) is usually 10 to 90% by weight, preferably 5% by weight.
0-80% by weight)-6.

and the others are organic solvents.

The quantitative proportion at the solid content level is 10% of the Boliimi F-based precursor
0 parts by weight of the conductive filler to 1.900 parts by weight, and the quantitative proportion of the compound of general formula (1) is as described above.

As the organic solvent, N-methyl-2-pyrrolidone,
Mention may be made of highly polar basic solvents such as N-N'-dimethylacetamide, N-N'-dimethylformamide, N-N'-dimethylsulfoxide, and hexamethylformamide.

In addition, when a conductive paste composition is produced using the compound #I in the form of a swelling dispersion, the above-mentioned >R=ffJ organic solvent used at this time may be mixed. .

A preferred polyimide precursor used in the present invention is a primary silochitin-modified polyimide F precursor.

Namely, diaminosilochitin, silicon-free organic diamine (silicon-uncontained diamine), and tetracarboxylic hydride (
0.1 to 50 mol %, preferably 1 to 50 mol %, preferably 1 to 50 mol%
20 mol% of repeating units of formula (I) and 50 to 99
．． A siloxal-modified polyimide precursor comprising 9 mol%, preferably 80 to 99 mol% of repeating units represented by the formula [lid].

(However, R is a divalent hydrocarbon group, Te is a monovalent hydrocarbon group, r is a tetravalent organic group, r is a divalent organic group that is the residue of an organic diamine that does not contain silicon, and n is (It is an integer of 1 or more.) The aromatic tetracarboxylic dianhydride used in synthesizing the above silochitin-modified polyimide precursor is as follows.

0 200 to 500, and the typical examples are as follows. Pyromellitic dianhydride, 3, 4, 4'-benzophenonetetracarboxylic dianhydride, 3, γ, 4, 4'-biphenyltetracarboxylic dianhydride, 2,3・4'-biphenyltetracarboxylic dianhydride, 2, 3, 6, 7-naphthalene tetracarboxylic dianhydride, 1, 2, 5, 6-naphthalene tetracarboxylic dianhydride, 1, 4. 5,8-naphthalenetetracarboxylic acid dithermal hydrate, 2,7-bis(3,4
-dicarboxyphenyl)propanihydride, bis(3
・4-dicarboxyphenyl) sulfo dianhydride, 3
・4,9,10-perylenetetracarboxylic dianhydride,
Bis(3,4-dicarboxyphenyl)ether dianhydride, 2,2-bis(2,3-dicarboxyphenyl)propanihydride, l,1-bis(2,3-dicarboxyphenyl)ethane dianhydride . Benzene-1, 2, 3, 4
-tetracarboxylic dianhydride, 2,3,6,7-anthracenetetracarboxylic dianhydride, 1,2,7,8-phenanthresotetracarboxylic dianhydride, and the like.

The silicon-uncombined diamine (diamino that does not contain a silicon atom in the molecule) includes aromatic diamines, aliphatic diamines, and alicyclic diamines represented by H, N -R''-Nl2. It is a group diamine and has a molecular weight of 1 (approximately 10 to 500). diphenyl ether, 2,2-
Bis(4-aminophenyl)propane, 3-diaminodiphenylsulfone.

4,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfide, benzidine, benzidine-3-dicarboxylic acid, benzidine-3-disulfonic acid, benzidine-3-monocarboxylic acid, benzidine-3- Examples include monosulfonic acid, 3-dimethoxy-benzidine, para-bis(4-aminophenoxy)benzene, meta-bis(4-aminophenoxy)benzene, meta-xylylene diamine, para-xylylene diamine, and the like.

Diaminosiloxanes are also used in formulas. Typical examples are as follows.

CH, CH, C diaminosiloxane is used to improve the adhesion between the cured product of the polyimide-based conductive base) M parabolic material and the semiconductor element, or the cured product and the F frame, and to use it as a semiconductor. This greatly contributes to increasing reliability.

The amount of diaminosiloxane used is based on the total amount of diaminosiloxane and silicon-free diamine.

The content is preferably 0.1 to 50 mol%. Furthermore, it is not preferable because the thermal properties are lowered.

The simiquitin-modified polyimide precursor is the aromatic compound mentioned above.
1 The total amount of diaminosiloxane and silicon-uncombined diamine is approximately equimolar to 1 carboxylic dianhydride, and 1 is prepared by a conventional known method in an inert solvent at a temperature usually below 60°C, particularly preferably below 30°C. It can be obtained by polymerization according to the same method.

The solvents used are, for example, N-methyl-2-pyrrolidine, N-N'-dimethylacetamide, N-1'f-
dimethylformamide, N-dimethylsulrh
Examples include highly polar basic solvents such as carbon dioxide and hexamethylphosphoramide. Furthermore, general-purpose solvents such as these solvents, toluene, xylene, benzonitrile, benzene, phenol, and butyl cellosolve can also be used in combination. but.

The amount used should be within a range that does not reduce the dissolution rate of the polyimide precursor produced. In this way, the polyimide precursor is synthesized, but the viscosity of the solution is
The paste containing conductive fillers is too viscous, so in some cases, the precursor solution may be heated and aged at 40 to 80°C to form a solution in advance. It is better to lower the viscosity.

The intrinsic viscosity of the polyimide precursor used in the present invention (including the case of the silochitin-modified polyimide precursor mentioned above) is usually 0.3 to 3.0.

The intrinsic viscosity is calculated using the following formula using N-methyl-2-pyrrolidine as a solvent and at a measurement temperature of 30±0.01°C (in a constant temperature bath); Falling time to of the solution; Falling time C of the solvent measured in the same manner as above; Concentration of the precursor of the polyimide resin (0.5% by weight).

In the present invention, the reaction solvent used in producing the polyimide precursor is usually used as it is as an organic solvent for the conductive paste.

Further, when manufacturing a conductive paste, generally, a conductive filler is first added to a polyimide precursor solution, and then the compound of formula (1) is uniformly dispersed by a desired method.

In the present invention, the conductive filler is usually Au,
Ag, Pd, Pt, Mn, Cu, Ni, A
I, Sn, Fe, Co, Cr or other metal powder or alloy powder thereof, or RnO, Cry, ZnO,
SnO,, Fe2O,, In2O,, PdO, TI, O
,.

Ire, , Phi, Sb, 0. , Bi2O,, Cd
Use one or more oxidized powders such as O.

Further, carbon graphite and carbon black can be used in combination.

However, preferably Au powder, Ag powder, Ag powder and P
It is a mixed powder with d powder, and more preferably - powder. These conductive fillers come in various shapes depending on their manufacturing method, and include dendritic powder, scaly powder, spherical powder, porous powder, needle-shaped powder, and the like. Preferably.

It is best to use dendritic powder or scaly powder. These conductive powders are generally 101) mesh free pass, preferably 32
5 It is good that it is a free bus.

The amount used is usually about 60 to 95% by weight, preferably about 70 to 90% by weight per composition*@4.^ type in.

To cross-disperse the conductive filler in a polyimide precursor solution, it is best to use a dispersing machine such as a three-roll mill or a ball mill. It is better to use It is preferable to cross-disperse the alkylene bis aliphatic monocarboxylic acid amide, which is the thixotropic agent, or a swelling dispersion thereof at the same time as the dispersion of the conductive filler in terms of work efficiency, but dispersion by post-addition is also possible. do not have.

The conductive paste composition made of the polyimide precursor Pine Gu obtained in this manner can be used, for example, as an adhesive. - For example, after coating this on a lead frame, further mounting a semiconductor element, drying and curing to remove the organic solvent.

When heated to a high temperature of 200 to 300°C, the polyimide precursor undergoes an intramolecular ring-closing reaction (imide V conversion) and hardens.
This is to firmly bond the semiconductor element and the lead frame. Moreover, since the conductive paste composition according to the present invention has excellent thixotropy (high thixotropy), it has excellent workability in the dispensing coating method using a syringe.

The conductive paste composition obtained according to the present invention is excellent in the dispensing coating method due to its high thixotropy, so it can be used in various fields where a coating method using screen printing IC is used, which also requires thixotropy. In addition to adhesives for bonding semiconductor devices, we also use adhesives for electronic components and other applications, such as ceramic edge external bridges for chip components (chip capacitors, chip resistors, etc.) that require high adhesive strength. It is also used as a conductive adhesive between the quartz plate and frame of a quartz oscillator, and is also useful as a printed wiring conductor for printed circuit boards. In other words, this conductive paste composition can be used as a bonding adhesive for hybrid ICs and monolithic ICs, or for chips such as chip condensers and chip resistors, for which conventionally only inorganic silver pastes such as low-melting point glass frit silver pastes could be used. It is widely used as an electrode material in the parts field, as a conductive adhesive/electrode material for fixing crystal resonators, and as an electrode material for liquid crystal display cells.

1 to 5 show examples of these uses. 1st
Figure (A) is a plan view of Hypritz I''IC.

Figure (B) is a sectional view taken along the line 1=I. 1 in both figures
is metal envelope, 2m, 2b, 2c, 2d, 2
e is Li V Bin. 3 is a substrate made of aluminum, alumina, glass epoxy, etc., and conductor layers 4a, 4b, 4c, 4d, 4e,
4f, 4g, 4h, 4i4j, and 4 are provided with 41. These conductor layers.

A paste containing silver, gold, silver-palladium, etc. as a conductive filler and an organic polymer and low melting point glass as a binder is coated on a substrate, and after removing the solvent, it is heated to 700 ~
Sintering is performed at approximately 1,200°C.

A semiconductor element 5 is firmly adhesively fixed on the conductor layer 4c by a paste cured layer 6 formed using the conductive paste composition of the present invention.

This adhesion was achieved by providing a predetermined amount of the conductive paste composition on the conductor layer 4c, placing the semiconductor element 5 thereon, and heating and curing (imidizing) the composition. 7a, 7b are other conductor layers 4b, 4d
Bonding wire for electrical connection with 8a
, 8b, and 8c are chip components such as resistors, capacitors, and diode F. Reference numeral 9 denotes a heat sink on which the substrate 1 is placed, and the heat sink 91 is provided with a conductor layer 1o electrically connected to the conductor layer 4a by a wire 111 for grounding. 11 is a seal Ik made of epoxy resin or the like;
Il fat.

Reference numeral 12 designates an m-finger engagement portion made of epoxy resin or the like for sealing the externally extending portions of the IJ'M pins 2a to 2c.

FIG. 2(A) is a top view of the monolithic IC with the sealing resin layer omitted, and FIG. In both figures, 13 is a lead frame, on which a semiconductor element 14 is firmly adhesively fixed by a paste cured layer 15 formed using the conductive paste composition of the present invention. This bonding is performed in the same manner as the bonding of the conductor layer and semiconductor element in the hybrid tC described above. 16m and 16b are other glue-V frame 14m, 14blC bonding wire 17m.

The electrode electrically connected by 17b, 18 is t')
Seal the above parts together by y space molding etc.+h
This is a sealing resin layer made of epoxy resin or the like.

FIG. 3 is a cross-sectional view of a chip capacitor.

In the figure, 19 is BaTi0. , Tie, etc., 20 is formed by sintering from a conductive paste composition containing an organic polymer and a low melting point glass as a binder, inorganic silver, and gold.

This is an internal electrode made of a cured paste such as silver-palladium. 21m and 21b are external electrodes formed by curing the conductive paste composition of the present invention, which are provided so as to connect these internal electrodes in parallel.

This chip capacitor is made of BaTi0. , Tie
, etc. A tetraelectric paste composition such as inorganic silver, gold, #-palladium, etc. is applied to a thin film sheet of a ceramic material whose main components are 1!, etc. JL, re-stack this clan sheet from a few layers to several thousand meters to 700 to 1.200.
It is obtained by providing an external electrode which is sintered at about 0.degree. C. and then hardened with the paste composition of the present invention. In addition,
External electrodes are used when soldering chip capacitors.
To prevent the elution of silver into solder as a conductive filler,
A plating layer of Ni or the like may be provided in some cases.

FIG. 4 is a cross-sectional view of the chip resistor. Alumina substrate 2
A resistor element 23 made of a thick film of ruthenium oxide, carbon, etc. is provided at 2h.

Reference numeral 24 denotes a paste cured product formed by heating and curing (imitation) the conductive paste composition of the present invention, and a solder plating layer 26 and a solder plated layer mainly made of tin to improve soldering properties. The external electrode 25 is constituted together with the nickel layer 24'.

This nickel 24' may be provided to prevent silver as a conductive filler from being eluted from the cured paste 24 when the external electrode 25 is soldered.62
7 is a protective film made of glass.

FIG. 5(A) is a cutaway side view of the crystal oscillator. Silver-gold metal 29m and 29b are provided on both sides of the crystal plate 28. FIG. 2B is a cross-sectional view of the crystal plate 28 provided with the films 29a and 29b. 29'a, 29'
b is a paste cured product formed by thermally curing (imidizing) the conductive paste composition of the present invention, and has the function of bonding the crystal plate 28 and the V frames 31a, 31b, and - Gold lI films 29a, 29b
together with the electrode 30a.

30b. 32 is a metal case.

This invention will be explained below by way of examples.

In each example and comparative example, as a measure of lateral degeneration,
The thixotropic index was defined by the following formula.

Rocking degree = □ Ma However, l: BH type rotational viscosity needle manufactured by Tokyo Keiki ■.

Viscosity (voice) at 25°C measured at 2r using rotor No. 7 Same (viscosity (voice) at 20 rpm) Example 1 Equipped with a stirrer, cooling tube, temperature II' meter and nitrogen purge device In the flask', N-methyl-2-pyrroli F719
Add B, 3f and add 0.879 (0,0035 mol) of bis(3-aminopropyl)tetramethyldisiloxane 4.
1-ty Ami/97z=Luete+L'19. :l(0
, 0965 mol) and stirred until dissolved. Next, 29.4 F (0.1 mole) of 3-4-4'-biphenyltetracarboxylic dianhydride was gradually added. The reaction system was maintained below 30° C. and stirred until a clear viscous solution was obtained. Next, the reaction system was kept at 60°C for 8 hours,
After this heating and aging process, the non-volatile solid content is 20 JI weight%,
A solution of a polyimide precursor having a solution viscosity of 42 () voids was prepared.

Solution of the obtained Boliimi p precursor 1110 F (solid content 20 t) K, 325 mesh free pass scaly silver powder (i & large particle size 32 pm, IP average particle size 5.1 μy + z) 9
6 and 6 f were added and kneaded with three rolls to disperse in the solution of Boliimi F precursor. During the mixing and dispersion process using these three rolls, a swollen dispersion paste of ethylene bis and amyl stearate F in xylene (active ingredient 20% by weight) 5.83
f was added and dispersed together with silver powder in a solution of polyimide 1'' precursor to produce a conductive paste composition of the present invention.

When the thixotropy of the filled silver paste composition was measured,
4.21, thixotropic power 1 high 1. ) It turned out that. In addition, the viscosity at 21) rprt+ was 900 poise. Next, fill 5f of this into a 5cc syringe,
When I applied it continuously using a dispenser on a 9-F frame Gui bonding plate at an air pressure of 5 kg/cd, it was found that the amount of discharge (less unevenness, fixed amount application, and no dripping) It was found that the coating workability was excellent as there was no "". After coating, the semiconductor element was adhered and dried and cured at 120 DEG C. for 30 minutes and at 200 DEG C. for 60 minutes.

The adhesive force between the semiconductor element and the IJ-V frame was measured using a push-nibble gauge and was found to be 105 kf/j. When we investigated the adhesive strength at 350℃ in the same way, we found that
The adhesive force was 25 kf/d, and showed an adhesive strength that did not cause any problems in assembly in one assembly process.

Example 2 In the same manner as in Example 1, 2.4859 (0.01 mol) of bis(3-aminopropyl)tetramethyldisiloxane was added in 210 of N-methyl-2-pyrrolidone and 4.
4'-diaminodiphenylmethane 17.82f (0,0
9 mol) and then 32.2 f (0.1 mol) of 3-4-l-benzophenonetetracarboxylic dianhydride (0.1 mol).
was reacted, and the nonvolatile solid content was 19.8% by weight, and the solution viscosity was 1.
A polyimide precursor solution with 43 voids was prepared.

This polyimide)' precursor solution 10.Of (solid content 19.
8f) K, 325 mesh free pass scaly silver powder (maximum particle size 32 pm, 'l' average particle size 3.3 am) 99
．． Add Of.

The three rolls caused crosstalk and dispersion. This paste composition 10
To 0 t, 1.80 t of the ethylene bisstearamide used in Example 1 (active ingredient 20% by volume) was added, dispersed again with three rolls, and shaken. A conductive paste composition of the present invention was prepared with a viscosity of 830 voids at 3.73.2 Orpm.

In the same manner as in Example 1, the coating workability of the dispense method was investigated.
The adhesive strength between the semiconductor element and the lead frame after drying and curing for 0 minutes is 95 kf/cd, and 23 kf/cd at 350°C.
cd and showed sufficient adhesive strength.

Example 3 The conductive silver paste composition of the present invention prepared in Example 2 was packed in a 5cc syringe with 5f, and placed on a 4270I lead frame used for assembling a hermetically sealed crystal oscillator at an air pressure of 3kf/d. After adhering the crystal diaphragm, the mixture was dried and cured at 120° C. for 30 minutes and 275° C. for 90 minutes, and fixed by adhesive. Using low melting point glass,
The top and bottom of the special glass container were sealed at 470° C. for 10 minutes to produce a hermetically sealed crystal oscillator. Dispenser application work in this process allows for quantitative application, and
It was found that there was no dripping from the tip of the syringe, and the coating workability was excellent. Also, the adhesive strength between the 42 alloy lead frame and the crystal diaphragm is sufficient.

There was no conductivity failure after dropping from a height of 75 tM onto hardwood. In addition, since it can withstand sealing with low melting point glass, it has sufficient heat resistance, and the conductive paste composition of the present invention is useful in applications other than adhesive bonding for semiconductor devices. Understood.

Comparative example 1 100 t of polyimide precursor solution used in Example 2.

Scaly silver powder 99. Of was mixed and dispersed using three rolls. The thixotropy of this paste composition is 1.43,
The viscosity at 20 rpm was 890 voids.

When the coating workability was examined in the same manner as in Example 2, there was variation in the discharge amount, and quantitative coating was difficult. Furthermore, the paste composition is used during application.

In some cases, it dripped onto the lead frame other than the bonding plate, contaminating the IJ-M frame. However, what is the adhesive strength between the semiconductor element and the F frame when it is properly applied?

It was the same as Example 2.

The Na+ and C1 ion contents of the paste compositions obtained from the above Examples and Comparative Examples were as follows. That is, the composition was heated to 120°C.

Distilled water 50F was added to 5 tons of 150 mesh bath product obtained by drying and curing at 200°C for 60 minutes and pulverizing for 3 () minutes, followed by 121°C and 2 atm.

The Na'' and C1 contents of the extracted water extracted for 20 hours were each 5 PPM or less.

[Brief explanation of drawings]

11 to 5 show examples of use of the conductive silver paste composition of the present invention, FIG. 1(A) is a plan view of a hybrid FIC, and FIG. 1(B) is the above-mentioned FIG. 1. (A) f
-1 line sectional view, FIG. 2(A) is a cross-sectional view of the monolithic IC with the sealing resin layer omitted, and FIG. 2(B) is the above-mentioned FIG.
Figure 3 is a cross-sectional view of a chip capacitor, Section 41 is a cross-sectional view of a chip resistor, Figure 5 (A) is a cross-sectional view of A).
) is a cutaway side view of the crystal oscillator, and FIG. 5(B) is the above-mentioned fifth
FIG. 3 is a top view of the crystal resonator portion in FIG. Figure 2 Figure 3 Figure 4

Claims (1)

[Scope of Claims] A polyimide precursor solution containing a +11 conductive filler is added to a polyimide precursor solution containing the general formula (wherein R0 and R3 are monovalent carbon hydrogen groups with 6 to 24 carbon atoms, and are the same as each other). R3 is a divalent hydrocarbon group having 1 to 6 carbon atoms.) An electrically conductive paste composition prepared by adding an alkylene bis aliphatic monocarboxylic acid amine V represented by the following. (2) The amount of the alkylene bis aliphatic monocarboxylic acid amide added is 0.5 to 5% by weight based on the total weight of the polyimide precursor and the conductive filler. Conductive paste composition. 13) As an alkylene bis-aliphatic monocarboxylic acid amide, a fatty acid amide is added in an organic solvent at a solid content of ゛ 10 to 2.
The conductive paste composition according to claim 1 or 2, which uses a swelling dispersion formed by swelling and dispersing at a ratio of 5% by electric charge. 0.1 to 50 mol % of repeating units of formula (It) and 50 to 99.9 mol % of formula (III
) The conductive paste composition according to any one of claims 1 to 3, which is a simiquitin-modified Boliimi F precursor consisting of repeating units represented by the following. (However, R is a divalent hydrocarbon group, R' is a monovalent hydrocarbon group, R# is a tetravalent organic group, r is a divalent organic group that is the residue of an organic diamine that does not contain silicon, n is an integer greater than or equal to 1). 16) Claim 1 in which the conductive filler is silver powder
The conductive paste composition according to any one of Items 1 to 4.