JPS6020516A - Dry etching method of silicon nitride film - Google Patents
Dry etching method of silicon nitride filmInfo
- Publication number
- JPS6020516A JPS6020516A JP12700883A JP12700883A JPS6020516A JP S6020516 A JPS6020516 A JP S6020516A JP 12700883 A JP12700883 A JP 12700883A JP 12700883 A JP12700883 A JP 12700883A JP S6020516 A JPS6020516 A JP S6020516A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- dry etching
- film
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 12
- 238000001312 dry etching Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 4
- 238000005530 etching Methods 0.000 claims abstract description 29
- 239000007789 gas Substances 0.000 claims description 26
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000001020 plasma etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- IHZXTIBMKNSJCJ-UHFFFAOYSA-N 3-{[(4-{[4-(dimethylamino)phenyl](4-{ethyl[(3-sulfophenyl)methyl]amino}phenyl)methylidene}cyclohexa-2,5-dien-1-ylidene)(ethyl)azaniumyl]methyl}benzene-1-sulfonate Chemical compound C=1C=C(C(=C2C=CC(C=C2)=[N+](C)C)C=2C=CC(=CC=2)N(CC)CC=2C=C(C=CC=2)S([O-])(=O)=O)C=CC=1N(CC)CC1=CC=CC(S(O)(=O)=O)=C1 IHZXTIBMKNSJCJ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、ドライエツチング方法に関し、特に、半導体
ゾロセフ、ＶＣ用いられる窒化シリコン（以下Ｓｉ３Ｎ
４と記す）膜葡乱速度でドライエツチングすることので
きる方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a dry etching method, and particularly to a dry etching method for dry etching of silicon nitride (hereinafter referred to as Si3N) used in semiconductor Zorosef and VC.
4) relates to a method capable of dry etching at a film disturbance rate.
（技術的背景及び従来技術）
半導体派業において、集積回路全はじめとする電子デ／
々イスの微細ノミターンの製造に際し、プラズマエツチ
ング、スノ々ツタリングエッチンク、反応性イオンエツ
チング、イオンビームエツチングなどのドライエツチン
グ技術が広く用いられている。このドライエツチング技
術は、溶液を用いたウェットエツチング技術に比べて微
細加工性、制御性に優れ、工程の簡略化、自動化が容易
で、公害問題も極めて少ないなどの利点を有するが、そ
れぞれ特殊な装置を必要とする。しかしながら上記した
利点を有しているので広く使われるようになってきた。(Technical background and prior art) In the semiconductor industry, electronic devices such as all integrated circuits are
Dry etching techniques such as plasma etching, splatter etching, reactive ion etching, and ion beam etching are widely used in the production of fine chimney turns for chairs. This dry etching technology has advantages over wet etching technology using a solution, such as superior microfabrication and controllability, easy process simplification and automation, and extremely few pollution problems. Requires equipment. However, since it has the above-mentioned advantages, it has become widely used.
ところで、集積回路の製造において選択酸化法のマスク
や半導体素子の保護膜として広（用いられている５ＩＢ
Ｎ４膜のドライエツチングには、一般に数％の酸紫ガス
を含んだ四フッ化炭素（ＯＦ４）ガスが用いられている
。しかしこのエツチングガスによる５ｋＢＮ４膜のエツ
チングレートば、通常５０ Ｎ１００ ｎｍ／ｍｉｎ程
度でアリ、とれは同じエツチングガスを用いたＳｉ膜に
対するエツチングレートと比べ１桁以上遅い。また、Ｓ
ｉ３Ｎ４膜とその下地として通常使用されている５ｉ０
２膜とのエツチングの速度比（以下選択比と記す）は、
５ｉ−Ｎと５ｉ−０の結合エネルギーが近い値であるた
め小さく、Ｓ ｉ ０２膜上のＳｉ３Ｎ４膜？、パター
ニングされたホトレジストをマスクとしてドライエツチ
ングするときに下地のＳ ｉ０２膜寸でエツチングが入
り込んでしまうため実用性に問題があった０
またエツチングガスとして四フッ化炭素（ＯＦ４ ）ガ
スに代えて四フッ化ケイ素（ＳｉＦ４）ガスを用いるこ
とでエツチングレート選択比が向上することが知られて
いるがこのＳｉＦ４ガスは、毒性を有するため実用的で
なく、あまり使用されていない。このように、、Ｓｉ３
Ｎ４膜のドライエツチングには問題点が多く、その改善
が、強く望まれていた。By the way, 5IB is widely used as a mask for selective oxidation and as a protective film for semiconductor elements in the manufacture of integrated circuits.
Carbon tetrafluoride (OF4) gas containing several percent of acid violet gas is generally used for dry etching of the N4 film. However, the etching rate of a 5kBN4 film using this etching gas is usually about 50 N100 nm/min, and the chipping is more than an order of magnitude slower than the etching rate of a Si film using the same etching gas. Also, S
5i0, which is commonly used as an i3N4 film and its base.
The etching speed ratio (hereinafter referred to as selectivity ratio) between the two films is:
The bond energies of 5i-N and 5i-0 are close to each other, so they are small, and the Si3N4 film on the Si02 film? However, when performing dry etching using a patterned photoresist as a mask, there was a problem in practicality because the etching penetrated into the underlying Si02 film.0 Also, carbon tetrafluoride (OF4) gas was used as the etching gas instead of carbon tetrafluoride (OF4) gas. Although it is known that the etching rate selectivity can be improved by using silicon fluoride (SiF4) gas, this SiF4 gas is not practical due to its toxicity and is not often used. In this way, Si3
Dry etching of N4 films has many problems, and improvements to these problems have been strongly desired.
（本発明の目的）
本発明は、上記要求に鑑みなされたものでＳ ＋ ３
Ｎ４ 贋のエツチングレート及び選択比を向上させ実用
性の冒いドライエツチング方法の提供を目的とするもの
である。(Objective of the present invention) The present invention has been made in view of the above requirements.
The object of the present invention is to provide a dry etching method that improves the etching rate and selectivity of N4 imitations and is less practical.
ｃ本発明の構成）
すなわち、本発明は５ｉ３Ｎ４Ｌ、ｊｋドライエツチン
グする方法において、ゾ２ズマ発生用チャンノ々−に三
フッ比窒素（ＮＦｓ）ガスを導入し高周波全印加してプ
ラズマを発生させて、それによ５Ｓｊ、Ｎ４膜をエツチ
ングすることを特徴とするドライエツチング方法である
。c) Structure of the present invention) That is, the present invention is a 5i3N4L, jk dry etching method, in which trifluorinated nitrogen (NFs) gas is introduced into the channels for zimmer generation, and a high frequency is fully applied to generate plasma. This dry etching method is characterized in that it etches a 5Sj, N4 film.
本発明で用いられるＮＦ３ガスは、常温においてガス状
で毒性のない安定なガスであるため、ガスダンベに充て
んして市販されているもの全使用することができる。そ
してＳｉ３Ｎ４膜をエツチングする時の好ましい条件と
しては、使用するプラズマエツチング装置にもよるが通
常１０〜１００１ｎＩ！／ｍ目１の範囲で用いられる。Since the NF3 gas used in the present invention is a gaseous, non-toxic and stable gas at room temperature, any commercially available NF3 gas filled in a gas dumbbell can be used. The preferred conditions for etching the Si3N4 film are usually 10 to 1001 nI! depending on the plasma etching equipment used. Used in the range of /mth 1.
また、プラズマエツチング装置としては、どのようなも
のでも使用することができ・使用条件としくは、圧力が
１３．３〜１３３Ｐａ（Ｑ、１− Ｉ Ｔｏｒｒ ）お
よび出力が５０〜２００Ｗの範囲で用いるのが好ましい
。また本発明のドライエツチング方法においてはエツチ
ング用ガスの主成分としてＮＦ、ガスを用いるが、通常
使用されるように酸素ガス、窒素ガスまたは、ヘリウム
ガス、アルゴンガスなどの不活性ガスを添加混合しても
問題はない。Furthermore, any plasma etching device can be used.The conditions for use include a pressure of 13.3 to 133 Pa (Q, 1-I Torr) and an output of 50 to 200 W. is preferable. In addition, in the dry etching method of the present invention, NF and gas are used as the main components of the etching gas, but oxygen gas, nitrogen gas, or an inert gas such as helium gas or argon gas may be added and mixed as is commonly used. There is no problem.
本発明のドライエツチング方法は、特別な工程を組み込
むことな（通常のドライエツチングプロセスと同様の工
程により行うことができる。すなわちＳ ｒａＮｉ 版
に有する基板全プラズマ発生用テヤンノ々−内に載置し
、真空ポンプによシ、チャンバー内を排気した後ＮＦ３
ガスを一定流速で導入し、チャンバー内金一定圧力に調
節し、高周波をかけてグラズマ金発生させエツチングす
る。The dry etching method of the present invention does not require any special steps (it can be carried out using the same steps as a normal dry etching process. In other words, the entire substrate of the SraNi plate is placed in a plasma generation chamber. After evacuating the chamber using a vacuum pump, NF3
Gas is introduced at a constant flow rate, the gold pressure inside the chamber is adjusted to a constant value, and high frequency is applied to generate and etch the glazma gold.
以下、本発明孕笑施例および比較例によ）詳細に説明す
る。Hereinafter, the present invention will be explained in detail using Examples and Comparative Examples.
実施例１
平行平板〃１リノ”′ラズマエッチング装置としてＯＡ
ＰＭ−４００（ｒｍ品名、東京応ｒヒエ業株式会社製）
を用い、真空ポンプで１．３３ Ｐａ Ｃ０，ＯＩ Ｔ
ａｒｔ ） １で排気した殻、ＮＦ３ガスを、１０ ｍ
／／ｌ旧ｎの速度で流し、圧力ｆ ４０ Ｐａ （０，
３Ｊ、’ｏｒｒ ）、出力１５０Ｗの条件下で、酸【ヒ
膜を有する１００謳φのシリコン基板上の１００ ｎｍ
厚のＳ ｉ３ Ｎ４１ｉＷのエツチングを行ったところ
、２８０〜３００ ｎｍ／ｍｉｎのエツチングレート？
示した。また下地の５ｉ０２膜との選択比は、４〜５で
あった。Example 1 Parallel plate〃1 Reno'' OA as a plasma etching device
PM-400 (rm product name, manufactured by Tokyo Oirhie Co., Ltd.)
using a vacuum pump at 1.33 Pa C0,OIT
art) The shell and NF3 gas exhausted in step 1 were
Flowing at a speed of //l old n, pressure f 40 Pa (0,
3J, 'orr), 100 nm on a 100 mm diameter silicon substrate with an acid film under conditions of an output of 150 W.
When etching thick Si3N41iW, the etching rate was 280 to 300 nm/min.
Indicated. Moreover, the selectivity with respect to the underlying 5i02 film was 4 to 5.
比較例１
実施例１と同じ条件で、エツチングガス（ｒＯＦ＜（９
２ｗ−Ｉｌ−％） ＋ ０２ （８ｗｔＸ）ガスに変え
て８１３Ｎ４膜のエツチングを行ったところ６０ ｎｍ
／ｍｉｎの速度でエツチングされ、５ｉＯｚ膜との選択
比は２〜３であった。Comparative Example 1 Under the same conditions as Example 1, etching gas (rOF<(9
When the 813N4 film was etched using 2w-Il-%) + 02 (8wtX) gas, the thickness was 60 nm.
/min, and the selectivity with respect to the 5iOz film was 2 to 3.
実施列２
平行平板型プラズマエツチング装置としてＯＡＰＭ−４
００Ｃ商品名、東京応化工業株式会社ム“Ｊ）を用い、
真空ポンプで１．３３Ｐａ（０，０１Ｔｏｒｒ）ｔで排
気した後にＮＦ３ガスを２４ ｍｌ！／′ｍｒｎの速度
で流し、圧力５０ Ｐａ （０，４Ｔｏｒｒ’）、出力
５０Ｗの条件で１００ ｎｍ厚のＳ ｉ Ｂ Ｎ４股の
エツチングを行ったところ、２１５ ｎｍ／ｍｉｎのエ
ツチングレートが得られ、下地の５ｉ０２膜との選択比
は４〜５であった。Implementation row 2: OAPM-4 as a parallel plate type plasma etching device
Using the 00C product name, Tokyo Ohka Kogyo Co., Ltd.
After exhausting at 1.33 Pa (0.01 Torr) with a vacuum pump, 24 ml of NF3 gas was added! /'mrn, a pressure of 50 Pa (0.4 Torr'), and an output of 50 W were used to etch four 100 nm thick S i B N, an etching rate of 215 nm/min was obtained. The selectivity with respect to the underlying 5i02 film was 4 to 5.
（本発明の効果）
本発明のドライエツチング方法によ扛ば、エツチングガ
スとしてＮＦＳカスを用いることで、従来の○Ｆ４ ＋
’ｏ２系ガスに比べて、Ｓｉ３Ｎ４膜のエツチングレー
トが３〜６倍と高く、エツチング処理時間が大巾に短縮
でき、また、低出力でも高いエツチングレートが得られ
るため、プラズマによるマスク材料や下地に対してのダ
メージが少なく・安定な状態で製品が得られ、生産性が
極めて筒〈なル、大量生産によるコストダウンが可能で
ある。さらにＳｉ３Ｎ４膜の下地として多く使われてい
るＳ ｉ ０２膜に対しての選択比も向」二されるため
、品質的にも良いものｋ Ｋ４’Ｌることかできる。(Effects of the present invention) According to the dry etching method of the present invention, by using NFS scum as the etching gas, the conventional ○F4 +
The etching rate of the Si3N4 film is 3 to 6 times higher than that of 'O2-based gas, and the etching time can be greatly shortened.Also, a high etching rate can be obtained even at low output, so it is possible to etching mask materials and substrates using plasma. Products can be obtained in a stable state with little damage to the product, and productivity is extremely high, making it possible to reduce costs through mass production. Furthermore, since the selectivity with respect to the SiO2 film, which is often used as a base for the Si3N4 film, is improved, it is possible to obtain a product of good quality.
出願人 東京電子化学株式会社 代理人 弁理士 井 坂 實 夫Applicant: Tokyo Denshi Kagaku Co., Ltd. Agent: Patent Attorney Minoru Isaka
Claims (1)
ラズマ発生用チャンバー内に三フッ化窒素ガス全導入し
、高周波を印加して減圧下グツズ、マを発生させ、それ
により窒化シリコン膜ヲエッチングすることを特徴とす
るドライエツチング方法。The method for dry etching a silicon nitride film is characterized by completely introducing nitrogen trifluoride gas into a plasma generation chamber, applying high frequency to generate dirt under reduced pressure, and thereby etching the silicon nitride film. Dry etching method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12700883A JPS6020516A (en) | 1983-07-14 | 1983-07-14 | Dry etching method of silicon nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12700883A JPS6020516A (en) | 1983-07-14 | 1983-07-14 | Dry etching method of silicon nitride film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6020516A true JPS6020516A (en) | 1985-02-01 |
Family
ID=14949399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12700883A Pending JPS6020516A (en) | 1983-07-14 | 1983-07-14 | Dry etching method of silicon nitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6020516A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63168A (en) * | 1986-06-19 | 1988-01-05 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS63171A (en) * | 1986-06-19 | 1988-01-05 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS641236A (en) * | 1987-03-20 | 1989-01-05 | Applied Materials Inc | Method for selectively etching thin film and gas mixture used therefor |
| US5180466A (en) * | 1984-12-29 | 1993-01-19 | Fujitsu Limited | Process for dry etching a silicon nitride layer |
| US5401358A (en) * | 1991-03-29 | 1995-03-28 | Sony Corporation | Dry etching method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52131470A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS5749234A (en) * | 1980-09-08 | 1982-03-23 | Semiconductor Energy Lab Co Ltd | Plasma etching method |
-
1983
- 1983-07-14 JP JP12700883A patent/JPS6020516A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52131470A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS5749234A (en) * | 1980-09-08 | 1982-03-23 | Semiconductor Energy Lab Co Ltd | Plasma etching method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5180466A (en) * | 1984-12-29 | 1993-01-19 | Fujitsu Limited | Process for dry etching a silicon nitride layer |
| JPS63168A (en) * | 1986-06-19 | 1988-01-05 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS63171A (en) * | 1986-06-19 | 1988-01-05 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS641236A (en) * | 1987-03-20 | 1989-01-05 | Applied Materials Inc | Method for selectively etching thin film and gas mixture used therefor |
| US5401358A (en) * | 1991-03-29 | 1995-03-28 | Sony Corporation | Dry etching method |
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