JPS60202285A - Hydro-extracting drying device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a draining and drying apparatus used for draining and drying silicon wafers, liquid crystal glasses, photomask glasses, lenses, and other thin objects to be processed.

As shown in Figures 1 and 2, the conventional drain dryer used to drain and dry silicon wafers, liquid crystal glass, photomask glasses, lenses, etc. after washing them with water has a housing. A table-shaped rotor 3 is provided inside the rotor 2, and a plurality of carrier holders 4 are fixed to the rotor 3. After silicon wafers and the like to be drained and dried are stored in a basket-shaped carrier, the carrier is set in the carrier holder 4 described above. In this state, turn on the power and rotate the rotor 3 at 500~1500r, p.
When the device is rotated at a high speed of m, water droplets adhering to the silicon wafer etc. are blown away by centrifugal force, and water is removed. Furthermore, the drying gas sucked in by using the negative pressure generated in the center by the rotation of the carrier holder 4 etc. dries the surface of the silicon wafer etc.

“However, in the conventional draining device configured in this way, the surface of a silicon wafer, etc. that rotates at high speed with the 1-ter is frictionally charged with gas, and static electricity is generated. As a countermeasure, there is a technology proposed in Patent Publication No. 28978 of 1982, which prevents electrostatic damage to silicon wafers and the like or adhesion of dust to silicon wafers due to the above-mentioned frictional charging. This has had a remarkable effect on improving yield and quality.

This invention has been made to make the effect mentioned in -F even more remarkable.It has a simple structure and can uniformly apply drying gas to all silicon wafers, etc., thus achieving a uniform drying state. The purpose of this invention is to provide a draining and drying device that can obtain the desired results and reliably remove static electricity generated on the surface of a silicon wafer or the like.

Corresponding to this purpose, the draining/drying device of the present invention provides a plurality of drying air streams that are located substantially along the rotation center of a rotor that supports the drained and dried object, and each having a different length in the direction of the rotation center. A ventilation passage is formed, the ventilation passage is divided by a bottom rectifying surface made of a plane that is perpendicular to or inclined with respect to the rotation center, and the side facing the drained dry body is It is characterized in that it is open, and the high voltage electrode of the electric type part Ii device is formed protrudingly spaced apart from the open side of the ventilation passage.

Hereinafter, details of the present invention will be explained with reference to the drawings showing one embodiment.

In FIGS. 3 and 4, reference numeral 11 denotes a draining/drying device, and the draining/drying device 11 includes a housing 12. As shown in FIG. Housing 12
A table-shaped rotor 13 is located inside, and a carrier holder 14 is attached to the rotor 13. When draining and drying a wafer, a large number of wafers (not shown) are stored in the carrier holder 14. The rear 15 is firmly supported. A plurality of anti-reflection vanes 16 are arranged on the outside of the rotor 13 and the carrier wheel 14. A lid 17 that can be opened and closed is installed at the upper end of the housing 12, and an intake hole 18 is formed in the lid 17 substantially coaxially with the center of rotation of the rotor 13, and a mesh is stretched over the intake hole 18. There is. A rectifier 21 is attached to the back surface of the lid 17 so as to be substantially concentric with the intake hole 18 .

The rectifier 21 has a lid 17 as shown in FIGS. 5 and 6.
A mounting frame 22 is provided around the periphery of the intake hole 1B formed in the air intake hole 1B, and a dividing plate 23 is fixed to the lower side of the mounting frame 22. The dividing plates 23 are two flat plates that intersect perpendicularly to each other substantially on the central axis of rotation of the rotor 13 to form a cross in a plan view.
Four ventilation passages 24 are formed on the lower side of the frame 22, located substantially along the rotation center axis of the rotor 13, and having open sides facing the drained and dried material.

The vertical walls of the dividing plate 23 forming the two walls of each ventilation passage 24 gradually decrease in width toward the bottom surface of the rotor 13.

Each ventilation passage 24 has a different length, and is mounted on the bottom rectifying surface 24 at a different distance from the frame 22.
These bottom rectifying surfaces 2
The arrangement position combination 5 is such that when the rotor 13 rotates, the drying airflow hits the hair 7A1- set in the carrier holder 14 uniformly at each position in the direction of the rotation center axis of the pull rotor. The bottom rectifying surface 25 is a plane that is perpendicular to or inclined to the central axis of rotation of the rotor, and is a dividing plate when viewed from the side of the ventilation passage 24. 23 and the bottom rectifying surface 25 are obtuse angles, and the bottom rectifying surface 25 is in a state in which it is directed toward the open side facing the drained drying body, and has an adjacent ventilation path 1). The bottom rectifying surfaces are slightly inclined in a direction that reduces the difference in level between them, and serve as guide surfaces that smoothly guide the drying airflow toward the drained drying body.

A static eliminator 25 is attached to the rectifier 21. The static eliminator 25 includes a high voltage electrode and a ground electrode, and generates a cold discharge by applying a high voltage to the high voltage electrode.
It generates positive and negative ions. This high voltage electrode 26 is arranged near the open side of the ventilation passage 24. That is, the static eliminator' support plate 27 is located on the open side near the upper end of the ventilation path 24, and the static eliminator' support plate 27
7 has its both ends perpendicularly crossed by the dividing plate 23 21J! The defrosting device support plate 27 and the bottom rectifying surface 25 are each penetrated by a plurality of holes 28 and 31 along the open side of the ventilation path.
The high-voltage electrode supports 32 are placed in vertically opposing positions at approximately equal intervals in the row, and both ends of the high-voltage electrode supports 32 are inserted into a pair of upper and lower opposed holes 28.31, and fixed at equal intervals in one row. has been done.

The high-voltage electrode support 32 is a hollow tube made of a hard electrically insulating material, and a narrow vertical slit 32a is formed over the entire length of the tube on the side facing the drained and dried body. The high-voltage electrode support 32 is slightly inclined so that the lower part thereof is closer to the rotation axis of the rotor 13 than the upper part.

A high-voltage wiring 33 is housed in the high-voltage electrode support 32, and a plurality of thin needle-shaped high-voltage electrodes 26 connected to the high-voltage wiring 33 are exposed through the slit 32a, with their tips directed toward the drained and dried material. (Exposed in a closed state. High voltage electrode 26
are arranged in a row on the slit 32a with substantially uniform density.

Near the outer side of the row of high-voltage electrode supports 32, that is, near the side near the drained and dried body, rows of a plurality of thin rod-shaped ground electrodes 34 are located parallel to the row of piezo electrode supports 32, The ground electrode 34 of each ventilation passage 24 is connected to the high voltage electrode support 3 of the same ventilation passage.
2, each ground electrode has both ends fixed to the static eliminator support plate 27 and the bottom rectifying surface, and is connected to the ground wire 35. The number of ground electrodes 34 in each ventilation path 24 is one more than the number of high-voltage electrode supports 32, and the high-voltage electrode supports 32 of IIj are arranged at positions equidistant from the two ground electrodes 34, and the drained dry body and The structure is such that the ground electrode does not come in between the high voltage electrode arranged on the high voltage electrode support 32 and become an obstacle to static elimination.

In the draining and drying device 11 configured as described above, silicon wafers and the like as objects to be processed are transported to the wafer carrier \7-1.
5, the cylinders 1 to 1 are placed in the carrier holder 14, and then the lid 17 is closed, the power is turned on, and the rotor 13 is rotated. As the rotor 13 rotates, water droplets adhering to the silicon wafer, etc., are blown to the outside of the rotor 13 by centrifugal force and drained. Water droplets blown to the outside of the rotor 13 are removed by the opposite side prevention blade 16
Since the water droplets are guided to the exhaust port 32 and exit the housing 12, the water droplets are not reflected toward the silicon wafer.

At the same time that the rotor 13 is drained by rotation, the rotation center side of the rotor 13 becomes negative pressure, and clean air or drying gas such as N2 gas is supplied from the outside of the housing 12 to the rotor through the intake hole 18 of the lid 17. The water flows into the rotation center shaft of the carrier support 14 and hits the rotating silicon wafer, thereby drying the silicon wafer after draining water. In this case, a rectifying device 21 is located on the rotation center side of the rotor 13, which rectifies the drying gas flowing therein so that it uniformly hits all the silicon wafers housed in the carrier. The silicon wafers are dried uniformly.

On the other hand, when silicon wafers come into contact with drying gas,
Its surface is charged, but when a voltage is applied to the high voltage electrode 26, it moves toward the ground electrode 34 as shown by the arrow 36.
An electric current is created, which generates positive or negative ions in the dry gas. These ions are carried by the dry gas flow and reach the silicon wafer, where they neutralize and eliminate the electrostatic charges of opposite polarity on the silicon wafer. Therefore, even when the silicon wafer is taken out from the rotor after drying, electrostatic damage will not occur, and there is no risk of dust or the like adhering to the silicon wafer.

As described above, according to the present invention, it is possible to uniformly apply drying gas to all silicon wafers, etc. with a simple structure, thereby achieving a uniform drying state, and moreover, it is possible to prevent static electricity. It is possible to obtain a draining and drying device that can prevent a decrease in product yield and deterioration in quality due to the occurrence of drying.

Note that the above description has mainly focused on silicon wafers as the object to be processed, and therefore the present invention has been applied to an apparatus for draining and drying silicon wafers. It can be applied directly to cover glass for photomasks, lenses, and other thin bodies.

[Brief explanation of drawings]

Figure 1 is a vertical cross-sectional explanatory diagram showing a conventional draining and drying device;
The figure is a cross-sectional view taken along the line ■-■ in FIG. 1. FIG. Top view Figure 5 is a perspective view showing the rectifier, and Figure 6 is a plan view of the rectifier. 2... Housing 3... O-tor 4... Carrier holder 11... Drainer Drying device 12...housing 1
3...Rotor 14 River carrier A7-Holder 15.
・・・Wafer Kitriya 16・・・Anti-reflection blade
17... Lid 18... Intake hole 21... Rectifier 22... Frame for mounting 23... Split plate 24... Ventilation passage 25... Bottom rectifying surface 26... High voltage electrode 2
7... Static eliminator support plate 28... Hole 31... Hole
32...High voltage electrode support 32a...Slit 3
3...High voltage arrangement 34...Grounding electrode 35...Grounding II 36...Arrow patent applicant Masaru Aigo - Department representative Patent attorney Osamu Kawai

Claims (1)

[Claims] A plurality of ventilation passages for drying air are formed, which are located approximately along the rotational axis c11 of the rotor that supports the drained drying body, and each have a different length in the direction of rotation. is defined by a bottom rectifying surface formed by a plane force perpendicular to or inclined with respect to the center of rotation, and the side facing the drained drying body is open, and the high voltage of the electric static eliminator is A draining dryer characterized in that electrodes are formed protrudingly at intervals near the open side portion of the ventilation passage.