JPS6019684B2 - Low power consumption multivibrator - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a low power consumption multipipulator employing C-MOSFETs.

In general, multipipulators include bistable multipipulators (flip-flop circuits), monostable multipipulators, and astable multipipulators, which include frequency divider circuits, arithmetic circuits, memory circuits, waveform shaping circuits, and oscillation circuits. It is used as such.

When the multipipelator circuit utilized in this manner is built into a mobile device such as a crystal wristwatch, it must be used continuously for a long time with a small capacity battery.

In addition, when a large number of circuits are used together, such as in a computer, many multi-pipelator circuits that have various functions as logical operation elements are often used, and each multi-pipelator circuit also consumes energy. Naturally, the total amount of power will be large. Therefore, as described above, reducing the power consumption of the versatile multipipeter itself has an important meaning in reducing the power consumption of electronic equipment. Currently, from the viewpoint of reducing power consumption, a multi-pipe layer constructed of a C-MOSC circuit is being implemented, and this circuit will be explained by taking a bistable multi-pipulator as an example.

In the circuit that has been put into practical use, an additional circuit is provided in the periphery in order to apply a trigger from the outside, and the circuit related to the basic operating principle will be explained with reference to FIG. TP,, TP2 are P-type MOSFETs, and TN. ，
TN2 is an N-type MOSFET, TP, and TN, and TP2 and TN2 are connected in a complementary manner, and each C-
The gates G, , G2 of the MOSFETs are commonly connected, and the drain electrodes D, , D2 are also commonly connected.

Note that S,,9 is the source electrode of P-MOSFETTP,
It is an auxiliary gate, and S,′,g,′ are N-MOSFETs.
This is the source electrode and auxiliary gate of TN. Also S2,g
2 is the source electrode and auxiliary gate of P-MOSFET TP2, and S2' and saddle' are the source electrode and auxiliary gate of N-MOSFET TN2. 1, 12 are input terminals for applying external trigger signals, and C, , C2 are distributed capacitances based on electrode connections or wiring within the circuit, and are not specially connected from the outside. .

Figure 2 shows the channel current IP of this multipipulator.
, IN is shown on the vertical axis and the gate voltage VG is on the axis.

Referring to FIG. 2, the DC bias voltage VG is VthN when the circuit starts operating.VG<(V.-Vth
P) must hold. In other words, a voltage satisfying Vo>VthP+VthN is applied to the circuit as the power supply voltage VD. At this time, if P-MOSFETTP is turned on, then
Voltage V of drain electrode D.

, is approximately the power supply voltage V. Therefore, the voltage VG2 at the gate 2 of the other C-MOSFET pair connected to the drain electrode D is also approximately equal to the power supply voltage Vo. Therefore,
P-MOSFET TP2 is OFF and N-MOSFET is OFF.
N2 is turned ON. M-MOSFETTN2 is O
Since the voltage is N, the voltage V of the source electrode D2. 2 is the ground, that is, almost zero and the bell.

Therefore, the gate G connected to this source electrode D2,
Since the voltage Vc, of P-MOSFETTP is approximately zero,
, is turned ON, and N-MOSFETTN, is turned OFF and maintains this state. Of course, on the other hand, P-MOSFET
TP2 and N-MOS FET TN are turned on, and P
-MOSFETTP, and N-MOSFETTN2 are O
The state of the FF is also stable in exactly the same way, and the current remains briefly cut off.

This state will be called the state of B, and the state of TP and force N described above will be called the state of A. Now, let us consider the case where a trigger is applied externally by some method to the circuit which is stable in the above-mentioned state A to shift it to the stable state B.

In state A, capacitor C2 is charged with approximately the power supply voltage Vo, and charge q2≠C2Vo is stored in this capacitor C2, and the voltage of capacitor C is approximately zero and no charge is stored. When the state B is reached, the capacitor C is charged with approximately the power supply voltage Vo, and the voltage of the capacitor C2 becomes approximately zero and becomes a bell.

Therefore, when moving from state A to state B, charge q,≠C,Vo flows from the power supply and charges capacitor C,
Charge of C2 q2≠C2V. will be discharged to earth. Therefore, if the trigger is applied f times per second and the states A and B are alternately repeated, the current flowing from the power supply is 1, 1, = (C, 10C2) VD x f/2
...m.

That is, the fin gun 8, which flows out from the power supply, is connected to the capacitor C, , C2.
is the current that charges and discharges f/phantom group at the power supply voltage Vo, so
In order to reduce the power consumed by the circuit, it is possible to reduce the values of the capacitors C, C2, or to lower the current voltage Vo.

However, the capacitors C, , C2 are C-M06FE
It is a parameter determined by the structure of T itself, and the power supply voltage V
It is necessary to set o to a value greater than or equal to the value of VthP tv thN, and this Vo is also ultimately determined from the characteristics of the C-MOSFET itself. Therefore, in principle, in the conventional multipipulator circuit as shown in FIG.
It is difficult to reduce power consumption below the power determined by the product of the current given by Equation 1 and the power supply voltage Vo. The present invention has been made in view of the drawbacks of the above-mentioned conventional examples, and the present applicant has already published the "C-MOS circuit" published by Tokiso Sho 52-2233.
It is an object of the present invention to provide a low power consumption multi-pipelator which aims to reduce the power consumption of the multi-pipelator based on the concept of applying individual biases to the gates disclosed in .

An embodiment of the present invention will be described below with reference to FIGS. 3 and 4 of the accompanying drawings.

Note that the same reference numerals as in FIGS. 1 and 2 indicate the same or corresponding parts, and the explanation thereof will be omitted. FIG. 3 is a principle diagram of an example of a circuit of a multipipulator according to the present invention, in which G3, G4
, G5, G6 are P-MOSFETTP, ,N-MO respectively.
SFETTN,. P-MOSFETTP2, N-MOS
This is the gate of FET TN2, and D3, D4, D5, D
Reference numeral 6 indicates drain electrodes corresponding to G3, G4, G5, and G6, respectively.

Further, C3, C4, C5, and C6 indicate the capacitance that each MOSFET has with respect to the ground, and are not connected externally. Tz is a Zener diode or an ordinary diode connected between the drain electrodes 3 and D4 and D5 and D6 of each pair of MOSFETs, and C is connected between the gate of each MOSFET and trigger input terminals 1 and 12. R is the required resistance inserted between the gate and drain electrodes of one pair of MOSFETs and the other pair of MOSFETs.
A DC voltage VD/2 is applied to the circuit shown in FIG.

This V. /2 and the characteristics of each circuit component are set as shown in FIG. That is, when VthP and VthN are the function voltages of P-type and N-type MOSFETs, this V. /2
are set slightly larger than each of these two function voltages, and a Zener diode or an ordinary diode Tz
The function voltage V2 is selected to be slightly smaller than each of VthP and VthN. By determining the power supply voltage and the characteristics of the circuit elements in advance in this way, the voltage applied to the circuit shown in FIG.
Apply a voltage of D/2.

Now, by applying this power supply voltage, P-MOSFET TP
, is ON', the voltage Vo3 of the drain electrode D3 becomes approximately Vo/2, and the voltage Vo3 of the drain electrode D3 becomes approximately Vo/2.
Gate of N-MOSFET TN2 connected to ○
6 voltage VG6 is also approximately VD/2. Therefore, N-MOS
FET TN2 is turned on, and since TN2 is turned on, the voltage of the drain electrode D6 is approximately zero, and is at a level of 1. Since the voltage of the gate G3 connected to this drain electrode D6 becomes approximately zero and becomes a bell, the P-MOS FET Tp is turned ON.
N-MOSFETTN, maintains the OFF state. On the other hand, the voltage of the drain electrode D4 is lower than the voltage of the drain electrode D3 by Vz, so approximately (V).

/2-Vz), and the voltage of the gate G5 connected to this drain electrode D4 also becomes approximately (Vo/2-Vz). As understood from FIG. 4, at this voltage, the P-MO
S FET TP2 is OFF. In addition, the voltage of the drain electrode 5 cannot be higher than the voltage of the drain electrode D6 by more than Vz, so it should be approximately V2, and the voltage of the gate G4 connected to this drain electrode D5 will also be approximately Vz, and the voltage of the drain electrode D6 will be approximately Vz. As can be understood from Figure 4, the N-MOSFET TN is OFF at this voltage. Therefore, if P-MOSFETTP, is ON, inevitably N-M〇SFET TN2 is 〇N, N-M
〇SFET TN, and P-MOSFET TP2 are OFF
It is now in a stable state. This state will be referred to as the A2 state, and conversely, the P-MOSFET TP
2 and N-MOSFET TN, are ON, P-MOS
The state in which FET Tp and N-MOSFET TN2 are OFF is also a stable state for the same reason as explained above, and this state is referred to as the state &. Consider the case where a trigger is applied to a circuit that is stable in state A2 by some method to change it to stable state Z.

In this state, the voltage between the terminals of capacitor C3 is approximately V. /2
So, the voltage between the terminals of capacitor C4 is approximately (Vo/2.Vz
), capacitor C5 is charged at approximately Vz and capacitor C
The voltage between the terminals of 6 is approximately zero bell. If the state of A2 is reversed to the state of & by an external trigger, the voltage between the terminals of each capacitor C3, C4, C5, and C6 will be approximately V2, the predation level, approximately Vo/2, approximately (Vo/2 -Vz)
Changes to The electric charge that flows into the circuit from the power supply when transitioning from the state of this to the state of B2 is the capacitor C5 and the capacitor C5.
Charge to charge 6 = (Vo/2-V2)・(C50C
6), and this charge is charged through P-MOSFET TP2.

Also, the charge q of capacitors C3 and C4 = (V./2-V2)
- (C30C4) is discharged to ground through N-MOSFETTN. Therefore, if the trigger is applied f times per second and the states A2 and B2 are alternately repeated, the current 12 flowing into the circuit from the power supply is 12=(V).

/2-V2)・(C30C40C50C6)xf/2
...'21
becomes. Here, (C30C40C50C6) is the above '
1) It can be regarded as a value comparable to (C, 10C2) shown in formula. ．． As described above, according to one embodiment of the present invention, since each C-MOSFET is individually biased, the power supply voltage can be reduced to about half that of the slave.

Further, since Vz should be selected as large as possible as long as the circuit operates stably, the value of (Vo/2-Vz) can be set very small. That is, if we take the ratio of the currents 1 and 12 flowing into the circuit from the power supply, we get . /． 2≠VD, etc.; V
2 = 3 ---'31.

Therefore, the power P2 consumed by the multipipulator according to the present invention is P2=12xV.

/2=(V./2-V2)・(C30C40C50C6
) Since it is f/2×, it is possible to make it 1/smaller than the conventional example shown in FIG. Although the above embodiment has been described using a bistable multipipelator circuit using C-MOSFET, the same applies to a monostable or astable multipipelator circuit. As described above, according to the multi/player according to the present invention,
In order to turn on and off a circuit that has a threshold voltage, such as a FET, transistor, or diode, which has a minimum voltage for current to flow, it is necessary to change the voltage between a voltage slightly higher and a voltage slightly lower than this threshold voltage. In order to realize this, we separated the gate voltage to reduce the above change to an operable range, thereby reducing the discharge due to voltage changes through the capacitance of the FET electrode. By reducing the current, the power consumption of the circuit can be significantly reduced compared to conventional circuits.

[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a circuit diagram showing the principle of a conventional C-MOSC multi/disable brake; FIG. 2 is a characteristic diagram of the circuit shown in FIG. 1; The figure is a circuit diagram of a low power consumption multipipulator according to the present invention, and FIG. 4 is a characteristic diagram of the circuit shown in FIG. 3. TP,, TF2...P-MOS FET, TN,, TN
2...N-MOS FET, G3, 04, G5, G6・
...Gate, D3, D4, D5, D6...Drain electrode, C3, C4, C6...Distributed capacitance, Vt
hP...P-MOSFET threshold, V ratio N...N-MO
SFET threshold value, Vz... Rectifier element threshold value, Vz...
···Power-supply voltage. Figure 1 Figure 2 Figure 3 Figure 4

Claims (1)

[Claims] 1 P-channel MOSFET and N-channel MOSF
In a multivibrator in which two pairs of C-MOSFETs with ETs connected complementary to each other are connected to a predetermined power source, the gate and drain electrodes of one pair of P-MOSFETs are connected to the drain electrodes and gate of the other pair of N-MOSFETs. and one pair of N-MOSFEs.
The gate and drain electrodes of T are connected to the other pair of P-MOSFs.
connected to the drain electrode and gate of the ET, and connected to the P of each pair.
- A rectifying element is inserted between each drain electrode of the MOSFET and the N-MOSFET in the forward direction from the N channel side to the P channel side, and the value of the power source is set between the drain electrodes of each pair of P-MOSFETs.
The threshold value of the rectifying element is set to be larger than the threshold value of each pair of P-MOSFET and N-MOSFET.
- A low power consumption multivibrator that is set smaller than the MOSFET threshold. 2 P-channel MOSFET and N-channel MOSFET
In a multivibrator in which two pairs of C-MOSFETs with ETs connected complementary to each other are connected to a predetermined power source, the gate and drain electrodes of one pair of P-MOSFETs are connected to the N- of the other pair through a predetermined resistance. The drain electrode and gate of the MOSFET are connected to each other, and the gate and drain electrode of the one pair of N-MOSFET is connected to the drain electrode and gate of the other pair of P-MOSFET through a predetermined resistance. Trigger input terminal of C-MOSFET and each P-MOSFET and N-MOSFET
A cut-off capacitor is inserted between the gates of the P-MOSFET and the N-MOSFET, and a rectifying element is inserted between the drain electrodes of each pair of P-MOSFET and N-MOSFET in the forward direction from the N channel side to the P channel side, and the value of the power supply is for each pair of P-MO
The threshold value of the rectifying element is set to be larger than the threshold value of the SFET and the N-MOSFET, and the threshold value of the rectifying element is set larger than the threshold value of the P-MOSFET of each pair.
and a low power consumption multivibrator configured to be set smaller than the threshold value of the N-MOSFET.