JPS6019158B2 - semiconductor light emitting device - Google Patents
semiconductor light emitting deviceInfo
- Publication number
- JPS6019158B2 JPS6019158B2 JP11724878A JP11724878A JPS6019158B2 JP S6019158 B2 JPS6019158 B2 JP S6019158B2 JP 11724878 A JP11724878 A JP 11724878A JP 11724878 A JP11724878 A JP 11724878A JP S6019158 B2 JPS6019158 B2 JP S6019158B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- emitting device
- light emitting
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
本発明は、発生光を変調して光通信に用いるのに好適な
半導体レーザのよううな半導体発光装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor light emitting device such as a semiconductor laser, which modulates generated light and is suitable for use in optical communication.
通常の半導体レーザに於ける電流1対光出力Lの関係は
第1図の特性線Aに見られる通りである。図に於いて、
電流1,の点で特性線Aが急激に立上つているのは、こ
こが閥値であって発振が開始されていることを示してい
る。図から明らかなように、半導体レーザは発振を開始
する前に既に自然放出光Lを放出している。このような
半導体レーザの実際の光出力に例えばパルス変調をかけ
ようとする場合、変調信号Msを閥値の点までバィァス
して加えると、光出力Wutが図示のように得られる。
ところで、この光出力LoMは、自然放出光L,の成分
がある為、オン・オフ比を大きく採ることができず、雑
音に対する耐性が低く、誤動作し易いものとなる。The relationship between current 1 and optical output L in a typical semiconductor laser is as shown in characteristic line A in FIG. In the figure,
The sudden rise of characteristic line A at the point of current 1 indicates that this is a threshold and oscillation has started. As is clear from the figure, the semiconductor laser has already emitted spontaneous emission light L before starting oscillation. If, for example, pulse modulation is to be applied to the actual optical output of such a semiconductor laser, if the modulation signal Ms is applied with a bias up to the threshold point, the optical output Wut will be obtained as shown in the figure.
By the way, since this optical output LoM includes a component of spontaneous emission light L, it is not possible to have a large on/off ratio, the resistance to noise is low, and malfunctions are likely to occur.
本発明は、閥値電流での自然放出光を殆んど零となし、
光のオン・オフ比が大である半導体発光装置を得られる
ようにするものであり、以下これを詳細に説明する。The present invention reduces spontaneous emission light to almost zero at threshold current,
This makes it possible to obtain a semiconductor light emitting device with a high light on/off ratio, and this will be explained in detail below.
第2図は本発明一実施例の要部側断面図である。FIG. 2 is a side sectional view of a main part of an embodiment of the present invention.
図に於いて、1は基板、2はクラツド層、3は活性層、
4はクラツド層、5はキャップ層、6,7は金属電極、
8は可飽和吸収層をそれぞれ示す。In the figure, 1 is the substrate, 2 is the cladding layer, 3 is the active layer,
4 is a clad layer, 5 is a cap layer, 6 and 7 are metal electrodes,
8 each indicate a saturable absorption layer.
本実施例に於いて最大の特徴とするところは、半導体レ
ーザに於ける光を放出すべき男開面の少なくとも一面に
可飽和吸収層8を形成した点である。The most distinctive feature of this embodiment is that a saturable absorption layer 8 is formed on at least one of the open surfaces of the semiconductor laser from which light is to be emitted.
このようにすると、関値以前の光出力を全で可飽和吸収
層8で吸収させ、第1図に見られる自然放出光L,を殆
んど零に近い値にすることができ、そして、半導体レー
ザが発振開始して光世力が立上ると吸収層8に依る光吸
収は飽和するので、光は外部に放出されるようになる。
従って、その1.L特性は、第1図に見られる特性線B
の通りであり、光のオン・オフ比は極めて良好になり、
雑音の存在で誤動作する操れは無くなる。ところで可飽
和吸収層8の材料としては色ガラスを用いることができ
、それを例えばスパッタ法、CVD(Chemical
VaporDeposition)法を適用して膜状に
形成すれば良い。また、色ガラス以外に光を吸収する半
導体材料を使用することもできるが、それを用いた場合
、発振後の外部効率、即ち、内部発生光量に対する外部
に敬出し可能な光量の比が若干小さくなる。また、可飽
和吸収層8を髪関面に直接形成して問題を生じるような
場合には、例えば、第3図に見られるように、可飽和吸
収層8を例えば二酸化シリンコン層9,10でサンドイ
ッチにした構成にしても良い。In this way, all the light output before the function value can be absorbed by the saturable absorption layer 8, and the spontaneous emission light L, shown in FIG. 1, can be made almost to a value close to zero, and, When the semiconductor laser starts oscillating and the optical power rises, the light absorption by the absorption layer 8 is saturated, so that light is emitted to the outside.
Therefore, part 1. The L characteristic is the characteristic line B seen in Figure 1.
As shown, the light on/off ratio becomes extremely good.
The operation that malfunctions due to the presence of noise is eliminated. By the way, colored glass can be used as the material for the saturable absorption layer 8, and it can be processed by sputtering, CVD (Chemical
It may be formed into a film by applying the vapor deposition method. In addition, it is also possible to use a semiconductor material that absorbs light other than colored glass, but if this is used, the external efficiency after oscillation, that is, the ratio of the amount of light that can be emitted to the outside to the amount of internally generated light, will be slightly smaller. Become. In addition, if forming the saturable absorbent layer 8 directly on the hair surface causes problems, for example, as shown in FIG. It may also be configured as a sandwich.
この場合、二酸化シリコン層9及び可鋼吸収層8のそれ
ぞれの厚さをうければ、それ等各層は等価的に見て形成
していない場合と同様である為、その外側の二酸化シリ
コン層・oの啄みとすれはこ肌反射率を増加させること
になるので、閥値電流の低減させるのにも有効である。In this case, considering the respective thicknesses of the silicon dioxide layer 9 and the steelable absorption layer 8, these layers are equivalently the same as when they are not formed. Since the curvature of o increases the skin reflectance, it is also effective in reducing the threshold current.
この構成に於いて、可飽和吸収層8として半導体材料を
用いる場合、その半導体に於けるバンド内にレベルを作
ったとすると所定波長の光ヱネルギが前記レベルの中間
になるように半導体材料を選び、光照射によって励起さ
れるキャリャがレベルを充満するか否かに依って光の可
飽和吸収を行なわせ得るようにするものである。半導体
は二酸化シリコンよりも屈折率が大であるから、第3図
の構成にした場合、反射率を極めて大きくすることがで
き、理論的には100〔%〕にすることができる。反射
率が大になる程、闇値電流が低くなることは云うもでも
ない。尚、例えば砥化ガリウム(DaAs)層からなる
可飽和吸収層のみの場合に於ける光反射率は30〔%〕
程度である。以上の説明で判るように、本発明に依れば
、半導体レーザの光放出面となる男関面の少なくとも一
方に光の可飽和吸収層を形成してあるので、レーザ発振
を開始する前の自然放出光を殆んど零の状態にすること
ができ、放出光のオン・オフ比を大きくすることが可能
であり、雑音等の影響を受け難い高品質の光通信が可能
になる。In this configuration, when a semiconductor material is used as the saturable absorption layer 8, if a level is created within the band of the semiconductor, the semiconductor material is selected so that the optical energy of a predetermined wavelength is between the levels, This allows saturable absorption of light to occur depending on whether the level is filled with carriers excited by light irradiation. Since a semiconductor has a higher refractive index than silicon dioxide, the structure shown in FIG. 3 can have an extremely high reflectance, theoretically reaching 100%. It goes without saying that the higher the reflectance, the lower the dark value current. Note that, for example, in the case of only a saturable absorption layer made of a gallium abrasive (DaAs) layer, the light reflectance is 30%.
That's about it. As can be seen from the above explanation, according to the present invention, a saturable light absorbing layer is formed on at least one of the male surface, which is the light emitting surface of the semiconductor laser. Spontaneous emission light can be reduced to almost zero, the on/off ratio of emitted light can be increased, and high-quality optical communication that is less susceptible to noise and the like becomes possible.
また、可飽和吸収層を形成したり、或いは、該層をそれ
より低い屈折率を有する物質の層でサンドイッチ構造に
して、男関面に於ける光反射率を向上し、閥値電流を低
減させる等、その特性も改善でき、更には寿命を延長す
ることが可能になる。In addition, by forming a saturable absorbing layer or sandwiching the layer with layers of materials with a lower refractive index, the light reflectance at the male surface is improved and the threshold current is reduced. It is possible to improve its characteristics such as increasing the temperature of the battery, and furthermore, it is possible to extend its life.
第1図は半導体レーザの1・L特性を表わす線図、第2
図は本発明−実施例の要部側断面図、第3図は他の実施
例の要部側断面図である。
図に於いて、1は基板、2はクラツド層、3は活性層、
4はクラッド層、5はキャップ層、6,7は電極、8は
可飽和吸収層である。
第1図
第2図
第3図Figure 1 is a diagram showing the 1·L characteristics of a semiconductor laser;
The figure is a side sectional view of the main part of an embodiment of the present invention, and FIG. 3 is a side sectional view of the main part of another embodiment. In the figure, 1 is the substrate, 2 is the cladding layer, 3 is the active layer,
4 is a cladding layer, 5 is a cap layer, 6 and 7 are electrodes, and 8 is a saturable absorption layer. Figure 1 Figure 2 Figure 3
Claims (1)
始前に発生する自然放出光を吸収する為に形成された光
の可飽和吸収層を有してなることを特徴とする半導体発
光装置。1. A semiconductor light-emitting device comprising a light saturable absorption layer formed on at least one light-emitting surface to absorb spontaneously emitted light generated before the start of laser oscillation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11724878A JPS6019158B2 (en) | 1978-09-22 | 1978-09-22 | semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11724878A JPS6019158B2 (en) | 1978-09-22 | 1978-09-22 | semiconductor light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5543884A JPS5543884A (en) | 1980-03-27 |
JPS6019158B2 true JPS6019158B2 (en) | 1985-05-14 |
Family
ID=14707049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11724878A Expired JPS6019158B2 (en) | 1978-09-22 | 1978-09-22 | semiconductor light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6019158B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6355377U (en) * | 1986-09-29 | 1988-04-13 | ||
JPH02158068A (en) * | 1988-12-12 | 1990-06-18 | Pfu Ltd | Mounting structure of connector |
JPH0515735Y2 (en) * | 1987-10-05 | 1993-04-26 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09167873A (en) * | 1995-12-15 | 1997-06-24 | Mitsubishi Electric Corp | Semiconductor laser device |
JP4935607B2 (en) * | 2007-09-28 | 2012-05-23 | ブラザー工業株式会社 | Image display device |
DE102008012859B4 (en) * | 2007-12-21 | 2023-10-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laser light source with a filter structure |
-
1978
- 1978-09-22 JP JP11724878A patent/JPS6019158B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6355377U (en) * | 1986-09-29 | 1988-04-13 | ||
JPH0515735Y2 (en) * | 1987-10-05 | 1993-04-26 | ||
JPH02158068A (en) * | 1988-12-12 | 1990-06-18 | Pfu Ltd | Mounting structure of connector |
Also Published As
Publication number | Publication date |
---|---|
JPS5543884A (en) | 1980-03-27 |
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