JPS60189283A - Photoelectric device - Google Patents

Abstract

PURPOSE:To obtain the low cost package structure which is suitable for mass production as well as to contrive reduction in manufacturing cost of a semiconductor device by a method wherein a package is formed with a box type ceramic stem and a cap with which the stem will be clocked by performing a sinter molding. CONSTITUTION:A fiber guide 14 made of metal is inserted into the fiber guide hole of a stem 1, a laser chip lead 15 and a light-receiving lead 16 are inserted into a lead inserting hole, and they are sirtightly fixed using a soldering material 17 such as Ag. The fiber guide 14 is formed in stepped cylindrical shape, and the small diameter part of the fiber guide 14 is fitted into the fiber guide hole. The inner end of the lead 15 to be used for a pair of laser chips is positioned on the other end of the wiring layers 12 and 13 located on a laser chip fixing part 7, and they are connected to the other end of the wiring layers 12 and 13 using a soldering material 18 such as solder and the like. Also a ceramic block 19, to be used for supporting of a light-receiving element, is fixed on the metallized layer 10 of a light-receiving element arranged part utilyzing the metallized layer 10.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an optoelectronic device, and more particularly to an optoelectronic device having a built-in light receiving element for monitoring output light, such as a semiconductor laser device serving as a light source of a transmitting device for optical communication.

[Background technology]

As one of the original communication light sources, for example, Hitachi Hyoron,
As shown in Vol. 65, 410 (1983), pages 39 to 44, semiconductor laser devices (laser chips) for optical communication have been developed. This laser chip is assembled as a so-called direct facing method in which the laser beam and the original phaino (which coupling is directly opposed to the laser chip and the original phaino), and the package is box-shaped. This semiconductor laser device has a structure in which the center of the main surface of a metal box-shaped stem is hermetically sealed with a cap made of a metal plate, and the laser chip and A light-receiving element (for example, an InGaAsP P I N photodiode) that detects the optical output of the laser light emitted from the emission surface of the laser chip is built in. Furthermore, the stem has strict dimensional accuracy and is complicated. Therefore, it is formed by cutting a round bar material.

However, the stem of such semiconductor laser devices is manufactured by cutting, but cutting involves high processing costs and low productivity.As a result, it is difficult to reduce the manufacturing cost of semiconductor laser devices. The inventor has revealed that this is difficult to achieve.

[Purpose of the invention]

An object of the present invention is to reduce the manufacturing cost of a semiconductor laser device by providing a package structure that is low in processing cost and suitable for mass production.

The above and other objects and novel features of the present invention include:
It will be clear from the description of this specification and the accompanying drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

That is, in the semiconductor laser device of the present invention, the complex-shaped box-shaped stem in which the laser chip and the light-receiving element are attached and the inner end of the original fiber is fixed is replaced by a ceramic stem that can be produced inexpensively and in large quantities. As a result of using a material formed by sintering, it is possible to reduce the manufacturing cost of a semiconductor laser device.

〔Example〕

FIG. 1 is a perspective view showing a stem in a semiconductor laser device according to an embodiment of the present invention, and FIG. 2 is a perspective view of the semiconductor laser device with a portion removed.

The semiconductor laser device according to this embodiment has a structure as shown in FIG.

Next, the structure of the stem 1 will be explained using FIG. 1, and the structure of the semiconductor laser device and its assembly will be explained using FIG.

As shown in FIG. 1, the stem 1 has a box shape with an open top. This stem 1 is formed by sintering ceramic powder. The main components of the stem 1 are a bottom part 2, a rectangular frame part 3 extending around the periphery of the bottom part 2, and a thin fiber support plate 4 extending on the bottom part 2. A guide hole 5 into which the original fiber can be inserted is provided at the center of the side surface of the fiber support plate 4. Further, a fiber guide hole 6 is provided in a portion of the frame portion 3 facing the guide hole 5. Therefore, the guide hole 5
A line connecting the fiber guide hole 6 and the fiber support plate 4
It is perpendicular to the direction of extension. At the bottom 2 on the extension side of the line connecting the fiber guide hole 6 and the guide hole 5, a laser chip fixing part 7 and a light receiving element mounting part 8 are lined up. The light-receiving element mounting part 8 is one step lower than the laser chip fixing part 7 in order to align the laser chip and the light-receiving element, which will be described later.

Further, a pair of lead insertion holes 9 are provided in the portion of the frame portion 3 facing the fiber guide hole 6 and the portion of the frame portion 3 facing the light receiving element mounting portion 8, respectively.

Leads for laser chips and light receiving elements are inserted into these lead insertion holes 9, respectively. Furthermore, a conductive metallized layer 10 is formed on the upper surfaces of the laser chip fixing part 7, the light receiving element mounting part 8, and the frame part 3. The metallized layer 10 on the upper surface of the frame portion 3 is used for attaching a camp, which will be described later, and is used for attaching a light-receiving element attaching portion 8.
The metallized layer 1O on the upper surface is partially provided for attachment of a light receiving element support block. Further, the metallized layer 10 on the upper surface of the laser chip fixing part 7 has a wiring layer 12 formed with a pad 11 for attaching the laser chip at one end, and a wiring layer 12 whose other end faces the vicinity of the lead insertion hole 9; It is composed of a wiring layer 13 which is close to each other and whose other end faces the vicinity of the lead insertion hole 9.

Next, assembly of the semiconductor laser device will be explained. First, a metal fiber guide 14 is inserted into the fiber guide hole 6 of the stem 1, and a laser chip lead 15 is inserted into the lead insertion hole 9. Insert the lead 16 for the light receiving element, and
Fix it airtight with wax @17 like g. The fiber guide 14 has a stepped cylindrical shape, and its small diameter portion fits into the fiber guide hole 6. The tip of this small diameter portion is cut obliquely to form a slope. In addition, fiber guide 1
The inner diameter of the hole 4 is comprised of a small diameter hole portion and a large diameter hole portion, with the small diameter hole portion being provided in a portion with a narrow outer diameter, and the large diameter hole portion being provided in a portion with a thick outer diameter. The small diameter hole portion is, for example, a hole slightly larger than the original fiber with a cladding diameter of 125 μm, and the large diameter hole portion is a hole into which a fiber cord covering the optical fiber with a jacket or the like is inserted.

On the other hand, the inner ends of the pair of laser chip leads 15 are
Both wiring layers 12.1 are located on the other ends of both wiring layers 12.
It is connected to the other end of 3.

Further, on the metallized layer 10 of the light receiving element placement section 8, a block 19 for supporting the light receiving element made of ceramic is fixed using the metallized layer 10. This block 19 is provided with wiring layers 20 and 21 consisting of two mutually independent metallized layers extending from the side surface to the top surface. and a pair of the leads 16 for the light receiving element.
The inner ends of the wiring layers 20 are connected to each other through a brazing material 22 such as solder.
．． It is fixed to the end of the upper surface of 21. Furthermore, a light receiving element 23 is fixed to a side surface end portion of the wiring layer 20 located on a side surface of the block 19. And this light receiving element 2
The upper electrode of 3 and the side edge of the other wiring layer 21 located on the side surface of the block 19 are connected by a wire 24 .

Note that the block 19 has a light receiving element 23. The wire 24 is attached, and then inserted and fixed between the metallized layer 10 of the light receiving element arrangement portion 8 and the inner end of the lead 16 for the light receiving element.

On the other hand, on the pad 11 of the wiring layer 12 of the laser chip fixing section 7, a submount 26 having a laser chip 25 fixed thereon is fixed via a brazing material 27 such as solder. Further, the electrode on the upper surface of the laser chip 25 and the inner end of the wiring layer 13 are connected by a wire 28.

Therefore, next, the fiber cord 29 is inserted into the fiber guide 14. At the tip of this fiber cord 29, the jacket etc. are removed and the optical fiber 30 is exposed. As a result, the original fiber 30 protrudes from the small diameter hole of the fiber guide 14, passes through the guide hole 5 of the fiber support plate 4, and passes through the laser chip 2 on the submount 26.
5. Its tip faces one exit surface. Further, solder 31 (
Although not limited to solder, adhesives that deteriorate or emit gas are not preferred because they deteriorate device characteristics. ) is attached and the optical fiber 30 is fixed, and the fiber guide 14 and the original fiber 30 are fixed in an airtight manner.

Next, the laser chip 25 is made to emit light, and the original fiber 30 is
The original axes of the original fiber 30 and the laser chip 25 are aligned by using the hardening of the bonding material 32 filled in the guide hole 5 while monitoring the optical output taken into the optical fiber.

Next, a cap 33 made of a metal plate or a ceramic plate is hermetically fixed to the upper surface of the stem 1 with a brazing material 34 such as solder, thereby manufacturing a semiconductor laser device as shown in FIG. 2.

〔effect〕

1. In the semiconductor laser device of the present invention, both the stem 1 and the cap 33 constituting the package are suitable for mass production and have low processing costs. That is, although the stem 1 has a complex structure and requires high dimensional accuracy, it can be manufactured in large quantities at low cost because it is formed by a ceramic sintering mold that satisfies these requirements. .

Further, the cap 33 can be manufactured by similar ceramic molding or pressing, which is excellent in mass productivity and has low processing costs. Therefore, according to the present invention, it is possible to reduce the manufacturing cost of a semiconductor laser device.

2. According to the present invention, since the stem structure can be freely changed by changing the molding, a desired package structure can be freely selected, and the package can be optimally designed.

Although the invention made by the present inventor has been specifically explained based on Examples above, the present invention is not limited to the above Examples (although it is possible to make various changes without departing from the gist of the invention). (1゜ [Field of Application] In the above explanation, the invention made by the present inventor was mainly applied to the field of application which is the background thereof, which is optical communication technology using semiconductor lasers. However, the present invention is not limited to this. For example, optical communication technology that incorporates edge-emitting light emitting diodes instead of semiconductor lasers, optoelectronic devices that combine light emitting elements such as light emitting diodes and laser nappies with original fibers, and even ceramic stems and The present invention can be applied to technologies such as optoelectronic devices in which a light emitting element is incorporated in a package consisting of a transparent cap.

[Brief explanation of the drawing]

FIG. 1 is a perspective view showing a stem in a semiconductor laser device according to an embodiment of the present invention, and FIG. 2 is a perspective view of the same semiconductor laser device (with a portion removed). 1. Stem, 2.・Bottom, 3... Frame, 4...
- Fiber support plate, 5... Guide hole, 6... Fiber guide hole, 7... Laser chip semi-fixed part, 8... Light receiving element mounting part, 9... Lead insertion hole, 10...・Metallization layer, 11... Pad, 12... Wiring layer, 13
...Wiring layer, 14...Fiber guide, ]5...
Lead for laser chip, 16... lead for light receiving element,
17... Brazing metal, 18... Brazing metal, 19... Block, 20... Wiring layer, 21... Wiring layer, 22...
- Brazing metal, 23... Light receiving element, 24... Wire, 2
5... Laser chip, 26... Submount, 27
... Brazing metal, 28 ... Wire, 29 ... Fiber cord, 30 ... Original fiber, 31 ... Solder, 3
2... Bonding material, 33... Cap, 34... Brazing material. , ＼ Agent Patent Attorney Akio Takahashi '1, No. 1 Figure 2

Claims (1)

[Claims] 1. An optoelectronic device having a box-shaped package, a light emitting element disposed inside the package, and an optical fiber that takes in light emitted from the light emitting element and transmits the light outside the package. 1. An optoelectronic device characterized in that the package is formed by a sintered ceramic box-shaped stem and a cap closing the stem. 2. The optoelectronic device according to claim 1, wherein the package includes a built-in light receiving element for detecting the output of light emitted from the light emitting element.