JPS6018910A - Fabrication of ion_implanted bubble element - Google Patents
Fabrication of ion_implanted bubble elementInfo
- Publication number
- JPS6018910A JPS6018910A JP58126716A JP12671683A JPS6018910A JP S6018910 A JPS6018910 A JP S6018910A JP 58126716 A JP58126716 A JP 58126716A JP 12671683 A JP12671683 A JP 12671683A JP S6018910 A JPS6018910 A JP S6018910A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- implanted
- annealing
- magnetic garnet
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
本発明はイオン注入バブル素子の製造方法に関するもの
である。イオン注入バブル素子は、連珠状に連続したパ
ターンを金などのマスク材にて形成したのち、水素、ヘ
リウムなどのイオン注入を行ない、マスクで覆われてい
ない部分の格子定数を増加させ、当初は膜面に垂直の方
向をむいていた磁化を磁歪効果などにより面内にむける
ことにより、該イオン注入層にチャージドウオールを形
成することによりバブルを転送させる、高密度ノくプル
素子である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing an ion implantation bubble device. Ion-implanted bubble devices are made by forming a continuous beaded pattern using a mask material such as gold, and then implanting ions such as hydrogen or helium to increase the lattice constant in the areas not covered by the mask. This is a high-density knock-pull element that transfers bubbles by forming a charged wall in the ion-implanted layer by directing the magnetization that was perpendicular to the film surface in the plane by magnetostriction or the like.
イオン注入バブル素子の問題点は、微小ノくプル径の材
料に対してはイオン注入によって生じさせるべき異方性
磁場の変化（ΔＨｋ）が非常に大きいため、多量にイオ
ン注入する必要がち９、そのとき、イオン注入層は同時
にイオン注入による欠陥のため、結晶的、磁気的に破壊
されることである。The problem with ion-implanted bubble devices is that the change in anisotropic magnetic field (ΔHk) that must be produced by ion implantation is very large for materials with minute bubble diameters, so a large amount of ions must be implanted9. At that time, the ion-implanted layer is simultaneously destroyed crystallically and magnetically due to defects caused by the ion implantation.
この問題点を解決する方法として、イオン注入量として
水素イオンを用い、かつ注入後２００℃から４５０℃程
度でアニールする際に、ＬＰＢ膜金８ｉ０２その他の膜
でカバーしてアニール することＫより、特異的にΔＩ
（ｋ を大きくたもつことができることが知られている
。しかしながら水素イオン注入の場合には注入量が、他
のイオン種の場合より１０倍程度多く必要であるために
、注入に長時間を要するという製造技術上の問題点があ
った。またカバーとして用いる膜の膜質などによゆ転送
路欠陥が生じやすいなどの問題点があった。A method to solve this problem is to use hydrogen ions as the ion implantation amount, and cover the annealing with LPB film gold 8i02 or other film when annealing at 200 to 450 °C after implantation. specifically ΔI
(It is known that it is possible to maintain a large k value. However, in the case of hydrogen ion implantation, the implantation dose is about 10 times higher than in the case of other ion species, so the implantation takes a long time. There were also problems in manufacturing technology, such as the tendency for transfer path defects to occur due to the quality of the film used as the cover.
本発明は、前記従来の欠点を解決する△Ｈｋ の ゛大
＠痕１７注入層０彎成方法を与えれ０ズあ ２る。すな
わち、本発明は、イオン注入された磁性ガーネット膜を
、水素雰囲気中にてアニールする工程を有するイオン注
入バブル素子の製造方法である。The present invention provides a method for forming a large injection layer of ΔHk that solves the above-mentioned drawbacks of the conventional method. That is, the present invention is a method for manufacturing an ion-implanted bubble device, which includes a step of annealing an ion-implanted magnetic garnet film in a hydrogen atmosphere.
以下実施例により詳細に説明する。This will be explained in detail below using examples.
実施例１
０．５μｎ１バブルイオン注入素子用のｌ＝ｏ、ＯＧμ
ｍ１４πＭｓ＝＝１４０００．Ｈｌｃ−＝２８００（Ｊ
ｅなる磁気特性を有する。（Ｓｍ、ＬｕＢｉＣａ）３（
Ｆｅ８ｉ）′５０１２ＬＰＥ膜に、ヘリウムイオンを用
いて、７０ＫｅＶ、５．６ Ｘ １０”’１０ｍ２＋３
０’ＫｅＶ、ｌ’、ＯＸ １０１５／ｌ）ｍ２の２重注
入を行った。つぎに、水素雰囲気中２５０℃で１時間の
アニールを行った。次表に示すように、従来の大気中で
のアニールよりも７５００ｅ大゛きなΔＨｋが得られ、
これによりバブルの転送が可能となった。これに対し従
来のヘリウムイオン注入、大気中アニールではΔＨｋが
小さいためバブルは転送できなかった。Example 1 l=o, OGμ for 0.5μn1 bubble ion implantation element
m14πMs==14000. Hlc-=2800(J
It has a magnetic property of e. (Sm, LuBiCa)3(
Fe8i)'5012LPE membrane using helium ions, 70KeV, 5.6 X 10"'10m2+3
A double injection of 0'KeV, l', OX 1015/l) m2 was performed. Next, annealing was performed at 250° C. for 1 hour in a hydrogen atmosphere. As shown in the following table, a ΔHk that is 7500e larger than that of conventional annealing in the atmosphere is obtained.
This made bubble transfer possible. On the other hand, in conventional helium ion implantation and atmospheric annealing, bubbles could not be transferred because ΔHk was small.
実施例２
０．５μｍバブルイオン注入素子用の実施例と同一磁気
特性の（８ｍＬｕＢｉＣａ）３（Ｆｅ８ｉ）５０１２Ｌ
ＰＨ膜に、Ｈ２を用いて６ ＱＫｅＶ、 ４．ＯＸ １
０ ／ａｎ２＋ ３０ＫｅＶ、 １．６ Ｘ １０１６
／ａｎ”（Ｄ ２ Ｍ注入”ｋ行った。次に、水素雰囲
気中２５０℃で１時間のアニールを行った。次表に示す
ように、従来の大気中でのアニールと比較して、７２０
０ｅ、犬きな。Example 2 (8mLLuBiCa)3(Fe8i)5012L with the same magnetic properties as the example for 0.5 μm bubble ion implantation element
6 QKeV using H2 on the PH film, 4. OX1
0 /an2+ 30KeV, 1.6 X 1016
/an'' (D 2 M implantation''k).Next, annealing was performed at 250°C for 1 hour in a hydrogen atmosphere.As shown in the following table, compared to the conventional annealing in air, the
0e, dog.
ΔＨｋが得られ・、とれにより最小駆動磁界が低下した
。ΔHk was obtained, and the minimum driving magnetic field decreased due to cracking.
オン注入量が水素イオンであるなしにかかわらず水素雰
囲気中のアニールを行うことにより特異的に大きなΔｌ
−１ｋが得られるという新しい事実にもとづくものであ
る。Regardless of whether the amount of on-implantation is hydrogen ions or not, annealing in a hydrogen atmosphere results in a uniquely large Δl.
It is based on the new fact that -1k can be obtained.
とれは、イオン注入層では水素に対する拡散係数が大き
く、雰囲気中の水素がイオン注入層に侵入し、水素注入
の場合と同様の効果を示すようになると考えられる。こ
の方法ではイオン注入量として注入時間が水素よりも短
いヘリウムなどを用いることができ、イオン注入量とし
て水素を用いた場合でも同一の△Ｈｋを得るために必要
な注入量が少なくてよいため注入時間が短縮される。ま
た、イオン注入後のアニールプロセスとして実行すれば
よく、カバー用の膜などを用いΣ必要がないため、欠陥
、アニールむら等を生ずることもなく、また多数ウェー
ハの同時処理が可能で、バブル素子製造上、多大な効果
がある。This is thought to be because the ion implantation layer has a large diffusion coefficient for hydrogen, and hydrogen in the atmosphere enters the ion implantation layer, resulting in the same effect as in the case of hydrogen implantation. In this method, helium, etc., can be used as the ion implantation amount, and the implantation time is shorter than that of hydrogen. Time is reduced. In addition, it can be carried out as an annealing process after ion implantation, and there is no need to use a cover film, etc., so there are no defects or uneven annealing, and multiple wafers can be processed simultaneously. This has a great effect on manufacturing.
Claims (1)
性ガーネット膜にイオン注入により転送路を形成するイ
オン注入バブル素子の製造方法において、イオン注入さ
れた磁性ガーネット膜を、水素雰囲気中にてアニ−／ｌ
／する工程を有することを特徴とするイオン注入バブル
素子の製造方法。In a method for manufacturing an ion-implanted bubble device in which a transfer path is formed by ion implantation in a magnetic garnet film epitaxially grown on a non-magnetic garnet substrate, the ion-implanted magnetic garnet film is annealed in a hydrogen atmosphere.
1. A method for manufacturing an ion implantation bubble device, comprising the steps of: /.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58126716A JPS6018910A (en) | 1983-07-12 | 1983-07-12 | Fabrication of ion_implanted bubble element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58126716A JPS6018910A (en) | 1983-07-12 | 1983-07-12 | Fabrication of ion_implanted bubble element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6018910A true JPS6018910A (en) | 1985-01-31 |
Family
ID=14942094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58126716A Pending JPS6018910A (en) | 1983-07-12 | 1983-07-12 | Fabrication of ion_implanted bubble element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6018910A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4711694A (en) * | 1984-11-12 | 1987-12-08 | Commissariat A L'energie Atomique | Process for producing a layer having a high magnetic anisotropy in a ferrimagnetic garnet |
-
1983
- 1983-07-12 JP JP58126716A patent/JPS6018910A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4711694A (en) * | 1984-11-12 | 1987-12-08 | Commissariat A L'energie Atomique | Process for producing a layer having a high magnetic anisotropy in a ferrimagnetic garnet |
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