JPS60184670A - Formation of oxide film - Google Patents
Formation of oxide filmInfo
- Publication number
- JPS60184670A JPS60184670A JP59039942A JP3994284A JPS60184670A JP S60184670 A JPS60184670 A JP S60184670A JP 59039942 A JP59039942 A JP 59039942A JP 3994284 A JP3994284 A JP 3994284A JP S60184670 A JPS60184670 A JP S60184670A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon substrate
- oxygen
- gaseous
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
Abstract
Description
【発明の詳細な説明】
本発明はシリコンＪｊ（板の表面に酸化膜を形成する方
法、特に酸素または酸化窒素をシリコンＪ、（板の表面
に接触させることにより酸化膜を形成ターる方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of forming an oxide film on the surface of a silicon Jj (plate), and particularly to a method of forming an oxide film by bringing oxygen or nitrogen oxide into contact with the surface of a silicon Jj (plate). .
従来、シリコン基板の表面に酸化膜を形成ターる方法の
１つとしていわゆる熱酸化法が知られている。この方法
は高温たとえば８０ （１”Ｃで乾燥した酸素または酸
化窒素をシリコン基板に接触させる、あるいは微暇の乾
燥した塩化水素を混合した酸素等を接触させる方法であ
って、酸化膜の形成速度が低いという欠点がある。たと
えば、乾燥した酸素を８００℃で３０分間接触させて得
られる酸化膜の厚さは、５０Ａ程度に過ぎない。Conventionally, a so-called thermal oxidation method is known as one of the methods for forming an oxide film on the surface of a silicon substrate. This method involves contacting the silicon substrate with oxygen or nitrogen oxide dried at a high temperature, e.g. For example, the thickness of an oxide film obtained by contacting with dry oxygen at 800° C. for 30 minutes is only about 50 Å.
本発明の目的は酸化膜の形成速度が１１１ｊい、シリコ
ン基板の表面に酸化膜を形成するノｊ法を提供すること
にある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for forming an oxide film on the surface of a silicon substrate with a high oxide film formation rate.
本発明は酸素源とフッ素源との混合物を（）・−１３０
０℃でシリコン基板の表面に接触させる、ことを’１．
） 徴とするシリコン基板の表面に酸化膜を形成する方
法に係る。The present invention provides a mixture of an oxygen source and a fluorine source at ()・-130
'1. Contacting the surface of the silicon substrate at 0°C.
) This relates to a method of forming an oxide film on the surface of a silicon substrate.
本発明の方法によれば酸化膜の形成速度を者しく高くす
ることができる。たとえば、三フッ化窒素を５０１）
１１ ｍ含有する酸素−三フッ化窒素混合気体を８ ＋
１１１ ℃で：（０分間シリコン基板の表面に接触さ−
１圭て得られる酸化膜の厚さは、４００Ａにも達する。According to the method of the present invention, the rate of formation of an oxide film can be significantly increased. For example, nitrogen trifluoride (501)
Oxygen-nitrogen trifluoride mixed gas containing 11 m
At 111 °C: (Touched the surface of the silicon substrate for 0 minutes)
The thickness of the oxide film obtained after one step reaches 400A.
本発明の応用例を挙げると従来所望の厚さの酸化膜を短
時間で形成するには、形成速度を上げるため、接触温度
を１ｒ４温に、例えば１０００℃を越える温度にする方
法が取られていたが、本発明を利用すると、接触温度を
低温にして、例えば１０００℃以下の温度にして相当短
時間で所望の厚さの酸化膜を形成することが可能である
。従って１０００℃を越える温度で処理することが大き
な障害となる、現今要望されているウェハー径の増大化
、素子の微細化、浅い接合なども、本発明の利用により
実現することができる。To give an example of an application of the present invention, conventionally, in order to form an oxide film of a desired thickness in a short time, a method was used in which the contact temperature was set to 1r4 temperature, for example, a temperature exceeding 1000°C, in order to increase the formation speed. However, by utilizing the present invention, it is possible to lower the contact temperature to, for example, 1000° C. or lower and form an oxide film of a desired thickness in a fairly short time. Therefore, by utilizing the present invention, it is possible to realize the presently desired increases in wafer diameter, miniaturization of elements, shallow bonding, etc., for which processing at temperatures exceeding 1000° C. is a major obstacle.
本発明において酸素源とは、酸素または酸素を発生する
気体化合物をいう。たとえば、酸素、亜酸化窒素、二酸
化窒素、−酸化窒素等が挙げられ、特に酸素が好ましい
。In the present invention, the oxygen source refers to oxygen or a gaseous compound that generates oxygen. Examples include oxygen, nitrous oxide, nitrogen dioxide, -nitrogen oxide, etc., with oxygen being particularly preferred.
フッ素源とは、元素フッ素または高温で７ツ累を発生す
る気体化合物をいう。たとえば、元素７ツ素、三フッ化
窒素、フッ化水素等が挙げられるが、特に三フッ化窒素
が好ましい。Fluorine source refers to elemental fluorine or a gaseous compound that generates fluorine at high temperatures. Examples include elemental heptadium, nitrogen trifluoride, hydrogen fluoride, and the like, with nitrogen trifluoride being particularly preferred.
本発明では上記酸素源とフッ素源の混合物をシリコン基
板の表面に接触させる。混合物中のフッ素源の含有量は
２容積ｐｐｍ以上で酸化膜の形成速度の増大効果が認め
られ、１０ （ｌ ＯＯｐ ｐ ｍを超えると却って増
大効果が認められなくなる。 好ましい範囲は５〜５０
００ｐｐｍである。In the present invention, the mixture of the oxygen source and fluorine source is brought into contact with the surface of the silicon substrate. When the content of the fluorine source in the mixture is 2 ppm or more by volume, an effect of increasing the formation rate of the oxide film is observed, and when it exceeds 10 (l OOp p m), the increasing effect is no longer observed. The preferable range is 5 to 50.
00 ppm.
シリコン基板は室温でも酸化され、熱酸化法は１３００
℃までの温度で行われる。従って接触温度はく）〜１３
００°Ｃが好ましく、特に４００〜１０００℃が好まし
い。また上記混合物の接触圧力は特に制限がなく、通常
は０ 、５〜ン気圧の範囲が好ましい。Silicon substrates can be oxidized even at room temperature, and the thermal oxidation method
It is carried out at temperatures up to ℃. Therefore, the contact temperature is ~13
00°C is preferred, particularly 400-1000°C. Further, the contact pressure of the above mixture is not particularly limited, and is usually preferably in the range of 0.5 to 1000 psi.
以１ζに実施例及び比較例を挙げる。Examples and comparative examples are listed below.
実施例１
１Ｉ型、比抵抗２．５〜：ｉ、５Ω”ｃＩｎのシリコニ
４板（＋ ００ ）而を８００ ”Ｃに加熱し、旧：３
〃スを１５（）■）「０混入した乾燥酸素ガス雰囲気中
で：）０分間酸化した。Example 1 Four silicone plates (+00) of type 1I, specific resistance 2.5~:i, 5Ω"cIn were heated to 800"C, and
The sample was oxidized for 15 minutes in a dry oxygen gas atmosphere containing 0 minutes.
得られた試料の酸化膜のＩＶさをエリプソメトリにより
測定し７だところ４ （１ｔｌ Ａであった。The IV of the oxide film of the obtained sample was measured by ellipsometry and was 4 (1 tl A).
比較例１
ＮＦ、ガスを混入しなかったほかは実施例１と同様にｈ
＝＞たと、−ろ、酸化１１Ｑの厚さは４【５Δぐあった
、。Comparative Example 1 Same as Example 1 except that NF and gas were not mixed.
=>The thickness of the oxidized 11Q was 4[5Δ].
実施例２
旧・ｌガスを１０１叩Ｉｌｌ市、大した酸素ガス雰囲気
中で打−〕だ以外は実施例１と同様にして実験したとこ
ろ、酸比１１．’Ｊの厚さは７５Ａて゛あ−）だ。Example 2 An experiment was carried out in the same manner as in Example 1, except that the acid ratio was 11.1%, except that the acid ratio was 11%. The thickness of 'J is 75A.
実施例；（
旧、力スを２０ Ｆｌ旧１１１１混入した酸素ガス雰囲
気１１１で（ｊ＝）／こ１．Ｊ、外は実施例１と同様に
して実験したところ、酸化膜の厚さは３２５λであった
。Example: (An experiment was conducted in the same manner as in Example 1, with the exception of 1.J in an oxygen gas atmosphere 111 mixed with 20 Fl old 1111 of old force, and the thickness of the oxide film was 325λ Met.
実施例４
シリコン基板面を７００℃に加熱し、ＮＦ３ｙスを５０
ｐｐ＋ａ混入した酸素ガス雰囲気中で２（時間酸化した
以外は実施例１と同様にして酸化膜の厚さを測定したと
ころ１００Ａであった。Example 4 The silicon substrate surface was heated to 700°C, and NF3ys was added at 50°C.
The thickness of the oxide film was measured in the same manner as in Example 1, except that the oxidation was carried out for 2 hours in an oxygen gas atmosphere containing pp+a, and the thickness was 100 A.
（以」二）
特訪出願人 ダイキン工業株式会社
代 理 人 弁理士 ｔｌ、Ｉ 村 オ（（手続補正書
１発２）
特許庁長官 若 杉 和 夫 殿
１、事件の表示 、、’；ｒ’−ｐｑ、、’、〜２昭ｉ
１１５９年３月１日提出の特許１鎮（２）２、発明の名
称
酸化膜の形成方法
３、補正をする者
事件との関係 特許出願人
（２８５）ダイキン工業株式会社
・１６代理人
自 発
６、 補正によシ増加する発明の数
７、補正の対象 「特許請求の範囲」及び「発明の詳細
な説明」の項
補正の内容
１、特許請求の範囲を別紙の通り訂正します。(hereinafter referred to as ``2'') Special Visiting Applicant Daikin Industries, Ltd. Agent Patent Attorney TL, Imura O ((Procedural Amendment 1 and 2) Commissioner of the Patent Office Kazuo Wakasugi 1, Indication of the Case ,';r '-pq,,',~2昭i
Patent 1 submitted on March 1, 1159 (2) 2, Name of the invention Method for forming an oxide film 3, Relationship with the case of the person making the amendment Patent applicant (285) Daikin Industries, Ltd. 16 Spontaneous by the agent 6. Number of inventions increased by amendment 7. Subject of the amendment Contents of amendment in the "Scope of Claims" and "Detailed Description of the Invention" 1. The scope of the claims will be corrected as shown in the attached sheet.
２、明細書第４頁第１２行ｒ１００００ｐ、請］とある
をｒｌｏｏｏｏｏｐｐｍＪと訂正します。2. Correct the statement page 4 line 12 r10000p of the specification to rloooooppmJ.
（以 上）
特許請求の範囲
（１）酸素源とフッ素源との混合物を（）〜１３００℃
でシリコン基板の表面に接触させることを特徴とするシ
リコン基板の表面に酸化膜を形成する方法。(Above) Claims (1) A mixture of an oxygen source and a fluorine source is heated at () to 1300°C.
A method for forming an oxide film on the surface of a silicon substrate, the method comprising: bringing the oxide film into contact with the surface of the silicon substrate.
（２）７ツ素源が三フッ化窒素、元素フッ素またはフッ
化水素である請求の範囲第１項に記載の方法。(2) The method according to claim 1, wherein the source of 7 elements is nitrogen trifluoride, elemental fluorine, or hydrogen fluoride.
（３）酸素源が酸素、亜酸化窒素、二酸化窒素または一
酸化窒素である請求の範囲第１項に記載の方法。(3) The method according to claim 1, wherein the oxygen source is oxygen, nitrous oxide, nitrogen dioxide, or nitric oxide.
（４） 混合物中のフッ素源の含有量が２〜１００００
０容積ｐ １＋ ｍである請求の範囲第１項に記載のノ
ｊ法。(4) The content of the fluorine source in the mixture is 2 to 10,000.
The method according to claim 1, wherein the volume p 1+ m is 0.
（５）接触温度が４００〜１０００℃である請求の範囲
第１項に記載の方法。(5) The method according to claim 1, wherein the contact temperature is 400 to 1000°C.
（６） 混合物の接触圧力が０．５〜２気圧である請求
の範囲第１項に記載の方法。(6) The method according to claim 1, wherein the contact pressure of the mixture is 0.5 to 2 atmospheres.
Claims (1)
（１’Ｃでシリコンノル板の表面に接触させることを
特像とするシリコンＪ、（扱の表面に酸化膜を形成する
方法。 （２）フッ素）ｈ：！が・、フッ化窒素、丸木７ツ索ま
たは７ツ比水素Ｃある請求の範囲第１ＪＶｔに記載のノ
ｊ法。 （：（） 酸−（’： ｆ’ｓ！が酸素、中１酸化窒素
、 、酸化窒素または 酸化窒素である。請求の範囲第
＋ Ｊ（【に記載の〕ｊ法。 （４）混合物中の７ツ素）ｂにの含有酸が２〜＋ ００
００容４ｒｉ １＋ １＋ Ｉｌｌである請求の範囲第
１項に記載の方法。 （５）接触温度が４＋１０−１０（１（１℃である請求
の範囲第１項に記載の〕ｊ法、。 （６）山°、今物の接触圧力が０．５〜２気圧である請
求の範囲第１」１°（に記載の方法。[Claims] (1) A mixture of an oxygen source and a seven element source C).l: 10
(Silicon J, which is characterized by contacting with the surface of a silicon plate at 1'C, (method of forming an oxide film on the surface of the handle. (2) Fluorine) h:!, Nitrogen fluoride, round wood The method according to claim 1 JVt in which 7-chain or 7-specific hydrogen C is present. Claim No. +J (method j described in [.
00 volume 4ri 1+ 1+ Ill. (5) J method according to claim 1, where the contact temperature is 4+10-10 (1°C). (6) The contact pressure of the product is 0.5 to 2 atm. A method according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59039942A JPS60184670A (en) | 1984-03-01 | 1984-03-01 | Formation of oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59039942A JPS60184670A (en) | 1984-03-01 | 1984-03-01 | Formation of oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60184670A true JPS60184670A (en) | 1985-09-20 |
Family
ID=12567004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59039942A Pending JPS60184670A (en) | 1984-03-01 | 1984-03-01 | Formation of oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60184670A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08162448A (en) * | 1994-12-06 | 1996-06-21 | Handotai Process Kenkyusho:Kk | Film forming method |
| JP2000091577A (en) * | 1998-08-26 | 2000-03-31 | Texas Instr Inc <Ti> | Method of forming game oxide film |
-
1984
- 1984-03-01 JP JP59039942A patent/JPS60184670A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08162448A (en) * | 1994-12-06 | 1996-06-21 | Handotai Process Kenkyusho:Kk | Film forming method |
| JP2000091577A (en) * | 1998-08-26 | 2000-03-31 | Texas Instr Inc <Ti> | Method of forming game oxide film |
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