JPS60176969A - Manufacture of plzt - Google Patents

Manufacture of plzt

Info

Publication number
JPS60176969A
JPS60176969A JP59032479A JP3247984A JPS60176969A JP S60176969 A JPS60176969 A JP S60176969A JP 59032479 A JP59032479 A JP 59032479A JP 3247984 A JP3247984 A JP 3247984A JP S60176969 A JPS60176969 A JP S60176969A
Authority
JP
Japan
Prior art keywords
plzt
sintering
pbo
mgo
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59032479A
Other languages
Japanese (ja)
Inventor
木内 規博
力 冨永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP59032479A priority Critical patent/JPS60176969A/en
Publication of JPS60176969A publication Critical patent/JPS60176969A/en
Pending legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は、pLZTの製造方法に関する。[Detailed description of the invention] The present invention relates to a method for producing pLZT.

光シャーター素子、光変調素子、透明ブザー。Optical shatter element, light modulation element, transparent buzzer.

透明スピーカ等に使用されるPLZTの製造方法には種
々あるが1例えばつぎの方法等が行われている。
There are various methods for manufacturing PLZT used in transparent speakers and the like, and one example of the method used is as follows.

即ち、ホットプレス法、PbO雰囲気焼成法。Namely, hot press method, PbO atmosphere firing method.

熱間静水圧焼成法である。This is a hot isostatic firing method.

ホットプレス法では1合成した原料粉末を造粒後2円柱
状に200〜5001の圧力でプレス成形する。次に成
形した粉体をAI、O,のホットプレス用型に入れ、そ
の周囲に離型剤である粗粒度のAl2O,粉末を充填し
、加圧焼成される。
In the hot press method, 1 synthesized raw material powder is granulated and then press-molded into 2 cylindrical shapes at a pressure of 200 to 500 mm. Next, the molded powder is placed in an AI, O, hot press mold, and the mold is filled with coarse-grained Al2O powder as a mold release agent, and fired under pressure.

またPI)O雰囲気焼成法では、成型されたPI、ZT
をAl2O3ルツボ内に置きその外側にAl、O,を包
むように置きその外側にPbZr0B + PbO2の
粉末を充填し、さらにその外側に密着してA1□0.の
カバーをし、これを大きなA1!03のルツボに入れ。
In addition, in the PI)O atmosphere firing method, the molded PI, ZT
was placed in an Al2O3 crucible, and the outside of the crucible was filled with PbZr0B + PbO2 powder, and A1□0. Cover it and put it in a large A1!03 crucible.

該ルツボと前記Al、O,カバーの間に酸素を通し焼結
する方法である。
This is a method in which oxygen is passed between the crucible and the Al, O, and cover for sintering.

また、熱間静水圧焼成法では、高圧ガスを用いてPLZ
Tに等方性の圧力を加え、同時に加熱処理が行われる。
In addition, in the hot isostatic pressure firing method, PLZ is heated using high pressure gas.
Isotropic pressure is applied to T, and heat treatment is performed at the same time.

以上の従来技術において、A、120.の耐大物を用い
るホットプレス法、PbO雰囲気焼成法ではAl2O3
がpboを吸収し易<、PLZTと反応するかあるいは
PLZT中のPbO量のコントロールが悪く好ましいP
LZTが得られない。特にPLZTにおいて透光性を要
求される場合、pboを過剰にPLZTに投入せしめ、
pboの揮発と同時に空孔をなくシ、透光性を高めるも
のであり、pb。
In the above prior art, A, 120. In the hot press method using large-sized materials and the PbO atmosphere firing method, Al2O3
P that easily absorbs pbo, reacts with PLZT, or has poor control over the amount of PbO in PLZT, which is preferable.
LZT cannot be obtained. Especially when translucency is required in PLZT, excessive amount of pbo is added to PLZT,
At the same time as pbo volatilizes, it eliminates pores and increases translucency, and pb.

の調節はその製品の価値に大きく影響し、そのコントロ
ールを慎重に行うことを要す。
The adjustment of the product greatly affects the value of the product and requires careful control.

また、ホットプレス法、熱間静水圧法においては量産性
および工業的実施において煩雑であり、また任意の成形
品が得られない欠点がある。
In addition, the hot press method and the hot isostatic pressure method are complicated in terms of mass production and industrial implementation, and have the disadvantage that arbitrary molded products cannot be obtained.

そこで2本発明者等が鋭意研究した結果、つぎの発明を
するに至った。
As a result of intensive research by the two inventors, they came up with the following invention.

即ち、PLZTおよびPLZTにドーピング処理したも
のを製造する方法において、焼結時にMgOを主成分と
する耐火物で周囲を形成し、前記以外の耐火物を焼結雰
囲気内で使用せずに焼結する方法である。
That is, in the method of manufacturing PLZT and doped PLZT, the periphery is formed with a refractory whose main component is MgO during sintering, and sintering is performed without using any other refractory in the sintering atmosphere. This is the way to do it.

さらにその実施態様として上記発明において焼結雰囲気
が酸化雰囲気である方法および焼結時に加圧しない方法
を見い出した。
Further, as embodiments thereof, in the above invention, a method in which the sintering atmosphere is an oxidizing atmosphere and a method in which no pressure is applied during sintering have been discovered.

以下本発明において詳細に説明する3、PLZTを製造
するだめのPl:+O,La2O3、ZrO2゜TlO
2粉を型に入れ所定の形状とし、常温で加圧成形する。
3. Pl for producing PLZT: +O, La2O3, ZrO2゜TlO, which will be explained in detail in the present invention below.
Put the two powders into a mold to give the desired shape, and press and mold at room temperature.

他にBa、 Sr、 Hd、 Sm、 Oa、 Nb、
 Fe、 Li。
In addition, Ba, Sr, Hd, Sm, Oa, Nb,
Fe, Li.

Hθ等をドーピングしたものも本発明の対象処理物と々
る。
Materials doped with Hθ or the like can also be treated as objects of the present invention.

前記P T、 Z TをMgOからなる板状面」大物に
より包囲し、1100−1200℃1 n 〜40 H
r加熱し、焼結を行う。MgO板は、他の拐料に溶射等
で付着したものでも良り、MgO板自体であっても良い
The above P T and Z T were surrounded by a large plate-like surface made of MgO, and heated at 1100-1200°C 1 n ~ 40 H.
rHeat and sinter. The MgO plate may be attached to another coating material by thermal spraying or the like, or may be the MgO plate itself.

またMgO粉1Ml板の厚さは5〜20藺前後の厚さが
好ましい。
Further, the thickness of the 1Ml MgO powder plate is preferably about 5 to 20 mm.

MgO板は、揮発するpboを吸収する割合が少ないた
め、従来のごと(PbZrO3およびPbO2を充填し
たりする必要がなく、第1図のごとく開放で行えるため
工業的に実施する上で量産化かし易い。またMgO板の
みでなくとも底部にMgO粉をしく等しても良い。
Since the MgO plate absorbs less volatile pbo, there is no need to fill it with PbZrO3 and PbO2 as in the past, and it can be used in an open state as shown in Figure 1, making it easy to mass-produce for industrial implementation. .Also, instead of just the MgO plate, MgO powder may be applied to the bottom.

またPLZTを形成するために添加する過剰の鉛量は少
なくてすむ。外壁であるMgOに吸収されないため室内
がpboで直ちに充満するためである。
Further, the amount of excess lead added to form PLZT can be small. This is because the room is immediately filled with PBO because it is not absorbed by MgO, which is the outer wall.

゛また。焼結時間を短くするためには常圧で焼結する前
にホットプレス等を数時間行った後。
゛Again. To shorten the sintering time, perform hot pressing for several hours before sintering at normal pressure.

本発明の方法を行っても良い。The method of the invention may also be carried out.

以上のように本発明を実施することにより以下のような
効果が得られる。
By implementing the present invention as described above, the following effects can be obtained.

(1) 本発明を実施することにより焼結処理が簡易と
なり、工業的にPLZTの量産が可能と々る。
(1) By carrying out the present invention, the sintering process becomes simple and it becomes possible to industrially mass-produce PLZT.

(2) ポットプレス、熱間静水圧焼成を用いることな
く焼結を可能とし、製造コストが極めて安価となる。
(2) Sintering can be performed without using pot press or hot isostatic pressure firing, and the manufacturing cost is extremely low.

(3)Al、Oo等を充填する方法でないため、製品中
への不純物混入等の心配がない。
(3) Since this method does not involve filling with Al, Oo, etc., there is no need to worry about contamination of impurities into the product.

(4) またPLZTが必要とする透過率も高い値であ
った。
(4) The transmittance required by PLZT was also a high value.

実施例 PbO,Tie、 ZrO2,La2O3粉を調整後混
合し9円柱状の型に入れプレス後、ホットプレスで15
0Kr f /m圧力、1200℃温度、2時間で焼成
した。
Example PbO, Tie, ZrO2, La2O3 powders were adjusted and mixed, placed in a 9 cylindrical mold, pressed, and then heated in a hot press for 15 minutes.
It was fired at a pressure of 0 Kr f /m and a temperature of 1200° C. for 2 hours.

その後、 MgOの7關厚の板(1)で形成した第1図
に示すような箱に置き酸素等入口(3)より酸素を流入
し酸素雰囲気、常圧で加熱炉(4)により1200℃、
40時間焼成を行った。粒径2μ、透過率は厚み0.5
 +am 、波長6000Wで65優の値であり好まし
い値であった。
Thereafter, the box was placed in a box as shown in Figure 1 made of a 7-inch thick MgO plate (1), and oxygen was introduced through the oxygen inlet (3) and heated to 1200°C in an oxygen atmosphere at normal pressure in a heating furnace (4). ,
Firing was performed for 40 hours. Particle size: 2μ, transmittance: thickness: 0.5
+am and a wavelength of 6000 W, the value was 65 excellent, which was a preferable value.

pboの過剰揮発が見られなかったため、好ましいPL
ZTが得られた。−止たPbO+PbZrO3を充填す
る必要がなく、焼結作業が簡易に出来た。
This is a preferable PL because no excessive volatilization of pbo was observed.
ZT was obtained. - There was no need to fill with stopped PbO+PbZrO3, and the sintering work could be done easily.

比較例 上記と同様な条件で、Al□03の板で形成した箱内に
、試料(2)を置き焼成したところ、pboの揮発量が
多くなシ好ましい透過率は得られなかった。
Comparative Example When sample (2) was placed and fired in a box made of an Al□03 plate under the same conditions as above, a preferable transmittance was not obtained because the amount of pbo volatilized was large.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は2本発明の一実施態様を示すものである。 (11MgO板 (2)試料 特許出願人 日本鉱業株式会社 代理人 弁理士(7569)並用啓志 第1図 1゜ FIG. 1 shows one embodiment of the present invention. (11MgO plate (2) Sample Patent applicant: Japan Mining Co., Ltd. Agent: Patent attorney (7569) Keishi Namiyo Figure 1 1゜

Claims (3)

【特許請求の範囲】[Claims] (1) P L Z TおよびPLZTにドーピング処
理したもの(以下PLZTと称す。)を製造する方法に
おいて、焼結時にMgOを主成分とする耐火物のみで周
囲を形成し、前記以外の耐火物を焼結雰囲気内で使用せ
ずに焼結することを特徴とするPLZTの製造方法。
(1) In a method for manufacturing PLZT and PLZT doped (hereinafter referred to as PLZT), the surrounding area is formed only with a refractory whose main component is MgO during sintering, and no refractory other than the above is used. A method for producing PLZT, characterized in that PLZT is sintered without being used in a sintering atmosphere.
(2) 特許請求の範囲第1項において、焼結雰囲気が
酸化雰囲気であることを特徴とするPLZTの製造方法
(2) The method for manufacturing PLZT according to claim 1, characterized in that the sintering atmosphere is an oxidizing atmosphere.
(3) 特許請求の範囲第1項において、焼結時に加圧
しないことを特徴とするPLZTの製造方法。
(3) The method for manufacturing PLZT according to claim 1, characterized in that no pressure is applied during sintering.
JP59032479A 1984-02-24 1984-02-24 Manufacture of plzt Pending JPS60176969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59032479A JPS60176969A (en) 1984-02-24 1984-02-24 Manufacture of plzt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59032479A JPS60176969A (en) 1984-02-24 1984-02-24 Manufacture of plzt

Publications (1)

Publication Number Publication Date
JPS60176969A true JPS60176969A (en) 1985-09-11

Family

ID=12360113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59032479A Pending JPS60176969A (en) 1984-02-24 1984-02-24 Manufacture of plzt

Country Status (1)

Country Link
JP (1) JPS60176969A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4716134A (en) * 1985-12-10 1987-12-29 Mitsubishi Mining And Cement Co., Ltd. Dielectric ceramic composition
JPH03247562A (en) * 1990-02-26 1991-11-05 Ube Ind Ltd Production of transparent plzt ceramics

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4716134A (en) * 1985-12-10 1987-12-29 Mitsubishi Mining And Cement Co., Ltd. Dielectric ceramic composition
JPH03247562A (en) * 1990-02-26 1991-11-05 Ube Ind Ltd Production of transparent plzt ceramics

Similar Documents

Publication Publication Date Title
US3853973A (en) Isostatic hot-pressing process for manufacturing dense sintered articles
JP2773193B2 (en) Method for producing translucent yttria sintered body
KR20010021275A (en) Process for producing piezoelectric ceramics
US4179486A (en) Method of protecting Si3 N4 ceramic alloy during heating
JPS60176969A (en) Manufacture of plzt
US4957901A (en) Method of manufacturing an object from superconductive material
JPH04228466A (en) Production of sintered material of tin oxide
JPH0377148B2 (en)
US3113846A (en) Titanium ceramic composite bodies
JPH022824B2 (en)
JPS6283368A (en) Manufacture of plzt
JPS5957967A (en) Manufacture of light permeable cubic boron nitride fine body
JPS5926966A (en) Manufacture of ceramics green molded body
JPS6054795B2 (en) Manufacturing method for high-density piezoelectric ceramics
JP2728706B2 (en) Aluminum nitride sintered body
JPS63310961A (en) Material for vacuum deposition
JPH0940460A (en) Production of titanic acid based sintered body
SU744744A1 (en) Method of manufacturing ferrite articles
Atkin et al. The Practical Aspects of Sintering
JPS5951515B2 (en) Manufacturing method of Sialon sintered body
JPH03193605A (en) Production of target material for forming oxide superconducting thin film
JP2985350B2 (en) Method for producing lead-based composite oxide using phase transition method
JPS58172268A (en) Manufacture of sample for thermal hydrostatic press
JPH01111732A (en) Production of glass
JPS63100061A (en) Manufacture of light permeable ceramics