JPS60175431A - Heat treating apparatus - Google Patents

Abstract

PURPOSE:To uniformly emit a light to the entire surface of a wafer without applying a fluctuation or a rotation to the wafer itself by providing a reflecting plate behind a light source, and enabling to normally or reversibly rotate the light source as the substantial center at the prescribed rotating angle. CONSTITUTION:Light sources 21 arranged at the prescribed pitch are arranged as opposite upper and lower pairs of a heating furnace. A reflecting plate 23 made of a parabolic mirror having a mirror surface formed substantially in a parabolic shape in section is disposed behind the light sources 21, and the light sources 21 are displaced from the focal position of the mirror slightly to the plate 23 side. The plate 23 made of the parabolic mirror is projected at the base with a supporting frame 25, and a shaft 27 is secured to the prescribed position of the frame 25. The shaft 27 is freely slidable in a frame 31.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a heat treatment apparatus that performs heat treatment on an object to be heat treated, such as a semiconductor substrate (hereinafter referred to as a wafer), by irradiating light from both the front and back surfaces thereof.

In general, wafer heat treatment or post-treatment after ion implantation or ion evaporation is not limited to heat treatment to activate the CC-in layer and create a uniform composition, as well as other heat treatment to stabilize the silicon film. Heat treatment and the like are used over a wide range of areas to establish E=I contact. In any of these heat treatments, it is necessary to uniformly heat the entire surface of the wafer, including the front and back surfaces.
When light irradiation from a halogen lamp or the like is used as a heating means for speeding up the heat treatment, it is necessary to accurately uniformize the light irradiation from the heating master onto the wafer.

In order to make the illuminance distribution uniform over the entire surface of the wafer, conventionally, as disclosed in, for example, Japanese Patent Laid-Open No. 57-147237, the wafer housed in a heating furnace is moved horizontally with respect to the light source, or the wafer is is made to swing in the horizontal direction with a predetermined amplitude.

However, in such conventional devices, a light source is fixed in advance at a predetermined distance from each other on each side of the wafer, so that the illuminance distribution between the front and back surfaces of the wafer is made uniform. However, there are still many cases in which the illuminance balance between the front and back surfaces of the wafer is not accurately achieved. If the illuminance balance between the front and back surfaces of the wafer is unbalanced, not only will it be impossible to uniformly heat the entire surface of the wafer, but if the illuminance balance is severe, cracks may occur on the wafer surface. The resulting vines may also be damaged.

In addition, in conventional apparatuses, the wafer itself is moved, swung, rotated, etc. in the horizontal direction, and as a result, there is a risk that the wafer may be damaged.

Especially in heat treatment by light irradiation from a light source.

Since the heat treatment is completed in a short time of 10 seconds to several tens of seconds, the wafer itself is subjected to a fairly high-speed movement, which may also cause damage to the wafer.

In conventional apparatuses that apply some kind of motion to the wafer itself to irradiate the front and back surfaces of the wafer with light, heat treatment of the entire front and back surfaces of the wafer is not necessarily satisfactory for the reasons mentioned above. This also contributes to a decrease in yield.

The present invention has been made in view of the above-mentioned circumstances, and its first purpose is to uniformly irradiate the entire surface of the wafer with light from a light source without shaking or rotating the wafer itself. The purpose of the present invention is to provide a heat treatment device that can perform the following steps. The second object of the present invention is.

It is an object of the present invention to provide a Notekiru heat treatment apparatus that allows adjustment of the illuminance distribution on each of the front and back surfaces of a wafer with a simple structure over both surfaces of the wafer.

The above objectives have been achieved by providing a heat treatment apparatus having the following configuration.

That is, 9 the present invention comprises a heating furnace, a supporter for supporting an object to be heat treated in the heating furnace, and a light source disposed opposite to each of the front and back surfaces of the object to be heat treated supported in the heating furnace. A heat treatment apparatus for heat-treating an object to be heat-treated by light irradiation from the light source, comprising: a reflecting plate provided behind the light source and supported to be rotatable substantially around the light source; The present invention relates to a heat treatment apparatus characterized in that it is provided with a rotation mechanism that rotates the reflection plate forward and backward at a predetermined rotation angle with the light source as the substantial center.

One of the features of the heat treatment apparatus according to the present invention is that the front and back can surfaces of the heat treatment object are rotated forward and backward at a predetermined rotation angle while maintaining the heat treatment object in a stable state in the heating furnace. It is possible to perform uniform heat treatment on.

Furthermore, one of the other features of the heat treatment apparatus according to the present invention is that the distance between the light source and the reflection plate with respect to the object to be heat treated in the heating furnace can be freely adjusted.

Next, an embodiment in which the heat treatment apparatus according to the present invention is applied to a wafer annealing treatment apparatus will be described with reference to the accompanying drawings.

[First Embodiment] FIG. 1 is a vertical sectional view schematically showing a heat treatment apparatus according to the first embodiment of the present invention, in which a wafer (1) is placed in a support placed in a heating furnace (3) made of quartz glass. It is positioned and placed on the container (5). This supporter (5) is made by molding 9 quartz glass into an annular shape, and a plurality of quartz glass support pins (7) are implanted on the annular body, and the supporter (5) is made of quartz glass.
7) A wafer (1) is positioned and placed thereon.

The supporter (5) is fixed at its base to a sealing plate (11) for sealing the heating furnace (3) via a sealing member (9), and the sealing plate 0 is further attached to the operating rod αJ. It is supported and is movable in the horizontal direction by a drive device (not shown). This mechanism accommodates the wafer (1) to be heat-treated in the heating furnace (3), and carries out the heat-treated wafer (1) from the heating furnace (31).

Light sources (21+) such as halogen lamps are arranged at a predetermined pitch in vertically opposing positions of the heating furnace (3).
Each light source c! 1) is a linear thing extending perpendicular to the plane of the paper, and behind it is placed a reflecting plate made of a parabolic mirror with a mirror surface whose cross section is approximately parabolic, and the light source +2]
) is arranged slightly shifted toward the reflector (toward) from the focal point of the parabolic mirror. Each of these reflecting plates (2) is configured to be able to rotate forward and backward at a predetermined angle with the light source ff1l+ as a substantial rotation center by a reflecting plate rotation mechanism to be described later.

2 and 3 are a partial front sectional view showing an overview of the above-mentioned reflector rotary machine groove and a sectional view taken along the line n+-n+ of FIG. 1.

In these figures, only the reflection plate rotation mechanism disposed above the heating furnace (3) is shown.

The same applies to the reflection plate rotation mechanism disposed below the heating furnace (3), so illustration thereof is omitted.

In these figures, a reflecting plate @ made of a parabolic mirror has a support frame (C) protruding from its base, and a shaft (5) is fixed to a predetermined position of the support frame (C). Furthermore, the axial surface is a sliding rod that extends above the 1 reflector (c).
It is supported so as to be able to slide vertically within a U-shaped sliding frame clll that protrudes from the top, and the upper limit of its sliding is supported by the sliding frame Therefore, it is difficult for the shaft end to freely slide within the sliding frame (3).
The stroke is determined according to the rotation angle (θ) of the reflection plate (2) as described later.

Incidentally, in FIG. 2, the nine rotation angles (θ) are exaggerated considerably for convenience of explanation.

The sliding frame (toward) is always biased in its length direction by elastic means + 331 (Fig. A guide member (371) is provided at a predetermined position along the sliding frame □□□, and the guide member @ directs the direction of movement of the sliding frame (to). Regulations are in place.

As mentioned above, the columnar light source Cυ is placed slightly on the side of the reflector from the focal point of the reflector consisting of a parabolic mirror. (2
1) is fixed at both ends by light source support members (3'll). This support member (3gl) is inserted through openings (41) provided on both sides of the reflector, and the support member ( (to) may be fixed to a fixed part (not shown).This support member (391) functions as the rotation axis of the reflector, so the inside of the reflector can be freely rotated about the support member (391) as the rotation axis. .

The reflector rotation mechanism is configured as described above.

Therefore, when the cam shaft (0) is rotated by a drive motor (not shown), the sliding rod reciprocates horizontally in the length direction at certain pitches depending on the eccentricity of the cam.

This sliding frame c! With the movement of the sieve, the shaft end and the support frame (a), which are slidably supported within the sliding frame (31), are moved.

It reciprocates horizontally at a predetermined pitch. On the other hand, the reflective plate (goods) fixed to the support frame (5) is connected to the support member c1.
Since the reflecting plate is rotatably mounted on a shaft by the gl, the reflecting plate rotates as the outside of the sliding ring reciprocates around a rotation axis that is slightly shifted from the parabolic focal point position to the inside of the reflecting plate. . Therefore, the rotation angle (0) of the first reflecting plate (to) can be controlled by appropriately selecting the eccentric cam (35), and the sliding frame (311
The stroke within is determined. Accordingly, the upper and lower limits of the sliding frame (311) mentioned above are as follows.

It is necessary to set the above-mentioned stroke within an allowable range.

By the way, in general, the light irradiated onto the surface of the wafer (11) from the light source Cυ disposed at a position slightly shifted toward the reflector (2) from the focal point of the reflector (to) consisting of a parabolic mirror, is emitted from the light source (2). Synchrotron radiation directly emitted from !l and 1 reflector (to)
It becomes the sum of the reflected light reflected from the The illuminance distribution on the wafer (1) changes depending on the distance between the light source (21), the inside of the reflector, and the wafer (1), but by appropriately selecting each of the above positional relationships, the illuminance distribution on the wafer fi+ can be adjusted. On the surface, an illuminance distribution as shown in FIG. 4 can be achieved.

In the figure, (451 is directly from the light source Qυ to the wafer (1
), and the slope of the illuminance distribution curve 151 changes as the distance between the light source (21) and the wafer (1) changes. (The phrase indicates the illuminance distribution on the wafer (1) of the light reflected from the reflector (2).

Since the center of the wafer (1) is in the shadow of the light source Qυ, the illuminance due to the reflected light at the center becomes zero. As mentioned above, since the light source 121) is arranged at a position slightly shifted from the focal point of the reflector (2) toward the reflector (2), the illuminance distribution of the reflected light on the wafer (1) is as follows.

It is larger at the solid edge of the wafer. Therefore, the illuminance distribution on the wafer (1) given as the sum of the emitted light and the reflected light can be increased by +4 by adjusting the distance between the light source I21) and the wafer (1)! It can be as shown in FIG.

However, in practice, as shown in Figure 1, in order to provide sufficient illuminance to the actual size wafer (1), a plurality of light sources (2D) are placed in the upper and lower directions of the heating furnace (3). In this case, if the wafer (1) remains fixed, the illuminance distribution on the wafer (1) will not be uniform over the entire surface due to interference from the adjacent light source (2) and reflection plate (2).

The heat treatment apparatus according to the present invention has a light source Qυ and a reflector plate (2) disposed above and below a heating furnace (3), and a light source C! Since the reflector (to) is rotated forward and backward at a predetermined angle with υ as the actual center, the illuminance distribution on the wafer (1) can be made uniform, as shown in FIG. I can do it. In the figure, curve 1 (451471) represents the illuminance distribution of light from each light source (211 and reflector (to)) facing the wafer (1), and curve 4 represents the illuminance distribution of the illuminance distribution shown by curve 1451 (4η). The curve (51) shows the actual illuminance distribution on the wafer (1) as a sum.The curve (51) also shows the curve (51) when each reflector (c) is rotated clockwise at a predetermined angle (θ) by the above-mentioned reflector rotation mechanism.
9 curves (5
3) shows the actual illuminance distribution on the wafer (1) as the sum of the curve +451 (51) at that time. Conversely, when the reflector is rotated counterclockwise by a predetermined angle (θ) around the light source (21), the illuminance distribution is a curve (53'
), and by rotating the reflector (2) forward and backward by a predetermined angle (θ) in this way, 2 curves + a (s3) (53
′), the illuminance distribution changes so that the peaks and valleys of each curve complement each other. Therefore,
The wafer (1) is placed in a heating furnace (3), and while the heat treatment is performed, the reflector is continuously rotated forward and backward by a predetermined angle (θ) at a predetermined speed, thereby coating the entire surface of the wafer (1). Uniform light irradiation can be performed on the target.

Although the above description has been made regarding the irradiation of light onto the front surface of the wafer (1) for convenience of explanation, it goes without saying that the same applies to the back surface of the wafer (1).

Further, in the above-described embodiment, the illuminance of the light reflected from one reflecting plate at the eight edges is increased.

The light source Qυ is arranged at a position slightly shifted toward the reflector from the focus of the reflector (to) consisting of a parabolic mirror. At the same time, it is also possible to slightly widen the vicinity of the end of the parabolic mirror to form a reflecting plate (the same applies to the second embodiment described below).

[Second Embodiment] FIG. 5 shows an implementation in which the heat treatment apparatus shown as the first embodiment is provided with adjustment means for adjusting the distances of each light source Qυ and the reflection plate (2) to the wafer (1) surface. It is a figure which shows an example.

In this example, the basic configuration of the heat treatment apparatus is the first
Since it is similar to the embodiment, only the adjustment means will be described here.

The difference between the first embodiment and the second embodiment will become clearer by comparing FIG. 3 and FIG. 5. In the first embodiment, the support member c1gl of the light source t2υ was fixed to a fixed part (not shown), but in this second embodiment, the light source (2D support member) is attached to the lower end of the adjustment rod (55). The adjustment rod (55) has a threaded groove on its upper part, and a nut (57) (59') is screwed into the threaded groove.
This allows adjustment in the vertical direction with respect to the fixing part (61) (that is, with respect to the wafer (1)). Therefore, when adjusting the distance between the light source (2I) and the reflector and the wafer (1), it is only necessary to operate the nuts (57) and (59) screwed into the adjustment rod (55). The adjustment means is configured in this way, and the adjustment means is arranged in the heating furnace (3).
A light source (211 and a reflector) placed below the wafer (1) is also provided, so that the illuminance on the front and back surfaces of the wafer (1) can be maintained equally.

In particular, the lack of illuminance at the peripheral edge of the wafer (1) has traditionally been a problem, but with the adjustment means shown in this embodiment, the light source (21) and the reflector facing the peripheral edge of the wafer (1) can be reduced. (1) and the wafer (1) can be brought close to each other, so that the peripheral edge of the wafer (1) can also be irradiated with sufficient light.

In this embodiment, the positional relationship between the shaft (5) and the sliding frame G changes as the distance between the light source c21) and the reflecting plate is adjusted with respect to the wafer (1).

It is necessary to select the stroke of the sliding frame 011 so that the shaft (5) can freely move according to the rotation of the reflection plate (to) even after the distance adjustment.

Regarding the rotational movement of the reflector ■ in the second embodiment,
This is the same as the first embodiment, and the explanation will be omitted.

[Third Embodiment] FIG. 6 shows a third embodiment of the heat treatment apparatus according to the present invention, and the configuration of the heating furnace (3) portion is the same as that of the first embodiment. In the example.

A light source (71) consisting of a cylindrical halogen lamp has a reflective surface (73) coated with ceramic or the like on about half the circumference.
) is used (see Figure 3). That is, in this embodiment, the light source and the reflecting plate can be considered to be integrated (therefore, this reflecting surface (73) will be referred to as a reflecting plate hereinafter).

In this embodiment, the above-mentioned light sources (71) are arranged at a predetermined pitch at a predetermined distance between the upper and lower blades of the heating furnace (3), and in the case of the above-mentioned first and second embodiments, In comparison, there is an advantage that the arrangement pitch between the light sources (71) can be reduced, and that the wafer (1) can be heat-treated more quickly.

Each light source (71) is configured to be rotated forward and backward at a predetermined rotation angle by a rotation mechanism, which will be described later, as in the first and second embodiments described above.

FIG. 7 is a side sectional view showing an outline of the rotation mechanism,
A light source (71) having a reflecting plate (73) formed by cera-etching and coating approximately half the circumferential surface of a columnar tube surface is inserted into resin support members (75) at both ends thereof, The supporting outer curved surface of the supporting member (75) is tapered, and a tightening member (77) having a tapered inner wall that engages with the tapered portion is attached to the supporting member (75). Support member (7
5) and the tightening member (77) are screwed together through a thread groove provided in the tapered base of the support member (75) and a thread groove provided in the tapered front portion of the tightening member (77).

The light source (71) is integrally fixed to the support member (75) at both ends thereof. The other end of the support member (75) is a sliding bearing into which the fixed shaft (79) is inserted, and the support member (75) integrally supports the light source (71).

It is configured to be able to freely rotate around the shaft (79). The support member (75) has a frame A in a predetermined portion.
(81) is provided protrudingly, and an opening for inserting the sliding shaft (83) is bored in the frame (81).

The sliding shaft (83) inserted into the opening extends into the inverted U-shaped sliding frame (87) protruding from both ends of the frame (85) fixed to the sliding rod 4. The sliding shaft (83) is vertically slidable within the sliding frame (87). As shown, vertical movement of the sliding shaft (83) is regulated by an inverted U-shaped sliding frame (87).

Since the sliding frame has the same structure as in the first and second embodiments, the explanation thereof will be omitted here.

The rotation mechanism in this embodiment has the above-mentioned configuration, and the light source (71) integrated with the nine reflecting plates (73) can be rotated forward and backward at a predetermined rotation angle by this rotation mechanism. That is, as in the first and second embodiments, when the sliding frame (2) is swung at a predetermined pitch in its length direction, the sliding frame (Q!) A frame (85) fixed to the frame (85), a sliding frame (87) protruding from the frame (85), and a sliding shaft whose movement in the horizontal direction is restricted within the sliding frame (87). (83) respectively move horizontally in accordance with the horizontal movement of the sliding rod (2), and as a result of this horizontal movement, the support frame (81) rotatably supported by the sliding shaft (83) is moved to the fixed shaft (79). It is converted into a rotational movement around . Therefore, the light source (71), which is integrally supported by the support member (75) that fixes the support frame (81), is connected to the fixed shaft (79).
) can be rotated forward and backward at a rotation angle that corresponds to the swinging pitch of the sliding rod. In addition, as the support member (75) rotates, the sliding shaft (83) rotatably supports the support frame (81) protruding from the support member (75).
It slides vertically within the sliding frame (87). Therefore, as already described in the first embodiment, the sliding frame (87) must have a clearance that can sufficiently allow the vertical movement of the sliding shaft (83).

In this embodiment, one reflector (73) is used as a light source (71).
Since it is formed by coating on the tube surface of the wafer (1), the cross-sectional shape of the 9-reflector (73) is approximately semicircular, and the illuminance distribution on the surface of the wafer (1) is as follows.

The result is a regular wavy shape as shown in FIG.

The heat treatment apparatus according to this embodiment is as described above.

A reflector (73) integrated with the tube surface of the light source (71) is configured to rotate forward and backward at a predetermined angle around the axis of the light source (71), and the rotation angle of one reflector (73) - That is, by appropriately selecting the rotation angle of the light source (7) itself, and by appropriately selecting the swinging pitch of the sliding rod (2), the phase of the wafer illuminance distribution on the wafer (11) can be shifted. The illuminance distribution on the surface of the wafer (1) can be made uniform.

That is, as shown in FIG. 8, the illuminance distribution on the wafer (1) of light irradiation from each light source (71) has nine curves (97
), but by rotating each of these light sources (71) by a predetermined angle (θ) using the rotation mechanism described above, an illuminance distribution curve (99) whose phase is shifted by 90° is obtained. can be obtained.

Therefore, while the wafer (1) is supported in a stationary state in the heating furnace (3) and heat treatment is performed, the reflector (73) is moved at a predetermined speed.
By continuously rotating the light source (71) coated with wafer (71) forward and backward by a predetermined angle (θ),
1) Uniform light irradiation can be performed over the entire surface.

In the above description, for convenience of explanation, the light irradiation was described on the front surface of the sea urchin/1 (11), but it goes without saying that the same applies to the back surface of the wafer (1).

[Fourth Embodiment] FIG. 9 shows a wafer (1) of a light source (71) - and also a reflector (73) - in the heat treatment apparatus shown as the @3 embodiment.
This is an embodiment in which adjustment means for adjusting the distance to the surface is provided.

In this example, the basic configuration of the heat treatment apparatus is the third
Since it is the same as the embodiment, only the adjustment means (adjustment means) will be explained here.

In the third embodiment, nine reflecting plates (73) are integrally provided on approximately half the curved surface of the tube surface, and the rotation axis (79) of the light source (71) is.

In this embodiment, the rotating shaft (79') is fixed to a fixed part (not shown), as shown in FIG.

Supported by the lower end of the adjustment rod (89), the adjustment rod (89)
has a threaded groove on its upper part, and can be adjusted vertically (i.e., relative to the wafer (1)) with respect to the fixing part (95) by nuts (91) (93) screwed into the threaded groove. It is made possible. Therefore, when adjusting the distance between the light source (71) - and therefore also the reflector (73) - and the wafer (1), the nut (91) screwed onto the adjustment rod (89) is used.
Just operate (93).

As already mentioned in the description of the second embodiment.

The conventional problem of insufficient illuminance at the periphery of the wafer (1) can be solved by adjusting the light source (71) facing the periphery of the wafer (1) by adjusting means consisting of an adjustment rod (89) and nuts (91) (93). Therefore, by bringing the reflection plate (73) integrally provided on the tube surface of the light source (71) close to the wafer (1), sufficient light can be irradiated even to the periphery of the wafer (1). This can be resolved by giving

[Fifth Embodiment] FIG. 11 is a side sectional view showing still another embodiment of the present invention, in which the distance between the light source (2D and the reflecting plate) can be adjusted. This embodiment Since the basic configuration of the heat treatment apparatus is the same as that of the first embodiment, only the adjustment means will be explained here.

Each end of the support member Oi is provided with a recess (102) in which the light source (21) can be moved vertically, and the end of the light source Qυ is attached to the recess (102) by a spring (101).
) is inserted through the bolt (100) which moves the light source 2+1 within the recess (102).

With this structure, it is possible to finely adjust the distance between the light source (21) and the reflecting plate -, but in this case, when the reflecting plate is rotated as described above, the light source (21+) is not the center of rotation. Although a slight deviation occurs from the illuminance distribution shown in FIG. 10, the adjustment distance is limited to about 1 to 2 mm, so it does not cause any problem in practical use.

In the first to fifth embodiments described above, the wafer (1
The supporter (5) that supports the wafers (1) in the heating furnace (3) is shown to accommodate the wafers (1) one by one in the heating furnace (3). There is no need to keep the wafer (1) stationary in the furnace (3).2 For example, for the purpose of speeding up the heat treatment, a conveyor belt that holds one wafer (1) and transports it at a stable speed can be used as a support. I can do it. Yet again. It goes without saying that the adjustment means shown in the second, fourth and fifth embodiments described above can be adjusted separately for each light source (2) and (71).

The heat treatment apparatus according to the present invention has the above-described configuration and provides the following effects.

■With the wafer housed in the heating furnace stationary, the wafer surface is irradiated with light from the light source at a predetermined pitch, making it possible to uniformly irradiate the entire surface of the wafer with light from the light source. Moreover, since the wafer itself is in a stable state within the heating furnace, there is no risk of damaging the wafer.

■Since an adjustment means is provided to adjust the distance between the wafer housed in the heating furnace and the light source placed opposite the front and back surfaces of the wafer, the illuminance between the front and back surfaces of the wafer can be balanced. Moreover, by bringing the light sources facing the wafer periphery closer to the front and back surfaces of the wafer, the wafer Ii'
Sufficient illuminance can be obtained even at the il edge.

■Since the distance between the light source and the wafer can be adjusted by the adjustment means, even if the manufacturing accuracy of the reflective surface or the placement position of the light source is rough during the manufacturing process of the heat treatment equipment, the adjustment means can adjust the distance between the light source and the wafer. The position can be corrected, therefore the manufacturing process can be simplified and speeded up, and the illuminance distribution can be more accurately made uniform.

■The adjustment means consists of an adjustment rod and a nut that is screwed into the adjustment rod, and although it has an extremely simple structure, it can accurately obtain the appropriate irradiation conditions for the wafer, and it is easy to operate. And it can be done quickly.

[Brief explanation of the drawing]

FIG. 1 is a front view schematically showing an overview of a first embodiment of the heat treatment apparatus according to the present invention, and FIG. 2 is a partial cross-sectional view showing an overview of the reflector rotation mechanism of the above-mentioned apparatus shown in FIG. 9 is a partial enlarged view, FIG. 3 is a sectional view of FIG. 1, FIG. 4 is a graph showing the illuminance distribution from the light source in the first embodiment, and FIG. A partial plan view, FIG. 6 is a front view schematically showing the outline of the third embodiment, and FIG. 7 is a partial view.
~' side sectional view, FIG. 8 is a graph showing the illuminance distribution in the third embodiment, FIG. 9 is a partial side view showing the fourth embodiment, and FIG. 10 is the first embodiment of the device. FIG. 11 is a schematic diagram showing changes in illuminance distribution in the fifth embodiment, and FIG. 11 is a partial side view showing the fifth embodiment. (1)...Object to be heat treated (3)...Heating furnace (5)...Supporter (21) (71)...
...Light source (23X73) ...Reflector plate (to) ~ (41) ...Rotation mechanism (29), (75
)-(87)...Rotating mechanism (55)(57)(
59)...Adjustment means (89X91) (93)
...Adjustment means Fig. 1 Fig. 2 Fig. 3 Fig. 4 0- Fig. 5 Fig. 7 Fig. 8 Fig. 9 Fig. 11

Claims (7)

[Claims] (1) A heating furnace, a support for supporting the object to be heat treated in the heating furnace, and a light source disposed to face each of the front and back surfaces of the object to be heat treated supported in the heating furnace. In a heat treatment apparatus configured to heat-treat an object to be heat-treated by irradiating light from the light source, the light source is provided behind the light source. A heat treatment characterized by comprising: a reflecting plate rotatably supported substantially around the light source; and a rotation mechanism that rotates the reflecting plate forward and backward at a predetermined rotation angle substantially around the light source. Device. (2) The heat treatment apparatus according to claim 1, wherein the reflecting plate is a linear parabolic mirror having a substantially parabolic cross-sectional shape. (3) A patent claim in which the light source is shifted from the focal point of one reflector toward the reflector so that the illuminance distribution of the light reflected from the reflector becomes relatively large at the periphery. 2. The heat treatment apparatus according to item 2. (4) The reflector and light source are arranged so that the illuminance distribution of the reflected light from the 9 reflector becomes relatively large at the periphery. The base of the reflecting plate has a parabolic shape. 3. The heat treatment apparatus according to claim 2, wherein the edge thereof is expanded outward, and the light source is disposed at a focal position of the base of the reflector plate. (5) A reflector is integrally formed on a part of the tube surface of the light source.
A heat treatment apparatus according to claim 1. (6) The heat treatment apparatus according to claim 4, wherein the reflecting plate is formed by coating a part of the tube surface of the light source. (7) The heat treatment apparatus according to claim 1, further comprising adjusting means for adjusting the distance between the object to be heat treated, the light source, and the reflecting plate.