JPS6017174B2 - variable attenuation circuit - Google Patents

variable attenuation circuit

Info

Publication number
JPS6017174B2
JPS6017174B2 JP7498878A JP7498878A JPS6017174B2 JP S6017174 B2 JPS6017174 B2 JP S6017174B2 JP 7498878 A JP7498878 A JP 7498878A JP 7498878 A JP7498878 A JP 7498878A JP S6017174 B2 JPS6017174 B2 JP S6017174B2
Authority
JP
Japan
Prior art keywords
diode
attenuation
conductance
circuit
variable attenuation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7498878A
Other languages
Japanese (ja)
Other versions
JPS551764A (en
Inventor
道雄 中西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7498878A priority Critical patent/JPS6017174B2/en
Publication of JPS551764A publication Critical patent/JPS551764A/en
Publication of JPS6017174B2 publication Critical patent/JPS6017174B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24Frequency- independent attenuators
    • H03H7/25Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H03H7/253Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode

Description

【発明の詳細な説明】 この発明はダイオードを利用した可変減衰回路において
減衰ダイナミック特性の改善に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvement of attenuation dynamic characteristics in a variable attenuation circuit using diodes.

従来のこの種のダイオードを利用した高可変減衰回路は
第1図のようなダイオードDI〜○4で構成され制御入
力端子より制御電圧を印加してダイオードのコンダクタ
ンスを可変し、入力回路のRIとD1,D2のコンダク
タンスの比およびR2とD3,D4のコンダクタンスの
比による減衰を得ていた。
A conventional high variable attenuation circuit using this type of diode is composed of diodes DI to ○4 as shown in Figure 1, and a control voltage is applied from the control input terminal to vary the conductance of the diode, and the RI of the input circuit and Attenuation was obtained by the ratio of the conductances of D1 and D2 and the ratio of the conductances of R2 and D3 and D4.

この種の回路を利用した可変減衰器は簡単でかつ広ダイ
ナミック減衰特性が得られる反面、使用信号周波数が高
くなと、ダイオードDI〜D4のカットオフ時の接合容
量が無視できず、さらに抵抗R1,R2の値をある程度
大きくして高減衰量をとる回路とした場合回路構成上生
ずるストレーの容量により挿入損失が増加し、制御電圧
に対する減衰特性のダイナミックレンジが大幅に劣化す
る欠点があった。この発明はこれらの欠点を解消するた
めになされたもので回路構成として簡単でしかも広ダイ
ナミック特性を有する可変減衰回路を提供するものであ
る。
A variable attenuator using this type of circuit is simple and can provide a wide dynamic attenuation characteristic, but if the signal frequency used is high, the junction capacitance at cutoff of the diodes DI to D4 cannot be ignored, and the resistor R1 , R2 are increased to some extent to obtain a high attenuation amount, the insertion loss increases due to the stray capacitance caused by the circuit configuration, and the dynamic range of the attenuation characteristic with respect to the control voltage is disadvantageously deteriorated. The present invention has been made to eliminate these drawbacks, and provides a variable attenuation circuit that has a simple circuit configuration and wide dynamic characteristics.

以下第2図に示すこの発明の一実施例について説明する
An embodiment of the present invention shown in FIG. 2 will be described below.

第2図において、R1,R2は減衰量のダイナミック特
性を決定する抵抗、C1,C2はバイパスコンデンサ、
DI〜D4は制御電圧によりコンダクタンスを可変する
ダイオード、TRは出力と可変減衰器とのインピーダン
ス交換を行う増幅器用トランジスタ、L1,L2は同調
コイルでダイオードDI〜D4のコングクタンスが最少
の時、第3図に示すようにLIとD1,02の接合容量
で構成される定K形低域ろ波器が使用中心周波数で通過
特性となり(第3図の曲線1)、ダイオード○1,D2
の制御電圧の増加によりコンダクタンスが最大となった
時は、ダイオードD1,D2の接合容量が増加する故、
使用中心周波数付近では定K形ろ波器の阻止特性(第3
図の曲線2)となるような値に同調コイルLIの値を選
んである。同調コイルL2も同様にダイオードD3,D
4と組合せて上記動作を行うように蓬らばれている。こ
のように構成された可変減衰回路は制御入力の制御電圧
が低い時はダイオード01〜D4のコンダクタンスが最
少で入力信号はL1,RIおよびL2,R2を経てトラ
ンジスタTRに加えられ通過減衰最少となり、この時問
題となるダイオードの接合容量、回路のストレーの容量
による損失は同調コイルL1,L2を附加して定K形ろ
波器とすることで改善している。さらに制御入力の制御
電圧が高い時はダイオードDI〜D4のコンダクタンス
最大となり、抵抗R1,R2とダイオードD1,D2お
よびD3,D4のコンダZクタンスの比が最大となり信
号の最大通過減衰量を得ることになる。したがって、同
調コイルし1,L2はダイオードのコンダクタンス最少
時の接合容量を利用して低域ろ波器を形成し、さらに減
衰器の可変幅を大Zきくするため抵抗R1,R2の値を
大きくした時生じるストレーの容量による効果を軽減し
て、減衰回路の挿入損失を下げる働きをするので、この
効果として抵抗R1,R2を大きく選ぶことができ、同
時にダイオードの接合容量の変化に応じてL1,L2よ
りなる定K彩る波器の低域ろ波器の減衰特性の変化を利
用して総合的に減衰器の広減衰ダイナミック特性を得る
ことができる。
In Figure 2, R1 and R2 are resistors that determine the dynamic characteristics of attenuation, C1 and C2 are bypass capacitors,
DI to D4 are diodes whose conductance is varied by control voltage, TR is an amplifier transistor that exchanges impedance between the output and the variable attenuator, and L1 and L2 are tuning coils. As shown in Figure 3, the constant K type low-pass filter consisting of the junction capacitance of LI and D1,02 has a pass characteristic at the center frequency used (curve 1 in Figure 3), and the diodes ○1, D2
When the conductance reaches the maximum due to an increase in the control voltage, the junction capacitance of diodes D1 and D2 increases, so
Near the center frequency used, the constant K type filter's blocking characteristic (third
The value of the tuning coil LI is selected to give curve 2) in the figure. Similarly, the tuning coil L2 has diodes D3 and D.
It is designed to perform the above operations in combination with 4. In the variable attenuation circuit configured in this way, when the control voltage of the control input is low, the conductance of the diodes 01 to D4 is the minimum, and the input signal is applied to the transistor TR via L1, RI and L2, R2, and the passing attenuation is minimized. The losses caused by the junction capacitance of the diode and the stray capacitance of the circuit, which are problems at this time, are improved by adding tuning coils L1 and L2 to form a constant K type filter. Furthermore, when the control voltage of the control input is high, the conductance of the diodes DI to D4 becomes maximum, and the ratio of the resistors R1, R2 and the conductor Z-tance of the diodes D1, D2 and D3, D4 becomes the maximum, obtaining the maximum passing attenuation of the signal. become. Therefore, the tuning coils 1 and L2 form a low-pass filter by using the junction capacitance when the conductance of the diode is at its minimum, and the values of the resistors R1 and R2 are increased to increase the variable width of the attenuator. This function reduces the effect of stray capacitance that occurs when the diode is switched on, and lowers the insertion loss of the attenuation circuit.As a result, resistors R1 and R2 can be selected to be large, and at the same time, L1 , L2, it is possible to comprehensively obtain wide attenuation dynamic characteristics of the attenuator by utilizing changes in the attenuation characteristics of the low-pass filter of the constant-K color wave filter.

以上のように、この発明に係る可変減衰器では、小形で
しかも簡単な回路構成により高い周波数領域に於いても
広減衰ダイナミック特性が実現でき、従来のこの種回路
を多段にして用いる等の欠点を改善する効果を有する。
As described above, the variable attenuator according to the present invention can achieve wide attenuation dynamic characteristics even in a high frequency range with a small and simple circuit configuration, and has disadvantages such as using conventional circuits of this type in multiple stages. It has the effect of improving.

図面の簡単な説明第1図は従釆のダイオードを利用した
可変減衰器の回路図、第2図はこの発明による可変減衰
器.の実施例を示す回路図、第3図は第2図に示した可
変減衰器の減衰特性図である。
Brief Description of the Drawings Figure 1 is a circuit diagram of a variable attenuator using a slave diode, and Figure 2 is a variable attenuator according to the present invention. FIG. 3 is a diagram showing the attenuation characteristics of the variable attenuator shown in FIG. 2.

図においてR1,R2は抵抗、C1,C2はバイパスコ
ンデンサ、DI〜○4はダイオード、L1,L2は同調
コイルである。なお図中同一符号は同一または相当部分
を示す。第1図 第2図 第3図
In the figure, R1 and R2 are resistors, C1 and C2 are bypass capacitors, DI to 4 are diodes, and L1 and L2 are tuning coils. Note that the same reference numerals in the figures indicate the same or corresponding parts. Figure 1 Figure 2 Figure 3

Claims (1)

【特許請求の範囲】[Claims] 1 信号伝送回路に直列に高抵抗を接続すると共に、上
記回路と基準電位との間にダイオードを接続し、上記ダ
イオードに順方向の制御電流を流して該ダイオードのコ
ンダクタンスを可変することにより所定の減衰量を得る
ようにした可変減衰回路において、上記高抵抗と並列に
同調コイルを接続し、上記同調コイルのインダクタンス
値は上記ダイオードのコンダクタンスが最少の時に上記
同調コイルとダイオードの接合容量で構成される低域ろ
波器が使用中心周波数で通過特性となり、上記ダイオー
ドのコンダクタンスが最大の時に上記低域ろ波器が使用
中心周波数で阻止特性となるように設定されたことを特
徴とする可変減衰器。
1 A high resistance is connected in series to the signal transmission circuit, a diode is connected between the circuit and the reference potential, and a forward control current is passed through the diode to vary the conductance of the diode, thereby achieving a predetermined value. In a variable attenuation circuit designed to obtain an amount of attenuation, a tuning coil is connected in parallel with the high resistance, and the inductance value of the tuning coil is made up of the junction capacitance of the tuning coil and the diode when the conductance of the diode is at its minimum. The variable attenuation is characterized in that the low-pass filter has a pass characteristic at the center frequency used, and is set so that the low-pass filter has a blocking characteristic at the center frequency when the conductance of the diode is at its maximum. vessel.
JP7498878A 1978-06-20 1978-06-20 variable attenuation circuit Expired JPS6017174B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7498878A JPS6017174B2 (en) 1978-06-20 1978-06-20 variable attenuation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7498878A JPS6017174B2 (en) 1978-06-20 1978-06-20 variable attenuation circuit

Publications (2)

Publication Number Publication Date
JPS551764A JPS551764A (en) 1980-01-08
JPS6017174B2 true JPS6017174B2 (en) 1985-05-01

Family

ID=13563159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7498878A Expired JPS6017174B2 (en) 1978-06-20 1978-06-20 variable attenuation circuit

Country Status (1)

Country Link
JP (1) JPS6017174B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108060U (en) * 1980-01-21 1981-08-21
JPS56103516A (en) * 1980-01-23 1981-08-18 Hitachi Ltd Variable attenuating circuit
DE19505697A1 (en) * 1995-02-20 1996-08-22 Siemens Ag Amplifier device for amplifying electrical signals in a predetermined frequency range with controllable amplification

Also Published As

Publication number Publication date
JPS551764A (en) 1980-01-08

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