JPS60170201A - Temperature sensor - Google Patents

Temperature sensor

Info

Publication number
JPS60170201A
JPS60170201A JP2574484A JP2574484A JPS60170201A JP S60170201 A JPS60170201 A JP S60170201A JP 2574484 A JP2574484 A JP 2574484A JP 2574484 A JP2574484 A JP 2574484A JP S60170201 A JPS60170201 A JP S60170201A
Authority
JP
Japan
Prior art keywords
temperature sensor
resistance
thin film
temperature
film resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2574484A
Other languages
Japanese (ja)
Inventor
高浜 禎造
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP2574484A priority Critical patent/JPS60170201A/en
Publication of JPS60170201A publication Critical patent/JPS60170201A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明は、抵抗体の電気抵抗値の変化に応じてこの抵抗
体の周囲の温度変化を感知する温度上 ゛ンサ、特に防
災用の火災報知器に使用できる温度センサに関する。
[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to a temperature sensor that detects changes in the temperature around a resistor according to changes in the electrical resistance value of the resistor, especially for fire prevention. This invention relates to a temperature sensor that can be used in an alarm.

〔従来技術とその間照点〕[Prior art and its points of interest]

一般に火災報知器に用いられる温厚センサは、バイメ、
6ル式やベロ一式のような金属材料や流体の熱膨張を利
用するものである。この種の温度センサはその感温エレ
メントの熱容量が大きいため応答性が悪く、熱(火災発
生)を感じてから動作するまでKaio秒から数分の時
間がかがる。従ってこの温度センづによ2て火災警報が
発せられた時点では既に消火活動や避難活動に対して手
遅れになっている場合がしばしばあった。またこの種の
温度センサは可動部分を有しているので、動作の信頼性
および精度にも問題があった。
Generally, the warm sensors used in fire alarms are vime,
It uses the thermal expansion of metal materials and fluids, such as the 6-ru type and tongue type. This type of temperature sensor has poor responsiveness because its temperature-sensing element has a large heat capacity, and it takes from several seconds to several minutes to operate after sensing heat (fire outbreak). Therefore, by the time a fire alarm is issued by the temperature sensor, it is often too late for fire extinguishing and evacuation efforts. Furthermore, since this type of temperature sensor has moving parts, there are also problems with operational reliability and accuracy.

〔発明の目的〕[Purpose of the invention]

本発明は上述の従来の問題点を考慮して、応答性が良く
、動作の信頼性および精度が高い温度センサを提供する
ことを目的としている。
SUMMARY OF THE INVENTION In view of the above-mentioned conventional problems, it is an object of the present invention to provide a temperature sensor with good responsiveness, reliable operation, and high accuracy.

〔発明の要点〕[Key points of the invention]

本発明によればこの目的は、冒頭に述べた形式の温度セ
ンサにおいて、耐熱性および耐食性を有する可撓性の絶
縁フィルムの表面に、抵抗温度係数が大きくかつ耐食性
の金属から成る薄膜抵抗体を形成したことによって達成
される。
According to the present invention, this object is achieved by providing a temperature sensor of the type mentioned at the outset, in which a thin film resistor made of a metal having a large temperature coefficient of resistance and being resistant to corrosion is provided on the surface of a flexible insulating film having heat and corrosion resistance. This is achieved by forming.

〔発−明の実施−例〕[Implementation of the invention-Example]

K説明する。各図面において同一部分には同一符号を付
しである。
K.Explain. Identical parts in each drawing are designated by the same reference numerals.

第1図および第2図は本発明に基づく温度センサのそれ
ぞれ平面図および側面図であり、1は耐熱性および耐食
性に秀れた可撓性の絶縁フィルム、たとえば厚さ50μ
mのポリイミドフィルムであり、2はこの絶縁フィルム
の表面に形成された抵抗温度係数が大きくかつ耐食性に
秀れた金属より成る薄膜抵抗体、たとえば高周波スパッ
タリング法で生成された厚さ500Aの白金層であり、
3はこの薄膜抵抗体2の両端に同様に高周波スパッタリ
ング法で生成された厚さ0.5μmの金層がら成るM極
である。
1 and 2 are a plan view and a side view, respectively, of a temperature sensor according to the present invention, and 1 is a flexible insulating film with excellent heat resistance and corrosion resistance, for example, a thickness of 50 μm.
2 is a polyimide film formed on the surface of this insulating film, and 2 is a thin film resistor made of a metal with a large resistance temperature coefficient and excellent corrosion resistance, for example, a platinum layer with a thickness of 500 A produced by high frequency sputtering method. and
Reference numeral 3 denotes an M pole consisting of a gold layer having a thickness of 0.5 μm, which was similarly produced by high-frequency sputtering at both ends of the thin film resistor 2.

この温度センサは第3図に示したような抵抗一温度特性
を有している。第3図において横軸は温度(T(℃))
であり、縦軸は30℃における抵抗値を基準とした抵抗
値(R(T℃)/R(3o℃):)雪ある。この温度セ
ンサの30℃における抵抗温度係数は0.]5%/℃で
ある。抵抗値はバルクの比抵抗と膜厚、形状から計算さ
れる値の2倍強になるが、薄膜生成条件たとえばスパッ
タリング条件を固定すると、抵抗温度係数および抵抗値
が再現性よく得られる。第4図に、同一形状のセンサに
おいてスパッタリング入力を50 Wおよび100Wに
設定して得た30℃における抵抗値(Ω)と抵抗温度係
数(%/”C)との関係を示す。この場合抵抗値のばら
つきを±10に抑えれば、抵抗温度係数のばらつきは±
0.0015%/℃以内に入り、十分実用できる。
This temperature sensor has resistance-temperature characteristics as shown in FIG. In Figure 3, the horizontal axis is temperature (T (℃))
The vertical axis is the resistance value (R(T°C)/R(3o°C):) based on the resistance value at 30°C. The temperature coefficient of resistance of this temperature sensor at 30°C is 0. ]5%/°C. Although the resistance value is more than twice the value calculated from the bulk resistivity, film thickness, and shape, if the thin film formation conditions, such as sputtering conditions, are fixed, the resistance temperature coefficient and resistance value can be obtained with good reproducibility. Figure 4 shows the relationship between the resistance value (Ω) and the temperature coefficient of resistance (%/''C) at 30°C obtained by setting the sputtering input to 50 W and 100 W for sensors of the same shape. If the variation in value is suppressed to ±10, the variation in temperature coefficient of resistance will be ±10.
It is within 0.0015%/°C, which is sufficient for practical use.

本発明に1ける抵抗体は極めて薄い膜であるので、熱容
量が小さく、周囲温度に敏感に応答する。1またとのセ
ンサをたとえば直径10mmの棒に巻きつけても、薄膜
抵抗体1の層が絶縁フィルムより剥離することはなく、
抵抗値に異常が発生することもない。従って必要に応じ
て種々の形にして使用できる。
Since the resistor according to the present invention is an extremely thin film, it has a small heat capacity and responds sensitively to ambient temperature. Even if one sensor is wrapped around a rod with a diameter of 10 mm, the layer of the thin film resistor 1 will not peel off from the insulating film.
No abnormality occurs in the resistance value. Therefore, it can be used in various forms as required.

第5図−は本発明に基づく温度センサの異なる実施例を
示している。この場合薄膜抵抗体2の両端における電極
3は薄膜抵抗体2の端部を覆うように形成され、更に薄
膜抵抗体2の表面露出部全域が耐食性に秀れた保護被膜
4で覆われている。従 ′つてこのセンサは腐食性の強
い雰囲気にも耐えることができる。
FIG. 5 shows different embodiments of the temperature sensor according to the invention. In this case, the electrodes 3 at both ends of the thin film resistor 2 are formed to cover the ends of the thin film resistor 2, and furthermore, the entire exposed surface of the thin film resistor 2 is covered with a protective coating 4 having excellent corrosion resistance. . Therefore, this sensor can withstand highly corrosive atmospheres.

第6図は更に別の実施例を示し、この場合薄膜抵抗体2
はU字形に形成され、電極3を同じ側に位置させて配線
に有利にされている。また必要に応じ″′C薄膜抵抗体
2を複数回蛇行させて、所望の大きさの抵抗値をもたせ
ることもできる。
FIG. 6 shows yet another embodiment, in which the thin film resistor 2
are formed in a U-shape, and the electrodes 3 are located on the same side, which is advantageous for wiring. Furthermore, if necessary, the C thin film resistor 2 can be meandered a plurality of times to provide a desired resistance value.

なお薄膜抵抗体2の材料として上述の例の白金のほかに
金やチタンなどを用いることもできる。
Note that as the material for the thin film resistor 2, gold, titanium, or the like can also be used in addition to platinum in the above-mentioned example.

可撓性の絶縁フィルムの材料として、上述の例のポリイ
ミドのほかに、ポリオキシベンゾイル、ポリアミドイミ
ド、ポリエーテルエーテル、ケトン、ポリフェニレンサ
ルファイド、ポリフェニレンオキサイド、ポリスルフォ
ン、又はポリテトラフロロエチレンなどを用いることが
できる。
In addition to the above-mentioned polyimide, polyoxybenzoyl, polyamideimide, polyether ether, ketone, polyphenylene sulfide, polyphenylene oxide, polysulfone, or polytetrafluoroethylene may be used as the material for the flexible insulating film. I can do it.

〔発明の効果〕 。〔Effect of the invention〕 .

本発明に基づく温度センサは次のような利点を有してい
る。
The temperature sensor according to the invention has the following advantages.

m m膜抵抗体の熱容量が非常に小さいので、周囲温度
に直ちに(数秒以下)で感応し、応答性が非常によい。
Since the heat capacity of the mm film resistor is very small, it immediately responds to the ambient temperature (within a few seconds) and has very good responsiveness.

(2)感温エレメントすなわち薄膜抵抗体を耐熱性およ
び耐食性に秀れた絶縁フィルム上に形成しているので条
件の厳しい環境でも長期間に亘って使用できる。
(2) Since the temperature-sensitive element, that is, the thin film resistor is formed on an insulating film with excellent heat resistance and corrosion resistance, it can be used for a long period of time even in harsh environments.

(3)可動部分を有していないので、動作の信頼性およ
び精度が高く、火災報知器のほかに空調用など各種の温
度検知センサに使用できる。
(3) Since it has no moving parts, it has high operational reliability and accuracy, and can be used in various temperature detection sensors such as for air conditioning as well as fire alarms.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図はそれぞれ本発明に基づく温度セン
サのそれぞれ平面図および側面図、第3図は本発明に基
づく温度センサの抵抗一温度特性を示す線図、第4図は
本発明に基づく同一形状の温度センサのスパッタリング
の入力をパラメータとじた30℃における抵抗値と抵抗
温度係数との関係を示す線図、第5図は本発明に基づく
温度セン毎の異なる実施例の断面図、第6図は本発明の
更に異なる実施例の平面図である。 1・・・可撓性の絶縁フィルム、2・・・薄膜抵抗体、
3・・・電極、4・・・保護被膜。 第1図 第2図 潟 度 T(0C) 第4図 第5図
1 and 2 are a plan view and a side view, respectively, of a temperature sensor according to the present invention, FIG. 3 is a diagram showing the resistance-temperature characteristics of the temperature sensor according to the present invention, and FIG. 4 is a diagram showing the resistance-temperature characteristics of the temperature sensor according to the present invention. Figure 5 is a diagram showing the relationship between the resistance value and the temperature coefficient of resistance at 30°C with the sputtering input of temperature sensors of the same shape as parameters based on the present invention; FIG. 6 is a plan view of still another embodiment of the invention. 1... Flexible insulating film, 2... Thin film resistor,
3... Electrode, 4... Protective film. Figure 1 Figure 2 Lagoon Degree T (0C) Figure 4 Figure 5

Claims (1)

【特許請求の範囲】 ])耐熱性および耐食性を有する可撓性の絶縁フィルム
の表面に、抵抗温度係数が大きくかつ耐食性の金属から
なる薄膜抵抗体を形成したことを特徴とする温度センサ
。 2、特許請求の範囲第1項に記載の温度センサにおいて
、簿膜抵抗体の材料が白金、金あるいはチタンであるこ
とを特徴とする温度センサ。 3)特許請求の範囲第1項又は第2項に記載の温度セン
サにおいて、可撓性の絶縁フイルムリフエニレンザル7
アイド、ポリフェニレンオキサイド、ポリスルフォンあ
るいはポリテトラフロロエチレンであることを特徴とす
る温度センサ。 4)特許請求の範囲第1項ないし第3項のいずれかに記
載の温度センサにおいて、薄膜抵抗体が可撓性の絶縁フ
ィルムの表面に高周波スパッタリング法で形成されてい
ることを特徴とする温度センサ。 5)特許請求の範囲第1項ないし第6項のいずれかに記
載の温度センサにおいて、薄膜抵抗体が耐食性の保護被
膜で覆われていることを特徴とする温度センサ。
[Scope of Claims] ]) A temperature sensor characterized in that a thin film resistor made of a metal having a large temperature coefficient of resistance and corrosion resistance is formed on the surface of a flexible insulating film having heat resistance and corrosion resistance. 2. The temperature sensor according to claim 1, wherein the material of the film resistor is platinum, gold, or titanium. 3) In the temperature sensor according to claim 1 or 2, a flexible insulating film 7
A temperature sensor characterized in that it is made of polyphenylene oxide, polyphenylene oxide, polysulfone, or polytetrafluoroethylene. 4) The temperature sensor according to any one of claims 1 to 3, characterized in that the thin film resistor is formed on the surface of a flexible insulating film by high-frequency sputtering. sensor. 5) A temperature sensor according to any one of claims 1 to 6, characterized in that the thin film resistor is covered with a corrosion-resistant protective coating.
JP2574484A 1984-02-14 1984-02-14 Temperature sensor Pending JPS60170201A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2574484A JPS60170201A (en) 1984-02-14 1984-02-14 Temperature sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2574484A JPS60170201A (en) 1984-02-14 1984-02-14 Temperature sensor

Publications (1)

Publication Number Publication Date
JPS60170201A true JPS60170201A (en) 1985-09-03

Family

ID=12174329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2574484A Pending JPS60170201A (en) 1984-02-14 1984-02-14 Temperature sensor

Country Status (1)

Country Link
JP (1) JPS60170201A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63211702A (en) * 1987-02-27 1988-09-02 エヌオーケー株式会社 Temperature sensor
JPS63236934A (en) * 1987-03-26 1988-10-03 Yamatake Honeywell Co Ltd Plate type temperature sensor
US7500780B2 (en) 2002-11-05 2009-03-10 Nitto Denko Corporation Flexible wired circuit board for temperature measurement
CN102651575A (en) * 2011-02-28 2012-08-29 三菱综合材料株式会社 Non-contact power supply device provided with temperature sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63211702A (en) * 1987-02-27 1988-09-02 エヌオーケー株式会社 Temperature sensor
JPS63236934A (en) * 1987-03-26 1988-10-03 Yamatake Honeywell Co Ltd Plate type temperature sensor
US7500780B2 (en) 2002-11-05 2009-03-10 Nitto Denko Corporation Flexible wired circuit board for temperature measurement
CN102651575A (en) * 2011-02-28 2012-08-29 三菱综合材料株式会社 Non-contact power supply device provided with temperature sensor
JP2012182258A (en) * 2011-02-28 2012-09-20 Mitsubishi Materials Corp Non-contact power supply device with temperature sensor

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