JPS60167386A - 半導体デバイス - Google Patents
半導体デバイスInfo
- Publication number
- JPS60167386A JPS60167386A JP60000610A JP61085A JPS60167386A JP S60167386 A JPS60167386 A JP S60167386A JP 60000610 A JP60000610 A JP 60000610A JP 61085 A JP61085 A JP 61085A JP S60167386 A JPS60167386 A JP S60167386A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- semiconductor region
- opposing
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 134
- 239000010409 thin film Substances 0.000 claims abstract description 65
- 239000000969 carrier Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 10
- 238000002347 injection Methods 0.000 abstract description 9
- 239000007924 injection Substances 0.000 abstract description 9
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000006798 recombination Effects 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 2
- 239000000284 extract Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 239000003031 high energy carrier Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000005641 tunneling Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000001444 catalytic combustion detection Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000001066 destructive effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 241001062872 Cleyera japonica Species 0.000 description 1
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 206010026749 Mania Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/70—Tunnel-effect diodes
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60000610A JPS60167386A (ja) | 1985-01-07 | 1985-01-07 | 半導体デバイス |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60000610A JPS60167386A (ja) | 1985-01-07 | 1985-01-07 | 半導体デバイス |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12878777A Division JPS5462787A (en) | 1977-10-28 | 1977-10-28 | Semiconductor device and integrated circuit of the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60167386A true JPS60167386A (ja) | 1985-08-30 |
| JPH026224B2 JPH026224B2 (enrdf_load_html_response) | 1990-02-08 |
Family
ID=11478498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60000610A Granted JPS60167386A (ja) | 1985-01-07 | 1985-01-07 | 半導体デバイス |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60167386A (enrdf_load_html_response) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4953383A (enrdf_load_html_response) * | 1972-09-26 | 1974-05-23 | ||
| JPS5176981A (en) * | 1974-12-27 | 1976-07-03 | Fujitsu Ltd | Handotaisochi |
| JPS5458371A (en) * | 1977-09-30 | 1979-05-11 | Westinghouse Electric Corp | Bipolar transistor |
-
1985
- 1985-01-07 JP JP60000610A patent/JPS60167386A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4953383A (enrdf_load_html_response) * | 1972-09-26 | 1974-05-23 | ||
| JPS5176981A (en) * | 1974-12-27 | 1976-07-03 | Fujitsu Ltd | Handotaisochi |
| JPS5458371A (en) * | 1977-09-30 | 1979-05-11 | Westinghouse Electric Corp | Bipolar transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH026224B2 (enrdf_load_html_response) | 1990-02-08 |
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