JPS60166954A - Electrophotographic sensitive body made of selenium - Google Patents
Electrophotographic sensitive body made of seleniumInfo
- Publication number
- JPS60166954A JPS60166954A JP2352584A JP2352584A JPS60166954A JP S60166954 A JPS60166954 A JP S60166954A JP 2352584 A JP2352584 A JP 2352584A JP 2352584 A JP2352584 A JP 2352584A JP S60166954 A JPS60166954 A JP S60166954A
- Authority
- JP
- Japan
- Prior art keywords
- selenium
- inert gas
- sensitive body
- electrophotographic sensitive
- photosensitive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は導電性支持体上に蒸着されたセレン材料からな
る感光層を有する電子写真用セレン感光体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a selenium photoreceptor for electrophotography having a photosensitive layer made of a selenium material deposited on a conductive support.
電子写真に広く用いられるセレン感光体は、アルミニウ
ム等からなる導電性支持体上に、セレン、セレン合金あ
るいはセレン化合物のセレン材料ヲ真空蒸着して製作さ
れる。従来この種の感光体では、電子写真装置でのくり
返し操作の場合の疲労特性、例えば表面電位の低下によ
る複写画偉のコントラストの低下あるいは残留電位の上
昇による画質の低下などの問題があった。残留電位の上
昇の抑制については、例えば不純物あるいは酸化物のセ
レン材料中への添加などが行われ、ある程度の効果が得
られている。しかし表面電位の低下については、めぼし
い抑制策はとられていない。A selenium photoreceptor widely used in electrophotography is manufactured by vacuum-depositing a selenium material such as selenium, a selenium alloy, or a selenium compound onto a conductive support made of aluminum or the like. Conventionally, this type of photoreceptor has had problems such as fatigue characteristics when repeatedly operated in an electrophotographic apparatus, such as a decrease in the contrast of a copied image due to a decrease in surface potential, or a decrease in image quality due to an increase in residual potential. In order to suppress the increase in residual potential, for example, impurities or oxides have been added to the selenium material, and some effects have been obtained. However, no significant measures have been taken to suppress the decrease in surface potential.
本発明は、これに対してくり返し疲労特性、特に表面電
位の低下が抑制された電子写真用セレン感光体を提供す
ることを目的とする。In view of this, it is an object of the present invention to provide a selenium photoreceptor for electrophotography in which repeated fatigue properties, particularly reduction in surface potential, are suppressed.
本発明による電子写真用セレン感光体は、真空粒状セレ
ン材料を蒸発させ、導電性支持体上に蒸着してなる感光
層を有することにより上記の目的を達成する。The selenium photoreceptor for electrophotography according to the present invention achieves the above object by having a photosensitive layer formed by vacuum evaporating granular selenium material and depositing it on a conductive support.
従来、例えばセ°レンーテルル合金からなる感光層を有
する感光体を製造するには、市販の5.5重量%のTe
を含むSe合金を400℃に加熱して1Torrで蒸留
し、器壁に付着した液体を大気中に集めてインゴットに
する。このインゴットを大気中で380℃に加熱して再
融解し、水中に滴下して粒状セレン−テルル合金を作成
し、この粒状セレン−テルル合金を蒸発源に入れて蒸発
させ、支持体上に感光層を蒸着していた。これに対して
本発明の実施例では・粒状セレン−テルル合金を作成す
るのに、真空蒸留後の液体セレン−テルル合金のインゴ
ットへの凝固、再融解、粒状化をすべて窒素雰囲気中で
同様の温度で行った。Conventionally, in order to produce a photoreceptor having a photosensitive layer made of a selenium-tellurium alloy, commercially available 5.5% by weight Te
The Se alloy containing Se alloy is heated to 400°C and distilled at 1 Torr, and the liquid adhering to the vessel wall is collected into the atmosphere and made into an ingot. This ingot is heated to 380°C in the air to remelt it and dropped into water to create a granular selenium-tellurium alloy.The granular selenium-tellurium alloy is placed in an evaporation source and evaporated, and then exposed to light on a support. layers were deposited. On the other hand, in the embodiment of the present invention, in order to create a granular selenium-tellurium alloy, the liquid selenium-tellurium alloy after vacuum distillation is solidified into an ingot, remelted, and granulated in a similar manner in a nitrogen atmosphere. I went with the temperature.
このように従来方法と異なる実施例により作成した材料
と比較のため従来方法によって作成した材料台40ット
について、材料中の5e02を赤外分光によって分析し
た。赤外分光分析においては、76QCIIL ヒータ
(Te02)と250 cnt (Se 8 ring
)の強度より次の式で算出した。As described above, 5e02 in the material was analyzed by infrared spectroscopy for 40 t of material prepared by the conventional method for comparison with the material prepared by the example different from the conventional method. For infrared spectroscopy, a 76QCIIL heater (Te02) and a 250 cnt (Se 8 ring
) was calculated using the following formula.
第1表にこの様にして測定した従来法および本発明の実
施例による材料の酸化度を示す。Table 1 shows the oxidation degree of the materials measured by the conventional method and the examples of the present invention.
第 1 表
第1表より本発明の実施例により得られた材料の酸化度
は、従来法に比してばらつきが少なく、10以下の低い
値であることが分かる。Table 1 It can be seen from Table 1 that the degree of oxidation of the materials obtained by the examples of the present invention has less variation than that of the conventional method, and is a low value of 10 or less.
次にこれらの8種類の材料を蒸発源に入れてアルミニウ
ム感光体基体上に真空蒸着した。基体温度は約ω℃、圧
力は10 Torr *蒸発源温度は340℃で約ωμ
mの厚さの電荷輸送層を得た。次にこの上へSe −5
,5重量%Teと同様に従来法および本発明により窒素
雰囲気中で作成された5e−12重量%Te合金を蒸着
原料として厚さ5μmの電荷発生層を積層した。このよ
うにして従来法の蒸着原料を用いた4本の感光体A−1
,A−2,A−3,A−4および本発明の実施例の4本
の感光体B −1、B −2、B −3、B −4を得
た。Next, these eight types of materials were placed in an evaporation source and vacuum-deposited onto the aluminum photoreceptor substrate. Substrate temperature is approximately ω℃, pressure is 10 Torr *Evaporation source temperature is approximately ωμ at 340℃
A charge transport layer with a thickness of m was obtained. Then on top of this Se -5
, 5 wt % Te, a 5e-12 wt % Te alloy prepared in a nitrogen atmosphere by the conventional method and the present invention was used as a vapor deposition raw material to form a charge generating layer with a thickness of 5 μm. In this way, four photoconductors A-1 were produced using conventional vapor deposition raw materials.
, A-2, A-3, and A-4, and four photoreceptors B-1, B-2, B-3, and B-4 of Examples of the present invention were obtained.
次にこれらの感光体の温度特性ならびに疲労特性の評価
を行った。Next, the temperature characteristics and fatigue characteristics of these photoreceptors were evaluated.
(1)温度特性の評価
温度特性の評価は、第1図に示すように表面電位の温度
依存曲線における2点による。各感光体の温度を20
”Cから上昇させて得た2点の温度を第2表に示す。(1) Evaluation of temperature characteristics Evaluation of temperature characteristics is based on two points on the temperature dependence curve of surface potential as shown in FIG. The temperature of each photoreceptor is 20
Table 2 shows the temperatures at two points obtained by raising the temperature from ``C''.
第2表
第2表に示すように本発明の実施例による感光体の方が
温度特性が良好で、温度上昇に対し安定であることが分
かる。As shown in Table 2, it can be seen that the photoreceptors according to the examples of the present invention have better temperature characteristics and are more stable against temperature increases.
(2)疲労特性の評価
8本の感光体を複写機において1000回の電子写真プ
ロセスのくり返しを行い、1〜5回目ト1000回後の
差により帯電低下量をあられした。そのほかくり返し後
の半減衰露光量および残留電位を測定した。第3表はそ
の結果を示す。(2) Evaluation of Fatigue Characteristics Eight photoreceptors were subjected to the electrophotographic process 1000 times in a copying machine, and the amount of charge reduction was calculated based on the difference after the 1st to 5th 1000 times. In addition, the half-attenuation exposure amount and residual potential after repetition were measured. Table 3 shows the results.
第 3 表
第3表から分かるように、本発明によるセレン−テルル
合金感光体の方が帯電低下についての疲労特性が良好で
あり、他の特性は従来の蒸着原料を用いた感光体の差が
ない。このような特性の改善は蒸着原料の酸化度が少な
いことによるものと推定される。Table 3 As can be seen from Table 3, the selenium-tellurium alloy photoreceptor according to the present invention has better fatigue characteristics in terms of charge reduction, and other characteristics are different from photoreceptors using conventional vapor deposition materials. do not have. It is presumed that this improvement in properties is due to the low degree of oxidation of the vapor deposition raw material.
同様に、5e−Te合金以外の純Se、 Se化合物に
ついても酸素に触れないように窒素雰囲気中で作成した
蒸着原料を用いて形成した感光層を有するセレン感光体
において、疲労特性の改善が見られた。Similarly, for pure Se and Se compounds other than 5e-Te alloys, improvements in fatigue properties were observed in selenium photoreceptors with photosensitive layers formed using vapor deposition raw materials prepared in a nitrogen atmosphere so as not to come into contact with oxygen. It was done.
〔発明の効果]
得られた酸化度の少ないセレン材料を蒸着原料として電
子写真用感光体の感光層を形成して疲労特性を改善する
もので、例えば機能分離型のセレン−テルル合金感光層
を有する感光体においては、実際の複写プロセスにおけ
る帯電低下量が、従来の空気中で作成された蒸着原料を
用いた感光体に子写真用感光体では、くり返しによるコ
ピー画像品質が低下せず、常にきわめて鮮明な画像を得
ることができる。[Effect of the invention] The obtained selenium material with a low degree of oxidation is used as a vapor deposition raw material to form a photosensitive layer of an electrophotographic photoreceptor to improve fatigue characteristics. For example, a functionally separated selenium-tellurium alloy photosensitive layer is formed. In contrast to conventional photoconductors using evaporation raw materials made in air, the photoconductor used for secondary photography does not reduce the quality of copied images due to repeated repetitions, and is always Extremely clear images can be obtained.
第1図は本発明の効果を知るための感光体の温度特性評
価方法を示す表面電位の温度依存線図である。
9晶
第1FFIG. 1 is a temperature dependence diagram of surface potential showing a method for evaluating temperature characteristics of a photoreceptor in order to understand the effects of the present invention. 9th crystal 1st floor
Claims (1)
セレン材料を不活性ガス雰囲気中で処理して作成された
粒状セレン材料を蒸発させ、導電性支持体上に蒸着して
なる感光層を有することを特徴とする電子写真用セレン
感光体。1) It has a photosensitive layer formed by evaporating a granular selenium material created by treating a liquid selenium material having a predetermined composition obtained by vacuum distillation in an inert gas atmosphere and depositing it on a conductive support. A selenium photoreceptor for electrophotography characterized by the following.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2352584A JPS60166954A (en) | 1984-02-09 | 1984-02-09 | Electrophotographic sensitive body made of selenium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2352584A JPS60166954A (en) | 1984-02-09 | 1984-02-09 | Electrophotographic sensitive body made of selenium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60166954A true JPS60166954A (en) | 1985-08-30 |
Family
ID=12112857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2352584A Pending JPS60166954A (en) | 1984-02-09 | 1984-02-09 | Electrophotographic sensitive body made of selenium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60166954A (en) |
-
1984
- 1984-02-09 JP JP2352584A patent/JPS60166954A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3973960A (en) | Electrophotographic element having a selenium layer containing arsenic in varying concentrations across the layer thickness | |
US2863768A (en) | Xerographic plate | |
JPS60166954A (en) | Electrophotographic sensitive body made of selenium | |
US4601965A (en) | Photosensitive material for use in electrophotography | |
JPS60166953A (en) | Manufacture of vapor deposition source selenium material of photosensitive layer | |
US4894307A (en) | Processes for preparing and controlling the fractionation of chalcogenide alloys | |
JPS59223436A (en) | Photosensitive body of selenium-tellurium alloy | |
US4415642A (en) | Electrophotographic member of Se-Te-As with halogen | |
JPH0151182B2 (en) | ||
JPS60252353A (en) | Electrophotographic sensitive senlenium and selenium photosensitive film and its manufacture | |
JPS59166960A (en) | Electrophotographic sensitive material | |
JPS6064357A (en) | Electrophotographic sensitive body made of selenium | |
JPH0217019B2 (en) | ||
US4615964A (en) | Vapor-deposited film of selenium as photoreceptor for electrophotography and process for producing the same | |
JPS60252354A (en) | Electrophotographic sensitive selenium and selenium photosensitive film and its manufacture | |
JP2574485B2 (en) | Method for controlling crystallization of chalcogenide alloys | |
EP0383445A1 (en) | Processes for preparing chalcogenide alloys | |
JPS6120046A (en) | Photosensitive body for electrophotography | |
JPS6348558A (en) | Electrophotographic sensitive body | |
JPH02171756A (en) | Vacuum evaporation source container of photosensitive body for electrophotography | |
JPS59121051A (en) | Electrophotographic sensitive body | |
JPS60252357A (en) | Electrophotographic sensitive selenium and selenium photosensitive film and its manufacture | |
JPS6254270A (en) | Electrophotographic sensitive body | |
JPS62111256A (en) | Electrophotographic sensitive body | |
JPH073596B2 (en) | Electrophotographic photoreceptor and method for manufacturing the same |