JPS60163357A - Ion implantation device - Google Patents

Ion implantation device

Info

Publication number
JPS60163357A
JPS60163357A JP1885684A JP1885684A JPS60163357A JP S60163357 A JPS60163357 A JP S60163357A JP 1885684 A JP1885684 A JP 1885684A JP 1885684 A JP1885684 A JP 1885684A JP S60163357 A JPS60163357 A JP S60163357A
Authority
JP
Japan
Prior art keywords
lead
out electrodes
ionization chamber
ion
extraction electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1885684A
Other languages
Japanese (ja)
Inventor
Masao Nojiri
野尻　倭夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1885684A priority Critical patent/JPS60163357A/en
Publication of JPS60163357A publication Critical patent/JPS60163357A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns

Abstract

PURPOSE:To correct the disturbance of the electric fields caused by electrification of an insulating material formed on the surfaces of lead-out electrodes by independently connecting lead-out electrodes, installed facing an ion production chamber, to power supplies. CONSTITUTION:An ion implantation device is constituted of an ionization chamber and lead-out electrodes 4 and 4' facing the ionization chamber. A compound gas 5 containing ionic atoms is ionized in an ionization chamber 2 by heating a filament 3. The ionized gas is then led out from an opening 7 and passed through the opening 8 of the lead-out electrodes 4 and 4' by means of an electric field formed by applying electric potentials to the ionization chamber 2 and the lead-out electrodes 4 and 4'. As a result, it is possible to equalize the intensities of electric fields formed between the ionization chamber 2 and the lead-out electrodes 4 and 4' by independently applying electric potentials to the lead-out electrodes 4 and 4'. Consequently, it is possible to lead out ions efficiently by correcting the disturbance of the electric fields caused by electrification of an insulating material formed on the electrode surface.

Description

【発明の詳細な説明】 本発明はイオン注入装置に側するものである。[Detailed description of the invention] The present invention relates to an ion implanter.

〔従来技術〕[Prior art]

イオン注入装置は、所望のイオンを生成するだめのイオ
ン生成室を備えている。イオン生成室は中空の箱により
一般的には円筒状空間として形成され、内部に熱電子放
出用フィラメントを備えている。イオンは、イオンとな
る原子を含む化合物ガスをイオン生成室に導入し、フィ
ラメントからの熱電子と衝突を繰返すことによって、生
成される。The ion implantation device includes an ion generation chamber for generating desired ions. The ion generation chamber is generally formed as a cylindrical space by a hollow box, and is equipped with a filament for emitting thermionic electrons inside. Ions are generated by introducing a compound gas containing atoms to become ions into an ion generation chamber and repeatedly colliding with hot electrons from a filament.

イオン生成室で生成したイオンはイオン生成箱と、これ
と対向して配置されている引出し電極とにより形成され
る電場により、イオン生成箱に設けられだ開孔部より引
出され、同時に該電場によりエネルギーを与えられ、さ
らに引出し電極に設けられた開孔部を通過してイオン注
入に供される。The ions generated in the ion generation chamber are extracted from the opening provided in the ion generation box by an electric field formed by the ion generation box and an extraction electrode placed opposite to the ion generation box, and at the same time, the ions are extracted from the opening provided in the ion generation box. The ion beam is energized, passes through an opening provided in the extraction electrode, and is subjected to ion implantation.

イオン生成室で生成したイオンを効率良く引出し、又、
引出し電極の開孔部を通過させるために、引出し電場は
引出し電極の開孔部にイオンを集中させるような形状に
形成される。そのために、引出し電極はイオン生成箱に
対して凸状の形状をなしている。Efficiently extracts ions generated in the ion generation chamber, and
In order to allow the ions to pass through the opening of the extraction electrode, the extraction electric field is formed in a shape that concentrates the ions at the opening of the extraction electrode. Therefore, the extraction electrode has a convex shape with respect to the ion generation box.

しかしながら、引出し電極の表面は前記化合物ガス、お
よび、イオンの衝突により汚染され、絶縁物化してくる
。However, the surface of the extraction electrode becomes contaminated by collisions with the compound gas and ions, and becomes an insulator.

引出し電極の表面が絶縁物化してくると、引出し電極は
イオン生成箱と引出し電極との幾何学的形状および供給
電位からは決定されず、引出し電極表面の絶縁物の帯電
に影響されるようになる。When the surface of the extraction electrode becomes an insulator, the extraction electrode is no longer determined by the geometric shape of the ion generation box and the extraction electrode and the supplied potential, but is influenced by the charge of the insulator on the surface of the extraction electrode. Become.

このような状態においては、イオンを効率よく引出し電
極開孔部に集中させるような引出し電場を人為的に形成
することは困難になってくる。In such a state, it becomes difficult to artificially create an extraction electric field that efficiently extracts ions and concentrates them in the extraction electrode aperture.

〔発明の目的〕[Purpose of the invention]

本発明は、このような状態においても有効な引出し電場
を人為的に形成する手段を提供するものである。The present invention provides a means for artificially forming an effective extraction electric field even under such conditions.

〔発明の構成〕[Structure of the invention]

従来引出し電極は、一体の導体で形成されており、その
電位も一種類であった。そこで、本発明は引出し電極を
二分割し、それぞれ独立に電位を供給することによって
、絶縁物の帯電による電場の乱れを補正し、常に有効な
引出し電場を形成するようにしたことを特徴とするイオ
ン注入装置である。Conventionally, extraction electrodes have been formed of an integral conductor and have one type of potential. Therefore, the present invention is characterized in that the extraction electrode is divided into two parts and a potential is supplied to each part independently, thereby correcting the disturbance of the electric field due to the charging of the insulator, and forming an effective extraction electric field at all times. It is an ion implanter.

〔実施例〕〔Example〕

次に、図に基づいて本発明の詳細な説明する。 Next, the present invention will be explained in detail based on the drawings.

イオン生成室１内で生成したイオンは、電源９゜１０．
１１によってイオン化箱２と引出し電極４．４′とに電
位を与えその両者間に形成される電場によって開孔部７
を通ってイオン生成室１から引出され、イオンビーム６
となって引出し電極４，４′の開孔部８を通過する。ま
だ３はガス導入パイプ５からの化合物ガヌをイオン化す
るフィラメントである。Ions generated in the ion generation chamber 1 are supplied to a power source 9° 10.
11 applies a potential to the ionization box 2 and extraction electrode 4.4', and the electric field formed between them causes the aperture 7 to
The ion beam 6 is extracted from the ion generation chamber 1 through the
and passes through the openings 8 of the extraction electrodes 4, 4'. 3 is a filament that ionizes the compound GANU from the gas introduction pipe 5.

従来は引出しＫＪＭ４．４’は一体で形成されており、
単一電源により電位が与えられていた。Conventionally, the drawer KJM4.4' was formed in one piece,
Potential was provided by a single power supply.

図に示すＯｎ　＜　、本発明は、引出し電極を２つの引
出し電＠４と引出し電極４′とに分割し、それぞれ独立
した電源１０、電源１１よシ独立に電位を供給すること
により、イオン化箱２と引出し電極４・、又イオン化箱
２と引出し電極４・′とによって形成される電場を同一
強度にするようにしたものである。On<, as shown in the figure, the present invention divides the extraction electrode into two extraction electrodes @ 4 and 4', and supplies potentials independently to the respective independent power sources 10 and 11, thereby forming an ionization box. The electric fields formed by the ionization box 2 and the extraction electrode 4.2 and the ionization box 2 and the extraction electrode 4.' are made to have the same strength.

捷だ２つの引出し電極４．４′との間にはイオンを通過
させる開孔部８が形成されている。An opening 8 through which ions pass is formed between the two extraction electrodes 4 and 4'.

これによってイオンビーム６は、引出し電極４側、又は
引出し電極４′側に偏向されることなく、常に開孔部８
を通過し得るように位置決めされ、有効にイオン注入に
供される。As a result, the ion beam 6 is not deflected toward the extraction electrode 4 side or the extraction electrode 4' side, and the ion beam 6 is always directed to the opening 8.
is positioned so that it can pass through the ion beam, and is effectively used for ion implantation.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明は引出し電極を二分割し、
各電極にそれぞれ独立した電位を与えるようにしたので
、引出し電極表面に形成される絶縁物の帯電による乱れ
を補正して、有効な引出し電場を形成することができ、
したがって、イオンを効率良く引出してイオン注入に供
することができる効果を着するものである。As explained above, the present invention divides the extraction electrode into two,
Since independent potentials are applied to each electrode, it is possible to correct disturbances caused by charging of the insulator formed on the surface of the extraction electrode and form an effective extraction electric field.
Therefore, it is possible to efficiently extract ions and use them for ion implantation.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例を示す構成図である１−イオ
ン生成室、２・・・イオン生成箱、３・・フィラメント
、４　引出しＫｌ！、　４’−引出し電極、５・・ガス
導入バイブ、６・イオンビーム、７−・開孔部、８・・
・開孔部、９・・・電源、ｌＯ・電源、１１・・電源。 特許出願人　日本電気株式会社 第１図FIG. 1 is a configuration diagram showing an embodiment of the present invention. 1--Ion generation chamber, 2--Ion generation box, 3--Filament, 4--Drawer Kl! , 4'-Extraction electrode, 5...Gas introduction vibe, 6-Ion beam, 7--Opening part, 8...
・Opening part, 9...Power supply, 1O・Power supply, 11...Power supply. Patent applicant: NEC Corporation Figure 1

Claims (1)

【特許請求の範囲】[Claims] （１）イオン生成室を形成するイオン生成箱と対をなし
、イオン引出湯を形成する引出し電極において、該引出
し電極を二分割し、それぞれに独立した電源を備えたこ
とを特徴とするイオン注入装置。(1) Ion implantation characterized in that in an extraction electrode that forms a pair with an ion generation box forming an ion generation chamber and forms an ion extraction hot water, the extraction electrode is divided into two parts, each of which is provided with an independent power source. Device.
JP1885684A 1984-02-03 1984-02-03 Ion implantation device Pending JPS60163357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1885684A JPS60163357A (en) 1984-02-03 1984-02-03 Ion implantation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1885684A JPS60163357A (en) 1984-02-03 1984-02-03 Ion implantation device

Publications (1)

Publication Number Publication Date
JPS60163357A true JPS60163357A (en) 1985-08-26

Family

ID=11983176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1885684A Pending JPS60163357A (en) 1984-02-03 1984-02-03 Ion implantation device

Country Status (1)

Country Link
JP (1) JPS60163357A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63261652A (en) * 1987-04-20 1988-10-28 Hitachi Ltd Ion beam generator
JPH04130715U (en) * 1991-05-20 1992-11-30 吉田工業株式会社 lipstick container

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63261652A (en) * 1987-04-20 1988-10-28 Hitachi Ltd Ion beam generator
JPH04130715U (en) * 1991-05-20 1992-11-30 吉田工業株式会社 lipstick container

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