JPS60159724A - Production for optical controller - Google Patents

Abstract

PURPOSE:To eliminate influences of a stray capacity between electrodes and to extend the pitch of arrangement of hot-side electrodes to connect lead wires easily and firmly by arranging hot-side electrodes and earth electrodes alternately and operating individual optical shutters independently of one another. CONSTITUTION:Hot-side lead electrodes 25 and earth lead electrodes 26 are formed alternately on a transparent base material 7 and are connected to electrodes 9a and 9b of PLZT minute elements 8 respectively. In this case, electrodes 25 and 26 face each other, and optical shutters 5 are formed between them. One ends of electrodes 26 are connected to common earth electrodes 27 and 28 and electrodes 27 and 28 are connected by the base material 7. A connection land 25a is formed in the other end of each electrode 25 as one body.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a light control device using an electro-optic crystal.

BACKGROUND TECHNOLOGY AND PROBLEMS Electro-optic crystals that exhibit optical anisotropy effects upon voltage application, such as transparent ceramic PLZT ((Pb, La)
-(Zr%T i )05 ) rotates the plane of polarization of incident polarized light in accordance with the applied voltage. Therefore, the PLZT placed between the polarizer and the analyzer combined in crossed Nicol state controls the passage of polarized light incident from the polarizer according to the electrical signals supplied to the PI and ZT. It operates as a light control device, ie a light shutter. Since such optical shutters have a fast response speed, they are configured as an optical shutter array in which a plurality of optical shutters are arranged one-dimensionally, and are expected to be applied to high-speed printers (e.g. electrophotographic printers), high-brightness projectors, etc. ing.

Conventionally, as an optical shutter array using transparent PLZT, the present applicant previously proposed a parallel electric field type optical shutter array as shown in FIG. As shown in the figure, in this type of optical shutter array, PLZT micro elements 8 are arranged at a predetermined pitch on a transparent base 7 made of, for example, a transparent glass substrate, and electrodes 9a, 9b are arranged on opposite sides of each micro element 8. Each electrode 9a, 9b is connected to a lead electrode 10.11i for supplying an electric signal to the element 8, and the lead electrode 10.11 is separated from each adjacent lead electrode by a groove 12. are doing.

Such a planar electric field type optical shutter array is configured such that a sampling pulse P is commonly applied to the gate electrode G from the terminal 4. A predetermined voltage is selectively applied to the drain electrode of each FET according to a signal. In the case shown, the first and sixth FETs from the left have 10
A voltage of 0V is applied, and a voltage of OV is applied to the second PET. Also, the electrode 9a and electrode 9b of each element 8
An optical shutter 5 having a width W is formed between the two. Linear polarized light 6 having a width W shown by an imaginary line is incident on a continuous surface including each shutter 5 from the front side of the paper perpendicularly to the paper.

In the above configuration, when a sampling pulse P is applied to the terminal 4, the FIT to which a voltage of 1oov is applied becomes conductive, and this voltage is applied to the corresponding electrode 9a. As a result, an electric field E is generated in the corresponding portion of the optical shutter 5 as shown by the dotted line, and the plane of polarization is rotated by this electric field E. As a result, the analyzer placed on the output side of the optical shutter array (on the back side of the page) blocks the transmitted light of the optical shutter 5 whose polarization plane has been rotated, and only the transmitted light of the optical shutter 5 whose polarization plane has not been rotated is blocked. It passes through this analyzer.

Therefore, transmitted light corresponding to signal information can be obtained from this analyzer. Note that the sampling pulse P is applied after a floating period T.

In the above-mentioned parallel electric field type optical shutter array, stray capacitance C is formed between adjacent electrodes 10 and between FETs and single wires, and this stray capacitance C causes crosstalk between adjacent optical shutters 5. This may cause malfunction. That is, since the capacitor C is charged at the moment the floating period begins after the sampling pulse P is applied to the terminal 4, the potential of the electrode 10 connected to the FET to which the voltage of QV is applied increases. As a result, the optical shutter 5 will malfunction.

In order to eliminate the influence of this capacitance C, it is possible to perform low impedance driving by continuously applying a voltage to the terminal 41, but with this method, the driving current continues to flow, resulting in a significant increase in power consumption. For this reason, a floating drive method is used in which the sampling pulse P is applied after a floating period T. Note that floating drive is also suitable for performing halftone optical modulation.

Also, an electrode 9a of a parallel electric field type optical shutter array.

Since the electrodes 9b and 10.11 are formed at a pitch of, for example, 100 μm, it becomes very difficult to connect the lead wires, and it is not possible to sufficiently increase the connection strength.

Purpose of invention It is something to do.

SUMMARY OF THE INVENTION The present invention relates to a method of manufacturing an optical shutter array having a t-pole pattern in which hot-side electrodes and ground electrodes are alternately arranged on both sides of an optical crystal. This eliminates the influence of stray capacitance and makes it possible to double the arrangement pitch of the hot-side electrodes compared to the conventional one.

Embodiment FIG. 3 shows an embodiment of the electrode structure of a parallel electric field type optical shutter array manufactured according to the present invention.

In the figure, hot side lead electrodes 25 and ground lead electrodes 26 are alternately formed to form an electrode 9 of a PLZT micro element 8.
a and 9b, respectively. In this case, electrode 2
5 (!: 26) are opposed to each other, and an optical shutter 5 is formed between them. One end of the ground electrode 26 is commonly connected to a common ground electrode 27, 28, and these azeotropic ground electrodes 27 and 28 are connected at locations not shown on the transparent substrate 7. Also, a connection land 25a is integrally formed at the other end of the hot side electrode 25.

FIG. 4 shows a state in which a drive circuit is connected to the optical shutter array of FIG. 6.

In this state, a ground electrode 26 is interposed between each hot-side electrode 25, and a ground potential is also interposed between lead wires connected to each FgT, so that one end of the stray capacitance C is grounded. This allows each party shutter 5 to operate completely independently of each other, and the influence of C on the storage capacity can be eliminated. Further, the pitch of the hot side electrodes 25 is twice the pitch of the electrodes 10.11 in FIG.

Next, an embodiment of the method of manufacturing the optical shutter array of FIG. 6 according to the present invention will be described in conjunction with FIG. 5.

First, 1.86 mm thick plain glass is 10 mm x
A 60 mm piece was cut out and polished to produce a glass substrate 60 having a substantially trapezoidal cross section as shown in FIG.

This substrate 30 has an elongated horizontal surface filter Oa at the center of its upper surface and slopes 30b and 30C on both sides thereof, which were formed by polishing the upper surface of the substrate 30 with an alumina abrasive having a grain size of A-1500.

Next, Cr(50oX) -A is applied to the slopes 30b and 30C.
After forming an electrode layer by vapor depositing u (4000A),
By applying a photoresist layer and performing phosphorography such as exposure and phenomenon, the electrodes 25, 26, 27, .
A substrate with electrodes as shown in FIG. 5B was prepared by forming an electrode pattern consisting of 28 electrodes.

A T wafer 61 is prepared. Then, as shown in FIG.
After printing and baking 2, the other surface of the wafer 31 was fixed to a glass plate 63 with wax 34. In this state, use a diamond cutter to cut the acid-resistant layer 1 from above the resist 62.
A first strip-shaped PLZT element 35 having a length of 2 mm x a width of 0.2 mm x a height of 0.3 mm (=thickness of the wafer 31) as shown in the figure was created.

While fixing this strip-shaped PLZT element 65 to the glass plate 33 with wax 34, HF0.1% by weight HNO31,
5 times at room temperature in an etching aqueous solution containing
The sample was immersed for a minute, and the cut surface obtained by the first cutting was etched. Thereafter, the acid-resistant resist 32 is removed, the strip-shaped PLZT element 65 is taken up from the wax 64, washed, dried, and then placed on both longitudinally opposite sides (20 mm x 0.
A second strip-shaped PLZT element 37 shown in FIG.

Next, the electrode-equipped substrate of FIG.
It is cut into a size of 60 mm x 60 mm to form a substrate 38 with electrodes. Next, the strip-shaped PLZ is placed on the horizontal surface 30a of this substrate 38.
The T element 37 is held, and a transparent adhesive Lens Bond (trade name) is adhered thereto as shown in FIG. Next, a phenol-based acid-resistant resist 40 was applied to the upper surface of the PLZT element 67 and baked.

Next, a second cut was made using a diamond cutter (blade thickness 25 μm) at a cut pitch of 100 μm from the lateral direction of the PLZT element 37 to a depth of 20 μm below the surface of the glass substrate, and a plurality of pieces were cut as shown in FIG. A PLZT micro element 8 was formed. A groove 41 is then formed between each element 8 by a cutter.

Each of the PLZT microelements 8 coated with an acid-resistant resist 40 was placed in an etching aqueous solution having the same composition as above at room temperature.
After dipping for a minute, the cut surface of the PLZT microelement 8 produced by the second cutting was etched. after that,
The acid-resistant resist 40 was removed, washed, and dried. In this way, a parallel electric field type optical shutter array was obtained which can be used as a light control device in which PLZT fine elements 8 as shown in the figure are arranged in one dimension.

According to the above manufacturing process, since a glass substrate having a trapezoidal cross section is used, the cutting operation is easily performed when cutting the groove 41 with a cutter to create the micro element 8 in the process shown in FIG. 5H. be able to. That is, the groove 41 is cut by inserting the cutter into the glass substrate from the horizontal direction.
LZT elements can be cut.

Since the groove 41 can be shortened, the spanene that forms the electrode pattern on the substrate becomes wider, and the life of the cutter becomes longer. Note that instead of using a trapezoidal glass substrate, as shown in FIG.
4 to form a substantially trapezoidal shape.

As shown in FIG. 7, a glass substrate 46 having a rectangular cross section can also be cut by lowering a cutter 47 from above.

Effects of the Invention The optical shutter array obtained by the present invention has hot-side electrodes and ground electrodes arranged alternately, so each shutter can be operated independently, and stray capacitance between electrodes such as crosstalk can be reduced. effect can be eliminated. Furthermore, since the arrangement pitch of the hot-side electrodes is twice that of the conventional one, connection of the lead wires is facilitated, and the connection strength can be sufficiently increased.

[Brief explanation of drawings]

Figure 1 is a perspective view of a conventional parallel electric field type optical shutter array.
2 is a diagram showing an example of a drive circuit, FIG. 6 is a plan view of a main part of a parallel electric field type optical shutter array obtained by the method of the present invention, FIG. 4 is a diagram showing an example of a drive circuit, and FIG. 5 is a diagram showing an example of a drive circuit. is the 6th
6 is a side view showing another embodiment of the manufacturing process, and FIG. 7 is a side view showing still another embodiment of the manufacturing process. be. In addition, in the symbols used in the drawings, 25......Hot side electrode 26...
......Ground electrodes 27, 28...Common ground electrode 30...Glass substrate 35...
......first strip-shaped PLZT element 36a,
36b-! Pole layer 37... Second strip-shaped PLZT element filter 8... Substrate with electrode 39...
・・・・・・・・・Silver paste 41・・・・・・・・・
...It's a groove. Agent Katsu Ueya n Bao Yoshiki Figure 1 Figure 2 Figure 3 Figure 4 G Figure 5 C 2 Figure 6 λ

Claims (1)

[Claims] A first common electrode in which a plurality of electrodes are arranged in two rows facing each other, and every other electrode in one row is connected in common, and the electrodes in the other row are connected in common. a step of forming on a transparent substrate a second common electrode that commonly connects an electrode different from the electrode connected to the first common electrode and an opposite electrode; forming electrode layers on both sides; bonding the electro-optic crystal provided with the electrode layers to the center of the row of the plurality of electrodes on the transparent substrate; a step of connecting electrodes; and a step of cutting the electro-optic crystal so that the electro-optic crystal adhered to the transparent substrate is formed into a plurality of elements and a pair of electrodes are connected to both sides of each element. A method of manufacturing a light control device comprising: