JPS60157269A - ＧａＡｓ太陽電池およびその製造方法 - Google Patents

ＧａＡｓ太陽電池およびその製造方法

Info

Publication number
JPS60157269A
JPS60157269A JP59012557A JP1255784A JPS60157269A JP S60157269 A JPS60157269 A JP S60157269A JP 59012557 A JP59012557 A JP 59012557A JP 1255784 A JP1255784 A JP 1255784A JP S60157269 A JPS60157269 A JP S60157269A
Authority
JP
Japan
Prior art keywords
layer
gaas
conductivity type
solar cell
xas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59012557A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0434834B2 (enrdf_load_stackoverflow
Inventor
Sumio Matsuda
純夫 松田
Kotaro Mitsui
三井　興太郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Space Development Agency of Japan
Mitsubishi Electric Corp
Original Assignee
National Space Development Agency of Japan
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Space Development Agency of Japan, Mitsubishi Electric Corp filed Critical National Space Development Agency of Japan
Priority to JP59012557A priority Critical patent/JPS60157269A/ja
Publication of JPS60157269A publication Critical patent/JPS60157269A/ja
Publication of JPH0434834B2 publication Critical patent/JPH0434834B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Photovoltaic Devices (AREA)
JP59012557A 1984-01-26 1984-01-26 ＧａＡｓ太陽電池およびその製造方法 Granted JPS60157269A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59012557A JPS60157269A (ja) 1984-01-26 1984-01-26 ＧａＡｓ太陽電池およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59012557A JPS60157269A (ja) 1984-01-26 1984-01-26 ＧａＡｓ太陽電池およびその製造方法

Publications (2)

Publication Number Publication Date
JPS60157269A true JPS60157269A (ja) 1985-08-17
JPH0434834B2 JPH0434834B2 (enrdf_load_stackoverflow) 1992-06-09

Family

ID=11808639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59012557A Granted JPS60157269A (ja) 1984-01-26 1984-01-26 ＧａＡｓ太陽電池およびその製造方法

Country Status (1)

Country Link
JP (1) JPS60157269A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4694115A (en) * 1986-11-04 1987-09-15 Spectrolab, Inc. Solar cell having improved front surface metallization
US4698455A (en) * 1986-11-04 1987-10-06 Spectrolab, Inc. Solar cell with improved electrical contacts
JPH0410577A (ja) * 1990-04-27 1992-01-14 Hitachi Cable Ltd ＧａＡｓ系太陽電池の製造方法
RU2607734C1 (ru) * 2015-10-27 2017-01-10 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук СПОСОБ ИЗГОТОВЛЕНИЯ ФОТОЭЛЕМЕНТА НА ОСНОВЕ GaAs

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4694115A (en) * 1986-11-04 1987-09-15 Spectrolab, Inc. Solar cell having improved front surface metallization
US4698455A (en) * 1986-11-04 1987-10-06 Spectrolab, Inc. Solar cell with improved electrical contacts
JPH0410577A (ja) * 1990-04-27 1992-01-14 Hitachi Cable Ltd ＧａＡｓ系太陽電池の製造方法
RU2607734C1 (ru) * 2015-10-27 2017-01-10 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук СПОСОБ ИЗГОТОВЛЕНИЯ ФОТОЭЛЕМЕНТА НА ОСНОВЕ GaAs

Also Published As

Publication number Publication date
JPH0434834B2 (enrdf_load_stackoverflow) 1992-06-09

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