JPS60153562U - semiconductor device - Google Patents

semiconductor device

Info

Publication number
JPS60153562U
JPS60153562U JP16807084U JP16807084U JPS60153562U JP S60153562 U JPS60153562 U JP S60153562U JP 16807084 U JP16807084 U JP 16807084U JP 16807084 U JP16807084 U JP 16807084U JP S60153562 U JPS60153562 U JP S60153562U
Authority
JP
Japan
Prior art keywords
semiconductor device
flow
electric current
constraining
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16807084U
Other languages
Japanese (ja)
Inventor
ロナルド ジヤール ネルソン
バートラム シユワルツ
ベンジヤミン テル
ダニエル ポール ウイルト
Original Assignee
アメリカン テレフオン アンド テレグラフ カムパニ−
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アメリカン テレフオン アンド テレグラフ カムパニ− filed Critical アメリカン テレフオン アンド テレグラフ カムパニ−
Publication of JPS60153562U publication Critical patent/JPS60153562U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本考案の一実施例に従うC3−BH発光デバイス
の等角図である。
The drawing is an isometric view of a C3-BH light emitting device according to an embodiment of the present invention.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 基体中に配置された活性領域を有する半導体材料の基体
と、電流が流れるようになる前記基体への電極と、前記
電流が前記活性領域を貫いて流れるように制約するため
の手段とを含む半導体デバイスにおいて、前記制約手段
は、前記活性領域を含む前記電極間の前記基体を貫く電
流チャネルを、規定する前記本体の高抵抗率F1イオン
領域を含むことを特徴とする半導体デバイス。
A semiconductor comprising a body of semiconductor material having an active region disposed in the body, an electrode to said body through which an electric current can flow, and means for constraining said electric current to flow through said active area. A semiconductor device in which the constraining means includes a high resistivity F1 ionic region of the body defining a current channel through the body between the electrodes including the active region.
JP16807084U 1983-11-07 1984-11-07 semiconductor device Pending JPS60153562U (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54916083A 1983-11-07 1983-11-07
US549160 1983-11-07

Publications (1)

Publication Number Publication Date
JPS60153562U true JPS60153562U (en) 1985-10-12

Family

ID=30771342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16807084U Pending JPS60153562U (en) 1983-11-07 1984-11-07 semiconductor device

Country Status (1)

Country Link
JP (1) JPS60153562U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63122189A (en) * 1986-11-11 1988-05-26 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63122189A (en) * 1986-11-11 1988-05-26 Fujitsu Ltd Semiconductor device

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