JPS60149773A - Ｃｖｄ膜の形成方法 - Google Patents
Ｃｖｄ膜の形成方法Info
- Publication number
- JPS60149773A JPS60149773A JP516984A JP516984A JPS60149773A JP S60149773 A JPS60149773 A JP S60149773A JP 516984 A JP516984 A JP 516984A JP 516984 A JP516984 A JP 516984A JP S60149773 A JPS60149773 A JP S60149773A
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- ultrafine powder
- cvd
- furnace
- material gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title description 3
- 239000000843 powder Substances 0.000 claims abstract description 38
- 239000002994 raw material Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 20
- 238000007747 plating Methods 0.000 claims description 19
- 150000002736 metal compounds Chemical class 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 4
- -1 metal compound salt Chemical class 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 28
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 229910002804 graphite Inorganic materials 0.000 abstract description 2
- 239000010439 graphite Substances 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910003465 moissanite Inorganic materials 0.000 abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 2
- 239000011882 ultra-fine particle Substances 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 1
- 229910003074 TiCl4 Inorganic materials 0.000 abstract 1
- 229910009035 WF6 Inorganic materials 0.000 abstract 1
- 229910007932 ZrCl4 Inorganic materials 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 abstract 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 abstract 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000002131 composite material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002920 hazardous waste Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP516984A JPS60149773A (ja) | 1984-01-13 | 1984-01-13 | Ｃｖｄ膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP516984A JPS60149773A (ja) | 1984-01-13 | 1984-01-13 | Ｃｖｄ膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60149773A true JPS60149773A (ja) | 1985-08-07 |
| JPH05470B2 JPH05470B2 (enrdf_load_stackoverflow) | 1993-01-06 |
Family
ID=11603732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP516984A Granted JPS60149773A (ja) | 1984-01-13 | 1984-01-13 | Ｃｖｄ膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60149773A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61106769A (ja) * | 1984-10-30 | 1986-05-24 | Mitsubishi Electric Corp | 気相反応を利用した自己潤滑性硬質被膜形成装置 |
| JPH02240263A (ja) * | 1989-03-15 | 1990-09-25 | Ulvac Corp | 磁性微小物体混入化学蒸着方法と装置 |
| US5672382A (en) * | 1985-12-24 | 1997-09-30 | Sumitomo Electric Industries, Ltd. | Composite powder particle, composite body and method of preparation |
| US7854962B2 (en) * | 2002-08-23 | 2010-12-21 | Tokyo Electron Limited | Gas supply method using a gas supply system |
| CN110182841A (zh) * | 2018-11-22 | 2019-08-30 | 中国科学院过程工程研究所 | 一种低温介稳流态化工艺制备TiOxCyNz包覆粉体的系统及方法 |
-
1984
- 1984-01-13 JP JP516984A patent/JPS60149773A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61106769A (ja) * | 1984-10-30 | 1986-05-24 | Mitsubishi Electric Corp | 気相反応を利用した自己潤滑性硬質被膜形成装置 |
| US5672382A (en) * | 1985-12-24 | 1997-09-30 | Sumitomo Electric Industries, Ltd. | Composite powder particle, composite body and method of preparation |
| JPH02240263A (ja) * | 1989-03-15 | 1990-09-25 | Ulvac Corp | 磁性微小物体混入化学蒸着方法と装置 |
| US7854962B2 (en) * | 2002-08-23 | 2010-12-21 | Tokyo Electron Limited | Gas supply method using a gas supply system |
| CN110182841A (zh) * | 2018-11-22 | 2019-08-30 | 中国科学院过程工程研究所 | 一种低温介稳流态化工艺制备TiOxCyNz包覆粉体的系统及方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05470B2 (enrdf_load_stackoverflow) | 1993-01-06 |
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