JPS60141697A - Manufacture of diamond diaphragm - Google Patents

Manufacture of diamond diaphragm

Info

Publication number
JPS60141697A
JPS60141697A JP58244776A JP24477683A JPS60141697A JP S60141697 A JPS60141697 A JP S60141697A JP 58244776 A JP58244776 A JP 58244776A JP 24477683 A JP24477683 A JP 24477683A JP S60141697 A JPS60141697 A JP S60141697A
Authority
JP
Japan
Prior art keywords
thin film
diamond
base body
diaphragm
thermal conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58244776A
Other languages
Japanese (ja)
Other versions
JPS6357399B2 (en
Inventor
Kunio Imai
邦男 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp, Pioneer Electronic Corp filed Critical Pioneer Corp
Priority to JP58244776A priority Critical patent/JPS60141697A/en
Publication of JPS60141697A publication Critical patent/JPS60141697A/en
Publication of JPS6357399B2 publication Critical patent/JPS6357399B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond

Abstract

PURPOSE:To obtain a beautiful diamond diaphragm which is used for a speaker without strains and damages, etc. by growing a diamond thin film in a vapor phase on a base body having heat resistance and low thermal conductivity, and heating the contact surface between the thin film and the base body to release the thin film. CONSTITUTION:A diaphragm-shaped base body 1 is made of a material having heat resistance and low thermal conductivity such as Mo and silicon. The base body 1 is placed in an electric furnace, etc., and a diamond thin film 4 is grown on the base body 1 by passing a gaseous mixture 2 of hydrocarbon and hydrogen, and heating with a heater 3 provided above the base body 1. After cooling, a heating beam of light from an infrared lamp or a heater 5 is irradiated and transmitted through the thin film 4 to heat the surface of the base body 1. At this time, the temp. of the base body 1 is not so much elevated as the temp. of the thin film 4 having low thermal conductivity is elevated. The thin film 4 is thermally expanded due to the temp. difference, and released from the base body 1 to obtain the diamond diaphragm.

Description

【発明の詳細な説明】 本発明は、スピーカの振動板の形状としたダイヤモンド
薄膜の振動板の製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a diamond thin film diaphragm shaped like a speaker diaphragm.

従来からスピーカ用の振動板として各社の素材が使用さ
れて来たが、高剛性の振動板の素材としてはへリリウム
、ホロン化チタン、アルミナ系セラミック、チタン、ア
ルミニウム等が使用されている。
Conventionally, materials from various companies have been used as diaphragms for speakers, and materials such as helium, titanium holonide, alumina ceramic, titanium, and aluminum are used as materials for highly rigid diaphragms.

又、ダイヤモンドを使用した振動板としてはダイヤモン
1−の微粒子をニッケル等の金属で結合したものもある
Further, as a diaphragm using diamond, there is also one in which fine particles of diamond 1 are bonded with a metal such as nickel.

これ等の振動板のうち、金属を素材として使用したもの
は、金属の薄い板を金型でプレスしたり、振動板の形状
をした基板に蒸着法で金属薄膜を形成した後、基板を薬
品で溶かし、或いは全体を加熱しておいてから急冷して
金属薄膜を剥離する等の方法がとられていた。
Among these diaphragms, those that use metal as a material are made by pressing a thin metal plate with a mold, or by forming a thin metal film on a diaphragm-shaped substrate by vapor deposition, and then applying chemicals to the substrate. Methods used include melting the metal, or heating the entire body and then rapidly cooling it to peel off the metal thin film.

しかしながら、プレス成型は金属)炒の厚さを成る程度
以下とすることはできず、皺ができ易く、且つ成型歪が
残り、不規則振動の原因となっていた。
However, press molding cannot reduce the thickness of the metal layer to a certain level or less, and wrinkles tend to form, and molding distortion remains, causing irregular vibrations.

又、前記全体を加熱しておいてから急冷する方法では、
全体が同し温度になるため伸びの差が少く、剥離がうま
くゆかない欠点がある。
In addition, in the method of heating the whole and then rapidly cooling it,
Since the entire surface is at the same temperature, there is little difference in elongation, which makes peeling difficult.

更に、ダイヤモンドの微粒子をニッケル等の金属で結合
したものは、比重が大きくなり、ダイヤモンドの4り性
が生かせない欠点があった。
Furthermore, those in which diamond fine particles are bonded with a metal such as nickel have a disadvantage that the specific gravity becomes large and the four-sidedness of diamond cannot be utilized.

本発明は、透明で高剛性のダイヤモンドを振動板の形状
に形成し、それによって振動板の性能を向上すると共に
、ダイヤモンISの輝きによる美化が可能なダイヤモン
ド振動板を提供し、以って従来の振動板の欠点を除去せ
んとすることを目的とするダイヤモンド振動板の製造方
法である。
The present invention provides a diamond diaphragm in which a transparent and highly rigid diamond is formed into the shape of a diaphragm, thereby improving the performance of the diaphragm, and which can beautify with the brilliance of the diamond IS. This method of manufacturing a diamond diaphragm aims to eliminate the drawbacks of the diaphragm.

以下、本発明の実施例を図面について説明する。Embodiments of the present invention will be described below with reference to the drawings.

モリブデン、シリコン、セラミック等のような1000
℃以上の耐熱性を有し、しかも熱膨張率の小さい材料で
、第1図のような振動板形状の基体lを作成する。
1000 like molybdenum, silicon, ceramic etc.
A base 1 in the shape of a diaphragm as shown in FIG. 1 is made of a material that has heat resistance above .degree. C. and has a small coefficient of thermal expansion.

この基体1の振動板を形成する表面には、同心円状、或
いは放射線方向、又はランダムに数μ程度の凹凸を形成
しである。
The surface of the base 1 forming the diaphragm is provided with concavities and convexities of approximately several microns concentrically, in the radial direction, or randomly.

700℃〜1000 ’Cの電気か巾に基体1を置き、
この上に1気圧以下でゆっくりと炭化水素及び水素の混
合ガス2を流し、このガスを更に基体1の上に配設した
ヒータ3で加熱して高温化すると、基体1上には膜状に
ダイヤモンド薄膜4が生長してくる。
Place the substrate 1 in an electric field at 700°C to 1000'C,
A mixed gas 2 of hydrocarbons and hydrogen is slowly flowed over this at a pressure of 1 atm or less, and when this gas is further heated to a high temperature with a heater 3 disposed above the base 1, a film is formed on the base 1. The diamond thin film 4 grows.

このように生長したダイヤセン1−゛薄膜4が形成され
た基体1を取り出し、一度冷却した後に赤外線ランプ又
はヒータ5をダイヤセン1薄膜4側から照射すると、ダ
イヤモンF−′f!、膜4は透明であるため、前記光線
はダイヤモンド薄膜4を通過し、基体1の表面を加熱す
る。
When the substrate 1 on which the Diacene 1-' thin film 4 that has grown in this manner is taken out and once cooled, an infrared lamp or heater 5 is irradiated from the Diacene 1 thin film 4 side, a Diamond F-'f! Since the film 4 is transparent, the light beam passes through the diamond film 4 and heats the surface of the substrate 1.

この加熱による熱は基体1が熱伝導率が低いため基体1
の温度はそれ程に上昇せず、ダイヤモンド薄膜4の方が
熱伝導率が高いためダイヤモンド薄膜4ば温度」二昇す
る。
The heat due to this heating is absorbed by the base 1 because the base 1 has a low thermal conductivity.
The temperature of the diamond thin film 4 does not rise that much, and since the diamond thin film 4 has a higher thermal conductivity, the temperature of the diamond thin film 4 rises by 2.

例えば、ダイヤモンド薄膜4と、基体1をモリブデンで
形成した時では、熱伝導率、熱膨張率は熱伝導率w /
 cm ’C熱膨張率X 10−6/ ’Cダイヤモン
ド 6.60 .1.0 モリブデン 1.35 5.0 と異っているため、昇温したダイヤモンド薄膜4は熱膨
張を起し、上記差によって基体1から剥離し、ダイヤモ
ンド振動板が形成できるものである。
For example, when the diamond thin film 4 and the base 1 are made of molybdenum, the thermal conductivity and thermal expansion coefficient are the thermal conductivity w/
cm 'C coefficient of thermal expansion X 10-6/'C Diamond 6.60. 1.0 Molybdenum 1.35 5.0 Therefore, the heated diamond thin film 4 undergoes thermal expansion and peels off from the base 1 due to the above difference, forming a diamond diaphragm.

即ぢ、気相成長法により厚さ10〜50μに形成したダ
イヤモンド薄膜4は脆いため、基体1から剥離する際に
、機械的な手段では破mしてしまう。
In other words, the diamond thin film 4 formed to a thickness of 10 to 50 μm by vapor phase growth is brittle and will break if mechanically used when it is peeled off from the base 1.

又、冷熱の急激な変化で剥離しようとしても、ダイヤモ
ンド薄膜4に応力を残してしまうので、ダイヤモンド薄
膜4を破損してしまう公算が大である。
Furthermore, even if an attempt is made to separate the diamond thin film 4 by a sudden change in temperature, stress will remain in the diamond thin film 4, and there is a high possibility that the diamond thin film 4 will be damaged.

これに対し、前記実施例では、ダイヤモンド薄膜4の透
明な性質を利用して、熱光線により基体1の表面を加熱
し、この熱をダイヤモンド振動板膜4には伝達させて、
ダイヤモン)・の熱伝導率が良いためダイヤモンド薄膜
4を全体が均一に温度上昇させ、一方基体1は熱伝導率
が低い為に温度上昇せず、熱膨張に差が生じることによ
ってダイ薄膜ン1′薄欣4が基体1から剥離するもので
ある。
On the other hand, in the embodiment described above, the transparent property of the diamond thin film 4 is utilized to heat the surface of the base body 1 with heat rays, and this heat is transmitted to the diamond diaphragm film 4.
Due to the good thermal conductivity of diamond), the temperature of the entire diamond thin film 4 rises uniformly, while the temperature of the substrate 1 does not rise due to its low thermal conductivity, and due to the difference in thermal expansion, the temperature of the die thin film 4 rises uniformly. 'The thin film 4 is peeled off from the base 1.

そして、基体10表面には、数μの凹凸を同心円状、放
射線状、或いはランダムに形成しであるので、ダイヤモ
ンド薄11*4は表面にこれと反対の凹凸が形成され、
外部からの光線が当るとダイヤモンド特有の輝きを放つ
こととなる。
Since the surface of the base body 10 is formed with concavities and convexities of several micrometers concentrically, radially, or randomly, the diamond thin layer 11*4 has concavities and convexities opposite to these formed on the surface.
When exposed to external light, it emits a diamond-like brilliance.

このようにして形成されたダイヤモンド振動板は、ダイ
ヤモンドの剛性が大きく、E= 33X 10”dyn
 /cm、 P = 3.5 ’2、音速で9700m
 / vcと現在の材料中ではベリリウムの12000
 m / setに次いで大きいので、広帯域スピーカ
を得ることができる。
The diamond diaphragm formed in this way has a high rigidity of diamond, and has an E = 33X 10”dyn
/cm, P = 3.5'2, 9700m at the speed of sound
/vc and 12,000 of beryllium among current materials.
Since it is the second largest after m/set, a wideband speaker can be obtained.

尚、ダイヤモンド薄膜の形成は、前記気相成長法の他に
、蒸着法も使用でき、同様な方法で剥離が行なわれる。
Incidentally, in addition to the above-mentioned vapor phase growth method, a vapor deposition method can also be used to form the diamond thin film, and the diamond thin film can be peeled off using the same method.

このように、本発明に拠る時には純粋のダイヤモンド振
動板が得られるので、ダイヤモンドの剛性により広18
域のスピーカとすることができる。
As described above, since a pure diamond diaphragm can be obtained according to the present invention, the rigidity of diamond allows for a wide
It can be used as a speaker in the area.

そして、スピーカの最も目につく部分に、このダイヤモ
ンド振動板が位置するので、他から光線や、スピーカ内
部に組み込んだ光源からの光線によって、ダイヤモンド
特有の輝きを放つため、大きなデザイン効果が得られる
Since this diamond diaphragm is located in the most visible part of the speaker, it emits the unique shine of a diamond when exposed to light from other sources or from a light source built into the speaker, resulting in a great design effect. .

このようなダイヤモンド振動板をその脆さにも拘らず本
発明は製造できるものであって、しかも基体から残留歪
や、その他破損の原因を内■15に残すことなく、確実
に剥離して、製造できるものである。
Despite the fragility of such a diamond diaphragm, the present invention is capable of manufacturing it, and moreover, it can be reliably peeled off from the base without leaving any residual strain or other causes of damage. It can be manufactured.

【図面の簡単な説明】[Brief explanation of drawings]

図面は本発明の実施の一例を示すもので、第1図は基体
の側面図、第2図は気相成長時、第3図は加熱時、第4
図はその一部の拡大を、第5図はこれによって製造され
たダイヤモン1”振動板の断面図である。 1・・・基体、2・・・混合ガス、3・・・ヒータ、4
・・・ダイヤモンドin!、5・・・ヒータ。 特許出願人 パイオニア株式会社
The drawings show an example of the implementation of the present invention; FIG. 1 is a side view of the substrate, FIG. 2 is a view during vapor phase growth, FIG. 3 is during heating, and FIG.
The figure is an enlarged view of a part of it, and Figure 5 is a cross-sectional view of a diamond 1" diaphragm manufactured thereby. 1...Base body, 2...Mixed gas, 3...Heater, 4
...Diamond in! , 5... Heater. Patent applicant Pioneer Corporation

Claims (1)

【特許請求の範囲】[Claims] 振動板形状に形成したモリブデン、セラミック等の10
00℃以上の而(熱性を有すると共に、熱伝導率の小さ
い素材の基体上に、気相成長法によりダイヤモンド薄膜
を形成した後、赤外線等の加熱光線でダイヤモンド薄膜
と基体の接触面を加熱して熱伝導率の差によってダイヤ
モノ1薄膜と基体の熱膨張に差を生じさせ、この熱膨張
の差によって基体からダイヤモンド薄膜を剥離すること
を特徴とするダイヤモンド振動板の製造方法。
10 made of molybdenum, ceramic, etc. formed into the shape of a diaphragm
00℃ or above (after forming a diamond thin film by vapor phase growth on a substrate made of a material that has thermal properties and low thermal conductivity, the contact surface between the diamond thin film and the substrate is heated with heating light such as infrared rays). A method for producing a diamond diaphragm, characterized in that a difference in thermal expansion is created between the Diamond Mono 1 thin film and the base due to the difference in thermal conductivity, and the diamond thin film is peeled from the base based on this difference in thermal expansion.
JP58244776A 1983-12-27 1983-12-27 Manufacture of diamond diaphragm Granted JPS60141697A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58244776A JPS60141697A (en) 1983-12-27 1983-12-27 Manufacture of diamond diaphragm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58244776A JPS60141697A (en) 1983-12-27 1983-12-27 Manufacture of diamond diaphragm

Publications (2)

Publication Number Publication Date
JPS60141697A true JPS60141697A (en) 1985-07-26
JPS6357399B2 JPS6357399B2 (en) 1988-11-11

Family

ID=17123742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58244776A Granted JPS60141697A (en) 1983-12-27 1983-12-27 Manufacture of diamond diaphragm

Country Status (1)

Country Link
JP (1) JPS60141697A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0398257A2 (en) * 1989-05-18 1990-11-22 Yamaha Corporation A speaker diaphragm
JPH0385099A (en) * 1989-08-29 1991-04-10 Kenwood Corp Diaphragm for speaker and its manufacture
US5071708A (en) * 1987-10-20 1991-12-10 Showa Denko K.K. Composite diamond grain
US5110579A (en) * 1989-09-14 1992-05-05 General Electric Company Transparent diamond films and method for making
US5130111A (en) * 1989-08-25 1992-07-14 Wayne State University, Board Of Governors Synthetic diamond articles and their method of manufacture
US5180571A (en) * 1990-05-30 1993-01-19 Idemitsu Petrochemical Company Limited Process for the preparation of diamond
US5264071A (en) * 1990-06-13 1993-11-23 General Electric Company Free standing diamond sheet and method and apparatus for making same
JPH0891992A (en) * 1994-09-28 1996-04-09 Toyo Kohan Co Ltd Production of diamond-coated brazed product
US5523121A (en) * 1992-06-11 1996-06-04 General Electric Company Smooth surface CVD diamond films and method for producing same
GB2413234A (en) * 2004-04-15 2005-10-19 B & W Loudspeakers Diamond diaphragms for loudspeaker drive units or microphones
JP2015523952A (en) * 2012-05-28 2015-08-20 エレメント シックス テクノロジーズ リミテッド Free-standing nonplanar polycrystalline synthetic diamond component

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5071708A (en) * 1987-10-20 1991-12-10 Showa Denko K.K. Composite diamond grain
WO1993013015A1 (en) * 1987-10-20 1993-07-08 Kunio Komaki Composite diamond grains and process for their production
EP0398257A2 (en) * 1989-05-18 1990-11-22 Yamaha Corporation A speaker diaphragm
US5130111A (en) * 1989-08-25 1992-07-14 Wayne State University, Board Of Governors Synthetic diamond articles and their method of manufacture
JPH0385099A (en) * 1989-08-29 1991-04-10 Kenwood Corp Diaphragm for speaker and its manufacture
US5110579A (en) * 1989-09-14 1992-05-05 General Electric Company Transparent diamond films and method for making
US5180571A (en) * 1990-05-30 1993-01-19 Idemitsu Petrochemical Company Limited Process for the preparation of diamond
US5349922A (en) * 1990-06-13 1994-09-27 General Electric Company Free standing diamond sheet and method and apparatus for making same
US5264071A (en) * 1990-06-13 1993-11-23 General Electric Company Free standing diamond sheet and method and apparatus for making same
US5523121A (en) * 1992-06-11 1996-06-04 General Electric Company Smooth surface CVD diamond films and method for producing same
JPH0891992A (en) * 1994-09-28 1996-04-09 Toyo Kohan Co Ltd Production of diamond-coated brazed product
GB2413234A (en) * 2004-04-15 2005-10-19 B & W Loudspeakers Diamond diaphragms for loudspeaker drive units or microphones
GB2413234B (en) * 2004-04-15 2007-09-12 B & W Loudspeakers Diaphragms for loudspeaker drive units or microphones
EP1757160B1 (en) * 2004-04-15 2010-05-19 B & W Group Ltd. Diamond diaphragms for loudspeaker drive units or microphones
JP2015523952A (en) * 2012-05-28 2015-08-20 エレメント シックス テクノロジーズ リミテッド Free-standing nonplanar polycrystalline synthetic diamond component
US9210972B2 (en) 2012-05-28 2015-12-15 Element Six Technologies Limited Free-standing non-planar polycrystalline synthetic diamond components and method of fabrication

Also Published As

Publication number Publication date
JPS6357399B2 (en) 1988-11-11

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