JPS60126872A - Semiconductor photodetector and manufacture thereof - Google Patents
Semiconductor photodetector and manufacture thereofInfo
- Publication number
- JPS60126872A JPS60126872A JP58234529A JP23452983A JPS60126872A JP S60126872 A JPS60126872 A JP S60126872A JP 58234529 A JP58234529 A JP 58234529A JP 23452983 A JP23452983 A JP 23452983A JP S60126872 A JPS60126872 A JP S60126872A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- substrate
- light
- guard ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 239000012298 atmosphere Substances 0.000 claims abstract description 5
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 15
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052753 mercury Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 229910052793 cadmium Inorganic materials 0.000 abstract description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011261 inert gas Substances 0.000 abstract description 2
- VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 229910004613 CdTe Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 244000291564 Allium cepa Species 0.000 description 1
- 235000002732 Allium cepa var. cepa Nutrition 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（ａｔ 発明の技術分野
本発明は半導体受光装置、特にテルル死水銀カドミウム
ン半導体材料として広い波長範囲の赤外線について優れ
た特性を有するアバランシエフオニ・トダイオードと、
テルル化水銀カドミウムの物性に即したその製造方法に
関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a semiconductor light-receiving device, particularly an avalanche onion diode which has excellent characteristics in the infrared rays over a wide wavelength range as a tellurium-dead mercury-cadmium semiconductor material;
This invention relates to a method for producing mercury cadmium telluride in accordance with its physical properties.
（ｂｌ 技術の背景
赤外線領域の光半導体装置に適する材料としてテルル化
水銀カドミウム（Ｈｇ１−ｘＣｄｘＴｅ）が知られてい
る。この３元化合物において水銀およびカドミウムはテ
ルルと化合してあたかも１元素のように作用して擬似２
元素特性を示す。すなわち大きいエネルギギャップ幅（
Ｅｇ中１．６ｅｖ）’ｖ有する半導体であるＣｄＴｅと
、負のエネルギギャップ幅（Ｅｇ二０．３ ｅ Ｖ ）
ン有する半金属であるＨｇＴｅとからなるＨｇｘ−ｘＣ
ｄｘＴｅはＣｄＴｅのモル分率Ｘにほぼ比例するエネル
ギギャップ幅を有する。(bl Technology background) Mercury cadmium telluride (Hg1-xCdxTe) is known as a material suitable for optical semiconductor devices in the infrared region.In this ternary compound, mercury and cadmium are combined with tellurium, as if they were one element. acting pseudo 2
Indicates elemental properties. That is, a large energy gap width (
CdTe is a semiconductor with a negative energy gap width (Eg20.3 e V)
Hgx-xC consisting of HgTe, a metalloid with
dxTe has an energy gap width approximately proportional to the mole fraction X of CdTe.
この特性によりて、前記モル分率ｘＹ選択して波長約１
乃至３０〔μ展〕の範囲において任意の波長帯域の赤外
線を対象とする光半導体材料とすることができる。Due to this characteristic, the mole fraction xY is selected and the wavelength is approximately 1
The optical semiconductor material can be used as a target for infrared rays in any wavelength band in the range of 30 μm to 30 μm.
ｆｃｌ 従来技術と問題点
光信号’ｖｔ気信号に変換する場合に受光素子としてア
バランシェフォトダイオード（以下ＡＰＩＩ）＆略称す
る）を用いることによってその信号対［−比乞大きくす
ることができる。すなわちＡＰＤにおいては入射した光
によって形成されるキャリアを強電界で加速し、なだれ
降伏ン発生させることによって電流増倍が行なわれ、そ
の結果ＡＰＤに続く増幅回路における信号対雑音比が改
善される。fcl Prior Art and Problems When converting an optical signal into an optical signal, the signal can be significantly increased by using an avalanche photodiode (hereinafter referred to as APII) as a light receiving element. That is, in an APD, current multiplication is performed by accelerating carriers formed by incident light with a strong electric field to generate avalanche breakdown, and as a result, the signal-to-noise ratio in the amplifier circuit following the APD is improved.
ＨｇＣｄＴｅＹ九半導体材料とするＡＰＤとして、キャ
リア濃度が２ Ｘ １０１５（ｍ−３）程度であるＰ型
ＨｇＣｄＴｅ半導体基板に硼素（ＢＩＹ ２００ （Ｋ
ｅＶ）程度でイオン注入してｎ十Ｐ接合を形成し、こ
れに保護絶縁膜及び電極乞配設する構造が既に知られて
いる。しかしながらこのようなＡＰＤにおいては電極間
に逆バイアス電圧が印加される動作時にｎ＋型領領域周
辺で局部的に高電界が形成さ第１てマイクロプラズマが
発生し、−洩れ電流が増加してＡＰＤ出力出力電信号対
雑音比が像下するなどの問題があり、ＨｇＣｄＴｅ系Ａ
ＰＤは未だ実用化されるには到っていない。As an APD using HgCdTeY9 semiconductor material, boron (BIY 200 (K
A structure is already known in which an n0P junction is formed by ion implantation at a voltage of about eV), and a protective insulating film and electrodes are provided thereon. However, in such an APD, during operation when a reverse bias voltage is applied between the electrodes, a high electric field is locally formed around the n+ type region, firstly micro plasma is generated, and - leakage current increases, causing the APD to There are problems such as a lower output electric signal-to-noise ratio, and HgCdTe type A
PD has not yet been put into practical use.
従来知られているシリコン（Ｓｉ）、ゲルマニウム（Ｇ
ｅ ）或いは砒化ガリウム（ＧａＡｓ ） 、燐化イン
ジウム（ＩｎＰ）等の半導体材料ン用いてＡ、ＰＤ ’
ｆ影形成る場合には、受光領域の周縁における高電界の
形成ケ防止するガードリング領域を受光領域と同様に例
えば不純物のイオン注入によって形成することが可能で
あって、これによってマイクロプラズマの生成や洩れ電
流の増加を防止している。Conventionally known silicon (Si) and germanium (G)
e) Or A, PD' using semiconductor materials such as gallium arsenide (GaAs) and indium phosphide (InP).
In the case of f-shading, it is possible to form a guard ring region at the periphery of the light-receiving region to prevent the formation of a high electric field in the same manner as the light-receiving region, for example by implanting impurity ions, thereby preventing the generation of microplasma. This prevents leakage current from increasing.
しかるにＨｇＣｄＴｅにおいてはイオン注入の ドーズ
量を選択することによってそのキャリア濃度を制御する
ことは不可能である。すなわち例えばＰ型ＨｇｃｄＴｅ
単結晶にＢ＋イオンを注入する際に、そのドーズ量ビＩ
ｏ１３乃至１０” 〔ｃｍ−”）程度の範囲で変化させ
ても加熱処理後キャリア濃度が３乃至５ ｘ １０１８
（ｍ ”）とほぼ一定値のｎｆｉとなる。However, in HgCdTe, it is impossible to control the carrier concentration by selecting the ion implantation dose. That is, for example, P-type HgcdTe
When implanting B+ ions into a single crystal, the dose amount BiI
Even if the carrier concentration is changed within the range of o13 to 10"[cm-"], the carrier concentration after heat treatment is 3 to 5 x 1018
(m''), which is an almost constant value nfi.
またドーズ量を１０１２〔α−勺程度とすれば導電型及
びキャリア濃度は変化しない。なおこれはイオン注入に
よって生ずる結晶欠陥によってキャリア濃度が決定され
るためであると考えられている。Further, if the dose is set to approximately 1012 [α-1], the conductivity type and carrier concentration do not change. It is believed that this is because the carrier concentration is determined by crystal defects caused by ion implantation.
前記の如き事情からＨｇＣｄＴｅ系ＡＰＤにガードリン
グを設けるためには、先に述べた如き他の半導体材料と
は異なるこのＩｆ ｇ Ｃｄ Ｔ ｅ に即した手段が
必をとなる。Due to the above-mentioned circumstances, in order to provide a guard ring in the HgCdTe-based APD, it is necessary to use a means that is compatible with If g Cd Te, which is different from other semiconductor materials as described above.
（ｄｉ 発明の目的
本発明は波長約１乃至３０〔μｍ〕の範囲において最適
のエネルギギャップ幅が選択され、かつ良好な効果が得
られるガードリングを備えた半導体受光装置ケ提供する
ことを目的とする。(di) Purpose of the Invention The purpose of the present invention is to provide a semiconductor light receiving device equipped with a guard ring that can select the optimum energy gap width in the wavelength range of about 1 to 30 [μm] and obtain good effects. do.
ｆｅｌ 発明の構成
本発明の前記目的は、ｐ型テルル化水銀カドミウム基体
に形成され、該基体とｐｎ接合を形成するｎ型受光領域
と、該ｎ型受光領域の周縁に形成され、該ｎ型受光領域
よりキャリア濃度が小なるｎ型ガードリング領域とを備
えてなる半導体受光装置により達成される。fel Structure of the Invention The object of the present invention is to provide an n-type light-receiving region formed on a p-type mercury cadmium telluride substrate and forming a p-n junction with the substrate; This is achieved by a semiconductor light-receiving device comprising an n-type guard ring region whose carrier concentration is lower than that of the light-receiving region.
前記の半導体受光装置は、ｐ型テルル化水銀カドミウム
基体に不純物イオンケ選択的に注入し、加熱処理７行な
ってｎ型受光領域を形成する工程と、水銀蒸気ン含む雰
囲気中において加熱処理を行ない、該基体に選択的に水
銀を導入する工程とン含み、該ｎ型受光領域の周縁にｎ
型ガードリング領域を形成する製造方法により実現する
ことができる。The semiconductor light receiving device described above includes the steps of selectively implanting impurity ions into a p-type mercury cadmium telluride substrate, performing seven heat treatments to form an n-type light receiving region, and performing heat treatment in an atmosphere containing mercury vapor. a step of selectively introducing mercury into the substrate, and a step of selectively introducing mercury into the substrate;
This can be realized by a manufacturing method that forms a mold guard ring region.
濃度ｉ ｘ １０１６（ｃｍ ３）以下でかつゆるやか
に遷移する接合ンもってｐ展テルル化水銀カドミウム半
導体基体に形成されて、これに囲まれて受光部となるキ
ャリア濃度が１ｘ １ｏ” ８（ｃ＋＋ｒＪ以上の前記
第１のｎ型領域に対して、良好なガードリング効果が得
られる。It is formed in a p-extended mercury cadmium telluride semiconductor substrate with a junction that transitions slowly at a concentration of ix 1016 (cm 3) or less, and is surrounded by a carrier concentration of 1x 1o" 8 (c++rJ or more), which becomes a light receiving part. A good guard ring effect can be obtained for the first n-type region.
（ｆｌ 発明の実施例
以下本発明を実施例により図面を参照して具体的に説明
する。(fl Embodiments of the Invention The present invention will be specifically described below by way of embodiments with reference to the drawings.
第１図ｆａ）乃至（ｄ）は本発明の第１の実施例につい
て、その主要製造工程における状態を示す断面図である
。FIGS. 1fa) to 1(d) are cross-sectional views showing the main manufacturing steps of the first embodiment of the present invention.
第１図（ａ）参照
本実施例においてはキャリア濃度５ ｘ １０”ｊ：ａ
ｍ−３程度のｎ型Ｈｇ１−ｘＣｄｘＴｅ単結晶基板１を
用いる。Refer to FIG. 1(a) In this example, the carrier concentration is 5 x 10"j:a
An n-type Hg1-xCdxTe single crystal substrate 1 of about m-3 size is used.
本実施例は最高感度波長を約１．５５Ｃμｍ〕とするた
めにモル分率ＸＹ約０６７として固体再結晶法によって
成長させた単結晶によってこの基板１を形成している。In this embodiment, the substrate 1 is formed of a single crystal grown by a solid-state recrystallization method with a mole fraction of XY of approximately 067 in order to have a maximum sensitivity wavelength of approximately 1.55 C .mu.m.
前記ｎ型１：ｉ ｇＣｄ Ｔ ｅ基板１に温度約４５０
℃において、時間１００時間程度の加熱処理ン実施する
ことによって、基板１全体にＨｇ空空格子化生成しめて
キャリアａｕｆ２ Ｘ １ ｏ”５（Ｃｍ ’ ）程度
ノル型に変換する。The temperature of the n-type 1: i gCd T e substrate 1 is about 450.
By carrying out a heat treatment at a temperature of about 100 hours, Hg vacancies are generated in the entire substrate 1, and carriers auf2 X 1 o''5 (Cm') are converted into a Nor-type carrier.
第１図ｆｂ）参照
ｐ型に変換され７ＨｇＣｄＴｅ基板１上に例えば、硫化
亜鉛（ＺｎＳ）Ｙ用いて保護膜２Ｚ形成し、ガードリン
グを形成する領域の保護膜２’に選択的に除去する。Refer to FIG. 1fb) A protective film 2Z is formed using, for example, zinc sulfide (ZnS)Y on the 7HgCdTe substrate 1 which has been converted to p-type, and is selectively removed from the protective film 2' in the region where the guard ring is to be formed.
次いで温度約２００ （’Ｏ）の飽和ＨｇＡ気雰気気囲
気中時間の加熱処理ケ行ない、ＨｇＣｄＴｅ基板１の表
出面の近傍にＨｇＹｇ散させて、キャリア濃度が５×１
０１５〔ｃＩｒＬ−３〕程度からゆるやかに減少するｎ
型領域３を形成してガードリングとする。Next, heat treatment is performed for a period of time in a saturated HgA atmosphere at a temperature of about 200 ('O) to scatter HgYg near the exposed surface of the HgCdTe substrate 1, so that the carrier concentration is 5×1.
n gradually decreases from about 015 [cIrL-3]
A mold region 3 is formed to serve as a guard ring.
ｎ影領域の深さは約５μｍである。The depth of the n shadow area is approximately 5 μm.
第１図ｆｃｌ参照
前記保護膜２を除去して新しく保護膜４を形成し、受光
部を形成する領域の保護膜４ン選択的に除去する。Refer to FIG. 1fcl. The protective film 2 is removed, a new protective film 4 is formed, and the protective film 4 is selectively removed in the region where the light receiving section is to be formed.
例えば硼素ｆＢ）イオンをエネルギー２００ （ＫｃＶ
：］程度においてドーズ−１１１１×１０１３乃至１×
１０１５〔ｃｒｎ−２〕程度に注入し、窒素（Ｎ２）或
いは不活性ガス雰囲気中で温度約２００〔“０〕、時間
１０乃至２０分間程度の加熱処理２行なう。この結果光
に述べた如く接合の深さ約１〜２〔μｍ〕、ギヤリア濃
度３乃至５ Ｘ １０”’ （ｃｎｔ−３）程［（７）
ｎ十型受光領域５が形成される。For example, a boron fB) ion with an energy of 200 (KcV
: ] Dose -1111×1013 to 1×
1015 [crn-2], and heat treatment 2 is performed in a nitrogen (N2) or inert gas atmosphere at a temperature of about 200 ["0] for about 10 to 20 minutes. As a result, the bonding is completed as described in the photo. depth of about 1 to 2 [μm], gearia concentration of about 3 to 5 × 10'' (cnt-3) [(7)
An n-type light receiving region 5 is formed.
第１図ｆｄ）参照
前記保＠膜りン除去し、例えばＺｎＳによって受光部コ
ーテイング膜６及び保護絶縁膜７乞設け、金（Ａｕ）系
材料によってｎ１ｉｌｌｌ電極８及びｎ側電極９を配設
する。Refer to Fig. 1 fd) The above-mentioned protective film is removed, and a light receiving part coating film 6 and a protective insulating film 7 are provided using, for example, ZnS, and an n1ill electrode 8 and an n-side electrode 9 are provided using a gold (Au)-based material. .
以上説明した製造方法によって本実施例のＨｇＣｄＴｅ
ＡＰＤｇ子が完成する。なお前記実施例においては先に
ガードリング部を形成し次いで受光部のｎ″−製領域５
ン形成しているが、この工程順を入換えてカードリング
部を後に形成してもよい。The HgCdTe of this example was produced by the manufacturing method explained above.
APD g child is completed. In the above embodiment, the guard ring portion is first formed, and then the n″-made region 5 of the light receiving portion is formed.
However, the order of these steps may be changed to form the card ring portion later.
また前記実施例においてガードリングとするｎ型領域３
を形成して保護膜２を除去した後に、第２図に示す如く
、コーテイング膜及び保護絶縁膜とするＺｎＳ 膜１０
を形成し、ｚｎＳｎＳ膜上０上けたレジスト膜１１に開
口を設けてＢ＋イオン注入７行ない、加熱処理後にＺｎ
Ｓ膜１０に開口を設けてｎ側電極娑配設し、更にｐ側電
極を設ける製造方法によっても、第１図（ｄ）に示した
構造のＨ，ｇＣｄＴｅＡＰＤＹ製造することができる。In addition, in the above embodiment, the n-type region 3 serving as a guard ring
After forming the protective film 2 and removing the protective film 2, as shown in FIG.
was formed, an opening was formed in the resist film 11 overlying the ZnSnS film, seven B+ ions were implanted, and after heat treatment, Zn
H,gCdTeAPDY having the structure shown in FIG. 1(d) can also be manufactured by a manufacturing method in which an opening is provided in the S film 10, an n-side electrode is provided, and a p-side electrode is further provided.
更に第３図は本発明の他の実施例を示す断面図である。Furthermore, FIG. 3 is a sectional view showing another embodiment of the present invention.
本実施例においては半絶縁性テルル化カドミウム（Ｃｄ
Ｔｅ）基板２１上に液相エピタキシャル成長方法等によ
ってｐ型Ｈｇ１−ｘＣｄｘＴｅ層２２Ｔｅ率ば厚さ１０
〔μｍ）程度に成長して、このｐ型）ｉｇｌ−ｘＣｄｘ
Ｔｅ層２２Ｔｅ率発明により前記実施例と同様にガード
リングとするｎｍ領域２３及び受光部のｎ十型領域２５
’！’形成する。次いで絶縁膜２７′Ｐ！ｒ：形成した
後に、受光部全面を被覆するｎ側電極２８と、その外側
のｐ型ＨｇＣｄＴｅ層２２上にｐ側電極２９を配設する
。In this example, semi-insulating cadmium telluride (Cd
Te) A p-type Hg1-xCdxTe layer 22Te with a thickness of 10
[μm], this p-type)igl-xCdx
Te layer 22 Te layer 22 According to the invention, a nm region 23 serving as a guard ring and an n-type region 25 of a light receiving part are formed as in the previous embodiment.
'! 'Form. Next, the insulating film 27'P! r: After forming, a p-side electrode 29 is provided on the n-side electrode 28 covering the entire surface of the light receiving part and the p-type HgCdTe layer 22 on the outside thereof.
本実施例において基板２１に用いたＣｄＴｅはそのエネ
ルギギャップ幅が先に述べた如＜ＨｇＣｄＴｅより太き
（、ＨｇＣｄＴｅ層によって吸収される光に対しては透
明であり、入射光ＹＣｄＴｅ基板２１側より入射させて
ｎ側電極２ Ｂ Ｙ ｎ＋型領領域２５全面に設けるこ
とが可能である。The CdTe used for the substrate 21 in this example has an energy gap width that is wider than that of HgCdTe (as described above), and is transparent to the light absorbed by the HgCdTe layer, so that the incident light is closer to the YCdTe substrate 21 side. It is possible to make the light incident and provide the n-side electrode 2 B Y on the entire surface of the n+ type region 25 .
以上説明した本発明の実施例はその最高感度波長は１．
５５Ｃμｍ〕であり、なだれ降伏電圧は５０乃至ｅｏＭ
程度である。なお本発明の製造方法によってガードリン
グ部のみを形成した試料については、１００Ｉｖ１以上
の耐圧が得られている。The embodiment of the present invention described above has a maximum sensitivity wavelength of 1.
55 Cμm], and the avalanche breakdown voltage is 50 to eoM
That's about it. Note that for a sample in which only the guard ring portion was formed by the manufacturing method of the present invention, a withstand voltage of 100 Iv1 or more was obtained.
本実施例のＡＰＤになだれ降伏電圧の９０チの逆バイア
ス電圧を印加するときの洩れ電流は１×１０ ’ （Ａ
Ａｔ）程度以下であって従来例より大幅に減少している
。また量子効率は７０（イ）程度、電流増倍率は約３０
が得られている。When a reverse bias voltage of 90 degrees, which is the avalanche breakdown voltage, is applied to the APD of this example, the leakage current is 1×10' (A
At) or less, which is significantly reduced compared to the conventional example. In addition, the quantum efficiency is about 70 (a), and the current multiplication factor is about 30.
is obtained.
ｆｇｌ 発明の詳細
な説明した如く本発明によって、ｌ（ｇｌ−ｘＣｄｘＴ
ｅの物性が半導体受光装置に活用されて優れた特性娶有
するアバランシェフォトダイオードＹ提供することがで
き、波長１〔μｍ〕乃至３０〔μｍ〕程度の広い赤外線
領域内の任意の波長帯域についての半導体受光装置の要
求ン満たすことが可能となる。fgl As described in detail, according to the present invention, l(gl-xCdxT
The physical properties of e can be utilized in a semiconductor photodetector to provide an avalanche photodiode with excellent characteristics, and the semiconductor can be used for any wavelength band within the wide infrared region of about 1 [μm] to 30 [μm] wavelength. It becomes possible to meet the requirements of the light receiving device.
第１図（ａｔ乃至（ｄｌは本発明の実施例を示す断面図
、第２図は前記実施例とは異なる製造方法を示す断面図
、第３図は他の実施例を示す断面図である。
図において、１はＨｇｔ ｘＣｄｘＴｅ基板、３及び２
３はｎ型ガードリング領域、５及び２５は県警受光領域
、６はコーティング族、７及び２７は絶縁膜、８及び２
８はｎ側電極、９及び２９はｐ側電極、１０はＺｎＳ膜
、２１は半絶縁性ＣｄＴｅ基板、２２はＨｇ１−ｘＣｄ
ｘＴｅ成長層を示す。
閂
代理人 弁理士 松 岡 宏四部１−
ビ
茅 １ 図FIG. 1 (at to (dl) is a sectional view showing an embodiment of the present invention, FIG. 2 is a sectional view showing a manufacturing method different from the above embodiment, and FIG. 3 is a sectional view showing another embodiment. In the figure, 1 is a HgtxCdxTe substrate, 3 and 2
3 is an n-type guard ring region, 5 and 25 are prefectural police light receiving regions, 6 is a coating group, 7 and 27 are insulating films, 8 and 2
8 is an n-side electrode, 9 and 29 are p-side electrodes, 10 is a ZnS film, 21 is a semi-insulating CdTe substrate, 22 is Hg1-xCd
The xTe growth layer is shown. Barrel Agent Patent Attorney Hiroshi Matsuoka 1-Bi Kaya 1 Diagram
Claims (1)
基体とＰＮ接合を形成するｎ型受光領域と、該ｎ型受光
領域の周縁に形成され、該ｎ型受光領域よりキャリア濃
度が小なるｎ型ガードリング領域とを備えてなることを
特徴とする半導体受光装置。 （２１ＰＷｉテルル化水銀カドミウム基体に不純物イオ
ンを選択的に注入し、加熱処理ン行なってｎ型受光領域
を形成する工程と、水銀蒸気を含む雰囲気中において加
熱処理を行ない、該基体に選択的に水銀ン導入する工程
と７含み、該ｎ型受光領域の周縁にｎ型ガードリング領
域を形成することン特徴とする半導体受光装置の製造方
法。(1) An n-type light-receiving region formed on a P-type mercury cadmium telluride substrate and forming a PN junction with the substrate, and an n-type light-receiving region formed at the periphery of the n-type light-receiving region and having a lower carrier concentration than the n-type light-receiving region. 1. A semiconductor light receiving device comprising: an n-type guard ring region. (A process of selectively implanting impurity ions into a 21PWi mercury cadmium telluride substrate and performing a heat treatment to form an n-type light-receiving region; and a step of selectively implanting impurity ions into the substrate by performing a heat treatment in an atmosphere containing mercury vapor. 7. A method for manufacturing a semiconductor light receiving device, comprising a step of introducing mercury, and forming an n-type guard ring region around the periphery of the n-type light receiving region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58234529A JPS60126872A (en) | 1983-12-13 | 1983-12-13 | Semiconductor photodetector and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58234529A JPS60126872A (en) | 1983-12-13 | 1983-12-13 | Semiconductor photodetector and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60126872A true JPS60126872A (en) | 1985-07-06 |
Family
ID=16972451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58234529A Pending JPS60126872A (en) | 1983-12-13 | 1983-12-13 | Semiconductor photodetector and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60126872A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03143279A (en) * | 1988-09-30 | 1991-06-18 | Rockwell Internatl Corp | Piezoelectric actuator |
-
1983
- 1983-12-13 JP JP58234529A patent/JPS60126872A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03143279A (en) * | 1988-09-30 | 1991-06-18 | Rockwell Internatl Corp | Piezoelectric actuator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3508126A (en) | Semiconductor photodiode with p-n junction spaced from heterojunction | |
| US4127932A (en) | Method of fabricating silicon photodiodes | |
| US4984032A (en) | Semiconductor photodiode | |
| US4141756A (en) | Method of making a gap UV photodiode by multiple ion-implantations | |
| JPH0338887A (en) | Semiconductor photodetector | |
| US5599733A (en) | Method using cadmium-rich CdTe for lowering the metal vacancy concentrations of HgCdTe surfaces | |
| US4034396A (en) | Light sensor having good sensitivity to visible light | |
| Olsen | Low-leakage, high-efficiency, reliable VPE InGaAs 1.0-1.7 µm photodiodes | |
| JPS63955B2 (en) | ||
| US8263966B2 (en) | Photodetector and method for manufacturing photodetector | |
| JPS6155791B2 (en) | ||
| JPS60126872A (en) | Semiconductor photodetector and manufacture thereof | |
| US5804463A (en) | Noble metal diffusion doping of mercury cadmium telluride for use in infrared detectors | |
| JPS5938748B2 (en) | semiconductor photodetector | |
| US5004698A (en) | Method of making photodetector with P layer covered by N layer | |
| JPS61101084A (en) | Manufacture of compound semiconductor light-receiving element | |
| Melchior et al. | Epitaxial silicon n+-p-π-p+ avalanche photodiodes for optical fiber communications at 800 to 900 nanometers | |
| JPS6180875A (en) | Semiconductor device | |
| JPS59149070A (en) | Photodetector | |
| JPH01309387A (en) | Semiconductor photodetecting element | |
| JPS5921195B2 (en) | Visible light receiving element and its manufacturing method | |
| JPS5928071B2 (en) | Light receiving element | |
| JPS60178674A (en) | Manufacture of avalanche photo diode | |
| JPS60173882A (en) | Semiconductor device | |
| JPH0559590B2 (en) |