JPS60124343A - Ion implantation device with rutherford scatter measuring instrument - Google Patents

Abstract

PURPOSE:To obtain an instrument to be used for rutherford scatter analysis during ion implantation by, as a high-frequency four-electrode accelerator, providing an external resonant accelerator capable of switching the kind of accelerated ion through the changing of applied frequencies or arranging plural high-frequency four-electrode accelerators each for exclusive use for a specific kind of ion. CONSTITUTION:A rutherford scattered particles measuring instrument 9 and a multi-channel analyzer 10 are set in an ion implantation chamber, and an external resonant accelerator 5' is used as a high-frequency four-electrode accelerator to supply an electric power to two pairs of opposed electrodes from an independent power source. In this case, it is designed such that, with the use of a frequency-switching regulator 8' and a gas switching device 1'', P<+> ion can be accelerated and implanted during ion implantation, and He ion can be accelerated to hit on the base plate during rutherford scatter analysis, for example.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to an ion implantation device, and more particularly to an implantation device that can simultaneously perform Rutherford scattering analysis during implantation. .

[Background of the invention]

FIG. 1 is a diagram illustrating a conventional ion implantation device.

In conventional ion implantation, an ion beam 1' extracted from an ion source 1 is mass separated by a mass separator 2.
A specific ion species is implanted into the sample substrate 4. Between the mass separator 2 and the sample substrate 4, there is a beam scanning system 3 that scans the beam in the X and Y directions so that the substrate is uniformly implanted.
is provided. On the other hand, in Rutherford scattering analysis, high-speed He ions are applied to a substrate, and the element contained in the substrate is identified and its depth distribution determined from the energy distribution of the He ions that are Rutherford scattered by the elements contained in the substrate. However, since the He ion energy for Rutherford scattering analysis is generally 1 to 3 M e V, the implanted sample must be removed for analysis and transferred to a Rutherford scattering analyzer that uses a He ion beam emitted from a Pandegraaf accelerator or Kotscroft accelerator. I needed to install it. That is.

There was no implantation device that could simultaneously observe the depth distribution of the implanted ion species while performing the ladle. FIG. 2 is a diagram illustrating another conventional example. In FIG. 2, the ion beam 1' extracted from the ion source 1 is accelerated to the M e V region by the high frequency quadruple transverse accelerator 5 and is implanted into the sample substrate 4 by iL. FIG. 3 is a schematic diagram of the high-frequency quadruple transverse accelerator. This accelerator consists of four undulating electrodes, two facing each other.
At the protruding portion of one electrode, the remaining two sets of electrodes are recessed. This accelerator constitutes a type of cavity resonator, and by applying a high frequency electric field of 100 MHz to this, an accelerating electric field is generated in the axial direction, and ions are efficiently accelerated. However, in the case of a conventional resonator structure, only one type of ion species can pass through this accelerator, and the energy after acceleration is also fixed. Therefore, in order to perform Rutherford scattering analysis using He ions in Figure 2, it is necessary to replace the high-frequency quadruple transverse accelerator itself, and in effect, while performing ion implantation, it is necessary to determine the depth of the implanted ion species by Rutherford scattering analysis. It was impossible to know the distribution.

[Purpose of the invention]

An object of the present invention is to provide an apparatus that performs Rutherford scattering analysis during ion implantation, which has conventionally been impossible, and thereby aims to realize an ion implantation apparatus that can obtain an arbitrary implantation depth distribution. It is something.

[Summary of the invention]

In the present invention, as a high-frequency quadruple transverse accelerator for ion implantation, an external resonant accelerator or a high-frequency quadruple transverse accelerator dedicated to a specific ion species is used, in which the accelerated ion species can be switched by changing the applied wave number without changing the structure. Multiple units are lined up, and implantation and Rutherford scattering analysis are performed alternately.

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to FIG. Fourth
In the figure, the high-frequency quadruple transverse accelerator is a six-accelerator using an external resonant accelerator 5', in which power is supplied to two sets of opposing electrodes from independent power sources. In this case, the frequency switching regulator 8' and the gas switching device 1''
During ion implantation, P+ ions were accelerated and implanted, and during Rutherford scattering analysis, He ions were accelerated so that they hit the substrate.

FIG. 5 is a diagram illustrating another embodiment based on the present invention.

In FIG. 5, the beam line is provided with a high frequency quadrupole accelerator 7 for accelerating He ions, as well as a Rutherford scattering particle measuring instrument 9 and a multichannel analyzer 10.

Furthermore, a switching circuit 8 is provided, which switches the valve for the gas flowing into the ion source 1 and the driving type g6' of each accelerator.

Switch 7'. This makes it possible to perform Rutherford scattering analysis while implanting ions by using the resonator 6 for ion implantation, for example P+ implantation, and using the resonator 7 for Rutherford scattering analysis. In this embodiment, in order to minimize the decrease in implantation current, an accelerator near the ion source is used for the implanted ion species (p-F in this case). Note that the implant current is approximately 1 mA for P+. On the other hand, a helium beam current close to 1 mA was obtained during Rutherford scattering analysis, and the analysis time was on the order of several seconds.

FIG. 6 is a diagram illustrating another embodiment based on the present invention. In the figure, a single cap 12 is provided between the resonator 7 and the scanning system 3 for finely adjusting the beam energy. on the other hand,
The depth distribution of the implanted ion species obtained from the energy spectrum of the Rutherford scattering particles is displayed on the display 11, and the voltage applied to the single gap is adjusted using the distribution shape comparator 13 so that the desired distribution shape can be obtained. The amount of implantation in this state was controlled. This makes it possible to vary the implantation distribution while implanting ions, and to change the shape of the distribution at any time.

Next, in the above embodiments, the implantation operation and the Rutherford scattering analysis were performed alternately, so they could not be operated simultaneously. FIG. 7 shows an embodiment in which simultaneous operations can be performed. In this example, two bean lines consisting of an ion source and an accelerator are installed.
One side was used for the ion implanter and the other side was used for Rutherford scattering analysis.

Next is the fourth. In the embodiment shown in FIG. 6, the energy of the implanted ions is from several 100 keV to several MeV because a high frequency quadrupole accelerator is used. Therefore, Rutherford analysis was performed on a conventional driving machine of 100 keV or less. Another embodiment is shown in FIG. In the figure, ions to be implanted (for example, P+) are selected using a 90° deflection magnetic field type mass separator 2' and implanted into a substrate 4.

The beam energy at this time is determined by the accelerating voltage applied to the ion source 1. -The beam line for Carrutherford scattering analysis is arranged as shown in the figure. During the Rutherford scattering measurement, the strength of the magnetic field of the mass separator 2' was set to zero to prevent helium ions from being deflected. In this example, P+ ion implantation was performed at 100 keV or less, and at 1-1 e of 3 M e V during Rutherford scattering analysis.
An ion beam was used. As a result, it has become possible to use Razafo 1-Failure analysis in combination with Ion 11 inclusion even with conventional implanting machines.

〔Effect of the invention〕

According to the present invention, Rutherford scattering analysis can be performed during ion implantation, and the two implanted ions 11 can be implanted to have any desired depth distribution shape, which has great practical effects.

[Brief explanation of drawings]

Figure 1 is a diagram explaining a conventional example of a driving device, Figure 2 is a diagram explaining another conventional example of a driving device, Figure 3 is a schematic structural diagram of a high frequency quadrupole accelerator, and Figure 4 is a diagram of the present invention. FIGS. 5 to 8 are diagrams illustrating different embodiments based on the present invention. 1...Ion source, 1'...Ion beam, 1#...
・Gas switching device, 2...Magnetic field type mass separator, 2'・
...90° deflection magnetic field type, mass separator, 3... Beam scanning system, 4... Sample substrate, 5... High frequency quadrupole accelerator, 5'... Outside, partially resonant high frequency quadrupole Heavy pole accelerator, 5"
... External resonance type high frequency quadrupole power supply, 6... High frequency quadrupole accelerator for implanted ion species, 6'... Power supply, 7...
・High frequency quadrupole accelerator for helium ions, 7'...Power source, 8...Switching circuit, 8'...Frequency adjuster, 9...Semiconductor detector, 10...Multi-channel analyzer, 1 display, 12...single cap, multiple times 3, etc. 3 Figure 4 Φ 7 6 /

Claims (1)

[Claims] 1. In an ion implantation apparatus consisting of an ion source, a high-frequency quadruple transverse accelerator, and an implantation chamber, one or more high-frequency quadruple transverse accelerators are provided between the ion source and the implantation chamber. , and is equipped with a switching device for the sample gas introduced into the ion source, and also incorporates a Rutherford scattering measurement device in the implantation chamber to perform ion implantation and Rutherford scattering analysis alternately. The heavy transverse accelerator is an external resonant type accelerator, and a regulator is installed to switch and adjust the frequency applied by the high-frequency quadrupole accelerator for accelerating ion species for ion implantation and the applied frequency for accelerating helium ions for Rutherford scattering. This is an ion implantation device equipped with a Usaford scattering measuring device. 3. A high-frequency quadrupole transverse accelerator for implanting ion species and a high-frequency quadrupole accelerator for helium ions used for Rutherford scattering analysis are arranged in series, and a high-frequency quadrupole accelerator for performing ion implantation and Rutherford scattering analysis alternately. Polar accelerator driving device. 4. The scope of the patent claims that two or more beam lines each consisting of an ion source and a high-frequency quadruple transverse accelerator are provided to simultaneously irradiate a sample substrate with beams, thereby enabling Rutherford scattering analysis without interrupting the implantation operation. An ion implantation device equipped with a Rutherford scattering measurement device according to item 1. 5. A mass separation magnet with a 90° deflection is installed between the sample substrate and the high-frequency quadruple transverse accelerator, and a beam emitted from an ion source for generating implanted ion species is introduced from one end of the magnet, so that the mass-separated I The ion implantation apparatus with a Rutherford scattering measuring device according to claim 1, characterized in that Rutherford scattering analysis is simultaneously performed while implanting an ion beam of M e V or less into a sample substrate.