JPS60119721A - Correction of projecting position at charged beam exposure device - Google Patents

Abstract

PURPOSE:To perform pattern drawing in a high speed and moreover with high precision when a pattern is to be drawn on a sample using a charged beam by transferring continuously the sample by a method wherein the transferred quantity of the sample during the period from the time when the position of the sample is detected up to the time when the beam is projected actually is added to pattern data to be applied to a deflector. CONSTITUTION:A deflector 2 and a stage 3 put on with a sample 5 to be exposed are provided in an electrooptic lens barrel 1, data are read from a pattern memory 7 according to the command of a control computer 6, and the distortion of the sample 5 is corrected by a correction computing circuit 8. Then the position of the sample 5 is corrected by a position correcting circuit 9, the result thereof is sent to a correction computing circuit 12 through a displacement quantity calculating circuit 10 and an adder 11, and output therefrom is applied to the deflector 2 through a D/A converter 13 and an amplifier 14. While, the stage 3 is controlled by a stage control circuit 15 and a stage driving circuit 16 connected to the computer 6, and the position thereof is measured successively by a laser measuring machine 17. At this construction, signal processing time from the circuit 12 up to the deflector 2 is set previously in the circuit 10.

Description

[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a method for correcting the irradiation position of a charged beam exposure device, and in particular, to a sample continuous movement drawing method in which pattern drawing is performed while continuously moving the sample to be exposed. The present invention relates to an irradiation position correction method in a charged beam exposure apparatus.

[Background of the invention]

In a charged beam exposure system using a continuous sample movement drawing method,
Patterns can be drawn in a long and narrow drawing area (referred to as a belt) with a width corresponding to the beam deflection area and a length equivalent to several chip widths during one sample movement period, reducing dead time associated with sample movement. Although it is possible to significantly improve the writing speed by Since this results in an error, it is necessary to take measures such as correcting the trial η position f immediately before beam irradiation. However, since correction calculations for deflection distortion, etc. must be performed based on information on the position of the sample 4, it is actually impossible to perform beam irradiation immediately after correcting the sample position. Therefore, in order to draw with high precision, it is necessary to set the moving speed of the sample low, and this has been an obstacle to the productivity of the conventional apparatus.

[Purpose of the invention]

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for correcting the irradiation position of a charged beam exposure apparatus, which solves the above-mentioned problems in the prior art and enables high-speed and highly accurate pattern drawing.

[Summary of the invention]

In order to achieve the above object, the present invention is characterized by determining in advance the amount of movement of the sample between detecting the position of the sample and actually irradiating the beam, and calculating this value before beam irradiation. The purpose is to add this to the drawing data.

[Embodiments of the invention]

An embodiment of the present invention will be described with reference to the drawings.

FIG. 1 shows an example of an electron beam exposure system, which is an example of an apparatus for carrying out the present invention. In FIG. 1, 1 is an electron optical lens barrel p, its interior K Vi (11+' direction device 2,
It is equipped with stage 6 etc. Note that 4 is an electron beam trajectory, and 5 is a sample to be exposed.

Pattern data is read out from the pattern memory 7 to the deflector 2 based on instructions from the control computer 6 to which signals are applied in the following procedure. The read pattern data is sequentially corrected for distortions caused by wafer deformation in the correction calculation circuit 8, and corrected for the sample position in the position correction circuit 9, and then the results are used to calculate the amount of displacement. The circuit 1o is added to the signal in the adder 11, and the correction calculation circuit ■12
sent to. The correction calculation circuit 12 performs correction for deflector distortion, etc., and the results are sent to the I)/A converter 16 and the amplifier 1.
4 and is applied to the deflector 2. On the other hand, for the stage control computer 6, the stage drive circuit 16- is controlled based on data such as the moving speed set in the stage control circuit 15.The position of the stage is determined by the laser length measuring device 17. The results are sequentially measured by the stage control circuit and used to control the operation of the stage 3.The results are also supplied to the other position correction circuit 9, which is used to control the operation of the stage 3, and is also used to correct the relative position.

In the case of the conventional device, there is no displacement calculation circuit 1o and adder 11, and if the processing time from the correction calculation circuit 12 to the deflector 2 is T, and the sample movement speed is V, an irradiation position error of VxT occurs. Ta. In the method of the present invention, T (constant specific to the device) and (value set in the stage control circuit 15 prior to drawing) are set in advance from the control computer 6 to the displacement calculation circuit 10, The displacement energizing circuit 10 achieves high accuracy by executing the calculation of VxT and adding it to the original data. In this method, if the actual values of UN and V deviate from the set values, a slight irradiation position error will occur, but the amount is much smaller than V can be ignored.

〔Effect of the invention〕

As explained above, the irradiation position correction method of the present invention is a method in which the amount of movement of the sample during correction calculation processing is predicted in advance and corrected in the continuous sample movement drawing method.
It can also be applied when moving samples at high speed.
It has the advantage of being able to significantly improve productivity as an exposure device without sacrificing accuracy.

Note that the present invention is not limited to the embodiments described above. For example, in a drawing control method in which the irradiation time is set for each shot to correct the proximity effect, and the correction calculation for the next irradiation is performed while the previous irradiation is being performed, the pattern memory The individual irradiation time data read out from 7 is supplied to the displacement calculation circuit 1o, and the displacement calculation circuit 10 adds those values to the original value of T and executes the above process as T. -y, then
The present invention is applicable.

[Brief explanation of drawings]

FIG. 1 is a block diagram of an apparatus for explaining one embodiment of the present invention. Explanation of symbols 1...Electron optical lens barrel 2...Deflector 6...Sf
-shi' 4...Electron beam trajectory 5...Exposed sample 6
- Control computer 7...Pattern memory 8 -Correction calculation circuit ■9...Position correction circuit 10 -Displacement calculation circuit 11...° adder 12...Correction calculation circuit ■16...
・D/A converter 14...Amplifier 15...Stage control circuit 16...Stage drive circuit 17...Laser length measuring device

Claims (1)

[Claims] In a charged beam exposure system that uses a continuous sample movement drawing method to draw patterns using a charged beam while continuously moving the sample, the amount of movement of the sample from when the sample position is detected until the beam is actually irradiated. A method for correcting an irradiation position in a charged beam exposure apparatus, characterized in that the set value is set in advance, and the set value is added to pattern data applied to a beam deflector to irradiate a sample with a beam.