JPS6011843A - Reticle protecting device - Google Patents

Reticle protecting device

Info

Publication number
JPS6011843A
JPS6011843A JP58119422A JP11942283A JPS6011843A JP S6011843 A JPS6011843 A JP S6011843A JP 58119422 A JP58119422 A JP 58119422A JP 11942283 A JP11942283 A JP 11942283A JP S6011843 A JPS6011843 A JP S6011843A
Authority
JP
Japan
Prior art keywords
wavelength
protecting film
value
reticle
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58119422A
Other languages
Japanese (ja)
Other versions
JPH035736B2 (en
Inventor
Akira Anzai
安西 暁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Nippon Kogaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, Nippon Kogaku KK filed Critical Nikon Corp
Priority to JP58119422A priority Critical patent/JPS6011843A/en
Publication of JPS6011843A publication Critical patent/JPS6011843A/en
Publication of JPH035736B2 publication Critical patent/JPH035736B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To use stably a titled device without causing a drop of intensity of illumination and unevenness of the intensity of illumination even against plural monochromatic lights by setting the thickness of a protecting film to a value of the least common multiple or a value of its integer hold of the value of a half-wavelength in a protecting film medium of each wavelength light. CONSTITUTION:A frame member 2 is provided on a reticle 1, and the pattern surface of the reticle 1 supported by this frame member 2 is protected by a protecting film 3 supported at a height (h). In that case, a film thickness of this protecting film 3 is set to the least common multiple of a value of a half-wavelength in a protecting film medium of the first wavelength light and a value of a half-wavelength in a protecting film medium of the second wavelength light, or a value almost equal to an integer fold or the least common multiple. That is to say, with respect to both wavelengths of the first wavelength lambda1 and the second wavelength lambda2 being different from said wavelength, lambda1' and lambda2' in the medium of the protecting film are shown by the expression I and an expression II when refractive indexes of the protecting film against each wavelength are denoted by n1 and n2, and when m1 and m2 are made natural numbers, the thickness (d) of the protecting film is selected so as to satisfy a condition of the expression III, by which it can be used in common for both the wavelengths.

Description

【発明の詳細な説明】 (発明の技術分野) 本発明はレチクルの保護装置、特にレチクル保護のため
のペリクル膜に関する。
DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to a reticle protection device, and more particularly to a pellicle membrane for reticle protection.

(発明の背景) 縮小投影型露光装置(以下ステフパーと呼ぶ)は原板と
してのレチクルのパターンをウェハ上に縮小投影し良質
の微細パターンが得られるため、近年半導体製造過程に
広く用いられ、V L S [の生産に奇与してきた。
(Background of the Invention) A reduction projection exposure apparatus (hereinafter referred to as a stepper) has been widely used in the semiconductor manufacturing process in recent years because it can reduce and project the pattern of a reticle as an original onto a wafer and obtain a fine pattern of high quality. It has contributed greatly to the production of S.

そして、レチクル上にゴミが付着していると、このゴミ
がウェハ」二に転写され、パターンに欠陥を生ずるため
、レチクル面にゴミがつかぬよう、極めて薄いペリクル
H’A −(: (’A 護する方法が提案されている
。すなわち、たとえば第1図の斜視図に示すごとく、レ
チクル(1)上に枠部材(2)が設げられ、この枠部材
(2)によってレチクル面上から所定の高さ11で支1
.1されたペリクル膜(3)が形成され、レチクル(1
)上のパターン面にゴミやホコリか何着するのを防いで
いる。ここでペリクル膜(3)のレチクル面からの高さ
hば、ペリクルj模(3)上にゴミやホコリが付着して
も実質的に支障がない程度の大きさに選定されている。
If dust adheres to the reticle, this dust will be transferred to the wafer and cause defects in the pattern, so an extremely thin pellicle H'A -(: (' A method has been proposed for protecting the reticle.For example, as shown in the perspective view of FIG. Support 1 at a predetermined height 11
.. A pellicle film (3) is formed and the reticle (1
) This prevents dirt and dust from accumulating on the upper pattern surface. Here, the height h of the pellicle film (3) from the reticle surface is selected to be such that there is no substantial problem even if dirt or dust adheres to the pellicle pattern (3).

この膜はステフパーの没51性能を低下させないために
は薄いことが必要であるが、ステフパーで使用される光
は単色性が優れているため、)膜厚が適当でないと膜で
の干渉作用のために■ウェハ面で得られる照度が低下す
る。
This film needs to be thin in order not to degrade the stepper's performance, but since the light used in the stepper is monochromatic, if the film is not thick enough, interference effects in the film may occur. Therefore, the illuminance obtained at the wafer surface decreases.

■露光領域内で照度ムラが発生する2等の問題を引き起
こす。■は露光時間が増えるため製造装置としてのスル
ーブツト(単位時間内でのウェハ処理能力)の低下につ
ながるため解決する必要がある。他方■は露光領域内で
適正露光量が得られる場所と得られない場所とが発生ず
るためデバイス作成上パターン線幅がコントロールでき
な(なるので重大な欠点となる。このため、あるレチク
ルに対して使用波長が異なるごとにペリクル膜の厚さを
変えればそれぞれについて最適条件を得ることができる
が、厳しい膜厚制御が要求されるペリクル膜の種類が増
やすため製造コストの上昇をまねき、また使用に際して
は波長が変わるごとにペリクル膜を交換する必要があり
煩雑さが避けられない。また露光量を増やすために異な
る複数の波長を同時に用いる場合にはある特定の波長の
光以外には、照度低下と照度ムラが避けられず、却って
悪影響を及ばず恐れがある。
(2) This causes the second problem of uneven illuminance within the exposed area. Problem (2) needs to be solved because the exposure time increases, which leads to a decrease in the throughput (wafer processing capacity within unit time) of the manufacturing equipment. On the other hand, (2) means that there are places where the appropriate exposure amount can be obtained and places where it is not within the exposure area, so the pattern line width cannot be controlled in device creation (this is a serious drawback. If the thickness of the pellicle film is changed for each different wavelength used, the optimum conditions can be obtained for each. However, this increases the number of types of pellicle film that require strict control of film thickness, which increases manufacturing costs and increases usage. In this case, it is necessary to replace the pellicle film every time the wavelength changes, which is unavoidable.Also, when using multiple different wavelengths at the same time to increase the exposure amount, the illumination Decrease in illumination and uneven illumination cannot be avoided, and there is a risk that it will not have any negative effects.

(発明の目的) 本発明の目的は、互いに異なる複数種類の単色光に対し
ても、照度低下、照度ムラを生ずることなく安定して使
用し得るレチクル保護装置を提供することにある。
(Objective of the Invention) An object of the present invention is to provide a reticle protection device that can be used stably even with a plurality of different types of monochromatic light without causing a decrease in illuminance or unevenness in illuminance.

(発明の概要) 本発明は、レチクル上に設けられる枠部祠と該枠部材に
支持されて該レチクルのパターン面を所定の高さでおお
うように設けられた保護膜とを有するレチクル保護装置
におい−ζ、該保護膜の]I+ J8rは、第1波長光
の保護膜媒質中におりる半波長の値とこれと異なる第2
波長光の保護膜媒質中τ中における半波長の値との最小
公倍数又は該最小公倍数の整数倍にほぼ等しい値である
ことを特徴とするものである。すなわち、第1波長λ1
とこれと異なる第2波長λ2との両波長に対して、ペリ
クル膜の媒質中での波長λ1゛、22″は、各波長に対
するペリクル膜の屈折率をnl、 n2とするとき、λ
1゛−λ1/nl、λ2゛−λ2/n2と表され、ml
、 m2を自然数とするとき、ペリクル膜の厚さdを d =ml ・λ1’ / 2 =m2 ・λ2゛/2
の条件を満足するように選択することによって、両波長
に刻して共通に使用することが可能となる。
(Summary of the Invention) The present invention provides a reticle protection device having a frame part provided on a reticle and a protective film supported by the frame member and provided to cover the pattern surface of the reticle at a predetermined height. Odor −ζ, ]I+ J8r of the protective film is the value of the half wavelength of the first wavelength light that falls into the protective film medium, and the value of the second wavelength light that is different from this.
It is characterized in that the wavelength of light is the least common multiple of the value of a half wavelength in τ in the protective film medium, or a value that is approximately equal to an integral multiple of the least common multiple. That is, the first wavelength λ1
and a second wavelength λ2 different from this, the wavelengths λ1'' and 22'' in the medium of the pellicle film are λ, where the refractive index of the pellicle film for each wavelength is nl and n2.
It is expressed as 1゛-λ1/nl, λ2゛-λ2/n2, and ml
, When m2 is a natural number, the thickness d of the pellicle film is d = ml ・λ1'/2 = m2 ・λ2゛/2
By selecting a wavelength that satisfies the following conditions, it becomes possible to engrave both wavelengths and use them in common.

いま、第1波i′λ1の単色光と第2波長λ2の単色光
それぞれについてのペリクル膜の膜厚dと透過率1゛と
の関係を例示すれば第2図のようになる。
FIG. 2 shows an example of the relationship between the thickness d of the pellicle film and the transmittance 1'' for the monochromatic light of the first wavelength i'λ1 and the monochromatic light of the second wavelength λ2.

図示のごとき特性においては、第1波長λ1に対して、
dla、dlb、・+、didの各膜厚において全て、 d =ml ・λ1 / (2・nl>の条件を満たし
、他方、第2波長λ2に対してはd2a、d2b、・−
、d2dの各膜厚において全て、d=m2・λ2 / 
(2・n2) の条件をl^tたしている。従って、例えば厚さdla
のペリクル膜では、第1波長λ1の光に対しては問題な
いが、第2波長λ2の光に対しては透過率がかなり低下
するのみならず、膜厚のむらや斜入射光による照度むら
が著しくなる。しかし、膜厚を、第1波長光のペリクル
IIQ媒質中での半波長値と第2波長光のペリクル膜媒
質中での半波長値との最小公倍数に等しくする場合には
、 ml ・ λ1゛/2 と m2・ λ2゛/2とが等
しくなる。すなわち、各波長に対するペリクル膜の映厚
ば、各波長に対するペリクル膜の屈折率をnl、 n2
として、 dlc=m’iλ1 / (2・nl) 。
In the characteristics shown in the figure, for the first wavelength λ1,
All film thicknesses of dla, dlb, ・+, and did satisfy the condition d = ml ・λ1 / (2・nl>, while for the second wavelength λ2, d2a, d2b, ・−
, d=m2・λ2/ for each film thickness of d2d.
The condition of (2・n2) is satisfied. Therefore, for example the thickness dla
With the pellicle film, there is no problem with the light of the first wavelength λ1, but the transmittance of the light with the second wavelength λ2 decreases considerably, as well as unevenness in the film thickness and uneven illuminance due to obliquely incident light. It becomes noticeable. However, when the film thickness is made equal to the least common multiple of the half-wavelength value of the first wavelength light in the pellicle IIQ medium and the half-wavelength value of the second wavelength light in the pellicle film medium, ml · λ1゛/2 and m2・λ2゛/2 become equal. That is, if the reflective thickness of the pellicle film for each wavelength is, then the refractive index of the pellicle film for each wavelength is nl, n2
As, dlc=m'iλ1/(2・nl).

d2c=m2・λ2 / (2冒12)と表され、これ
らの両者が実質的に等しくなる。
It is expressed as d2c=m2·λ2/(2×12), and these two are substantially equal.

従って、dlc(−d2c)の膜厚の場合には、両波長
に対して厚さが適切な状態となり、各波長について透過
率が低下することばなく、照明むらも生じにくい。
Therefore, in the case of a film thickness of dlc (-d2c), the thickness is appropriate for both wavelengths, the transmittance does not decrease for each wavelength, and uneven illumination is less likely to occur.

(実施例) 以下、具体例について説明すると、超i!’Ii圧水す
1シランプの発光スペクトルのうら、第1波長λ1とし
て436mm、第26Jj、長λ2として365 mj
nを用いる場合には、ペリクルIiA媒質中での各波長
の2分の1の値の最小公子:3数は、 mlλ1’/2=m2・λ21/2 と表される。また、この場合の各波長に対する屈折率は
ほぼ等しい値nであるとみなすことができる。従って、 ml/m2= 365/ 436 ’−5/ 6より、
ml−5、m2= 6の時に必要な光学的膜1andは
、5÷2X436=1090nm又は6÷2×365=
1095nmであり、はぼ1.09μmであるよう構成
すればよい。また、この整数倍の光学的膜厚とすること
もできる。
(Example) A specific example will be explained below. The back of the emission spectrum of the 'Ii pressurized water tank lamp, the first wavelength λ1 is 436 mm, the 26th Jj is 365 mj as the length λ2
When using n, the least common 3 number of the value of 1/2 of each wavelength in the pellicle IiA medium is expressed as mlλ1'/2=m2·λ21/2. Further, in this case, the refractive index for each wavelength can be considered to be approximately the same value n. Therefore, from ml/m2=365/436'-5/6,
When ml-5, m2=6, the required optical film 1and is 5÷2×436=1090 nm or 6÷2×365=
The wavelength may be 1095 nm, and the thickness may be approximately 1.09 μm. Further, the optical film thickness can be an integral multiple of this.

他方、第1波長λ1として405nm、第2波長λ2と
して365nmを用いる場合には、同様にして、ペリク
ル膜媒質中での各半波長値の最小公倍数から、ペリクル
膜に必要な光学的膜厚は、m1=10.又はm2=il
と与えられる。すなわち、22O25n又は2007.
5 n mであり、両者の中間値より光学的膜厚をほぼ
2.02μmとすることが望ましい。
On the other hand, when using 405 nm as the first wavelength λ1 and 365 nm as the second wavelength λ2, the optical thickness required for the pellicle film is similarly calculated from the least common multiple of each half-wavelength value in the pellicle film medium. , m1=10. or m2=il
is given. That is, 22O25n or 2007.
5 nm, and it is desirable that the optical film thickness be approximately 2.02 μm, which is the intermediate value between the two.

(発明の効果) 以上のごとく、本発明によれば、同一の保護膜を設けた
レチクルを波長が異なるステッパーに用いることが可能
となる。このようにしてペリクル膜が共通になると異な
る厚さのペリクル膜を開発する必要がなくなると共に同
一品種の生産量が増えるので生産コストが下がり安価な
ペリクル膜が得られる。又管理保管にも品種が少ないた
め有利である。さらにペリクル膜(スJきレチクルを使
用波長の異なるステッパーで共有することができ、この
ためレチクルの枚数を節約することができ、大幅なVL
SIのコスト低減につながる。尚、使用波長がλ1.λ
2と異なる複数台のステッパーを使用する場合に限らず
、本発明によるペリクル膜は同時に異なるλ1.λ2の
波長で露光を与えるステッパーが開発された時にも極め
て有効であることは明白である。また、使用波長を前述
の説明では2種類λ1.λ2としたが3種類以上の波長
λ1.λ2.λ3.・・・についても本発明は同様に成
り立ち、この場合にも、必要なペリクル膜の膜厚は、各
波長光のペリクル膜媒質中の最小公倍数又はこの整数倍
とすればよいことばいうまでもない。
(Effects of the Invention) As described above, according to the present invention, reticles provided with the same protective film can be used for steppers with different wavelengths. In this way, when the pellicle membranes are made common, there is no need to develop pellicle membranes of different thicknesses, and the production volume of the same type increases, so production costs are reduced and inexpensive pellicle membranes can be obtained. It is also advantageous for management and storage as there are fewer varieties. In addition, a reticle with a pellicle film can be shared by steppers with different wavelengths, which saves the number of reticles and significantly increases VL.
This leads to SI cost reduction. Note that the wavelength used is λ1. λ
The pellicle membrane according to the present invention is not limited to the case where a plurality of steppers different from λ1. It is clear that steppers providing exposure at wavelengths of λ2 would also be highly effective when developed. In addition, in the above explanation, there are two types of wavelengths used: λ1. λ2, but three or more wavelengths λ1. λ2. λ3. . . . The present invention similarly applies, and it goes without saying that in this case, the required thickness of the pellicle film may be the least common multiple of the light of each wavelength in the pellicle film medium or an integral multiple thereof. .

【図面の簡単な説明】[Brief explanation of drawings]

第1図はレチクル保護装置の例を示す斜視図。 第2図は本発明における膜厚と透過率との関係を示す図
である。 〔主要部分の符号の説明〕 ■・・・レチクル、2・・・枠部材 3・・・ペリクル膜 出願人 日本光学工業株式会社 代理人 渡 辺 隆 男
FIG. 1 is a perspective view showing an example of a reticle protection device. FIG. 2 is a diagram showing the relationship between film thickness and transmittance in the present invention. [Explanation of symbols of main parts] ■... Reticle, 2... Frame member 3... Pellicle membrane Applicant: Takao Watanabe, Agent, Nippon Kogaku Kogyo Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] レチクル上に設けられる枠部材と該枠部材に支持されて
該レチクルのパターン面をおおうように設けられた保護
膜とを有し、第1と第2の互いに異なる波長の光に対し
て使用され得るレチクル保護装置において、該保護膜の
膜厚は、前記第1波長光の該保護膜の媒質中における半
波長の値と前記第2波長光の該保護膜の媒質中における
半波長の値との最小公倍数又は該最小公倍数の整数倍と
するレチクル保護装置。
It has a frame member provided on the reticle and a protective film supported by the frame member and provided to cover the pattern surface of the reticle, and is used for first and second lights of different wavelengths. In the reticle protection device obtained, the thickness of the protective film is equal to the value of the half wavelength of the first wavelength light in the medium of the protective film and the value of the half wavelength of the second wavelength light in the medium of the protective film. A reticle protection device that uses the least common multiple of or an integral multiple of the least common multiple.
JP58119422A 1983-06-30 1983-06-30 Reticle protecting device Granted JPS6011843A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58119422A JPS6011843A (en) 1983-06-30 1983-06-30 Reticle protecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58119422A JPS6011843A (en) 1983-06-30 1983-06-30 Reticle protecting device

Publications (2)

Publication Number Publication Date
JPS6011843A true JPS6011843A (en) 1985-01-22
JPH035736B2 JPH035736B2 (en) 1991-01-28

Family

ID=14761061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58119422A Granted JPS6011843A (en) 1983-06-30 1983-06-30 Reticle protecting device

Country Status (1)

Country Link
JP (1) JPS6011843A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688004A (en) * 1985-09-11 1987-08-18 Kabushiki Kaisha Toshiba Frequency-changeable microwave signal generator having plural selectively operated oscillators
JPH09204038A (en) * 1996-09-24 1997-08-05 Hitachi Ltd Production of mask
US7960075B2 (en) 2006-11-13 2011-06-14 Kabushiki Kaisha Toshiba Photomask unit, exposing method and method for manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688004A (en) * 1985-09-11 1987-08-18 Kabushiki Kaisha Toshiba Frequency-changeable microwave signal generator having plural selectively operated oscillators
JPH09204038A (en) * 1996-09-24 1997-08-05 Hitachi Ltd Production of mask
US7960075B2 (en) 2006-11-13 2011-06-14 Kabushiki Kaisha Toshiba Photomask unit, exposing method and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH035736B2 (en) 1991-01-28

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